CMOS RFIC Design Principles

Including numerous examples that clearly illustrate and support important topics, this book provides a practical resource for comprehensive, expert guidance on designing CMOS RF integrated circuits.
These sample SPICE BSIM parameters for a 0.5- ?m double poly triple metal CMOS process are available on the CD as file: X:bsimparms.txt (where X: is your CD drive). (Courtesy of MOSIS, http://www.mosis.com. Used with permission.)
*n-channel MOSFET parametrs *SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 *Temperature_parameters=Default .MODEL CMOSN NMOS( LEVEL =49 +VERSION = 3.1 TNOM =27 TOX =1.38E-8 +XJ =1.5E-7 NCH =1.7E17 VTH0 =0.6559455 +K1 =0.86934 K2 =-0.0988243 K3 =25.6950929 +K3B =-7.7863337 W0 =1E-8 NLX =1E-9 +DVT0W =0 DVT1W =0 DVT2W =0 +DVT0 =3.4348179 DVT1 =0.3738587 DVT2 =-0.0888276 +U0 =456.5594281 ...