This book is aimed at presenting new deterministic solution methods for the Bloch-Boltzmann-Peierls equations governing the carrier transport in semiconductors. Therefore, we present a multigroup model to the Boltzmann transport equations for polar semiconductors. Special effort is invested in the proper formulations of the force term and the polar optical interaction terms. In addition, expressions for handling all the other relevant scattering mechanisms are deduced. We prove that this multigroup model fulfills the related conservation laws for the electron density and the total energy density. As concerns the numerical properties of our model, we find two advantages in comparison to other mesoscopic methods: the collision coefficients are found to be analytical expressions; the evaluation of the collision terms is performed in a very efficient way, even the nonlinear POP interaction term is simply given as the product of the unknowns with a constant collision coefficient. Consequently, our method combines high numerical accuracy and affordable computation time.

The developed method is used to study the transient transport regime in InP in response to a step-like dc electric field pulse. The dependence of the computation time on the applied electric field strength and the demanded relative accuracy is presented. The results for the average drift velocity as a function of the applied electric field are in good agreement with several experimental and other theoretical studies. Moreover, we discuss the phenomenon of the velocity overshot for high electric field strengths and demonstrate that the influence of hot phonons on the average drift velocity...