Semiconductor Nanostructures for Optoelectronic Applications

Acronyms

AAO

anodized aluminum oxide

AES

Auger Electron Spectroscopy

AFM

Atomic Force Microscope

ALE

atomic layer epitaxy

CL

cathololuminescence

CMOS

complimentary metal-oxide-semiconductor

CNT

carbon nanotube

CVD

chemical vapor deposition

CZ

Czochralski crystal growth method

DFT

density functional theory

DH

double heterostructure

EL

electroluminescence

FET

field effect transistor

FTIR

Fourier transform infrared spectroscopy

FWHM

full width at half maximum

FZ

float zone crystal growth method

GSMBE

gas source molecular beam epitaxy

HRTEM

high-resolution transmission electron microscope

LCC

light-current characteristic

LD

laser diode

LO

longitudinal optical phonon

LPE

liquid phase epitaxy

LWIR

long wave infrared (8 12 microns)

MBE

molecular beam epitaxy

MCT

mercury cadmium telluride, HgCdTe

MEE

migration enhanced epitaxy

MIR

mid infrared, also MWIR (2 5 microns)

ML

monolayer

MOCVD

metal organic chemical vapor deposition

MOMBE

metal organic molecular beam epitaxy

MQD

multiple quantum dot

MQW

multiple quantum well

MWIR

medium-wave infrared (2 5 microns)

NIR

near infrared

OCL

optical confinement layer

PC

photoconductivity spectroscopy

PECVD

plasma enhanced chemical vapor deposition

PIG

punctuated island growth

PL

photoluminescence spectroscopy

PLE

photoluminescence exitation spectroscopy

QCL

quantum cascade laser

QD

quantum dot

QDIP

quantum dot infrared photodetector

QW

quantum well

QWIP

quantum well infrared photodetector

QWR

quantum wire

RHEED

reflection high-energy electron diffraction

RIE

reactive ion etching

SAQD

self-assembled quantum dots

SCH

separate confinement heterostructure

SEG

selective epitaxial growth

SEM

scanning electron microscope

SK

Stranski-Krastinov growth method

SL

superlattice

SLS

strained layer superlattice

SWNT

single-wall nanotube

TEM

transmission electron microscope

TO

transverse optical phonon

VCSEL

vertical cavity surface emitting laser

VLWIR

very long wavelength infrared (16 25 microns)

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