TO-263 Bipolar RF Transistors

17 Results
HiRel Silicon Bipolar Transistor -- BFY420 (ES) - Image
View Datasheet
HiRel Silicon Bipolar Transistor -- BFY420 (ES)
from Infineon Technologies AG

HiRel Microwave Transistor. Summary of Features. HiRel Discrete and Microwave Semiconductor. For High Gain Low Noise Amplifiers. For Oscillators up to 10 GHz. Noise Figure F = 1.1 dB at 1.8 GHz. Outstanding Gms = 21dB at 1.8 GHz. Hermetically sealed microwave package. Transition Frequency fT = 22... [See More]

  • Package Type: TO-263; P-TO263-5
  • IC(max): 35
  • Packing Method: SINGLE BOX
  • VCEO: 4.5
IGBTs - Single - IRG4BC10SD-S -- 1188215-IRG4BC10SD-S - Image
IGBTs - Single - IRG4BC10SD-S -- 1188215-IRG4BC10SD-S [IRG4BC10SD-S from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188215-IRG4BC10SD-S. Packaging: Tube. Mounting Style: SMD. Reverse Recovery Time (trr): 28ns. Current - Collector Pulsed (Icm): 18A. Switching Energy: 310 μJ (on), 3.28mJ (off). Input Type: Standard. Gate Charge: 15nC. Test... [See More]

  • Package Type: TO-263; SOT3
  • Output Power: 38
  • Packing Method: Tube; Tube
  • TJ: -55 to 150
Bipolar Transistors -- 1844959P - Image
Bipolar Transistors -- 1844959P [MJB44H11G from onsemi]
from RS Components, Ltd.

BIP D2PAK NPN 8A 80V [See More]

  • Package Type: TO-263; TO-263
  • Polarity: NPN
NGB8207ABNT4G - Image
View Datasheet
NGB8207ABNT4G [NGB8207ABNT4G from onsemi]
from Rochester Electronics

Insulated Gate Bipolar Transistor, 20A I(C), 365V V(BR)CES, N-Channel [See More]

  • Package Type: TO-263; TO-263-3, D2PAK
  • Packing Method: Tape Reel; Tape & Reel
IGBTs - Single - IRG4BC20MD-SPBF -- 1188225-IRG4BC20MD-SPBF - Image
IGBTs - Single - IRG4BC20MD-SPBF -- 1188225-IRG4BC20MD-SPBF [IRG4BC20MD-SPBF from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188225-IRG4BC20MD-SPBF. Packaging: Tube. Mounting Style: SMD. Reverse Recovery Time (trr): 37ns. Current - Collector Pulsed (Icm): 36A. Switching Energy: 410 μJ (on), 2.03mJ (off). Input Type: Standard. Gate Charge: 39nC. Test... [See More]

  • Package Type: TO-263; SOT3
  • Output Power: 60
  • Packing Method: Tube; Tube
  • TJ: -55 to 150
Bipolar Transistors -- 1888419P - Image
Bipolar Transistors -- 1888419P [2STBN15D100 from STMicroelectronics, Inc.]
from RS Components, Ltd.

STMicroelectronics, 2STBN15D100 [See More]

  • Package Type: TO-263; TO-263
IGBTs - Single - IRG4BC20UD-S -- 1188231-IRG4BC20UD-S - Image
IGBTs - Single - IRG4BC20UD-S -- 1188231-IRG4BC20UD-S [IRG4BC20UD-S from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188231-IRG4BC20UD-S. Packaging: Tube. Mounting Style: SMD. Reverse Recovery Time (trr): 37ns. Current - Collector Pulsed (Icm): 52A. Switching Energy: 160 μJ (on), 130 μJ (off). Input Type: Standard. Gate Charge: 27nC. Test... [See More]

  • Package Type: TO-263; SOT3
  • Output Power: 60
  • Packing Method: Tube; Tube
  • TJ: -55 to 150
Bipolar Transistors -- 1888431P - Image
Bipolar Transistors -- 1888431P [BUB941ZTT4 from STMicroelectronics, Inc.]
from RS Components, Ltd.

STMicroelectronics, BUB941ZTT4 [See More]

  • Package Type: TO-263; TO-263
IGBTs - Single - IRG4BC30S-S -- 1188241-IRG4BC30S-S - Image
IGBTs - Single - IRG4BC30S-S -- 1188241-IRG4BC30S-S [IRG4BC30S-S from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188241-IRG4BC30S-S. Packaging: Tube. Mounting Style: SMD. Current - Collector Pulsed (Icm): 68A. Switching Energy: 260 μJ (on), 3.45mJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 18A, 23Ohm, 15V. Categories:... [See More]

  • Package Type: TO-263; SOT3
  • Output Power: 100
  • Packing Method: Tube; Tube
  • TJ: -55 to 150
Bipolar Transistors -- 2374293 - Image
Bipolar Transistors -- 2374293 [2SCR586JGTLL from ROHM Semiconductor USA, LLC]
from RS Components, Ltd.

NPN, TO-263AB, 80V 5A, Power Transistor [See More]

  • Package Type: TO-263; TO-263AB
  • Polarity: NPN
IGBTs - Single - IRG4BC30U-S -- 1188244-IRG4BC30U-S - Image
IGBTs - Single - IRG4BC30U-S -- 1188244-IRG4BC30U-S [IRG4BC30U-S from Infineon Technologies AG]
from Win Source Electronics

Manufacturer: Infineon Technologies. Win Source Part Number: 1188244-IRG4BC30U-S. Packaging: Tube. Mounting Style: SMD. Current - Collector Pulsed (Icm): 92A. Switching Energy: 160 μJ (on), 200 μJ (off). Input Type: Standard. Gate Charge: 50nC. Test Condition: 480V, 12A, 23Ohm, 15V. [See More]

  • Package Type: TO-263; SOT3
  • Output Power: 100
  • Packing Method: Tube; Tube
  • TJ: -55 to 150
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT -- MJB42CT4G - Image
View Datasheet
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT -- MJB42CT4G [MJB42CT4G from onsemi]
from LCSC Electronics Technology (HK) Limited

100V 2W 15@3A,4V 6A PNP TO-263-2 Bipolar Transistors - BJT ROHS [See More]

  • Package Type: TO-263
  • IC(max): 6000
  • Polarity: PNP
  • VCEO: 100
Single Bipolar Transistors -- 2SCR586JFRGTLL - Image
View Datasheet
Single Bipolar Transistors -- 2SCR586JFRGTLL [2SCR586JFRGTLL from ROHM Co., Ltd.]
from ODG (Origin Data Global)

TRANS NPN 80V 5A LPTL [See More]

  • Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • IC(max): 5000
  • Polarity: NPN; NPN
  • VCEO: 80
Single Bipolar Transistors -- 2SCR586JGTLL - Image
View Datasheet
Single Bipolar Transistors -- 2SCR586JGTLL [2SCR586JGTLL from ROHM Co., Ltd.]
from ODG (Origin Data Global)

TRANS NPN 80V 5A TO263AB [See More]

  • Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • IC(max): 5000
  • Polarity: NPN; NPN
  • VCEO: 80
Single Bipolar Transistors -- 2STBN15D100 - Image
View Datasheet
Single Bipolar Transistors -- 2STBN15D100 [2STBN15D100 from STMicroelectronics]
from ODG (Origin Data Global)

TRANS NPN DARL 100V 12A D2PAK [See More]

  • Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • IC(max): 12000
  • Polarity: NPN - Darlington; NPN
  • VCEO: 100
Single Bipolar Transistors -- BUB323ZG - Image
View Datasheet
Single Bipolar Transistors -- BUB323ZG [BUB323ZG from onsemi]
from ODG (Origin Data Global)

TRANS NPN DARL 350V 10A D2PAK [See More]

  • Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • IC(max): 10000
  • Polarity: NPN - Darlington; NPN
  • VCEO: 350
Single Bipolar Transistors -- BUB323ZT4G - Image
View Datasheet
Single Bipolar Transistors -- BUB323ZT4G [BUB323ZT4G from onsemi]
from ODG (Origin Data Global)

TRANS NPN DARL 350V 10A D2PAK [See More]

  • Package Type: TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • IC(max): 10000
  • Polarity: NPN - Darlington; NPN
  • VCEO: 350