Silicon Photodiodes
Description
Silicon photodiodes are semiconductor devices that convert light into an electrical current. They are sensitive to a range of light wavelengths, including the visible light spectrum. These devices are widely used due to their ability to efficiently detect and measure light intensity.
Working Principle
Silicon photodiodes operate based on the principle of photon absorption. When photons with energy exceeding the band gap energy of silicon strike the photodiode, they are absorbed, generating electron-hole pairs. This process results in a current flow proportional to the light intensity. The efficiency of this conversion is nearly 100%, making silicon photodiodes highly effective for light detection. Their rapid response time, which can be as low as 1 nanosecond, further enhances their utility in various applications.
Applications
Silicon photodiodes are used in a variety of applications. They are integral to laser emission measurements, where their stability and precision are crucial. Additionally, they are employed in optical encoders, both absolute and incremental, due to their ability to accurately detect light changes. In industrial photo control applications, silicon photodiodes are favored for their cost-effectiveness and reliability.
Advantages over other Photodiodes
Silicon photodiodes offer several advantages over other types of photodiodes. They benefit from advanced processing technology, similar to that used in silicon transistors, which enhances their performance and reliability. Their sensitivity to visible light and nearly 100% quantum efficiency make them superior in applications requiring precise light detection.
Limitations
Despite their advantages, silicon photodiodes have limitations. Their responsivity can change with temperature, which may affect accuracy in varying environmental conditions. Additionally, there can be non-uniformity in responsivity across the device's active area, potentially impacting measurement consistency.
Considerations
When considering silicon photodiodes, several factors should be taken into account. Initial costs can vary depending on the specific application and required specifications. Operating expenses are generally low, but temperature-induced responsivity changes may necessitate additional calibration or compensation measures. Silicon photodiodes are durable and have a long operational life, with no known degradation mechanisms when used within their linear range. However, maintenance costs may arise from the need to address responsivity non-uniformity or temperature effects.
from Hamamatsu Photonics
Integrates photodiode for precision photometry with low-noise amp [Photosensitive area: 2.4 × 2.4 mm (Si), φ1 mm (InGaAs), built-in Two-color detector]. The C10439 series photodiode modules are high-precision photodetectors that integrate a photodiode and a current-to-voltage amplifi er. [See More]
- Photodiode Material: Silicon; Indium Gallium Arsenide
- Peak Sensitivity Wavelength: 940 to 2300
- Spectral Response Range: 320 to 2600
- Active Area Diameter or Length: 2.4
from Electro Optical Components, Inc.
Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features. Si-PIN photodiode. Spectral range 400 – 1100 nm. Hermetic sealed in TO-8 packages. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 400 to 1100
from RS Components, Ltd.
Si PIN Photodiode 320-1000nm Metal TO-18 [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 320 to 1000
from Hamamatsu Photonics
Highly reliable quadrant photodiode. for ArF excimer laser monitor. The S10359 is a quadrant Si photodiode that has achieved high reliability for ultraviolet light. It exhibits low sensitivity deterioration under UV light irradiation and is suitable for applications such as optical axis alignment or... [See More]
- Photodiode Material: Silicon
- Peak Sensitivity Wavelength: 760
- Spectral Response Range: 193 to 1000
- Array: Array
from Electro Optical Components, Inc.
EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier. Quadrant Photodiodes [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 400 to 1100
from RS Components, Ltd.
Si PIN Photodiode 320-1000nm Metal TO-18 [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 320 to 1000
from Hamamatsu Photonics
Dual-element, plastic package photodiode. The S3096-02 is a dual-element Si PIN photodiode molded into plastic package. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. Custom devices (with different element shapes, number of elements, characteristics... [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 320 to 1100
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 960
from RS Components, Ltd.
Si PIN Photodiode 320-1100nm Metal TO-5 [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 320 to 1100
from Hamamatsu Photonics
Dual-element, plastic package photodiode. The S4204 is a dual-element Si PIN photodiode molded into plastic packages. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. Custom devices (with different element shapes, number of elements, characteristics and... [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 320 to 1100
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 960
from RS Components, Ltd.
PIN Photodiode 350-1120nm 20deg 3mm [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1120
from Hamamatsu Photonics
Quadrant Si PIN photodiode. The S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: UV
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 190 to 1000
from RS Components, Ltd.
Photodiode PIN Chip 920nm TO-5 [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 400 to 1100
from Hamamatsu Photonics
Multi-element photodiode for surface mounting [See More]
- Photodiode Material: Silicon
- Peak Sensitivity Wavelength: 960
- Spectral Response Range: 320 to 1100
- Array: Array
from RS Components, Ltd.
PIN Photodiode 950nm 65deg Side-View [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 790 to 1050
from Hamamatsu Photonics
Multi-element photodiode for surface mounting [See More]
- Photodiode Material: Silicon
- Peak Sensitivity Wavelength: 960
- Spectral Response Range: 320 to 1100
- Array: Array
from RS Components, Ltd.
Photodiode PIN Chip 900nm 0.6A/W [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 600 to 1050
from Hamamatsu Photonics
Multi-element photodiode for surface mounting [See More]
- Photodiode Material: Silicon
- Peak Sensitivity Wavelength: 960
- Spectral Response Range: 320 to 1100
- Array: Array
from RS Components, Ltd.
IC, Fairchild, QSD2030F [See More]
- Photodiode Material: Silicon; Si
- Spectral Response Range: 700 to 1100
- Photodiode Spectral Response: IR
- Peak Sensitivity Wavelength: 880
from Hamamatsu Photonics
Dual-element photodiode using newly developed small, thin package. The S9345 is a dual-element Si PIN photodiode employing a newly developed small, thin plastic package. The cubic volume reduced to onefifth that of similar type photodiodes using conventional package. In order to extend the detection... [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 320 to 1100
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 960
from RS Components, Ltd.
ams OSRAM SFH 2201 Photodiode [See More]
- Photodiode Material: Silicon; Si
- Peak Sensitivity Wavelength: 940
- Spectral Response Range: 300 to 940
- Photodiode Package: Top led
from Hamamatsu Photonics
Surface mount type 16-element Si APD array. The S15249 is a surface mount type Si APD array with high sensitivity in the short wavelength range and low bias operation. This offers uniform gain and small crosstalk between elements. Features. -High sensitivity in the short wavelength range. QE=77% (... [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 350 to 1000
- Photodiode Type: Avalanche Photodiode
- Peak Sensitivity Wavelength: 620
from RS Components, Ltd.
PIN Photodiode [See More]
- Photodiode Material: Silicon; Si
- Spectral Response Range: 300 to 940
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 940
from Hamamatsu Photonics
4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity. The S8550-02 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk between each... [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 320 to 1000
- Photodiode Type: Avalanche Photodiode
- Peak Sensitivity Wavelength: 600
from RS Components, Ltd.
PIN Photodiode 1.8uA 350-1070nm SMD 0805 [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350
from Hamamatsu Photonics
Low bias operation, for 800 nm band. This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 400 to 1000
from RS Components, Ltd.
PIN Photodiode 48uA 430-1070nm QFN [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 430
from Hamamatsu Photonics
Low bias operation, for 800 nm band. This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 400 to 1000
from RS Components, Ltd.
PIN Photodiode 26uA 350-1070nm QFN [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350
from Hamamatsu Photonics
Low bias operation, for 800 nm band. This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 400 to 1000
from RS Components, Ltd.
PIN Photodiode 1.8uA 350-1070nm SMD 0805 [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350
from Hamamatsu Photonics
Low bias operation, for 800 nm band. This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 400 to 1000
from RS Components, Ltd.
PIN Photodiode 48uA 430-1070nm QFN [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 430
from Hamamatsu Photonics
Low bias operation, for 800 nm band. This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 400 to 1000
from RS Components, Ltd.
PIN Photodiode 26uA 350-1070nm QFN [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350
from Hamamatsu Photonics
Short wavelength type APD [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 200 to 1000
- Photodiode Type: Avalanche Photodiode
- Peak Sensitivity Wavelength: 620
from RS Components, Ltd.
IR Photodiode PIN 900nm [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 430 to 1100
from Hamamatsu Photonics
Short wavelength type APD [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 200 to 1000
- Photodiode Type: Avalanche Photodiode
- Peak Sensitivity Wavelength: 620
from RS Components, Ltd.
IR Photodiode PIN 940nm 0.6A/W [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 790 to 1050
from Hamamatsu Photonics
Short wavelength type APD [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 200 to 1000
- Photodiode Type: Avalanche Photodiode
- Peak Sensitivity Wavelength: 620
from RS Components, Ltd.
IR Photodiode PIN 940nm 0.55A/W [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 790 to 1050
from Hamamatsu Photonics
Low bias operation, for 800 nm band. This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 400 to 1000
from RS Components, Ltd.
Photodiode PIN Chip 900nm [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 430 to 1100
from Hamamatsu Photonics
High sensitivity in near infrared range ( λ=900 nm). This is a Si APD that offer enhanced 900 nm band near-infrared sensitivity. This is a suitable for applications such as optical rangefinders and FSO (free space optics). [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 440 to 1100
from RS Components, Ltd.
Photodiode PIN Chip 950nm [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 750 to 1050
from Hamamatsu Photonics
High sensitivity in near infrared range ( λ=900 nm). This is a Si APD that offer enhanced 900 nm band near-infrared sensitivity. This is a suitable for applications such as optical rangefinders and FSO (free space optics). [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 440 to 1100
from RS Components, Ltd.
PIN Photodiode 870/950nm SMD2 GW [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 780 to 1050
from Hamamatsu Photonics
Low bias, high-speed Si APD for 900 nm. The S12426 series Si APD are designed to provide a peak sensitivity wavelength in the 900 nm band where optical rangefinders are increasingly used. The S12426 series delivers faster response and lower bias operation than our existing Si APD (S9251 series). [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 400 to 1100
- Photodiode Type: Avalanche Photodiode
- Peak Sensitivity Wavelength: 840
from RS Components, Ltd.
PIN Photodiode 780-1050nm SMD2 RGW [See More]
- Photodiode Material: Silicon; Si
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 780 to 1050
from Hamamatsu Photonics
Low bias, high-speed Si APD for 900 nm. The S12426 series Si APD are designed to provide a peak sensitivity wavelength in the 900 nm band where optical rangefinders are increasingly used. The S12426 series delivers faster response and lower bias operation than our existing Si APD (S9251 series). [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 400 to 1100
- Photodiode Type: Avalanche Photodiode
- Peak Sensitivity Wavelength: 840
from Hamamatsu Photonics
High-sensitivity Si APD for detection of light with a wavelength of 266 nm. The S14124-20 is an improved Si APD from the S8664 series for high sensitive detection of light with a wavelength of 266 nm used in semiconductor inspection and laser processing equipment. We have achieved a quantum... [See More]
- Photodiode Material: Silicon
- Peak Sensitivity Wavelength: 600
- Photodiode Type: Avalanche Photodiode
- Active Area Diameter or Length: 2
from Marktech Optoelectronics
Marktech offers a broad line of silicon photo diodes in a variety of package types ranging from through-hole plastic and metal-can to surface mount. These devices are available with standard silicon die having a spectral sensitivity of approximately 400nm - 1100nm or with special UV enhanced silicon... [See More]
- Photodiode Material: Silicon
- Peak Sensitivity Wavelength: 940
- Photodiode Spectral Response: Visible
- Active Area Diameter or Length: 1.21
from Quantum Devices, Inc.
Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this response can... [See More]
- Photodiode Material: Silicon
- Photodiode Type: PN Photodiode
from MOXTEK, Inc.
The XPIN ® detector is Moxtek ’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium ® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
- Photodiode Type: PIN Photodiode
from PREMA Semiconductor GmbH
With minimal size, the PR5001 is a dual photo diode with a wideband spectral sensitivity (450-950 nm) with peak at 800 nm. An active area of two times 0.75 mm x 1.2 mm is packaged in a small transparent DFN package with a size of only 1.8 mm x 2.9 mm. The silicon photo diodes have separate cathodes... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PN Photodiode
- Spectral Response Range: 500 to 1000
from OSI Optoelectronics
This series consists of 16- element arrays: the individual elements are grouped together and mounted on PCB. For X-Ray or Gamma-ray application, these multi-channel detectors offer scintillator-mounting options: BGO, CdWO4 or CsI(TI). BGO (Bismuth Germinate) acts as an ideal absorber: it is widely... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray; Visible
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features. Maximum sensitivity at 800 nm. Optimized for high speeds. Low temperature coefficient. Fast rise time. Potentially low... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 650 to 850
from Micropac Industries, Inc.
The 61010 is an N-P-N Planar Silicon Photodarlington Transistor in a small outline package designed to be housing mounted. Its large effective aperture and narrow angular response make this a highly sensitive device with minimum response to off-axis or stray light. This sensor is also available with... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: UV; Visible; IR
- Photodiode Type: PN Photodiode; PIN Photodiode (optional feature)
- Spectral Response Range: 290 to 1200
from MOXTEK, Inc.
The XPIN ® detector is Moxtek ’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium ® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
- Photodiode Type: PIN Photodiode
from PREMA Semiconductor GmbH
Two Triangular shaped Silicon Junctions. PR5030 is a dual silicon photodiode with two separate cathodes and one common anode. Each photodiode has a triangular shape to form an interface along the diagonal of the die. Therefore, the two segments allow to resolve a position of a slit or an edge above. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PN Photodiode
- Peak Sensitivity Wavelength: 830
from OSI Optoelectronics
The BI-SMT product series are single channel back-illuminated photodiodes specifically designed to minimize 'dead' areas at the edge of the device. Each device is designed on a package with dimensions very similar to the chip itself. This design allows for multiple detectors to be arranged in a... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 540 to 920
from First Sensor AG
These avalanche photodiodes were developed specifically for LIDAR applications and laser rangefinders. The series of products contains linear and matrix arrays with multiple sensors on one monolithic die, e.g. 8, 16, 64 pixels. Special features. Fast rise time in 900 nm range. Low gain slope above... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 850 to 1070
from PREMA Semiconductor GmbH
Dual-Photodiode with a common Cathode. PR5010 is a double silicon photodiode with two symmetrical anodes and a common cathode, sensitive for visible light. The cathode forms an additional photodiode to the substrate that is sensitive for infrared light. Key features are the low dark current combined... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PN Photodiode
- Peak Sensitivity Wavelength: 630
from OSI Optoelectronics
The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: UV; Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm. High sensitivity. Low noise. High speed. Optimized for longer wavelengths [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 850 to 1064
from PREMA Semiconductor GmbH
Two differential pairs of photodiodes with amplifiers. The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair. APPLICATIONS. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PN Photodiode
- Spectral Response Range: 950
from OSI Optoelectronics
The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: UV; Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range. Low gain slope... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 750 to 930
from PREMA Semiconductor GmbH
Single Photodiode with identical Outer Dimensions. PR5040 is a single silicon photodiode with rectangular shape having the same outer dimensions as the segmented types PR5001-PR5030. The photodiode has a low dark current combined with a high sensitivity. The dies are moulded into a small plastic... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PN Photodiode
- Photodiode Package: SMT
from OSI Optoelectronics
The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: UV; Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
PIN photodiodes with enhanced sensitivity in blue and green spectral range. Features: Low capacitance. Very low dark current. Long-term stability of detection properties [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 400 to 650
from PREMA Semiconductor GmbH
3 compact Silicon Junctions on a single Die. PR5020 and PR50221 are triple silicon photodiodes with three separate cathodes and one common anode. Therefore, the three segments allow to resolve two transitions. With a wider and thinner photodiode in the center of the die, the PR5020 and the PR5021... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PN Photodiode
- Peak Sensitivity Wavelength: 830
from OSI Optoelectronics
The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: UV; Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
Alpha, beta, gamma, and X-ray radiation can be detected with silicon PIN photodiodes either directly via the absorption in the crystal lattice or indirectly via the measurement of the luminescence radiation of a scintillation crystal. The Series X from First Sensor features optimized silicon PIN... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
- Photodiode Type: PIN Photodiode
- Active Area Diameter or Length: 10
from OSI Optoelectronics
The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed LASER sources, LEDs, or... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
These high-speed epitaxial photodiodes are ideal for VIS and NIR applications with low operating voltages. Features: Photodiodes with epitaxial layer structure for fast rise times at low reverse voltages. Epitaxial layer thickness optimized for highest speed and maximum sensitivity at 800 nm. Low... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 400 to 950
from OSI Optoelectronics
The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed LASER sources, LEDs, or... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
High-performance PIN photodiodes for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection. Features: PIN photodiodes optimized for photovoltaic and photoconductive use. Very low dark current. High shunt resistance. Long charge carrier life time. High... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 700 to 950
from OSI Optoelectronics
The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed LASER sources, LEDs, or... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
These components utilize the effect of the lateral division of the generated photocurrent. The term "position sensitive detector" (PSD) refers to a component that is based on silicon PIN diode technology and is used to measure the position of the integral focus of an incoming light signal. A light... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 700 to 1000
from OSI Optoelectronics
The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed LASER sources, LEDs, or... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
Quadrant photodiodes are discrete components that usually feature four optically active areas separated by a small gap. These photodiodes are used in many applications for detecting the position of laser beams, collimators and other applications to facilitate adjustment. Features: Small gap areas. [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1064
from OSI Optoelectronics
The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such AC applications as detection of pulsed LASER sources, LEDs, or... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from First Sensor AG
Wavelength-sensitive photodiodes utilize the effect of the wavelength-specific absorption depth of radiation in silicon. For this purpose, two p-n junctions are aligned vertically in the silicon crystal, thus enabling separate signal detection within vertically adjacent ranges. Such a configuration... [See More]
- Photodiode Material: Silicon
- Spectral Response Range: 450 to 950
- Photodiode Type: PIN Photodiode
- Rise Time: 10000
from OSI Optoelectronics
The Super Linear Position Sensors feature state of the art duo-lateral technology to provide a continuous analog output proportional to the displacement of the centroid of a light spot from the center, on the active area. As continuous position sensors, these detectors are unparalleled; offering... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from OSI Optoelectronics
OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the UV region of electromagnetic spectrum. Inversion layer structure UV enhanced... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: UV
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 200 to 750
from OSI Optoelectronics
The UDT-4X4D is a 4 by 4 array of super blue enhanced Photodetectors. Our proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include Ratio and Scattering... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: UV; Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from OSI Optoelectronics
Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low electrical cross... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: UV; Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 200 to 1100
from OSI Optoelectronics
The YAG Series of photo detectors are optimized for high response at 1060 nm, the YAG laser light wavelength, and low capacitance, for high speed operation and low noise. These detectors can be used for sensing low light intensities, such as the light reflected from objects illuminated by a YAG... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from OSI Optoelectronics
OSI Optoelectronics' family of large active area and high speed silicon detector series are designed to reliably support short-haul data communications applications. All exhibit low dark current and low capacitance at 3.3V bias. The base unit comes in a 3 pin TO-46 package with micro lens cap or AR... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 1100 to 1650
from OSI Optoelectronics
The dual LED series consists of a 660nm (red) LED and a companion IR LED such as 880 / 895, 905, or 940nm. They are widely used for ratio metric measurements such as medical analytical and monitoring devices. They can also be used in applications requiring a low cost Bi-Wavelength light source. Two... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from OSI Optoelectronics
The Photop ™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from OSI Optoelectronics
The SPOT Series are common substrate photodetectors segmented into either two (2) or four (4) separate active areas. They are available with either a 0.005" or 0.004" well defined gap between the adjacent elements resulting in high response uniformity between the elements. The SPOT series are ideal... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from OSI Optoelectronics
Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available with flat windows or... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: Avalanche Photodiode
- Spectral Response Range: 350 to 1100
from OSI Optoelectronics
The Solderable photodiode chip series offer a low cost approach to applications requiring large active area photodetectors with or without flying leads for ease of assembly and / or situations where the detector is considered "disposable". They have low capacitance, moderate dark currents, wide... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from OSI Optoelectronics
Tetra-lateral position sensing detectors are manufactured with one single resistive layer for both one and two dimensional measurements. They feature a common anode and two cathodes for one dimensional position sensing or four cathodes for two dimensional position sensing. These detectors are best... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: Visible; IR
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 350 to 1100
from OSI Optoelectronics
The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in Nano seconds. The high... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
- Photodiode Type: PIN Photodiode
- Peak Sensitivity Wavelength: 830
from OSI Optoelectronics
OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity from 200 nm to... [See More]
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray; UV
- Photodiode Type: PIN Photodiode
- Spectral Response Range: 200 to 1100