Bipolar RF Transistors Specifications

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General Specifications


	Polarity
	Your choices are...
	Other		Other unlisted polarity type.
	NPN		A physical BJT transistor arrangement where the emitter and the collector are made of N-type material and the base of P-type.
	PNP		A physical BJT transistor arrangement where the emitter and the collector are made of P-type material and the base of N-type.
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	Transistor Grade / Operating Range		The field in which the transistor will operate.
	Your choices are...
	Commercial		Devices support a temperature range and feature mechanical and electrical specifications that are suitable for commercial applications.
	Industrial		Devices support a temperature range and feature mechanical and electrical specifications that are suitable for industrial applications.
	Military		Devices support a temperature range and feature mechanical and electrical specifications that are suitable for military applications.
	Automotive		Devices support a temperature range and feature mechanical and electrical specifications that are suitable for automotive applications.
	Other		Other unlisted screening levels.
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Performance


	I_C(max)		Maximum collector current - JIS C7032 (1993), IEC61360-AAE405 (IC_DC).
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	V_CEO		Collector-to-emitter breakdown voltage (V_CEO) is the maximum allowable value of voltage able to apply continuously in the reverse direction of collector junction with the emitter open. JIS C7032 (1993), IEC61360-AAE417.
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	V_CBO		Collector-to-base breakdown voltage when the emitter terminal is open.
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	f_T		Current gain bandwidth product is the frequency at which h_FEis in unity.
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	Power Gain		The measure of the power amplification produced by the transistor. It is generally measured in dB (of the ratio of the output power to the input power).
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	Noise Figure		The noise figure (NF) is the ratio (in dB) of the signal-to-noise ratio at the input of the component and the signal-to-noise ratio measured at the output. It is a measure of the amount of noise added to the signal during normal operation. A low noise figure means better performance.
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	P_D		The power dissipation is the total power consumption of the device. It is generally expressed in watts or milliwatt. When a transistor conducts current between collector and emitter, it also drops voltage between those two points. At any given time, the power dissipated by a transistor is equal to the product of collector current and collector-emitter voltage. Just like resistors, transistors are rated in terms of how many watts they can safely dissipate without sustaining damage. High temperature is the mortal enemy of all semiconductor devices, and bipolar transistors tend to be more susceptible to thermal damage than most. Power ratings are always given in reference to the temperature of ambient (surrounding) air. When transistors are to be used in hotter-than-normal environments, their power ratings must be derated to avoid a shortened service life.
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	Operating Frequency		The frequency range through which the transistor will meet all expected specifications.
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	Output Power		The amount of output power (generally measured in watts) produced by the transistor.
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	h_fe		Common-emitter current gain or static forward current transfer ratio (h_fe ) is defined as the ratio of the input DC current and the output DC current of the transistor (static current gain). This parameter is also known as β. The ratio of collector current to base current, ß, is the fundamental parameter characterizing the amplifying ability of a bipolar transistor. ß is usually assumed to be a constant figure in circuit calculations, but unfortunately this is far from true in practice. As such, manufacturers provide a set of ß (or "h_fe") figures for a given transistor over a wide range of operating conditions, usually in the form of maximum/minimum/typical ratings. It may surprise you to see just how widely ß can be expected to vary within normal operating limits. One popular small-signal transistor, the 2N3903, is advertised as having a ß ranging from 15 to 150 depending on the amount of collector current. Generally, ß is highest for medium collector currents, decreasing for very low and very high collector currents.
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	T_J		This is the full-required range of ambient operating temperature of the junction.
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Packaging Characteristics


	Package Type
	Your choices are...
	TO-3		TO-3 is a transistor outline (TO) package.
	TO-8		TO-8 is a transistor outline (TO) package.
	TO-39		TO-39 is a transistor outline (TO) package.
	TO-92		TO-92 is a single in-line, transistor outline (TO) package that is often used for low power devices. One of the oldest power packages, TO-92 is suitable for applications in office and communication equipment.
	TO-202		TO-202 is a transistor outline (TO) package.
	TO-220		TO-220 is a transistor outline (TO) package that is suitable for high-power, medium-current, and fast-switching power devices. TO-220 is used in home appliances, office and industrial equipment, and personal and consumer electronics. A package variant, TO-220 Full Pack, includes a fully encapsulated heat sink that does not require extra hardware for electrical isolation. TO-220 Full Pack has the same footprint as TO-220, provides electrical isolation up to 5 KV, and is often used in motor drive applications and power supplies.
	TO-223		TO-223 is a transistor outline (TO) package.
	TO-237		TO-237 is a transistor outline (TO) package.
	TO-247		TO-247 is a large, throughhole, transistor outline (TO) package. TO-247 provides excellent power dissipation and is ideal for metal oxide semiconductor field effect transistors (MOSFETs), high power bipolar transistors, and insulated gate bipolar transistors (IGBTs).
	TO-263		TO-263 is the surface-mount version of the TO-220 package. TO-263 is a transistor outline (TO) package with 2, 3, 5, 6, or 7 leads. TO-263 can accommodate large dice because of its large pad design. It is suitable for high-power applications due to its low resistance. Typical applications for TO-263 include home appliances and personal computers.
	SO-8		SO-8 is a small outline (SO) package.
	SOT3		SOT3 is a small outline transistor (SOT) package with three leads.
	SOT23		SOT23 is a rectangular, surface-mounted, small outline transistor (SOT) package with three or more gull wing leads. SOT23 features a very small footprint and is optimized for the highest possible current. Because of its low cost and low profile, SOT23 is used in home appliances, office and industrial equipment, personal computers, printers, and communication equipment.
	SOT25		SOT25 is a surface-mounted, small outline transistor (SOT) package with three leads.
	SOT26		SOT26 is a plastic, surface-mounted, small outline transistor (SOT) package with three leads.
	SOT82		SOT82 is a rectangular, surface-mounted, small outline transistor (SOT) package with three leads. SOT82 is larger than DPAK and smaller than TO-220, but still comparable to TO-220 in performance. SOT82 lead frames are available in full nickel or selective silver plating and allow wire bonding with gold or aluminum wire. Often, SOT82 is used in over-voltage protection devices in telecommunications equipment. SOT82 is also used to package high-power rectifiers, DC to AC converters (DACs) and frequency converters.
	SOT89		SOT89 is a plastic, surface-mounted, small outline transistor (SOT) package with three leads and a collector pad for good heat transfer. Unlike other packages, SOT89 lead posts are up-set and not down-set. SOT89 is designed for medium power and high-speed switching applications. It is also used in applications that feature very low RDS (on), no secondary breakdown, and direct interface to complementary metal oxide semiconductor (CMOS) and transistor-transistor logic (TTL).
	SOT123		SOT123 is a flanged, ceramic, surface-mounted, small outline transistor (SOT) package with two mounting holes and four leads.
	SOT143		SOT143 is a plastic, surface-mounted, small outline transistor (SOT) package with four leads.
	SOT223		SOT223 is a plastic, surface-mounted, small outline transistor (SOT) package with four leads and a heat sink. During soldering, the formed leads absorb thermal stress and eliminate the possibility of damage to the die. The encapsulation material enhances device reliability, allowing SOT223 to provide excellent performance in environments with high temperatures and humidity levels. SOT223 provides power dissipation of 1-1.5 W.
	SOT323		SOT323 is a plastic, surface-mounted, small outline transistor (SOT) package with three leads.
	TO-251 / TO-252		TO-251 and TO-252 are low-to-medium-power packages that feature a transistor outline (TO). TO-251 uses throughhole technology (THT). TO-252 uses surface-mount technology (SMT). Both packages provide several lead frame choices and are commonly used in home appliances, personal computers, lighting, and automotive systems.
	FPAK		Flat package (FPAK).
	Other		Other unlisted or proprietary packages.
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	Packing Method
	Your choices are...
	Tape Reel		Components are packed in tape reel assemblies that include a carrier tape with embossed cavities for storing individual components. A cover tape seals the carrier tape in place. This composite tape is then wound on a reel that is placed in a corrugated shipping box for transport and delivery. Customers unpack the reels and load them into industry-standard, pick-and-place board assembly equipment. Tape and reel assemblies provide component isolation and are designed for surface-mount packages such as quad flat package (QFP) and thin quad flat package (TQFP).
	Rail		This is a method of packaging IC chips for production environments.
	Bulk Pack		Components are distributed as individual parts.
	Shipping Tube / Stick Magazine		Components are packed in shipping tubes or stick magazines that are made of rigid polyvinylchloride (PVC) and extruded in industry-standard sizes. These containers protect components during shipping and provide proper component location and orientation for use with industry-standard, pick-and-place board assembly equipment. To facilitate shipping and handling, shipping tubes and stick magazines are usually loaded into intermediate containers such as boxes or bags to form standard quantities. Intermediate-level packing quantities for shipping tubes and stick magazines often vary by pin count and package type.
	Tray		Components are packed in trays that are made of carbon powder or fiber materials and molded into rectangular outlines that contain matrices of uniformly spaced pockets. These containers protect components during shipping and provide proper component location and orientation for use with industry-standard, pick-and-place board assembly equipment. Trays are designed for components for that have leads on four sides and that require component lead isolation during shipping, handling, or processing. For example, quad flat package (QFP) and thin quad flat package (TQFP) components are often shipped in trays. To facilitate shipping and handling, trays are stacked and bound together in standard configurations. To provide rigidity, an empty cover tray is added to the top of the load. Typical stacking configurations consist of five full trays and one cover tray, and ten full trays and one cover tray. Customer requirements determine whether trays are shipped in single or multiple stacks.
	Other		Other unlisted, specialized or proprietary packing methods.
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	Number of Transistors in the Chip		The number of independent units in the chip (package).
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Bipolar RF Transistors Specifications

Polarity:

Transistor Grade / Operating Range:

IC(max):

VCEO:

VCBO:

fT:

Power Gain:

Noise Figure:

PD:

Operating Frequency:

Output Power:

hfe:

TJ:

Package Type:

Packing Method:

Number of Transistors in the Chip:

Help with Bipolar RF Transistors specifications:

I_C(max):

V_CEO:

V_CBO:

f_T:

P_D:

h_fe:

T_J: