Indium Gallium Arsenide Photodiodes
from Electro Optical Components, Inc.
IBSG produces the full line of light emitting diodes, laser diodes and photodiodes for mid-infrared spectral range 1600-5000 nm. In addition to a wide range of standard products they offer custom designed solutions for different purposes. You can find use of IBSG products in detection systems for... [See More]
- Photodiode Material: Indium Gallium Arsenide; InGaAsSb, AlGaAsSb, GaSb
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 8.00E8 to 4.90E9
from RS Components, Ltd.
The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family of photodiodes... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Spectral Response Range: 900 to 1700
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 1550
from RS Components, Ltd.
The FCI-InGaAs-xxx series, from OSI Optoelectronics, are high speed InGaAs photodiodes. They are ideal for Datacom and Telecom applications. These high speed photodiodes offer low capacitance, low dark current and high responsivity, making them suitable for high bit rate receivers used in LAN, MAN,... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 900 to 1700
- Sensitivity: 0.9500
from RS Components, Ltd.
The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family of photodiodes... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 1100 to 1620
- Sensitivity: 0.9500
from RS Components, Ltd.
The FCI-InGaAs-xxx series, from OSI Optoelectronics, are high speed InGaAs photodiodes. They are ideal for Datacom and Telecom applications. These high speed photodiodes offer low capacitance, low dark current and high responsivity, making them suitable for high bit rate receivers used in LAN, MAN,... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 1550
- Spectral Response Range: 900 to 1700
- Photodiode Package: TO-46
from Marktech Optoelectronics
Photo Diode chip active area sizes from 0.1mm to 3.0mm are available to provide the optimum balance between low dark current, high speed and light sensitivity. This allows for increased flexibility and options in a variety of applications ranging from fiber optics and high speed optical... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: Visible
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 1300
from California Eastern Laboratories - CEL
The NR4510 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310 to 1550
from First Sensor AG
First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include both hermetic TO... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: Visible
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from OSI Optoelectronics
The LAPD 1550-200R is a 200 um InGaAs APD housed in a hermetic 3 pin TO46 Package. The low noise and high sensitivity of the LAPD 1550-200R APD makes it ideal for use in range finding, sensors, OTDRs and any other low light level detection application. Product Features. Low Noise. High Sensitivity. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 800 to 1700
from Excelitas Technologies Corp.
The Excelitas EXACTD ® platform is designed for use in Laser Warning Receiver Systems to detect and provide precise angle-of-arrival (AoA) information from direct and indirect scattered light from laser range finders, target designators, and active laser Electro-Optic (E.O.) systems. [See More]
- Photodiode Material: Silicon; Indium Gallium Arsenide
- Array: Array
- Spectral Response Range: 500 to 1650
- Number of Array Elements: 9
from California Eastern Laboratories - CEL
The NR6300 Series is an InGaAs APD in TO-CAN package designed for sub assemblies used in OTDR Test Equipment [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310 to 1550
from OSI Optoelectronics
FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to be flip chip mounted (active area facing up), or... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from Excelitas Technologies Corp.
The C30617BFCH is a high-speed InGaAs PIN Photodiode with a 100 µm active diameter chip in TO-18 ball lens package and FC receptacle. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 800 to 1700
from California Eastern Laboratories - CEL
The NR8300FP-CC is an InGaAs avalanche photo diode module in a coaxial package with single mode fiber, and can be used in OTDR systems. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310 to 1550
from OSI Optoelectronics
FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5 ° greatly reduces the back reflection. The chips can be... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1650
from Excelitas Technologies Corp.
The C30617BH is a high-speed InGaAs PIN Photodiode with a 100 µm active diameter chip in TO-18 ball lens package. This photodidoe provides high quantum efficiency from 800 nm to 1700 nm. It features low capacitance for extended bandwidth, as well as high resistance for high sensitivity, high... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 800 to 1700
from California Eastern Laboratories - CEL
The NR8360JP-BC is an InGaAs avalanche photodiode module in a 14-pin DIP package with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and optical test instruments, especially OTDR. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310 to 1550
from OSI Optoelectronics
FCI-InGaAs-XXX-CCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates with glass windows. These devices have a glass window attached to the ceramic where fibers can be epoxy or... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1650
from Excelitas Technologies Corp.
The C30619GH is a large-area InGaAs PIN photodiode with a 0.5 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low dark current, low capacitance for fast... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 800 to 1700
from California Eastern Laboratories - CEL
InGaAs APD In Coaxial Package For Fiber Optic Communication And OTDR Applications [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1310
from OSI Optoelectronics
FCI-InGaAs-XXX-LCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates. The chips can be epoxy/eutectic mounted onto the ceramic substrate. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from Excelitas Technologies Corp.
The C30645ECERH Large-Area InGaAs Avalanche Photodiode (APD) provides an 80 µm active diameter in ceramic submount carrier. Applications: Laser range finding, scanning and video imaging. Optical and free space communication. Scanning and video imaging. Optical and free space communication... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Active Area Diameter or Length: 0.0800
from OSI Optoelectronics
The LAPD 3080 is a 75 um InGaAs, mesa structure APD, housed in a hermetic 3 pin coaxial package. The APD is coupled to either a multimode or single mode fiber pigtail. The APD is of mesa type construction giving the device fast recovery times from optical overloads. The low noise, overload tolerant... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 800 to 1700
from Excelitas Technologies Corp.
The C30645EH Large-Area InGaAs Avalanche Photodiode provides an 80 µm active diameter in hermetic TO-18 package and small aperture silicon window. [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Active Area Diameter or Length: 0.0800
from OSI Optoelectronics
TheFCI-InGaAs-XX-XX-XX with active area of 70µm and 120µm are part of OSI Optoelectronics family of high speed IR sensitive detectors with fiber pigtail package. The single/multi-mode fiber is optically aligned to either the hermetically sealed InGaAs diode in TO-46 lens cap package enhancing the... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1650
from Excelitas Technologies Corp.
Excelitas is committed to keeping our troops safe and secure. We provide a portfolio of detectors and emitters that can satisfy a variety of laser range finding applications, from man-portable and fire control systems to unmanned air vehicles. Our wide range of emitters and detectors can satisfy... [See More]
- Photodiode Material: Silicon; Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Photodiode Package: Leaded; THT
from OSI Optoelectronics
FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. These large active area devices are ideal for use in... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from Excelitas Technologies Corp.
The LLAM-1550-R08BH is a high-speed, low-light analog avalanche photodiode (APD) receiver module with a 1550 nm InGaAs APD and features a thermoelectric cooler. Applications: Laser range finding. Target recognition. Distributed temperature sensing (DTS). Confocal microscopy. Analytical... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 1100 to 1700
from OSI Optoelectronics
FCI-H155/622M-InGaAs-70 series are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 900 to 1700
from OSI Optoelectronics
FCI-H125/250G-InGaAs-XX series are compact and integrated high speed InGaAs photodetector with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high speed signal amplification. High speed and... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1650
from OSI Optoelectronics
FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1mm and 3mm active area diameter. The InGaAs Quad series with high response uniformity and the low cross talk between the elements are ideal for accurate nulling or... [See More]
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1620