TABLE OF CONTENTS | AES | Auger electron spectroscopy | |
| AFM | Atomic force microscope/microscopy | |
| ASIC | Application-specific integrated circuit | |
| BSF | Back surface field | |
| BZ | Brillouin zone | |
| CARL | Chemically amplified resist lithography | |
| CCD | Charge-coupled device | |
| CMOS | Complementary metal oxide semiconductor | |
| CNT | Carbon nanotube | |
| CVD | Chemical vapor deposition | |
| CW | Continuous wave | |
| Cz | Czochralski | |
| DBQW | Double-barrier quantum-well | |
| DFB | Distributed feedback (QCL) | |
| DLTS | Deep level transient spectroscopy | |
| DOF | Depth of focus | |
| DRAM | Dynamic random access memory | |
| DUV | Deep ultraviolet | |
| EBIC | Electron beam induced current | |
| ECL | Emitter-coupled logic | |
| ECR | Electron cyclotron resonance (CVD, plasma etching) | |
| EDP | Ethylene diamine /pyrocatechol | |
| EEPROM | Electrically erasable programmable read-only memory | |
| EL | Electroluminescence | |
| ESR | Electron spin resonance | |
| ESTOR | Electrostatic data storage | |
| Et | Ethyl | |
| EUV | Extreme ultraviolet | |
| EUVL | Extreme ultraviolet lithography | |
| EXAFS | Extended x-ray absorption fine-structure studies | |
| FEA | Field emitter cathode array | |
| FET | Field effect transistor | |
| FIB | Focused ion beam | |
| FP | Fabry-Perot | |
| FTIR | Fourier transform infrared | |
| FWHM | Full width at half maximum | |
| HBT | Hetero bipolar transistor | |
| HEL | Hot-embossing lithography | |
| HEMT | High electron mobility transistor | |
| HIT | Heterojunction with intrinsic thin layer | |
| HOMO | Highest occupied molecular orbital | |
| HREM | High resolution electron microscope /microscopy | |
| IC | Integrated circuit | |
| ICP | Inductively coupled plasma | |
| IMPATT | Impact ionization avalanche transit time | |
| IPG | In plane gate | |
| IR | Infrared | |
| ITO | Indium tin oxide | |
| ITRS | International technology roadmap for semiconductors | |
| Laser | Light amplification... |
