Indium Gallium Arsenide Photodiodes
from Hamamatsu Photonics
I 2 C-compatible InGaAs photodiodes [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 900 to 1700
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1550
from Electro Optical Components, Inc.
IBSG produces the full line of light emitting diodes, laser diodes and photodiodes for mid-infrared spectral range 1600-5000 nm. In addition to a wide range of standard products they offer custom designed solutions for different purposes. You can find use of IBSG products in detection systems for... [See More]
- Photodiode Material: Indium Gallium Arsenide; InGaAsSb, AlGaAsSb, GaSb
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 8.00E8 to 4.90E9
from RS Components, Ltd.
High Speed InGaAs Photodiode, 120um [See More]
- Photodiode Material: Ingaas
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1700
from Hamamatsu Photonics
I 2 C-compatible InGaAs photodiodes [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 900 to 1700
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1550
from RS Components, Ltd.
Photodiode High Speed InGaAs 120um [See More]
- Photodiode Material: Ingaas
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
InGaAs APD that greatly reduces dark current. This InGaAs APD greatly reduces dark current over existing products by the use of a new device structure and improved processing. The G14858-0020AA is used for distance measurement, low-light-level detection, and so on. Features. - Low dark current. -... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 950 to 1700
- Photodiode Type: Avalanche Photodiode
- Peak Sensitivity Wavelength: 1550
from RS Components, Ltd.
Photodiode InGaAs 1mm [See More]
- Photodiode Material: Ingaas
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Surface mount type COB package near-infrared detector. The G15978-0020P is an InGaAs APD available in a surface mount type COB package. It is much smaller than the previous metal package type (G14858-0020AA), making it suitable for inclusion in compact and mobile equipment. Features. - Low dark... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 950 to 1700
from RS Components, Ltd.
Photodiode InGaAs Quadrant Segmented 3mm [See More]
- Photodiode Material: Ingaas
- Spectral Response Range: 1100 to 1620
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Wide spectral response range (0.5 to 1.7 μm), active area 0.3 mm dia. The G10899-003K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 500 to 1700
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1550
from RS Components, Ltd.
High Speed InGaAs Photodiode,300um [See More]
- Photodiode Material: Ingaas
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1700
from Hamamatsu Photonics
Wide spectral response range (0.5 to 1.7 μm), Active area: 2 mm dia. The G10899-02K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 500 to 1700
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1550
from RS Components, Ltd.
High Speed InGaAs Photodiode,3000um [See More]
- Photodiode Material: Ingaas
- Spectral Response Range: 1100 to 1620
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Small package, surface mount type, Active area: Φ0.2 mm [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 900 to 1700
- Active Area Diameter or Length: 0.2000
from RS Components, Ltd.
High Speed InGaAs Photodiode,300um [See More]
- Photodiode Material: Ingaas
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1700
from Hamamatsu Photonics
Small package, surface mount type, Active area: Φ0.3 mm [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 900 to 1700
- Active Area Diameter or Length: 0.3000
from RS Components, Ltd.
High Speed InGaAs Photodiode,3000um [See More]
- Photodiode Material: Ingaas
- Spectral Response Range: 1100 to 1620
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Small package, surface mount type, Active area: Φ1.0 mm [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 900 to 1700
- Active Area Diameter or Length: 1
from RS Components, Ltd.
Infrared InGaAs PIN Photodiode [See More]
- Photodiode Material:
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1500
from Hamamatsu Photonics
Photosensitive area: φ5 mm. Features. - Low noise, low dark current. - Low terminal capacitance. - Photosensitive area: φ5 mm. - Low noise [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 900 to 1700
- Active Area Diameter or Length: 5
from RS Components, Ltd.
Infrared InGaAs PIN Photodiode [See More]
- Photodiode Material:
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1500
from Hamamatsu Photonics
Photosensitive area: φ1 mm. Features. - Low noise, low dark current. - Low terminal capacitance. - Photosensitive area: φ1 mm [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 900 to 1670
- Active Area Diameter or Length: 1
from RS Components, Ltd.
Infrared InGaAs PIN Photodiode [See More]
- Photodiode Material:
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1500
from Hamamatsu Photonics
Photosensitive area: φ1 mm. Features. - Low noise, low dark current. - Low terminal capacitance. - Photosensitive area: φ1 mm [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 900 to 1650
- Active Area Diameter or Length: 1
from RS Components, Ltd.
Infrared InGaAs PIN Photodiode [See More]
- Photodiode Material:
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1500
from Hamamatsu Photonics
Long wavelength type (cutoff wavelength: 1.9 μm). Features. - Cutoff wavelength: 1.9 μm. - Low cost. - Photosensitive area: φ0.3 mm. - Low noise. - High sensitivity. - High reliability. - High-speed response [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1750
- Spectral Response Range: 900 to 1900
- Active Area Diameter or Length: 0.3000
from RS Components, Ltd.
Infrared InGaAs PIN Photodiode [See More]
- Photodiode Material:
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 2300
from Hamamatsu Photonics
Long wavelength type (cutoff wavelength: 1.9 μm). Features. - Cutoff wavelength: 1.9 μm. - Low cost. - Photosensitive area: φ0.5 mm. - Low noise. - High sensitivity. - High reliability. - High-speed response [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1750
- Spectral Response Range: 900 to 1900
- Active Area Diameter or Length: 0.5000
from RS Components, Ltd.
Infrared InGaAs PIN Photodiode [See More]
- Photodiode Material:
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 2300
from Hamamatsu Photonics
Long wavelength type (cutoff wavelength: 1.9 μm). Features. - Cutoff wavelength: 1.9 μm. - Low cost. - Photosensitive area: φ1 mm. - Low noise. - High sensitivity. - High reliability. - High-speed response [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1750
- Spectral Response Range: 900 to 1900
- Active Area Diameter or Length: 1
from RS Components, Ltd.
InGaAs photodiode [See More]
- Photodiode Material:
- Peak Sensitivity Wavelength: 1550
- Photodiode Spectral Response: Visible
- Photodiode Package: TO-5
from Hamamatsu Photonics
Long wavelength type (cutoff wavelength: 1.9 μm). Features. - Cutoff wavelength: 1.9 μm. - Low cost. - Photosensitive area: φ2 mm. - Low noise. - High sensitivity. - High reliability. - High-speed response [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1750
- Spectral Response Range: 900 to 1900
- Active Area Diameter or Length: 2
from RS Components, Ltd.
InGaAs PIN photodiode [See More]
- Photodiode Material:
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Long wavelength type (cutoff wavelength: 1.9 μm). Features. - Cutoff wavelength: 1.9 μm. - Low cost. - Photosensitive area: φ3 mm. - Low noise. - High sensitivity. - High reliability. - High-speed response [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1750
- Spectral Response Range: 900 to 1900
- Active Area Diameter or Length: 3
from RS Components, Ltd.
InGaAs PIN photodiode [See More]
- Photodiode Material:
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Long wavelength type (cutoff wavelength: 1.87 μm). Features. - Cutoff wavelength: 1.87 μm. - One-stage TE-cooled. - Low cost. - Photosensitive area: φ0.3 mm. - Low noise. - High sensitivity. - High reliability. - High-speed response [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1750
- Spectral Response Range: 900 to 1870
- Active Area Diameter or Length: 0.3000
from RS Components, Ltd.
Photodiode High Speed InGaAs 120um [See More]
- Photodiode Material: Ingaas
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Long wavelength type (cutoff wavelength: 1.85 μm). Features. - Cutoff wavelength: 1.85 μm. - Two-stage TE-cooled. - Low cost. - Photosensitive area: φ0.3 mm. - Low noise. - High sensitivity. - High reliability. - High-speed response [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1750
- Spectral Response Range: 900 to 1850
- Active Area Diameter or Length: 0.3000
from Hamamatsu Photonics
Long wavelength type (cutoff wavelength: 2.55 μm). Features. - Cutoff wavelength: 2.55 μm. - Two-stage TE-cooled. - Low cost. - Photosensitive area: φ1 mm. - Low noise. - High sensitivity. - High reliability. - High-speed response. - High short-wavelength sensitivity: 0.4 A/W (... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 2300
- Spectral Response Range: 900 to 2550
- Active Area Diameter or Length: 1
from Hamamatsu Photonics
The G13176-003P is a small-size near infrared detector available in a surface mount COB package. Its size is drastically reduced compared to the previous metal package type (G12180-003A). The spectral response covers a range from 0.9 to 1.7 μm (with peak sensitivity wavelength at 1.55 μm). [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
The G13176-010P is a small-size near infrared detector available in a surface mount COB package. Its size is drastically reduced compared to the previous metal package type (G12180-010A). The spectral response covers a range from 0.9 to 1.7 μm (with peak sensitivity wavelength at 1.55 μm). [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Surface mount type COB package with lens. The G14448-003L is a compact near-infrared detector available in a surface mount type COB package with lens. Using the lens provides narrow directivity, which allows for pinpoint analysis/measurement and other uses. The small package makes it suitable for... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Angled PC compatible, receptacle type. This is a high-speed photosensor developed for Doppler LiDAR. This is a receptacle type compatible with FC/Angled PC, and has a built-in high-speed InGaAs PIN photodiode. Features. - High-speed response: 2 GHz typ. - Low dark current: 20 pA typ. - FC/Angled PC... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 900 to 1700
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1550
from Hamamatsu Photonics
Sub-mount type photodiode for LD monitor. Features. - Active area G15553-003C: φ0.3 mm. - Miniature package: 2 × 2 × 1 mm. - Precise chip position tolerance: ±0.075 mm [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 900 to 1700
- Active Area Diameter or Length: 0.3000
from First Sensor AG
First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include both hermetic TO... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: Visible
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from OSI Optoelectronics
The LAPD 1550-200R is a 200 um InGaAs APD housed in a hermetic 3 pin TO46 Package. The low noise and high sensitivity of the LAPD 1550-200R APD makes it ideal for use in range finding, sensors, OTDRs and any other low light level detection application. Product Features. Low Noise. High Sensitivity. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 800 to 1700
from California Eastern Laboratories - CEL
The NR4510 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310 to 1550
from Marktech Optoelectronics
Photo Diode chip active area sizes from 0.1mm to 3.0mm are available to provide the optimum balance between low dark current, high speed and light sensitivity. This allows for increased flexibility and options in a variety of applications ranging from fiber optics and high speed optical... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: Visible
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1300
from OSI Optoelectronics
FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to be flip chip mounted (active area facing up), or... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from California Eastern Laboratories - CEL
The NR6300 Series is an InGaAs APD in TO-CAN package designed for sub assemblies used in OTDR Test Equipment [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310 to 1550
from OSI Optoelectronics
FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5 ° greatly reduces the back reflection. The chips can be... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1650
from California Eastern Laboratories - CEL
The NR8300FP-CC is an InGaAs avalanche photo diode module in a coaxial package with single mode fiber, and can be used in OTDR systems. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310 to 1550
from OSI Optoelectronics
FCI-InGaAs-XXX-CCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates with glass windows. These devices have a glass window attached to the ceramic where fibers can be epoxy or... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1650
from California Eastern Laboratories - CEL
The NR8360JP-BC is an InGaAs avalanche photodiode module in a 14-pin DIP package with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and optical test instruments, especially OTDR. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310 to 1550
from OSI Optoelectronics
FCI-InGaAs-XXX-LCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates. The chips can be epoxy/eutectic mounted onto the ceramic substrate. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from California Eastern Laboratories - CEL
InGaAs APD In Coaxial Package For Fiber Optic Communication And OTDR Applications [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310
from OSI Optoelectronics
The LAPD 3080 is a 75 um InGaAs, mesa structure APD, housed in a hermetic 3 pin coaxial package. The APD is coupled to either a multimode or single mode fiber pigtail. The APD is of mesa type construction giving the device fast recovery times from optical overloads. The low noise, overload tolerant... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 800 to 1700
from OSI Optoelectronics
TheFCI-InGaAs-XX-XX-XX with active area of 70µm and 120µm are part of OSI Optoelectronics family of high speed IR sensitive detectors with fiber pigtail package. The single/multi-mode fiber is optically aligned to either the hermetically sealed InGaAs diode in TO-46 lens cap package enhancing the... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1650
from OSI Optoelectronics
FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. These large active area devices are ideal for use in... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from OSI Optoelectronics
FCI-H155/622M-InGaAs-70 series are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from OSI Optoelectronics
FCI-H125/250G-InGaAs-XX series are compact and integrated high speed InGaAs photodetector with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high speed signal amplification. High speed and... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1650
from OSI Optoelectronics
FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1mm and 3mm active area diameter. The InGaAs Quad series with high response uniformity and the low cross talk between the elements are ideal for accurate nulling or... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1620