SiC Materials and Devices, Volume 2

SiC Materials and Devices, Volume 2

edited by Michael Shur
Rensselaer Polytechnic Institute,
USA
Sergey Rumyantsev
Rensselaer Polytechnic Institute,
USA

Ioffe Institute of the Russian Academy of Sciences,
Russia
Michael Levinshtein
Ioffe Institute of the Russian Academy of Sciences,
Russia
NEW JERSEY LONDON, SINGAPORE, BEIJING, SHANGHAI, HONG KONG, TAIPEI, CHENNAI

Published by
World Scientific Publishing Co. Pte. Ltd.
5 Toh Tuck Link, Singapore 596224
USA office: 27 Warren Street, Suite 401 402, Hackensack, NJ 07601
UK office: 57 Shelton Street, Covent Garden, London WC2H 9HE

Selected Topics in Electronics and Systems Vol. 43

British Library Cataloguing-in-Publication Data

A catalogue record for this book is available from the British Library.

Copyright 2007 by World Scientific Publishing Co. Pte. Ltd.

All rights reserved. This book, or parts thereof, may not be reproduced in any form or by any means, electronic or mechanical, including photocopying, recording or any information storage and retrieval system now known or to be invented, without written permission from the Publisher.

For photocopying of material in this volume, please pay a copying fee through the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, USA. In this case permission to photocopy is not required from the publisher.

ISBN-13

978-981-270-383-5

ISBN-10 981-270-383-7

Editor: Tjan Kwang Wei

Printed by
Mainland Press Pte Ltd

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