TO-263 Bipolar RF Transistors

Manufacturer: Infineon Technologies. Win Source Part Number: 1188215-IRG4BC10SD-S. Packaging: Tube. Mounting Style: SMD. Reverse Recovery Time (trr): 28ns. Current - Collector Pulsed (Icm): 18A. Switching Energy: 310 μJ (on), 3.28mJ (off). Input Type: Standard. Gate Charge: 15nC. Test... [See More]

• Package Type: TO-263; SOT3
• Output Power: 38

• Packing Method: Tube; Tube
• T_J: -55 to 150

HiRel Microwave Transistor. Summary of Features. HiRel Discrete and Microwave Semiconductor. For High Gain Low Noise Amplifiers. For Oscillators up to 10 GHz. Noise Figure F = 1.1 dB at 1.8 GHz. Outstanding Gms = 21dB at 1.8 GHz. Hermetically sealed microwave package. Transition Frequency fT = 22... [See More]

• Package Type: TO-263; P-TO263-5
• I_C(max): 35

• Packing Method: SINGLE BOX
• V_CEO: 4.5

Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel [See More]

• Package Type: TO-263; TO-263-3, D2PAK

• Packing Method: Tape Reel; Tape & Reel

BIP D2PAK NPN 8A 80V [See More]

• Package Type: TO-263; TO-263

• Polarity: NPN

TRANS NPN 80V 5A TO263AB [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• I_C(max): 5000

• Polarity: NPN; NPN
• V_CEO: 80

Manufacturer: Infineon Technologies. Win Source Part Number: 1188225-IRG4BC20MD-SPBF. Packaging: Tube. Mounting Style: SMD. Reverse Recovery Time (trr): 37ns. Current - Collector Pulsed (Icm): 36A. Switching Energy: 410 μJ (on), 2.03mJ (off). Input Type: Standard. Gate Charge: 39nC. Test... [See More]

• Package Type: TO-263; SOT3
• Output Power: 60

• Packing Method: Tube; Tube
• T_J: -55 to 150

STMicroelectronics, 2STBN15D100 [See More]

• Package Type: TO-263; TO-263

TRANS NPN DARL 100V 12A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• I_C(max): 12000

• Polarity: NPN - Darlington; NPN
• V_CEO: 100

Manufacturer: Infineon Technologies. Win Source Part Number: 1188231-IRG4BC20UD-S. Packaging: Tube. Mounting Style: SMD. Reverse Recovery Time (trr): 37ns. Current - Collector Pulsed (Icm): 52A. Switching Energy: 160 μJ (on), 130 μJ (off). Input Type: Standard. Gate Charge: 27nC. Test... [See More]

• Package Type: TO-263; SOT3
• Output Power: 60

• Packing Method: Tube; Tube
• T_J: -55 to 150

STMicroelectronics, BUB941ZTT4 [See More]

• Package Type: TO-263; TO-263

TRANS NPN DARL 350V 10A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• I_C(max): 10000

• Polarity: NPN - Darlington; NPN
• V_CEO: 350

Manufacturer: Infineon Technologies. Win Source Part Number: 1188241-IRG4BC30S-S. Packaging: Tube. Mounting Style: SMD. Current - Collector Pulsed (Icm): 68A. Switching Energy: 260 μJ (on), 3.45mJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 18A, 23Ohm, 15V. Categories:... [See More]

• Package Type: TO-263; SOT3
• Output Power: 100

• Packing Method: Tube; Tube
• T_J: -55 to 150

NPN, TO-263AB, 80V 5A, Power Transistor [See More]

• Package Type: TO-263; TO-263AB

• Polarity: NPN

TRANS NPN DARL 350V 10A D2PAK [See More]

• Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• I_C(max): 10000

• Polarity: NPN - Darlington; NPN
• V_CEO: 350

Manufacturer: Infineon Technologies. Win Source Part Number: 1188244-IRG4BC30U-S. Packaging: Tube. Mounting Style: SMD. Current - Collector Pulsed (Icm): 92A. Switching Energy: 160 μJ (on), 200 μJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 12A, 23Ohm, 15V. [See More]

• Package Type: TO-263; SOT3
• Output Power: 100

• Packing Method: Tube; Tube
• T_J: -55 to 150

100V 2W 15@3A,4V 6A PNP TO-263-2 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-263
• I_C(max): 6000

• Polarity: PNP
• V_CEO: 100