Products/Services for 144 MHz Transistor Power Amplifiers

  • Power Amplifiers-Image
    Power Amplifiers - (148 companies)
    Power amplifiers deliver a specific amount of AC power to a load. They are used in audio frequency and radio frequency applications. Types There are many different types of power amplifiers. Examples include: RF power amplifiers high power...
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  • RF Power Dividers and RF Power Combiners-Image
    RF Power Dividers and RF Power Combiners - (287 companies)
    RF power dividers and RF power combiners are circuits that accept input signals and deliver multiple outputs that are equal in phase and amplitude. There are two basic product categories: passive and active. Passive products produce an output signal...
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  • Transistors-Image
    Transistors - (634 companies)
    ...transistors are preferred for high speed switching applications and as high-power amplifiers for systems with large current flow. Field effect transistors are preferred for weak-signal applications (e.g. simple wireless communications and broadcast...
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  • Power Bipolar Transistors-Image
    Power Bipolar Transistors - (83 companies)
    Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals...
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  • Power Operational Amplifiers-Image
    Power Operational Amplifiers - (74 companies)
    ...with three leads. TO-92, another transistor outline package, is often used for low power devices. TO-220 is suitable for high power, medium current, and fast-switching power devices. Standards. Many suppliers specify power operational amplifiers...
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    Oscillators - (558 companies)
    ...with transistor-transistor logic (TTL) use a 5 V power supply. TTL signals are "low" when between 0 V and 0.8 V with respect to the ground terminal and "high" when between 2 V and 5 V. A Complementary metal-oxide semiconductor (CMOS) is a low-power technology that can...
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    RF Transistors - (133 companies)
    RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. RF transistors are designed to handle high-power radio frequency (RF) signals in devices...
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    Optical Bandpass Filters - (96 companies)
    Optical bandpass filters are designed to transmit a specific waveband. They are composed of many thin layers of dielectric materials, which have differing refractive indices to produce constructive and destructive interference in the transmitted light.
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    Bipolar RF Transistors - (67 companies)
    Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters...
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    RF MOSFET Transistors - (45 companies)
    MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. MOSFET RF transistors...
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  • The design of CMOS continuous-time VHF current and voltage-mode lowpass filters with Q-enhancement circuits
    When the control voltage Vc4 changes from 0 Volt to 2.5 Volt and the Miller capacitance CM = 1.5 pF, the HSPICE simulated maximum-gain frequency f M (center frequency fo) changes from 144 MHz (166.2 MHz) to 205.6 .... With suitable transistor geometric ratio of the voltage amplifiers in the Q-enhancement circuits, the gain of the amplifiers can be as high as 1.87 and the -3 dB frequency as high as 1.3 GHz under 218 mW power dissipation.
  • 1978 Index IEEE Transactions on Consumer Electronics Vol. CE-24
    …broadcast receivers; Radio communication receivers; TV receivers Radio spectrum management CB radio interference with TV and FM broadcast reception; CB expansion to 48- 50 MHz and 410-420 MHz bands; Beeman, Robert H … nJ Feb 78 135- 144 (2D05) Resonators; cf. Acoustic .... S Semiconductor switches; cf. Bipolar transistor switches; Light-triggered switches Signal processing; cf. TV receiver signal processing Signal processing AM/FM … 78 488-491 (4D04) Switches; cf. Light-triggered switches; Semiconductor switches Switching ampliers audio amplifiers , class G power amplifier using MOSFETs in…
  • An 1 GHz Class E LDMOS Power Amplifier
    One example of a high efficient Class E amplifier implemented with an LDMOS transistor as switching element has been reported in [3]. .... The amplifier achieved an output power of 54 W with 70 % efficiency at 144 MHz .
  • An 1 GHz class E LDMOS power amplifier
    One example of a high efficient Class E amplifier implemented with an LDMOS transistor tu switching element has been reported in [3]. .... The amplifier achieved an output power of 54W with 70% efficiency at 144 MHz .
  • An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor
    Due to the evolution of advanced MOS transistor technologies like lateral diffused metal–oxide–semiconductor (LDMOS), and the increasing de- mand of high-efficiency amplifiers for mobile communication, the class-E concept is again receiving attention, and output powers of up to 400 W … novel concept of the output network and the usage of the newly developed Silicon LDMOS device made it possible to achieve a record-high output power of 54 W with a comparatively high efficiency of 70% at a frequency of 144 MHz .
  • Large-Signal Approach Yields Low-Noise VHF/UHF Oscillators | Components content from Microwaves & RF
    Designed for low-noise, high-gain amplifiers to 2 GHz, the transistor features a transition frequency (fT) of 8 GHz for +8 VDC collectoremitter voltage and 50 mA collector current. .... The first step in designing the oscillator circuit for this transistor is to determine the small-signal parameters for the transistor at 144 MHz and under the operating conditions of +8.8 VDC collector-emitter voltage (Vce, 10 mA collector current (Ic .... For more output power , a collector current of 30 mA is a better choice.
  • APS Science 2009.
    Preliminary tests indicate that the design of a 200-kW, solid-state rf power system operating at 352- MHz and utilizing single-package transistor power amplifier devices operating at 1kW CW is feasible. .... 144 .
  • Low Cost RF Amplifier for Community TV
    It uses FET transistor for RF amplifier [2]. .... It can reduce power dissipation and increase the power generated [3]. .... It has been investigated for frequency UHF (225 MHz -400 MHz) and VHF (118 MHz- 144 MHz) [4].
  • A high-dynamic range SiGe low-noise amplifier for X-band radar applications
    [11] M. Byung-Wook, et al., “Ka-band SiGe HBT low noise amplifier design for simultaneous noise and input power matching,” Microwave and Wireless Components Letters, IEEE, vol.17, no.12, pp.891-893, Dec. 2007. .... S.P. Voinigescu, et al., “A scalable high-frequency noise model for bipolar transistors with application to .... [15] J.A. Tirado-Méndez, et al., “Comparison of the effectiveness of four linearizing techniques used in SiGe HBT LNA at 1900 MHz and low- bias voltage,” International Journal of RF and Microwave Computer- Aided Engineering, 14: 144 –152.
  • The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation
    16, pp. 142– 144 , Apr. 1995. .... [16] R. R. Siergiej et al., “High power 4H- SiC static induction transistors ,” in IEDM Tech. Dig., 1995, pp. 95–353. .... [18] K. Endoh et al., “150 MHz SIT amplifier ” (in Japanese), in Proc. 6th SI Symp., Final Rep. to the Japan Key Technology Ctr. by the Small Power Communication Co., 1993.