Half-Bridge Semiconductor Power Modules
from Infineon Technologies AG
CIPOS ™ Nano 100 V, 0.02 Ω half-bridge intelligent power module. CIPOS ™ Nano 100 V, 0.02 Ω half-bridge MOSFET based intelligent power module providing ultra compact, half-bridge topology solution through a rugged IC in a small QFN package for small home appliances, low power... [See More]
- Configuration: Half-Bridge; Half-Bridge
- Package: QFN 7x8
- Technology: Intelligent Power Module (IPM)
- Input Current: 30
from Fuji Electric Corp. of America
The 2-Pack incorporates a half-bridge circuit.We have a product lineup compatible with a wide range of converter capacities such as those needed for UPS, general-purpose inverters, electric railroads, and mega solar. High reliability is required for infrastructure applications, and the High Power... [See More]
- Configuration: Half-Bridge
- Package: M254
- Technology: IGBT
- Output Voltage: 1200
from Infineon Technologies AG
CIPOS ™ Nano 500 V, 1.7 Ω half-bridge intelligent power module. CIPOS ™ Nano 500 V, 1.7 Ω half-bridge MOSFET based intelligent power module in QFN 8x9 package providing ultra compact, half-bridge topology solution through a rugged IC in the small QFN package for small home... [See More]
- Configuration: Half-Bridge; Half-Bridge
- Package: QFN 8x9
- Technology: Intelligent Power Module (IPM)
- Input Current: 4
from Semikron, Inc.
Highest Power Output and Efficiency. SEMIKRON offers Full Silicon Carbide Power Modules in MiniSKiiP, SEMITOP and SEMITRANS housings. By using SiC MOSFETs of the leading suppliers highest output power and power densities are reached in combination with high switching frequencies, lowest losses and... [See More]
- Configuration: Half-Bridge; H-Bridge; Six-Pack
- Output Voltage: 1200 to 1700
- Technology: SiC
- Output Current: 18 to 478
from Vincotech GmbH
Common emitter point Half Bridge. Temperature sensor. Easy paralleling. Low turn-off losses. Low collector emitter saturation voltage. Positive temperature coefficient. Short tail current. Switching optimized for EMC. Convex shaped substrate for superior thermal contact. Compact housing. CTI600... [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT M7
- Output Current: 50
from Vincotech GmbH
Temperature sensor. Half Bridge. Fast intrinsic diode with low reverse recovery. High blocking voltage with low on-resistance. High speed switching with low capacitance. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical push-and-pull... [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 140
from Vincotech GmbH
Temperature sensor. Half Bridge. Fast intrinsic diode with low reverse recovery. High blocking voltage with low on-resistance. High speed switching with low capacitance. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical push-and-pull... [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 110
from Vincotech GmbH
Equivalent: IFX FF45MR12W1M1_B11. Temperature sensor. Half Bridge. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 50
from Vincotech GmbH
Temperature sensor. Half Bridge. Fast intrinsic diode with low reverse recovery. High blocking voltage with low on-resistance. High speed switching with low capacitance. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical push-and-pull... [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 330
from Vincotech GmbH
AlN Substrate. Equivalent: FF6MR12W2M1H_B70. Temperature sensor. Half Bridge. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 200
from Vincotech GmbH
4x Half Bridge. 4x Phase Output. Common DC. Kelvin Emitter for improved switching performance. Temperature sensor. Easy paralleling. Low on-resistance. Fast switching speed. Fast recovery body diode. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 130
from Vincotech GmbH
Common emitter point Half Bridge. SiC MOSFET. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 510
from Vincotech GmbH
Gate Resistor. Half Bridge. Temperature sensor. Fast intrinsic diode with low reverse recovery. High blocking voltage with low on-resistance. High speed switching with low capacitance. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical... [See More]
- Configuration: Half-Bridge
- Output Voltage: 2300
- Technology: SiC; SiC MOSFET
- Output Current: 200
from Vincotech GmbH
Equivalent: FF2MR12W3M1H_B11. Kelvin Emitter for improved switching performance. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. CTI600 housing material. Compact, baseplate-less housing. VINcoPress... [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: SiC; SiC MOSFET
- Output Current: 600
from Vincotech GmbH
Temperature sensor. Half Bridge. Fast intrinsic diode with low reverse recovery. High blocking voltage with low on-resistance. High speed switching with low capacitance. Cu baseplate. Convex shaped baseplate for superior thermal contact. CTI600 housing material. Baseplate with rough surface. [See More]
- Configuration: Half-Bridge
- Output Voltage: 2300
- Technology: SiC; SiC MOSFET
- Output Current: 400
from Vincotech GmbH
Half Bridge. Temperature sensor. Easy paralleling. Low turn-off losses. Low collector emitter saturation voltage. Positive temperature coefficient. Short tail current. Clip-in, reliable mechanical connection, qualified for wave soldering. Convex shaped substrate for superior thermal contact. [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT4
- Output Current: 100
from Vincotech GmbH
Half Bridge. Temperature sensor. Easy paralleling. Low turn-off losses. Low collector emitter saturation voltage. Positive temperature coefficient. Short tail current. Clip-in, reliable mechanical connection, qualified for wave soldering. Convex shaped substrate for superior thermal contact. [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT4
- Output Current: 50
from Vincotech GmbH
Half Bridge. Temperature sensor. Easy paralleling. Low turn-off losses. Low collector emitter saturation voltage. Positive temperature coefficient. Short tail current. Clip-in, reliable mechanical connection, qualified for wave soldering. Convex shaped substrate for superior thermal contact. [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT4
- Output Current: 100
from Vincotech GmbH
Half Bridge. Temperature sensor. Easy paralleling. Low turn-off losses. Low collector emitter saturation voltage. Positive temperature coefficient. Short tail current. Clip-in, reliable mechanical connection, qualified for wave soldering. Convex shaped substrate for superior thermal contact. [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT4
- Output Current: 100
from Vincotech GmbH
Equivalent: SKiiP 24GB12T4V1 / SKiiP 24GB12T7V1. Half Bridge. Temperature sensor. Easy paralleling. Low turn-off losses. Low collector emitter saturation voltage. Positive temperature coefficient. Short tail current. Switching optimized for EMC. Easy assembly in one mounting step. Flexible PCB... [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT M7
- Output Current: 150
from Vincotech GmbH
Equivalent: SKiiP 38GB12E4V1 / SKiiP 38GB12T7V1. Half Bridge. Temperature sensor. Easy paralleling. Low turn-off losses. Low collector emitter saturation voltage. Positive temperature coefficient. Short tail current. Switching optimized for EMC. Easy assembly in one mounting step. Flexible PCB... [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT M7
- Output Current: 300
from Vincotech GmbH
Temperature sensor. Half Bridge. Easy paralleling. Low turn-off losses. Low collector emitter saturation voltage. Positive temperature coefficient. Short tail current. Switching optimized for EMC. SoLid Cover Technology. Standard mid-power industry package. Driver pins are avaliable in press-fit and... [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT M7
- Output Current: 200
from Vincotech GmbH
Temperature sensor. Half Bridge. Easy paralleling. Low turn-off losses. Low collector emitter saturation voltage. Positive temperature coefficient. Short tail current. Switching optimized for EMC. SoLid Cover Technology. Standard mid-power industry package. Driver pins are avaliable in press-fit and... [See More]
- Configuration: Half-Bridge
- Output Voltage: 1200
- Technology: IGBT; IGBT M7
- Output Current: 200