Nanotechnology and Nanoelectronics: Materials, Devices, Measurement Techniques

Among the three nanostructures nanodefects, nanolayers and nanoparticle, the nanolayers have found the most widespread applications. They are mostly used for electronic or protective purposes:
MOS gate oxide
Field oxide
SOI oxide
Amorphous layers for heterojunction solar cells, TFTs, optical sensors
MOS channels
Counter-doped Si layers for p-n junctions, transistors
Recrystallized layers on dielectrics for device production
Oxide as implantation and diffusion masks
Oxide for the photolithography
Silicides or metals for connections
Epitaxial layers for transistors, laser, quantum detectors
ITO for anti-reflection and charge collection in solar cells
Back side surface field (BSF) layers in solar cells
Metal layers for glasses, lenses, beam splitters, interferometers
Anti-corrosion and passive layers
This enumeration is by no means complete, and each item can be subdivided into numerous applications. For instance, counter-doped layers produced by ion implantation are used for MOS source and drain, CMOS wells, isolation in integrated circuits, buried channel CCDs, layers for the suppression of blooming in the CCD, emitter for solar cells, etc. The number of applications in corrosion and metallization is vast as well. Epitaxial layers enable the production of high frequency, opto-electronic, and quantum layer devices.