Announcements
The Qorvo® QPF4257 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The compact form factor and integrated matching minimizes layout area in the application.
Performance is focused on optimizing the PA for a 5V supply voltage that conserves power consumption while maintaining the highest linear output power and leading edge throughput. Integrate...
(read more)Qorvo's QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz Satcom band while providing 12.5-Watts of linear power with third-order intermodulation distortion products of 25 dBc. Furthermore, the QPA0017 can deliver output powers up to 25-Watts with 30 dB of small-signal g...
(read more)The DW3300Q is a fully integrated single chip Ultra-Wideband (UWB) low-power low-cost transceiver IC compliant to IEEE Std 802.15.4™‐2020 and IEEE Std 802.15.4z™‐2020 (BPRF mode) for automotive applications. It can be used in SS-TWR, DS-TWR, TDoA and PDoA systems to locate assets to an accuracy of 10 cm.
(read more)The Qorvo QPF4659 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The compact form factor and integrated matching minimizes layout area in the application.
Performance is focused on optimizing the PA for a 5V supply voltage that conserves power consumption while maintaining the highest linear output power and leading-edge throughput. This is done a...
(read more)This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B mo...
(read more)This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B mo...
(read more)This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B mo...
(read more)This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s silicon-like gate-drive characteristics allows the use of unipolar gate drives, compatible with Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the E1B mo...
(read more)Qorvo's QPC1030D is a single-pole, single-throw (SPST) reflective switch fabricated on Qorvo's QGaN15 0.15um GaN on SiC production process. Operating from 2 to 18 GHz, the QPC1030D typically provides up to 20W input power handling at control voltages of 0/-40 V. This switch maintains low insertion loss of 1.3 dB or less, and high isolation of 30 dB typical. The QPC1030D performance allow...
(read more)The Qorvo QPQ5601 is an high-performance, high power, Bulk Acoustic Wave (BAW) band-pass filter with extremely steep skirts, simultaneously exhibiting low loss in the Wi-Fi UNII 5-8 band and high near-in rejection in the UNII 1-3 band.
The filter module is specifically designed to enable industry leading capacity performance in Wi-Fi applications that result in higher power capabi...
(read more)The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjun...
(read more)The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjun...
(read more)The UJ4C075033L8S is a 750V, 33 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjun...
(read more)The UJ4C075023L8S is a 750V, 23 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing to Si IGBTs, Si FETs,...
(read more)Qorvo's QPM0106 is a packaged, high power amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process. The QPM0106 operates from 1.0 - 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power with 22.4 dB of large signal gain and 41 % power–added efficiency.
The QPM0106 is packaged in a 10-lead 15.24 x 15.24 mm bolt-down package, with a pure copper base...
The QPL7425 is a GaAs pHEMT single ended RF amplifier IC featuring 25 dB of flat gain and low noise. This IC is designed to support HFC and Fiber to The Home (FTTH) applications from 5 to 1218 MHz using a single supply operating from 3 V to 8 V. QPL7425 offers low noise and distortion plus high gain in a 3x3 QFN package for convenient layout and design in set top and infrastructure proje...
(read more)The QPB9850 is a highly integrated front-end module targeted for 5G TDD systems. The switch LNA module integrates an LNA with a high-power handling switch which
can be used as a failsafe path to termination when radio is in transmitting mode. LNAs can also be powered down during Tx mode via SW control pin on the module.
The QPB9850 provides 33 dB of gain at 3.6 GHz with 1.2 dB...
QPG6105 is a low power communications controller implementing Zigbee®, Thread, Matter, Bluetooth® Low Energy and Bluetooth Mesh protocols. It features the hardware based ConcurrentConnect™ technology enabling multiple protocols to operate simultaneously, delivering improved capacity and enhanced interoperability with the leading low power standards.
The QPG6105 SoC a...
(read more)Balun designed for applications that require small, low-cost and high reliable surface mount components. It offers low insertion loss combined with high RF power capability across a broad temperature range, compatible with 260°C lead-free soldering & RoHS compliant.
(read more)Transformer designed for applications that require small, low-cost and high reliable surface mount components, low insertion loss, high RF power capability across broad temperature range, compatible with 260°C lead-free soldering & RoHS compliant.
(read more)QPF5010 is a multi-die front-end module (FEM) designed for 8-12 GHz X-Band applications. The FEM integrates T/R switch, limiter, low-noise amplifier, and power amplifier. Transmit power is 10W saturated, receiver noise figure is 2.2dB.
Lead free and RoHS compliant.
Qorvo QPA4536 is a K-Band Power Amplifier with integrated power detector. The QPA4536 operates from 24.2 - 26.5 GHz and is designed using Qorvo’s power pHEMT production process. The QPA4536 typically provides 33 dBm of saturated output power, and 31.5 dBm output power at 1dB gain compression. The small signal gain is 18 dB, and Third Order Intercept is 43 dBm at 23 dBm SCL. To simp...
(read more)The Qorvo QM45500 is an integrated Mobile Wi-Fi front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The small form factor and integrated matching minimizes layout area in the application.
Performance is focused on optimizing the PA for a broad range of supply voltage (3.0 V < Vcc < 5.0 V). The multiple Wi-Fi TX modes enable optimization of output power, li...
(read more)The Qorvo® QM42500 is an integrated Mobile Wi-Fi front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The small form factor and integrated matching minimizes layout area in the application.
Performance is focused on optimizing the PA for a broad range of supply voltage (3.0V < Vcc < 5.0V). The multiple Wi-Fi and BT TX modes enable optimization of output...
(read more)Qorvo's QPA1315 is a packaged high power MMIC amplifier, Ku-K band, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1315 is targeted for 15.4 - 17.7 GHz band. It provides 35 W of saturated output power with 21 dB of large signal gain while achieving 20% power-added efficiency.
The QPA1315 is packaged in a 10-lead 15 x 15 mm bolt-down with a Cu base for supe...
10S-20S Intelligent BMS with Integrated MCU and Cell Balancing
The Qorvo® PAC25140 is a Smart Battery Monitoring System (BMS) that can monitor 10-series to 20-series Li-Ion, Li-Polymer and LiFePO4 battery packs. The PAC25140 integrates a FLASH-programmable MCU, Power Management, Current/Voltage/Temp
An excellent alternative to traveling wave tube amplifiers, Qorvo’s Spatium™ QPB0206N is a solid state, spatial combining amplifier with an operating range of 2–6 GHz. With its maximum performance in output power, gain, power added efficiency, and frequency range, this Spatium is the ideal building block for microwave subsystems with wide-ranging applications.
Qo...
(read more)The Qorvo® QPQ5600 is an high-performance, high power, Bulk Acoustic Wave (BAW) band-pass filter with extremely steep skirts, simultaneously exhibiting low loss in the Wi-Fi UNII 5 band and high near-in rejection in the UNII 1-3 band.
The filter module is specifically designed to enable industry leading capacity performance in Wi-Fi applications that result in higher power capab...
The Qorvo® QPF4559 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The compact form factor and integrated matching minimizes layout area in the application.
Performance is focused on optimizing the PA for a 5 V supply voltage that conserves power consumption while maintaining the highest linear output power and leading edge throughput. This is...
(read more)The Qorvo® QPF4259 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The compact form factor and integrated matching minimizes layout area in the application.
Performance is focused on optimizing the PA for a 5V supply voltage that conserves power consumption while maintaining the highest linear output power and leading-edge throughput. Integrate...
(read more)The QPQ1041Q is a high-performance, high power Bulk Acoustic Wave (BAW) TX filter designed to meet the strict LTE/NR rejection requirements for use in B41 wide and n41. The QPQ1041Q is specifically designed to meet the high-performance expectations of insertion loss and rejection for LTE/NR transmit systems under all operating conditions in NAD (Network Attached Device) applications.
(read more)The QPQ1040Q is a high-performance, high power Bulk Acoustic Wave (BAW) TX filter designed to meet the strict LTE/NR rejection requirements for use in B40/n40. The QPQ1040Q is specifically designed to meet the high-performance expectations of insertion loss and rejection for LTE/NR transmit systems under all operating conditions in NAD (Network Attached Device) applications.
(read more)Qorvo’s QPA2225 is a wide band driver amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 28 – 38 GHz, the QPA2225 provides > 0.4 W of saturated output power with >22 dB of small-signal gain.
The QPA2225 dimensions are 4 x 3 x 2 mm. It can support a variety of operating conditions to best support system require...
The QPA8840 is a an ultra-linear, 22 dB Gain, GaAs amplifier, intended for mid or output stage amplification in CATV infrastructure applications. The QPA8840 operates off a 12 Volt, 425 mA supply. The device features a pushpull cascode design which provides flat gain along with ultra-low distortion from 50 MHz to 1.8 GHz.
(read more)The QPA0004 is a reconfigurable dual-band MMIC power amplifier operating in both S-Band and X-Band.
In S-Band, it provides 9W saturated power over the 3.1 to 3.5GHz frequency range. In X-Band, it provides 8W saturated power from 9 to 11GHz.
The QPA0004 is 100% DC and RF tested to ensure compliance to electrical specifications.
Lead free and RoHS compliant.
The ACT88760 PMIC is an integrated ActiveCiPSTM power management integrated circuit. It powers a wide range of processors , including Solid-state drive Applications, Video and AI processors, FPGA's and computer vision. The ACT88760 is optimized for mid power applications like enterprise SSDs, video cameras, AR/VR devices, connected home devices, FPGAs, LPDDR5 applications etc....
(read more)Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2040D typically provides 26 dBm of output power at P1dB with gain of 13 dB and 55...
(read more)Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58...
(read more)Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The QPD2018D typically provides 22 dBm of output power at P1dB with gain of 14 dB a...
The QPC8014Q is a low loss, high isolation SP6T switch with performance optimized for LTE and diversity applications. The QPC8014Q is packaged in an ultra compact 1.1 mm x 1.9 mm x 0.44 mm, 13-pin, Module package which allows for the smallest solution size with no need for external DC blocking capacitors (when no external DC is applied to the device ports).
The QPC8018Q is a low l...
(read more)Qorvo's QPA2040D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 20 and 40 GHz, it achieves saturated output power of 2 W with power-added efficiency of 13%.
To simplify system integration, the QPA2040D is fully matched to 50 ohms with integrated DC blocking caps on both RF I/O ports. The RF input is DC blocked, and the RF out...
The QPB9362 is a highly integrated front-end module targeted for 5G TDD systems. The switch LNA module integrates an LNA with a high-power handling switch which can be used as a failsafe path to termination when radio is in transmitting mode. LNA Power down mode is available via T/R control pin on the module. The QPB9362 provides 34.5 dB of gain with 1.1 dB typical noise figure over the...
(read more)The QPC8013Q is a low loss, high isolation SP4T switch with performance optimized for LTE and diversity applications. The QPC8013Q is packaged in an ultra compact 1.1 mm x 1.9 mm x 0.44 mm, 13-pin, Module package which allows for the smallest solution size with no need for external DC blocking capacitors (when no external DC is applied to the device ports).
(read more)The Qorvo® QPF4632 is an integrated front end module (FEM) designed for Wi-Fi 6 & 6E (802.11ax) systems. The small form factor and integrated matching minimizes layout area in the application.
Performance is focused on optimizing the PA for a 3.3 V supply voltage that conserves power consumption while maintaining the highest linear output power and leading edge throughput....
(read more)The QPL1820 is an ultra-linear, GaAs pHEMT, differential RF amplifier. The device features a cascode design which provides 22 dB of flat gain along with very low distortion from 5 MHz to 1.8 GHz. This ultra-linear IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as Fiber to The Home (FTTH), Home Gateways, and Cab...
(read more)The QPA3245 is for use in 1.218 GHz CATV nodes and amplifiers.
(read more)The QPA3270 is an 18 W, High output Hybrid Power Doubler amplifier module. The part employs GaAs/GaN die and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss performance and optimal reliability.
(read more)The QPC8020Q is a low loss, high isolation SP4T switch with performance optimized for GSM, CDMA, WCDMA, & LTE applications requiring high linearity and high power handling. The QPC8020Q is packaged in a compact 1.1 mm x 1.1 mm, 9-pin module which allows for a small solution size with no need for external DC blocking capacitors (when no external DC is applied to the device ports).
(read more)Qorvo’s QPA1009 is a laminate packaged wide band power amplifier MMIC fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009 provides greater than 16 Watts (42 dBm) of saturated output power and 16 dB of large-signal gain while achieving 33% power-added efficiency.
The QPA1009 RF ports have DC blocking capacitors...
Qorvo's QPA4446D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4446D achieves 2 W linear power with 25 dBc third order intermodulation distortion products, and 18 dB small signal gain. It provides 4 W of saturated output power while achieving 25% power-added efficiency.
...
Qorvo's QPA4346D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4346D achieves 3 W linear power with 25 dBc third order intermodulation distortion products, and 16 dB small signal gain. It provides 6 W of saturated output power while achieving 20% power-added efficiency.
...
Qorvo's QPA4246D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4246D achieves 5 W linear power with 25 dBc third order intermodulation distortion products, and 16 dB small signal gain. It provides 10 W of saturated output power while achieving 17% power-added efficiency.
...
The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package. The QPL3050 is ideally suited for EW and communications systems where small size and low power consumption are needed. The broadband device delivers 18 dB of gain and 20 dBm saturated output power from a single 5 V supply.
The QPL3050 is a 50 ohm matched design eliminating the...
The Qorvo® QPQ5500 is an high-performance, high power, Bulk Acoustic Wave (BAW) band-pass filter with extremely steep skirts, simultaneously exhibiting low loss in the Wi-Fi UNII 1-3 band and high near-in rejection in the UNII5-8 band.
The filter module is specifically designed to enable industry leading capacity performance in Wi-Fi applications that result in higher power ca...
(read more)Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2160D typically provides 32.5 dBm of output power at P1dB with gain of 10.4 dB a...
(read more)Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2120D typically provides 31 dBm of output power at P1dB with gain of 11 dB and 5...
(read more)The QPL3050 is a broadband MMIC driver amplifier housed in a leadless 3x3 mm plastic surface mount package. The QPL3050 is ideally suited for EW and communications systems where small size and low power consumption are needed. The broadband device delivers 18 dB of gain and 20 dBm saturated output power from a single 5 V supply.
The QPL3050 is a 50 ohm matched design eliminating the...
The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for...
Qorvo's QPA0812 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5 - 10.5 GHz, the QPA0812 provides 1 W of saturated output power and 24 dB of large-signal gain while achieving 48% power-added efficiency.
Packaged in a small 4 x 3 mm plastic overmold QFN, tight lattice spacing requirements for ph...
(read more)Qorvo’s QPA0001 is a packaged driver amplifier fabricated on Qorvo’s 0.15 um QGaN15 on SiC process. Operating from 8.5 to 10.5 GHz, the QPA0001 can deliver 2 W saturated output power, 50 % power-added efficiency and 27 dB of large signal gain.
QPA0001 incorporates active bias control to provide customers with bias point stability while reducing system complexity.
T...
The QPL7420 is a GaAs pHEMT single ended RF amplifier IC featuring 20 dB of flat gain and low noise. This IC is designed to support HFC and Fiber to The Home (FTTH) applications from 5 to 1800 MHz using a single supply operating from 3 V to 8 V. QPL7420 offers low noise and distortion plus high gain in a 3x3 QFN package for convenient layout and design in set top and infrastructure proje...
(read more)An excellent alternative to traveling wave tube amplifiers, Qorvo’s Spatium™ QPB0618N is a solid state, spatial combining amplifier with an operating range of 6–18 GHz. With its maximum performance in output power, gain, power added efficiency, and frequency range, this Spatium is the ideal building block for microwave subsystems with wide-ranging applications.
Q...
(read more)The Qorvo QPC2110 is a packaged SOI 6-bit phase shifter. It operates over 8 – 11.5 GHz while providing 360° of phase coverage with a LSB of 5.625. The QPC2110 offers an exceptional RMS phase error of <3 degrees and amplitude error of <0.4 dB over most of the operational band. With other equally impressive small signal and linearity characteristics, the QPC2110 delivers su...
(read more)The Qorvo® PAC22140 is a Smart Battery Monitoring System (BMS) that can monitor 10-series to 20-series Li-Ion, Li-Polymer and LiFePO4 battery packs. The PAC22140 integrates a FLASH-programmable MCU, Power Management, Current/Voltage/Temp
Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2080D typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB an...
(read more)Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2060D typically provides 28 dBm of output power at P1dB with gain of 12 dB and 55...
(read more)The QPA9909 is a high-efficiency, linearizable power amplifier targeting 758 MHz – 798 MHz small-cell wireless infrastructure systems.
(read more)The QPB9378 is a highly integrated RF front-end module targeted for 5G TDD base stations. The module integrates a two-stage LNA and a high-power SPDT switch in a dual channel configuration. It features a 2nd stage LNA with bypass functionality and power down mode for LNA when in transmit mode.
(read more)QPC4043 is a fully monolithic voltage-controlled attenuator (VCA) that provides over 25 dB of gain control range over a frequency range of 5 MHz to 3000 MHz. The QPC4043 employs a closed loop design that provides a more controlled attenuation response over frequency and temperature conditions.
(read more)The QPA0506 can support a range of bias voltages to optimize power and PAE to system requirements. The QPA0506 is matched to 50 ohms with a DC blocked input and a DC grounded output.
(read more)The Qorvo QPM6000 is an integrated limiter/LNA providing robust, high RF performance covering 8-14GHz frequency range. The QPM6000 provides 23 dB small signal gain with 18 dBm P1dB power and a low noise figure of 1.6 dB across application frequency band. In addition, the integrated limiter provides a robustness level of up to 20 W of incident power for CW and 40 W for pulse application w...
(read more)The QPL1821 is an ultra-linear, GaAs pHEMT, differential RF amplifier. The device features a cascode design which provides 19 dB of flat gain along with very low distortion from 50 MHz to 1.8 GHz. This ultra-linear IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as Fiber to The Home (FTTH), Home Gateways, and Ca...
(read more)The Qorvo QPD1011 is a 7W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in a 5 x 6 mm leadless SMT package that saves real est...
(read more)The Qorvo QPD1004 is a 25W (P3dB), 50 Ohm input matched discrete GaN on SiC HEMT which operates from 30 to 1200 MHz on a 50 V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 6 x 5 mm sur...
The QPQ3501 is an exceptionally high performance BAW Filter for sub-Band n78. This filter is housed in a compact 2.0 x 1.6 mm package for base station applications. Low insertion loss, coupled with high attenuation makes this filter an ideal choice for TDD Macro Cells and Small Cells.
The QPQ3501 is part of Qorvo’s extensive portfolio of RF BAW and...