H-Bridge Semiconductor Power Modules
from Semikron, Inc.
Highest Power Output and Efficiency. SEMIKRON offers Full Silicon Carbide Power Modules in MiniSKiiP, SEMITOP and SEMITRANS housings. By using SiC MOSFETs of the leading suppliers highest output power and power densities are reached in combination with high switching frequencies, lowest losses and... [See More]
- Configuration: Half-Bridge; H-Bridge; Six-Pack
- Output Voltage: 1200 to 1700
- Technology: SiC
- Output Current: 18 to 478
from Vincotech GmbH
Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High efficiency in hard switching and resonant topologies. High speed switching. Low gate charge. Clip-in, reliable mechanical connection, qualified for wave soldering. Convex... [See More]
- Configuration: H-Bridge
- Output Voltage: 650
- Technology: IGBT; IGBT H5
- Output Current: 30
from Vincotech GmbH
Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High efficiency in hard switching and resonant topologies. High speed switching. Low gate charge. Convex shaped substrate for superior thermal contact. Thermo-mechanical... [See More]
- Configuration: H-Bridge
- Output Voltage: 650
- Technology: IGBT; IGBT H5
- Output Current: 75
from Vincotech GmbH
Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High efficiency in hard switching and resonant topologies. High speed switching. Low gate charge. Clip-in, reliable mechanical connection, qualified for wave soldering. Convex... [See More]
- Configuration: H-Bridge
- Output Voltage: 650
- Technology: IGBT; IGBT H5
- Output Current: 30
from Vincotech GmbH
Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High efficiency in hard switching and resonant topologies. High speed switching. Low gate charge. Convex shaped substrate for superior thermal contact. Thermo-mechanical... [See More]
- Configuration: H-Bridge
- Output Voltage: 650
- Technology: IGBT; IGBT H5
- Output Current: 75
from Vincotech GmbH
Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High efficiency in hard switching and resonant topologies. High speed switching. Low gate charge. Convex shaped substrate for superior thermal contact. Thermo-mechanical... [See More]
- Configuration: H-Bridge
- Output Voltage: 650
- Technology: IGBT; IGBT H5
- Output Current: 75
from Vincotech GmbH
Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High efficiency in hard switching and resonant topologies. High speed switching. Low gate charge. Clip-in, reliable mechanical connection, qualified for wave soldering. Convex... [See More]
- Configuration: H-Bridge
- Output Voltage: 650
- Technology: IGBT; IGBT H5
- Output Current: 30
from Vincotech GmbH
fsw < 50 kHz. Kelvin Emitter for improved switching performance. Temperature sensor. Easy paralleling. High speed switching. Low switching losses. Clip-in, reliable mechanical connection, qualified for wave soldering. Convex shaped substrate for superior thermal contact. Thermo-mechanical... [See More]
- Configuration: H-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT4 HS
- Output Current: 15
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Integrated DC capacitor. Open Emitter configuration. Temperature sensor. Fast and controllable fall and rise times. GaN enhancement mode power switch. Zero reverse recovery Qrr. Convex shaped substrate for superior thermal contact. Thermo-mechanical... [See More]
- Configuration: H-Bridge
- Output Voltage: 650
- Technology: GaN E-Mode
- Output Current: 95
from Vincotech GmbH
fsw > 30 kHz. Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High efficiency in hard switching and resonant topologies. High speed switching. Low gate charge. Convex shaped substrate for superior thermal contact. [See More]
- Configuration: H-Bridge
- Output Voltage: 650
- Technology: IGBT; IGBT H5
- Output Current: 100
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. Easy paralleling. High speed switching. Low switching losses. Convex shaped substrate for superior thermal contact. Thermo-mechanical push-and-pull force relief. Solder pin [See More]
- Configuration: H-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT4 HS
- Output Current: 40
from Vincotech GmbH
fsw > 30 kHz. Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High efficiency in hard switching and resonant topologies. High speed switching. Low gate charge. Convex shaped substrate for superior thermal contact. [See More]
- Configuration: H-Bridge
- Output Voltage: 650
- Technology: IGBT; IGBT H5
- Output Current: 100
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. Easy paralleling. High speed switching. Low switching losses. Convex shaped substrate for superior thermal contact. Thermo-mechanical push-and-pull force relief. Press-fit pin. Reliable cold welding... [See More]
- Configuration: H-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT4 HS
- Output Current: 40
from Vincotech GmbH
Equivalent: F4-17MR12W1M1HP_B76. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal... [See More]
- Configuration: H-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 70
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Temperature sensor. Easy paralleling. Low on-resistance. Fast switching speed. Fast recovery body diode. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical push-and-pull force relief. [See More]
- Configuration: H-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 50
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600... [See More]
- Configuration: H-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 70
from Vincotech GmbH
Equivalent: F4-11MR12W2M1HP_B76. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal... [See More]
- Configuration: H-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 120
from Vincotech GmbH
AlN Substrate for enhanced thermal performance. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for... [See More]
- Configuration: H-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 80