TABLE OF CONTENTS In this chapter, two types of models for polar semiconductors are applied for investigating the particle transport in indium phosphide: a two-valley model and a three-valley model. Besides the number of the considered energy bands, these models differ mainly in the material parameters used for InP, which vary especially in the energy separation between the ? and the L valleys. In the reference for the material data of the two-valley model [Vaissiere et al. (1992)], we find ? ? L = 0.61 eV, while [Maloney and Prey (1977)] tells us that ? ? L = 0.86 eV as it is used in the three-valley model. The differences in the resulting transport quantities obtained by the two models are mainly a consequence of the differences in the used input parameter.
In this section, we use the multigroup model equations (3.40) for simulating the particle transport in indium phosphide. Therefore, we consider n-type InP with a doping concentration of N D = 10 17cm -3 at the temperature T L = 300 K. Therefore, we are allowed to neglect holes in the valence band. The conduction band is approximated by the ? valley centered at (0, 0, 0) and four equivalent L valleys along ?1, 1, 1 ?. These valleys are assumed to be spherical and non-parabolic. The X valleys are neglected in our calculations. The material parameters, we use in our calculations are...
