TABLE OF CONTENTS In this chapter we present numerical results obtained with the help of our multigroup WENO solver. All of the calculations are carried out for silicon at the temperature T L = 300 K. The conduction band of silicon is modeled by six equivalent energy valleys in the Kane approximation. Since we are modeling electrons moving in the same symmetry-type of valleys, the electron distribution function f represents an average probability function among these valleys. The collision term used includes acoustic deformation potential scattering and optical intervalley scattering between equivalent valleys. Therefore, the transition rate for the scattering of electrons in silicon reads
| (9.1) |  |
| Quantity | Symbol | Unit | Value |
|---|---|---|---|
| Mass density | ? | kgm -3 | 2330 |
| Effective mass ratio | m */ m 0 | 0.32 | |
| Non-parabolicity factor | ? * | (eV) -1 | 0.5 |
| Relative dielectric constant Si | ? Si | 11.7 | |
| Relative dielectric constant SiO 2 | | 3.9 | |
| Optical phonon energy | ? ? 0 | eV | 0.063 |
| Intervalley coupling constant | D IV | 10 10 eVm -1 | 11.4 |
| Acoustic deformation potential | D A | eV | 9 |
| Sound velocity | ? s | ms -1 | 9040 |
| Lattice temperature | T L | K | 300 |
The symbols K 0( k, k') and K( k, k') are the acoustic deformation potential coupling constant and the intervalley coupling constant, respectively. According to the considerations in Sec. 2.4, they are given by
| (9.2a) |  |
| (9.2b) |  |
Further, the occupation number of the optical phonons n
