[1] Van Vechten, J. A., and T. K. Bergstresser, "Electronic Structures of Semiconductor Alloys," Phys. Rev. B, Vol. 1, 1970, pp. 3351 3358.

[2] Casey, H. C., and M. B. Panish, Heterostucture Lasers, New York: Academic Press, 1978.

[3] Ilegems, M., and M. B. Panish, "Phase Equilibria in III-V Quaternary System-Application to Al-G-P-As," J. Phys. Chem. Solids, Vol. 35, 1974, pp. 409 420.

[4] Jordan, A. S., and M. Ilegems, "Solid-Liquid Equilibria for Quaternary Solid Solutions Involving Compound Semiconductors in the Regular Solution Approximation," J. Phys. Chem. Solids, Vol. 36, 1974, pp. 329 342.

[5] Adachi, S., "Band Gaps and Refractive Indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key Properties for a Variety of the 2-4- ?M Optoelectronic Device Applications," J. Appl. Phys., Vol. 61, No. 10, 1987, pp. 4869 4876.

[6] Goldschmidt, V. M., Skrifter Norshe Vide. Akads. Oslo I: Mat. Naturv. Kl. VIII, 1926.

[7] Heinz, C., and W. Schmidt, "Auf Altenstadt," J. Crystal Growth, Vol. 67, 1984, p. 393.

[8] Woelk, C., and K. W. Benz, J. Crystal Growth, Vol. 27, 1974, p. 177.

[9] Dutta, P. S., et al., J. Crystal Growth, Vol. 152, 1995, p. 14.

[10] Capasso, F., M. B. Panish, and S. Sumski, IEEE J. Quantum Electron., Vol. QE-17, 1981, p. 273.

[11] Miki, H., K. Segawa, and K. Fujibayashi, Jpn. J. Appl. Phys., Vol. 13, 1974, p. 203.

[12] Manasevit, H. M., and