TABLE OF CONTENTS The considerable progress made in the development of SiC technology in the last 10 15 years has enabled creation of SiC semiconductor devices of almost all the basic types, including the first integrated circuits.
Deep centers determine many of the most important parameters of semiconductor devices. Deep centers in the bulk of a semiconductor affect the lifetime and diffusion length of minority charge carriers, efficiency of light-emitting diodes and photodetectors, gain of transistors, and magnitude of the temperature coefficient for the breakdown voltage of p-n junctions. As it is impossible now to predict theoretically the main parameters of impurity and defect centers in the new semiconductor material, the principal source of information on deep centers is experiment.
It is evident that further advance in the technology of SiC and design of new devices will, on the one hand, require studies of deep centers in epitaxial layers and p-n junctions fabricated by various techniques. On the other hand, analysis of parameters of devices that have already been created can yield additional information about the properties of deep centers in them. In addition, most of methods used to grow epitaxial layers and fabricate p-n junctions lead to formation of various deep centers in the bulk of the semiconductor and on its surface, which, in turn, affects the characteristics of devices created from them. Thus, it is possible to determine the optimum combination of techniques for creating a given type of devices with the best set of operating characteristics by studying the...
