The IMS5420-TH white light interferometer opens up new perspectives in the thickness measurement of monocrystalline silicon wafers. Thanks to the high performance SLED, the IMS5420-TH can be used for undoped, doped and highly doped SI wafers. The thickness measurement range extends from 0.05 to 1.05 mm. The measurable thickness of air gaps is even up to 4 mm.

Maximum precision is essential in the production of semiconductor wafers. An important process step is the lapping of the silicon blanks, which are brought to a uniform thickness. The white light interferometers of the interferoMETER IMS5420 series were developed to continuously monitor the thickness.

These consist of a compact sensor and a controller, which is housed in a robust industrial housing. An active temperature control integrated in the controller ensures high stability of the measurement.

The interferometer is available either as a thickness or multi-peak thickness measurement system. The multi-peak thickness measurement system can measure the thickness of up to five layers, e.g. wafer thickness, air gap, foiling and coatings >50 µm. For applications in difficult environmental conditions, the IMS5420IP67 controller is available with IP67 and stainless steel housing as well as suitable fibre optics and sensors.

Micro-Epsilon offers suitable sensors, cables and feedthroughs for applications in vacuum environments.