TABLE OF CONTENTS A.M.ROSKOWSKI, [1]
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695 USA
E.A.PREBLE, P.M.MIRAGLIA, [2] R.F.DAVIS
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695 USA
J.SCHUCK, R.GROBER
Department of Applied Physics, Yale University, New Haven, CT 06520 USA
S.EINFELDT,
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695 USA
Institute of Solid State Physics, University of Bremen, 28334 Bremen, Germany
Maskless pendeo-epitaxy involves the lateral and vertical growth of cantilevered wings of material from the sidewalls of unmasked etched forms. Gallium Nitride films grown at 1020 C via metalorganic vapor phase epitaxy on GaN/AlN/6H-SiC(0001) substrates previously etched to form [1 100]-oriented stripes exhibited similar vertical [0001] and lateral [11 20] growth rates, as shown by cross-sectional scanning electron microscopy. Increasing the temperature increased the growth rate in the latter direction due to the higher thermal stability of the GaN (11 20) surface. The (11 20) surface was atomically smooth under all growth conditions with a root mean square (RMS)=0.17 nm. High resolution X-ray diffraction and atomic force microscopy of the pendeo-epitaxial films confirmed transmission electron microscopy results regarding the significant reduction in dislocation density in the wings. This result is important for the properties of both optoelectronic and microelectronic devices fabricated in III-Nitride structures. Measurement of strain indicated that the wing material is crystallographically relaxed as evidenced by the increase in the c-axis lattice parameter and the upward shift of the E2 Raman line frequency.
