1.8 V FRAM Memory Chips
from Infineon Technologies AG
Designers who used this product also designed with. S25FL064LABMFV010 |. Quad SPI Flash. IPD80R900P7 |. 500V-950V CoolMOS ™ N-Channel Power MOSFET. S29AL008J70BFM020 |. Standard Interface. SPP17N80C3 |. 500V-950V CoolMOS ™ N-Channel Power MOSFET. S25FL064LABMFV010 |. Quad SPI Flash. [See More]
- Supply Voltage: 1.8V; 3.6V; 1.8 V, 3.6 V
- Package Type: PG-DSO-8
- Density: 2048
- Operating Temperature: -40 to 125
from Infineon Technologies AG
Home // Products // Memories // F-RAM (Ferroelectric RAM) // EXCELON ™ F-RAM // CY15B108QN-50BKXI [See More]
- Supply Voltage: 1.8V; 3.6V; 1.8 V, 3.6 V
- Package Type: PG-BGA-24
- Density: 8192
- Operating Temperature: -40 to 85
from Cypress Semiconductor Corp.
Cypress F-RAM (Ferroelectric RAM) combines nonvolatile data storage with the high performance of RAM. F-RAM provides fast writes at full interface speed. F-RAM does not have any write delays and data is instantly nonvolatile. Traditional nonvolatile memories have delays of 5 or more milliseconds... [See More]
- Supply Voltage: 1.8V; 3V; 5V
- Package Type: SOIC; TSOP; EIAJ, FBGA, TDFN, UDFN
- Density: 4 to 4000
- Pins: 8 to 48