TABLE OF CONTENTS DIETRICH STEPHANI
SiCED Electronics Development GmbH & Co. KG, a Siemens Company
G nther-Scharowsky-Str.1, D-91052 Erlangen,
Tel. ++49 9131 731718 Fax ++49 9131 723046
Email: dietrich.stepani@siemens.comwww.siced.de
PETER FRIEDRICHS
SiCED Electronics Development GmbH & Co. KG, a Siemens Company
G nther-Scharowsky-Str.1, D-91052 Erlangen,
Tel. ++49 9131 734894 Fax ++49 9131 723046
Email: peter.friedrichs@siemens.comwww.siced.de
The chapter will give an overview about the theory of JFETs with special attention to the wide band gap issues related to SiC. After a comprehensive discussion of relevant structures and topologies experimental results are presented and discussed. Especially vertical structures are in the focus of this chapter. Characteristic I-V data will be shown as well as application specific solutions regarding the temperature behavior or the ruggedness of the devices. The status of the JFETs technology will be judged and compared to alternative solutions like MOSFEts or lateral JFETs. Finally, an outlook will be given regarding targeted applications for SiC VJFETs and the resulting requirements as targets for future improvements.
Keywords: SiC, JFETs, vertical JFETs, avalanche
A solid state electronic device, similar to a Metal Semiconductor Field-Effect Transistor (MESFET) was for the first time described by Julius Edgar Lilienfeld1 as early as in 1926 while ten years later the first Field-Effect Transistor (FET) with an insulating gate (MISFET) was described by Oskar Heil2 in 1936 - 12 years before the Transistor was announced.
The Junction (Gate) Field Effect Transistor (JFET, rarely named JUGFET) has been predicted by William Shockley3...
