TABLE OF CONTENTS SERGEY L.RUMYANTSEV, NEZIH PALA [a] , and MICHAEL. S.SHUR,
Department of Electrical, Computer, and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017, Rensselaer Polytechnic Institute, Troy NY 12180 3590, USA
MICHAEL E.LEVINSHTEIN
Solid State Electronics Division, The loffe Physical-Technical Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russia
REMIS GASKA
Sensor Electronic Technology, Inc. 1195 Atlas Road, Columbia, SC 29209, USA
M.ASIF KHAN and GRIGORY SIMIN
Department of Electrical and Computer Engineering, University of South Carolina, Columbia, SC, 29208, USA
AlGaN thin films and Schottky barrier Al 0.4Ga 0.6N diodes exhibit generation-recombination (GR) noise with activation energies of 0.8 1 eV. GR noise in AlGaN/GaN Heterostructure Field Effect transistors (HFETs) corresponds to activation energies in the range from 1 3 meV to 1 eV. No GR noise is observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN/InGaN/GaN Double Heterostructure Field Effect Transistors (DHFETs). Local levels responsible for the GR noise in HFETs and DHFETs might be located in AlGaN barrier layers.
Keywords: 1/f noise; generation recombination noise; III-nitrides.
[a]Also with Sensor Electronic Technology, Inc. 1195 Atlas Road Columbia, SC 29209, USA
GaN-based Field Effect Transistors (FETs) have potential for high temperature, high power, high frequency, and radiation hard applications.1 ,2 ,3 GaN/AlGaN FETs can operate in a wide temperature range from cryogenic temperatures up to several hundred degrees Celsius.4 When these devices are used...
