Shipping Tube / Stick Magazine Bipolar RF Transistors

Power Bipolar Transistor, 15A, 60V, PNP [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220AB

• Polarity: PNP

Manufacturer: STMicroelectronics. Win Source Part Number: 079612-BD910. Category: Discrete Semiconductor Products. Family: Transistors (BJT) - Single. Packaging: Tube. Mounting Style: Through Hole. Package: TO-220-3. Manufacturer Device Package: TO-220. Standard Package: 50. Power - Max: 90W. [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; SOT3

• Polarity: PNP
• I_C(max): 15000

Power Bipolar Transistor, 0.1A, 300V, NPN, TO-126, 3 Pin [See More]

• Packing Method: Tube; Tube
• Package Type: TO-126

• Polarity: NPN

Manufacturer: STMicroelectronics. Win Source Part Number: 091777-D45H11. Category: Discrete Semiconductor Products. Family: Transistors (BJT) - Single. Packaging: Tube. Mounting Style: Through Hole. Package: TO-220-3. Manufacturer Device Package: TO-220AB. Standard Package: 50. Catalog: PNP... [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; SOT3

• Polarity: NPN; PNP
• I_C(max): 10000

Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247 [See More]

• Packing Method: Tube; Tube

• Package Type: PG-TO247-3

Manufacturer: STMicroelectronics. Win Source Part Number: 093904-BD438. Category: Discrete Semiconductor Products. Family: Transistors (BJT) - Single. Packaging: Tube. Mounting Style: Through Hole. Package: TO-225AA TO-126-3. Manufacturer Device Package: SOT-32. Standard Package: 50. Catalog: PNP... [See More]

• Packing Method: Tube; Tube
• Package Type: SOT3

• Polarity: PNP
• I_C(max): 4000

6.0 A, 100 V PNP Bipolar Power Transistor [See More]

• Packing Method: Tube; Tube

• Polarity: PNP

Manufacturer: Infineon Technologies. Win Source Part Number: 1188215-IRG4BC10SD-S. Packaging: Tube. Mounting Style: SMD. Reverse Recovery Time (trr): 28ns. Current - Collector Pulsed (Icm): 18A. Switching Energy: 310 μJ (on), 3.28mJ (off). Input Type: Standard. Gate Charge: 15nC. Test... [See More]

• Packing Method: Tube; Tube
• Output Power: 38

• Package Type: TO-263; SOT3
• T_J: -55 to 150

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]

• Packing Method: Tube; Tube
• Package Type: SOT186A

• Polarity: NPN

Manufacturer: Infineon Technologies. Win Source Part Number: 1188214-IRG4BC10SDPBF. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 28ns. Current - Collector Pulsed (Icm): 18A. Switching Energy: 310 μJ (on), 3.28mJ (off). Input Type: Standard. Gate Charge: 15nC. Test... [See More]

• Packing Method: Tube; Tube
• Output Power: 38

• Package Type: TO-220; SOT3
• T_J: -55 to 150

10 Amp, 450 V NPN Power Bipolar Transistor [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220-3 FullPak

• Polarity: NPN

Manufacturer: Infineon Technologies. Win Source Part Number: 1188218-IRG4BC15UD. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 28ns. Current - Collector Pulsed (Icm): 42A. Switching Energy: 240 μJ (on), 260 μJ (off). Input Type: Standard. Gate Charge: 23nC. [See More]

• Packing Method: Tube; Tube
• Output Power: 49

• Package Type: TO-220; SOT3
• T_J: -55 to 150

CA3081 - Small Signal Bipolar Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: CDIP16

Manufacturer: Infineon Technologies. Win Source Part Number: 1188220-IRG4BC20FD. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 37ns. Current - Collector Pulsed (Icm): 64A. Switching Energy: 250 μJ (on), 640 μJ (off). Input Type: Standard. Gate Charge: 27nC. [See More]

• Packing Method: Tube; Tube
• Output Power: 60

• Package Type: TO-220; SOT3
• T_J: -55 to 150

CA3082 - Small Signal Bipolar Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: PDIP14

Manufacturer: Infineon Technologies. Win Source Part Number: 1188221-IRG4BC20K. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 32A. Switching Energy: 150 μJ (on), 250 μJ (off). Input Type: Standard. Gate Charge: 34nC. Test Condition: 480V, 9A, 50Ohm, 15V. [See More]

• Packing Method: Tube; Tube
• Output Power: 60

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]

• Packing Method: Tube; Tube
• Package Type: TO-220; TO-220

• Polarity: PNP

Manufacturer: Infineon Technologies. Win Source Part Number: 1188222-IRG4BC20KD. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 37ns. Current - Collector Pulsed (Icm): 32A. Switching Energy: 340 μJ (on), 300 μJ (off). Input Type: Standard. Gate Charge: 34nC. [See More]

• Packing Method: Tube; Tube
• Output Power: 60

• Package Type: TO-220; SOT3
• T_J: -55 to 150

FGA3060ADF - Insulated Gate Bipolar Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: TO-3; TO-3PN-3

Manufacturer: Infineon Technologies. Win Source Part Number: 1188225-IRG4BC20MD-SPBF. Packaging: Tube. Mounting Style: SMD. Reverse Recovery Time (trr): 37ns. Current - Collector Pulsed (Icm): 36A. Switching Energy: 410 μJ (on), 2.03mJ (off). Input Type: Standard. Gate Charge: 39nC. Test... [See More]

• Packing Method: Tube; Tube
• Output Power: 60

• Package Type: TO-263; SOT3
• T_J: -55 to 150

Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247 [See More]

• Packing Method: Tube; Tube

• Package Type: PG-TO247-4

Manufacturer: Infineon Technologies. Win Source Part Number: 1188231-IRG4BC20UD-S. Packaging: Tube. Mounting Style: SMD. Reverse Recovery Time (trr): 37ns. Current - Collector Pulsed (Icm): 52A. Switching Energy: 160 μJ (on), 130 μJ (off). Input Type: Standard. Gate Charge: 27nC. Test... [See More]

• Packing Method: Tube; Tube
• Output Power: 60

• Package Type: TO-263; SOT3
• T_J: -55 to 150

Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247 [See More]

• Packing Method: Tube; Tube

• Package Type: TO-247; TO-247-4

Manufacturer: Infineon Technologies. Win Source Part Number: 1188232-IRG4BC20WPBF. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 52A. Switching Energy: 60 μJ (on), 80 μJ (off). Input Type: Standard. Gate Charge: 26nC. Test Condition: 480V, 6.5A, 50Ohm,... [See More]

• Packing Method: Tube; Tube
• Output Power: 60

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Insulated Gate Bipolar Transistor, 31A, 600V, N-Channel [See More]

• Packing Method: Tube; Tube

• Package Type: SMSIP3H

Manufacturer: Infineon Technologies. Win Source Part Number: 1188237-IRG4BC30K. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 58A. Switching Energy: 360 μJ (on), 510 μJ (off). Input Type: Standard. Gate Charge: 67nC. Test Condition: 480V, 16A, 23Ohm, 15V. [See More]

• Packing Method: Tube; Tube
• Output Power: 100

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Power Bipolar Transistor, 42V V(BR)CEO, 3-Element, NPN, Silicon, TO-5, Metal, 3 Pin [See More]

• Packing Method: Tube; Tube
• Package Type: TO-CAN-3

• Polarity: NPN

Manufacturer: Infineon Technologies. Win Source Part Number: 1188240-IRG4BC30S. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 68A. Switching Energy: 260 μJ (on), 3.45mJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 18A, 23Ohm, 15V. [See More]

• Packing Method: Tube; Tube
• Output Power: 100

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Half Bridge Based MOSFET Driver, BIPolar, PDIP16 [See More]

• Packing Method: Tube; Tube

• Package Type: PDIP16

Manufacturer: Infineon Technologies. Win Source Part Number: 1188241-IRG4BC30S-S. Packaging: Tube. Mounting Style: SMD. Current - Collector Pulsed (Icm): 68A. Switching Energy: 260 μJ (on), 3.45mJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 18A, 23Ohm, 15V. Categories:... [See More]

• Packing Method: Tube; Tube
• Output Power: 100

• Package Type: TO-263; SOT3
• T_J: -55 to 150

Power Bipolar Transistor, 0.5A, 50V, 7-Element, NPN, Plastic/Epoxy, 16 Pin [See More]

• Packing Method: Tube; Tube
• Package Type: SOIC16

• Polarity: NPN

Manufacturer: Infineon Technologies. Win Source Part Number: 1188242-IRG4BC30U. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 92A. Switching Energy: 160 μJ (on), 200 μJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 12A, 23Ohm, 15V. [See More]

• Packing Method: Tube; Tube
• Output Power: 100

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Buffer/Inverter Based MOSFET Driver, 1.5A, BIPolar, PDSO8 [See More]

• Packing Method: Tube; Tube

• Package Type: SOP8

Manufacturer: Infineon Technologies. Win Source Part Number: 1188244-IRG4BC30U-S. Packaging: Tube. Mounting Style: SMD. Current - Collector Pulsed (Icm): 92A. Switching Energy: 160 μJ (on), 200 μJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 12A, 23Ohm, 15V. [See More]

• Packing Method: Tube; Tube
• Output Power: 100

• Package Type: TO-263; SOT3
• T_J: -55 to 150

Buffer/Inverter Based MOSFET Driver, 1.5A, BIPolar, PDIP8 [See More]

• Packing Method: Tube; Tube

• Package Type: DIP8

Manufacturer: Infineon Technologies. Win Source Part Number: 1188245-IRG4BC30W. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 92A. Switching Energy: 130 μJ (on), 130 μJ (off). Input Type: Standard. Gate Charge: 51nC. Test Condition: 480V, 12A, 23Ohm, 15V. [See More]

• Packing Method: Tube; Tube
• Output Power: 100

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon [See More]

• Packing Method: Tube; Tube
• Package Type: SC-70-6

• Polarity: PNP

Manufacturer: Infineon Technologies. Win Source Part Number: 1188248-IRG4BC40K. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 84A. Switching Energy: 620 μJ (on), 330 μJ (off). Input Type: Standard. Gate Charge: 120nC. Test Condition: 480V, 25A, 10Ohm,... [See More]

• Packing Method: Tube; Tube
• Output Power: 160

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Insulated Gate Bipolar Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: AHPM15-CEC

Manufacturer: Infineon Technologies. Win Source Part Number: 1188249-IRG4BC40U. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 160A. Switching Energy: 320 μJ (on), 350 μJ (off). Input Type: Standard. Gate Charge: 100nC. Test Condition: 480V, 25A, 10Ohm,... [See More]

• Packing Method: Tube; Tube
• Output Power: 160

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Insulated Gate Bipolar Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220FP

Manufacturer: Infineon Technologies. Win Source Part Number: 1188250-IRG4BC40W. Packaging: Tube. Mounting Style: Through Hole. Current - Collector Pulsed (Icm): 160A. Switching Energy: 110 μJ (on), 230 μJ (off). Input Type: Standard. Gate Charge: 98nC. Test Condition: 480V, 20A, 10Ohm,... [See More]

• Packing Method: Tube; Tube
• Output Power: 160

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel [See More]

• Packing Method: Tube; Tube

• Package Type: CASE

Manufacturer: Infineon Technologies. Win Source Part Number: 1188252-IRG4IBC10UD. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 28ns. Current - Collector Pulsed (Icm): 27A. Switching Energy: 140 μJ (on), 120 μJ (off). Input Type: Standard. Gate Charge: 15nC. [See More]

• Packing Method: Tube; Tube
• Output Power: 25

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Power Bipolar Transistor [See More]

• Packing Method: Tube; Tube

• Package Type: CDIP14

Manufacturer: Infineon Technologies. Win Source Part Number: 1188253-IRG4IBC20KD. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 37ns. Current - Collector Pulsed (Icm): 23A. Switching Energy: 340 μJ (on), 300 μJ (off). Input Type: Standard. Gate Charge: 34nC. [See More]

• Packing Method: Tube; Tube
• Output Power: 34

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Buffer/Inverter Based MOSFET Driver, 1A, BIPolar, CQCC20 [See More]

• Packing Method: Tube; Tube

• Package Type: LCCC20

Manufacturer: Infineon Technologies. Win Source Part Number: 1188256-IRG4IBC30FD. Packaging: Tube. Mounting Style: Through Hole. Reverse Recovery Time (trr): 42ns. Current - Collector Pulsed (Icm): 120A. Switching Energy: 630 μJ (on), 1.39mJ (off). Input Type: Standard. Gate Charge: 51nC. Test... [See More]

• Packing Method: Tube; Tube
• Output Power: 45

• Package Type: TO-220; SOT3
• T_J: -55 to 150

Buffer/Inverter Based MOSFET Driver, 1.5A, BIPolar, PDIP8 [See More]

• Packing Method: Tube; Tube

• Package Type: PDIP8

TRANS NPN 50V 0.5A TO39 [See More]

• Packing Method: Tube; Tube
• V_CEO: 50

• I_C(max): 500

TRANS NPN 40V 0.2A TO92-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 40

• I_C(max): 200

8.0 A, 100 V NPN Darlington Bipolar Power Transistor [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: PNP; NPN; PNP
• Number of units in IC: 1

TRANS NPN 30V 0.6A TO18 [See More]

• Packing Method: Tube; Tube
• V_CEO: 30

• I_C(max): 600

PB-F POWER TRANSISTOR TO-3PL PC= [See More]

• Packing Method: Tube; Tube
• V_CEO: 230

• I_C(max): 15000

Bipolar Motor Driver Power MOSFET Parallel 36-VMFP [See More]

• Packing Method: Tube; Tube

• T_J: -10 to 150

TRANS PNP 80V 1A TO39 [See More]

• Packing Method: Tube; Tube
• V_CEO: 80

• I_C(max): 1000

TRANS NPN 450V 8A TO220NIS [See More]

• Packing Method: Tube; Tube
• V_CEO: 450

• I_C(max): 8000

Bipolar Power Transistor, NPN, 15 A, 230 V, 200 Watt [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS NPN 80V 1A SOT-32 [See More]

• Packing Method: Tube; Tube
• V_CEO: 80

• I_C(max): 1000

TRANS NPN 50V 5A TO220-3 [See More]

• Packing Method: Tube; Tube

Bipolar Transistor, 50V, 10A, Low VCE(sat), NPN TO-220F-3FS [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS NPN DARL 40V 1.2A TO92-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 40

• I_C(max): 1200

TRANS PNP 45V 1.5A TO126-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 45

• I_C(max): 1500

Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS PNP DARL 60V 8A TO220 [See More]

• Packing Method: Tube; Tube
• V_CEO: 60

• I_C(max): 8000

TRANS NPN 45V 2A TO220 [See More]

• Packing Method: Tube; Tube
• V_CEO: 45

• I_C(max): 2000

Bipolar Transistors - BJT NPN 230V 15A [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS NPN DARL 100V 12A TO3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 100

• I_C(max): 12000

TRANS NPN 45V 10A SOT93 [See More]

• Packing Method: Tube; Tube
• V_CEO: 45

• I_C(max): 10000

Bipolar Transistors - BJT NPN Epitaxial Sil [See More]

• Packing Method: Tube; Tube
• Number of units in IC: 1

• Polarity: NPN; NPN
• I_C(max): 500

TRANS NPN DARL 80V 10A TO220 [See More]

• Packing Method: Tube; Tube
• V_CEO: 80

• I_C(max): 10000

TRANS PNP 45V 4A [See More]

• Packing Method: Tube; Tube

• I_C(max): ? to 3000

Bipolar Transistors - BJT NPN Epitaxial Sil Short Leads [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS PNP 20V 5A PW-MOLD [See More]

• Packing Method: Tube; Tube
• V_CEO: 20

• I_C(max): 5000

TRANS NPN 450V 5A TO220AB [See More]

• Packing Method: Tube; Tube
• V_CEO: 450

• I_C(max): 5000

Bipolar Transistors - BJT NPN General Purpose [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS PNP 300V 0.1A TO126-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 300

• I_C(max): 100

TRANS NPN 450V 5A TO220F [See More]

• Packing Method: Tube; Tube
• V_CEO: 450

• I_C(max): 5000

Bipolar Transistors - BJT NPN High Volt Power [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS PNP 50V 10A TO220NIS [See More]

• Packing Method: Tube; Tube
• V_CEO: 50

• I_C(max): 10000

TRANS NPN 400V 8A TO220-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 400

• I_C(max): 8000

Bipolar Transistors - BJT NPN Multiepitaxial Fast Swtch Trnsistr [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS PNP 230V 15A TO3P [See More]

• Packing Method: Tube; Tube
• V_CEO: 230

• I_C(max): 15000

RF SMALL SIGNAL TRANSISTOR [See More]

• Packing Method: Tube; Tube
• Output Power: 0.1500

• V_CEO: 12

Bipolar Transistors - BJT NPN Silicon Transistor [See More]

• Packing Method: Tube; Tube
• Number of units in IC: 1

• Polarity: NPN
• I_C(max): 6000

TRANS PNP 250V 17A TO264-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 250

• I_C(max): 17000

RF TRANS 5 PNP 15V 5.5GHZ 16QFN [See More]

• Packing Method: Tube; Tube
• Output Power: 0.1500

• V_CEO: 15

Bipolar Transistors - BJT PWR BIP/S.SIGNAL [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS PNP 250V 17A TO3P [See More]

• Packing Method: Tube; Tube
• V_CEO: 250

• I_C(max): 17000

TRANS NPN 100V 7A TO220-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 100

• I_C(max): 7000

Hybrid Emitter Switched Bipolar Transistor 4-Pin(4+Tab) TO-247HP Tube [See More]

• Packing Method: Tube; Tube
• Number of units in IC: 1

• Polarity: NPN; NPN
• I_C(max): 6000

TRANS PNP 20A 50V TO220 [See More]

• Packing Method: Tube; Tube

TRANS NPN 300V 0.2A TO126 [See More]

• Packing Method: Tube; Tube
• V_CEO: 300

• I_C(max): 200

ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS PNP 140V 12A TO3P-3L [See More]

• Packing Method: Tube; Tube
• V_CEO: 140

• I_C(max): 12000

TRANS NPN 70V 5A TO220F-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 70

• I_C(max): 5000

STMICROELECTRONICS - ULN2802A - Bipolares (BJT) Transistor-Array, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 8

TRANS NPN 230V 15A TO3P [See More]

• Packing Method: Tube; Tube
• V_CEO: 230

• I_C(max): 15000

TRANS PNP DARL 100V 2A IPAK [See More]

• Packing Method: Tube; Tube
• V_CEO: 100

• I_C(max): 2000

STMICROELECTRONICS 2N5195 Bipolar (BJT) Single Transistor, General Purpose, PNP, -80 V, 2 MHz, 40 W, -4 A, 20 hFE [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: PNP; PNP
• Number of units in IC: 1

TRANS NPN 50V 10A TO220F-3FS [See More]

• Packing Method: Tube; Tube
• V_CEO: 50

• I_C(max): 10000

TRANS NPN 700V 4A DPAK [See More]

• Packing Method: Tube; Tube
• V_CEO: 700

• I_C(max): 4000

STMICROELECTRONICS 2STW1695Bipolar (BJT) Single Transistor, PNP, 140 V, 20 MHz, 100 W, 7 A, 70 [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: PNP; PNP
• Number of units in IC: 1

TRANS NPN 50V 5A TO220-3 [See More]

• Packing Method: Tube; Tube

• I_C(max): ? to 3000

TRANS NPN 400V 4A TO220F [See More]

• Packing Method: Tube; Tube
• V_CEO: 400

• I_C(max): 4000

Trans GP BJT NPN 100V 4A Automotive 3-Pin(2+Tab) DPAK Rail [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: NPN; NPN
• Number of units in IC: 1

TRANS NPN 80V 5A TO220FP [See More]

• Packing Method: Tube; Tube
• V_CEO: 80

• I_C(max): 5000

TRANS 8NPN DARL 95V 0.5A 18DIP [See More]

• Packing Method: Tube; Tube
• V_CEO: 95

• I_C(max): 500

Trans GP BJT NPN|PNP 50V 5A 3-Pin TO-220AB [See More]

• Packing Method: Tube; Tube
• I_C(max): 5000

• Polarity: NPN; PNP
• V_CEO: 50

TRANS PNP 230V 15A TO264 [See More]

• Packing Method: Tube; Tube
• V_CEO: 230

• I_C(max): 15000

TRANSISTOR NPN 250V TO-3P [See More]

• Packing Method: Tube; Tube

Trans GP BJT PNP 250V 17A 3-Pin(3+Tab) TO-264 Tube [See More]

• Packing Method: Tube; Tube
• Transistor Technology / Material: SILICON

• Polarity: PNP; PNP
• Number of units in IC: 1

TRANS NPN DARL 80V 25A TO247-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 80

• I_C(max): 25000

TRANS PNP 100V 5A TO220AB [See More]

• Packing Method: Tube; Tube
• V_CEO: 100

• I_C(max): 5000

TRANS NPN DARL 325V 4A TO220-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 325

• I_C(max): 4000

TRANS PNP DARL 60V 10A TO247-3 [See More]

• Packing Method: Tube; Tube
• V_CEO: 60

• I_C(max): 10000

CONN D-SUB PLUG 9POS VERT SLDR [See More]

• Packing Method: Tube; Tube

• Output Power: 1

IC PWR RELAY 7NPN 1:1 16DIP [See More]

• Packing Method: Tube; Tube
• V_CEO: 50

• I_C(max): 500

CONN D-SUB RCPT 9POS VERT SLDR [See More]

• Packing Method: Tube; Tube

• Output Power: 1

TRANS 8NPN DARL 50V 0.5A 18DIP [See More]

• Packing Method: Tube; Tube
• V_CEO: 50

• I_C(max): 500