TABLE OF CONTENTS Todd Steiner, Air Force Office of Scientific Research
As we begin the twenty-first century, nanoscience and technology are advancing at a rapid pace and making revolutionary contributions in many fields including electronics, materials science, chemistry, biology, structures and mechanics, and optoelectronics. Although nanoscience and technology are progressing along many fronts, the most impressive progress has been made in the area of semiconductor technology. This book reviews recent progress in semiconductor nanostructure growth and materials development and also reviews progress in semiconductor devices using nanostructures, with a particular emphasis on 3D nanostructures that have emerged during the last 10 years.
Semiconductor nanostructures have been enabled by the advancements in epitaxial growth techniques, which are now capable of growing epilayers as thin as one atomic layer and with interface roughnesses that are a mere fraction of a monolayer. The development of advanced crystal and thin-film growth technologies capable of realizing high crystalline quality and purity of materials is an enabling step in bringing semiconductor devices to reality. These growth techniques are reviewed in Chapter 2. Chapter 2 starts with an overview of the bulk crystal growth techniques that are required for obtaining high-quality substrates, then looks at the primary means for producing high-quality epilayers, including liquid phase epitaxy, vapor phase epitaxy, molecular beam epitaxy, metalorganic chemical vapor deposition (MOCVD), and atomic layer epitaxy (ALE), as well as techniques for thin-film deposition including plasma-enhanced chemical vapor deposition, electron cyclotron resonance, vacuum evaporation, and sputtering. Chapter 2 then...
