SiC Semiconductor Power Modules
from Fuji Electric Corp. of America
SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation, and high-temperature operation. Power semiconductors that make use of SiC achieve a significant reduction in energy consumption, and can be used to develop smaller and... [See More]
- Technology: SiC
- Input Voltage: 1.8
- Package: TO-220F-2
- Input Current: 10
from Vincotech GmbH
Dual halfbridge. Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. Fast intrinsic diode with low reverse recovery. High blocking voltage with low on-resistance. High speed switching with low capacitance. Convex shaped... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: H-Bridge
- Output Current: 55
from Microchip Technology, Inc.
MOSFETs. Low RDSon. Low input and Miller capacitance. Low gate charge. Avalanche energy rated. Very rugged. Kelvin source for easy drive. Low stray inductance. Outstanding performance at high frequency operation. Direct mounting to heatsink (isolated package). Internal thermistor for temperature... [See More]
- Technology: MOSFET; SiC
- Output Voltage: 1000
- Configuration: Full Bridge
- Output Current: 14
from Semikron, Inc.
Highest Power Output and Efficiency. SEMIKRON offers Full Silicon Carbide Power Modules in MiniSKiiP, SEMITOP and SEMITRANS housings. By using SiC MOSFETs of the leading suppliers highest output power and power densities are reached in combination with high switching frequencies, lowest losses and... [See More]
- Technology: SiC
- Output Voltage: 1200 to 1700
- Configuration: Half-Bridge; H-Bridge; Six-Pack
- Output Current: 18 to 478
from Vincotech GmbH
Dual halfbridge. Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Clip-in, reliable mechanical... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: H-Bridge
- Output Current: 40
from Microchip Technology, Inc.
#8226; SiC Power MOSFET. - Low RDS(on). - High temperature performance. • Kelvin source for easy drive. • Low stray inductance. • Internal thermistor for temperature monitoring (optional). • High efficiency converter. • Outstanding performance at high frequency... [See More]
- Technology: MOSFET; SiC
- Output Current: 584
- Output Voltage: 1200
from Vincotech GmbH
Equivalent: F4-17MR12W1M1HP_B76. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: H-Bridge
- Output Current: 70
from Microchip Technology, Inc.
SiC Power MOSFET. Low RDS(on). High temperature performance. Kelvin source for easy drive. Low stray inductance. Internal thermistor for temperature monitoring (optional). High efficiency converter. Outstanding performance at high frequency operation. Stable temperature behavior. Direct mounting to... [See More]
- Technology: MOSFET; SiC
- Output Current: 584
- Output Voltage: 1200
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Temperature sensor. Easy paralleling. Low on-resistance. Fast switching speed. Fast recovery body diode. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical push-and-pull force relief. [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: H-Bridge
- Output Current: 50
from Microchip Technology, Inc.
SiC Power MOSFET. Low RDS(on). High temperature performance. Kelvin source for easy drive. Low stray inductance. Internal thermistor for temperature monitoring (optional). High efficiency converter. Outstanding performance at high frequency operation. Stable temperature behavior. Direct mounting to... [See More]
- Technology: MOSFET; SiC
- Output Current: 754
- Output Voltage: 1200
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: H-Bridge
- Output Current: 70
from Microchip Technology, Inc.
SiC Power MOSFET. Low RDS(on). High temperature performance. Kelvin source for easy drive. Low stray inductance. Internal thermistor for temperature monitoring (optional). High efficiency converter. Outstanding performance at high frequency operation. Stable temperature behavior. Direct mounting to... [See More]
- Technology: MOSFET; SiC
- Output Current: 268
- Output Voltage: 1200
from Vincotech GmbH
Equivalent: F4-11MR12W2M1HP_B76. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: H-Bridge
- Output Current: 120
from Microchip Technology, Inc.
SiC Power MOSFET. Low RDS(on). High temperature performance. Kelvin source for easy drive. Low stray inductance. Internal thermistor for temperature monitoring (optional). High efficiency converter. Outstanding performance at high frequency operation. Stable temperature behavior. Direct mounting to... [See More]
- Technology: SiC
- Output Voltage: 1200
- Configuration: Full Bridge
from Vincotech GmbH
AlN Substrate for enhanced thermal performance. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: H-Bridge
- Output Current: 80
from Vincotech GmbH
3xNeutral Boost PFC. On-board Capacitors. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 650
- Configuration: Power Factor Correction (PFC)
- Output Current: 50
from Vincotech GmbH
3xNeutral Boost PFC. On-board Capacitors. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 650
- Configuration: Power Factor Correction (PFC)
- Output Current: 30
from Vincotech GmbH
3xNeutral Boost PFC. On-board Capacitors. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 650
- Configuration: Power Factor Correction (PFC)
- Output Current: 30
from Vincotech GmbH
Temperature sensor. Advanced Neutral Point Clamped topology. Split output for improved switching performance. Split topology. Easy paralleling. Low on-resistance. Fast switching speed. Fast recovery body diode. Convex shaped substrate for superior thermal contact. Thermo-mechanical push-and-pull... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Three-level ANPC
- Output Current: 150
from Vincotech GmbH
Temperature sensor. Advanced Neutral Point Clamped topology. Split output for improved switching performance. Split topology. Easy paralleling. Low on-resistance. Fast switching speed. Fast recovery body diode. Convex shaped substrate for superior thermal contact. Thermo-mechanical push-and-pull... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Three-level ANPC
- Output Current: 150
from Vincotech GmbH
Advanced Neutral Point Clamped topology. IGBT. Kelvin Emitter for improved switching performance. MOSFET. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. CTI600 housing material. Compact, baseplate-less... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Three-level ANPC
- Output Current: 300
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Temperature sensor. Advanced Neutral Point Clamped topology. MOSFET. IGBT. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. CTI600 housing material. Compact, baseplate-less... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Three-level ANPC
- Output Current: 160
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Dual Booster. Bypass Diode. Open Emitter configuration. Temperature sensor. Easy paralleling. Low on-resistance. Fast switching speed. Fast recovery body diode. Clip-in, reliable mechanical connection, qualified for wave soldering. Convex shaped... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Booster
- Output Current: 20
from Vincotech GmbH
Kelvin Emitter for improved switching performance. Dual Booster. Bypass Diode. Integrated DC capacitor. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Booster
- Output Current: 35
from Vincotech GmbH
Dual Booster. Integrated DC capacitor. Kelvin Emitter for improved switching performance. Open Emitter configuration. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Booster
- Output Current: 100
from Vincotech GmbH
Current Synthesizing PFC + Booster. Integrated DC Link capacitors. Kelvin Emitter for improved switching performance. Temperature sensor. Thin Al2O3 for easy thermal design. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Power Factor Correction (PFC)
- Output Current: 80
from Vincotech GmbH
Temperature sensor. Half Bridge. Fast intrinsic diode with low reverse recovery. High blocking voltage with low on-resistance. High speed switching with low capacitance. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical push-and-pull... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Half-Bridge
- Output Current: 140
from Vincotech GmbH
Temperature sensor. Half Bridge. Fast intrinsic diode with low reverse recovery. High blocking voltage with low on-resistance. High speed switching with low capacitance. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical push-and-pull... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Half-Bridge
- Output Current: 110
from Vincotech GmbH
Equivalent: IFX FF45MR12W1M1_B11. Temperature sensor. Half Bridge. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Half-Bridge
- Output Current: 50
from Vincotech GmbH
Temperature sensor. Half Bridge. Fast intrinsic diode with low reverse recovery. High blocking voltage with low on-resistance. High speed switching with low capacitance. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. Thermo-mechanical push-and-pull... [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Half-Bridge
- Output Current: 330
from Vincotech GmbH
AlN Substrate. Equivalent: FF6MR12W2M1H_B70. Temperature sensor. Half Bridge. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Half-Bridge
- Output Current: 200
from Vincotech GmbH
4x Half Bridge. 4x Phase Output. Common DC. Kelvin Emitter for improved switching performance. Temperature sensor. Easy paralleling. Low on-resistance. Fast switching speed. Fast recovery body diode. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Half-Bridge
- Output Current: 130
from Vincotech GmbH
Common emitter point Half Bridge. SiC MOSFET. Temperature sensor. High Blocking Voltage with low drain source on state resistance. High speed SiC-MOSFET technology. Resistant to Latch-up. Convex shaped substrate for superior thermal contact. Compact housing. CTI600 housing material. [See More]
- Technology: SiC; SiC MOSFET
- Output Voltage: 1200
- Configuration: Half-Bridge
- Output Current: 510