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Supplier: ERSAELECTRONICS PTE. LTD.
Description: FET RF HEMT 28V 100MA 440203 Product overview: CGH40006S-AMP1 from MACOM Technology Solutions is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower spiking 267 Amps ID(max) continuous current rating Low QG × RDSon FOM for high
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 100 Amps 250V 0.027 Rds
- Features: MOSFET
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Supplier: Allied Electronics, Inc.
Description: N-Channel Enhancement Mode MOSFET, 28 Amps, 150 Watts, -55 to +175°C Dynamic dv⁄dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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Supplier: Nexperia B.V.
Description: NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower spiking 355 Amps ID(max) continuous current rating Low QG × RDSon FOM
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower spiking 460 Amps ID(max) continuous current rating Low QG × RDSon FOM
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower spiking 460 Amps ID(max) continuous current rating Low QG × RDSon FOM
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
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Supplier: ODG (Origin Data Global)
Description: POWER MOSFET 203 AMPS, 100 VOLTS
- V(BR)DSS: 100 volts
- IDSS: 21,000 milliamps
- PD: 3,700 milliwatts
- TJ: -55 to 175 C
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Description: POWER MOSFET 203 AMPS, 100 VOLTS
- V(BR)DSS: 100 volts
- IDSS: 21,000 to 203,000 milliamps
- Features: MOSFET, Other
- Package Type: TO-263
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Supplier: Visual Sound, Inc.
Description: Bogen Communications, Inc. The Bogen HTA250A Power Amplifier is a high performance unit employing Power MOSFET technology. The unique characteristics of Power MOSFETS make them ideally suited to power amplifier design, providing far superior performance and
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1345941-MMRF2010NR1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs Package: Tape & Reel Standard Package: 500 Voltage - Rated: 100 V Technology: LDMOS Frequency: 1.09GHz Current - Test: 80 mA Gain: 32.1dB
- Output Power: 250 watts
- Power Gain: 32.1 dB
- Operating Frequency: 1,090 MHz
- Features: MOSFET, MOSFET RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: POWER MOSFET 203 AMPS, 100 VOLTS Product overview: NTBGS004N10G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers
- V(BR)DSS: 100 volts
- PD: 340 milliwatts
- TJ: -55 to 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: Perfect Switch, LLC
Description: Controllers with more common, lesser performing silicon and Schottky isolators. POWER-GATE sets the benchmark for ultra-low on-resistance which means devices require no heat sinking and no airflow at currents up to 300 amps. Wrapped in a custom, insert-molded ABS package, single
- Number of Inputs: 1
- Number of outputs: 1
- Voltage: 12 to 24 volts
- Current: 100 amps
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Supplier: Perfect Switch, LLC
Description: environments. An inline, fast-blow, one amp fuse on the primary ground wire protects the device from reverse polarity should the battery be connected incorrectly. POWER-GATE is recommended by top battery manufacturers to insure that DC power gets to where it’s needed without the
- Number of Inputs: 1
- Number of outputs: 2
- Voltage: 12 to 24 volts
- Current: 100 amps
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power MOSFET 13 Amps, 100 Volts, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: NTP13N10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is
- PD: 64,700 milliwatts
- TJ: -55 C
- Features: MOSFET
- Polarity: N-Channel
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Supplier: Broadcom Inc.
Description: Manufacturers List QML-38534 for Hybrid Microcircuits. The device consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. The device is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high
- Rise Time: 0.1 µs
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -55 to 125 C
- Input: DC
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Supplier: Broadcom Inc.
Description: Manufacturers List QML-38534 for Hybrid Microcircuits. The device consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. The device is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high
- Rise Time: 0.1 µs
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -55 to 125 C
- Input: DC
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power MOSFET 12 Amps, 100 Volts, P Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: MTP12P10G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power
- PD: 75,000 milliwatts
- TJ: -65 C
- Features: MOSFET
- Polarity: P-Channel
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 1323913-PD57018 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Packaging: Tube Standard Package: 50 Voltage - Rated: 65 V Frequency: 945MHz Current - Test: 100 mA Gain: 16.5dB Transistor Type: LDMOS
- Output Power: 18 watts
- Power Gain: 16.5 dB
- Operating Frequency: 945 MHz
- Features: MOSFET, MOSFET RF Transistors, Other
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Supplier: ValueTronics International, Inc.
Description: output current/voltage: 0-26 V, 0-60 A, 0-52 V, 0-30 A Efficiency up to 91 % Wide input voltage range: 90-265 VAC, 48-62 Hz Active Power Factor Correction: PF=0.99 100 kHz MOSFET power conversion technique 0 - 5 V analog programmable (on both voltage and current) Isolated
- DC Output Power: 1,500 watts
- Type: DC Power Supply
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Supplier: Radwell International
Description: MOSFET DRIVER, AEC-Q100, H-BRIDGE, SOIC8, DRIVER CONFIGURATION: HALF BRIDGE, PEAK OUTPUT CURRENT: 1 AMP, SUPPLY VOLTAGE MIN:10V, SUPPLY VOLTAGE MAX: 15V, DRIVER CASE STYLE: SOIC, NO. OF PINS: 8 PINS, INPUT DELAY: 40NS, OUTPUT DELAY: 20NS. FREE 2 YEAR RADWELL WARRANTY
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Supplier: TE Connectivity
Description: Non-Polarized, Monostable Coil Polarity Protection Diode : With Coil Power Measurement : Milliwatts Coil Suppression Diode : With Coil Voltage (VDC) : 12 Shock : 75G's, 6ms TO-5/.100 Grid Relay Coil Power Rating (DC) (MILW) : 169 TO-5/.100 Grid Relay Coil Resistance (OHM)
- DC Coil Voltage: 12 volts
- Operating Temperature: -85 to 257 F
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Supplier: Allied Electronics, Inc.
Description: 100 A, DC Solid-State Relay Latest generation MOSFET technology Ultra low on-state resistance Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient Ultra low output leakage current Low control current consumption Triggered
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Supplier: Skyworks Solutions, Inc.
Description: The new Si82Bx family are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET and IGBT. All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, single channel with combined
- Supply Voltage: 5 to 30 volts
- Operating Temperature: -40 to 125 C
- Input Threshold: CMOS
- Features: Other
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Supplier: Skyworks Solutions, Inc.
Description: The new Si82Ax family are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET and IGBT. All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, single channel with combined
- Supply Voltage: 5 to 30 volts
- Operating Temperature: -40 to 125 C
- Input Threshold: CMOS
- Features: Other
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Supplier: Skyworks Solutions, Inc.
Description: The new Si82Bx family are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET and IGBT. All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, single channel with combined
- Supply Voltage: 5 to 30 volts
- Operating Temperature: -40 to 125 C
- Input Threshold: CMOS
- Features: Other
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Supplier: Skyworks Solutions, Inc.
Description: The new Si82Ax family are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET and IGBT. All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, single channel with combined
- Supply Voltage: 5 to 30 volts
- Operating Temperature: -40 to 125 C
- Input Threshold: CMOS
- Features: Other
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Supplier: Infineon Technologies AG
Description: 48 V smart high-side MOSFET gate driver with SPI for automotive applications The EiceDRIVERTM 2ED4820-EM is a smart high-side N-channel MOSFET Gate driver with two outputs controlled via SPI. The integrated powerful charge pump allows external MOSFETs to stay continuously on.
- Peak Output Current: 0.3 amps
- Supply Voltage: 20 to 70 volts
- Propagation Delay: 3,000 ns
- Driver Type: High-side Gate Driver
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Supplier: Infineon Technologies AG
Description: EiceDRIVER™ 1200 V high-side/low-side gate driver IC with 2.3 A source, 2.3 A sink current in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1323S12P supports Active Miller Clamp (AMC) and Short Circuit Clamp
- Peak Output Current: 2.3 amps
- Supply Voltage: -1 to 25 volts
- Propagation Delay: 350 ns
- Driver Type: High-side Gate Driver, Low-side Gate Driver
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Supplier: Infineon Technologies AG
Description: EiceDRIVER™ 1200 V high-side/low-side gate driver IC with typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1321S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against
- Peak Output Current: 2.3 amps
- Supply Voltage: -1 to 25 volts
- Propagation Delay: 350 ns
- Driver Type: High-side Gate Driver, Low-side Gate Driver
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Supplier: Infineon Technologies AG
Description: EiceDRIVER™ 1200 V half-bridge gate driver IC with 2.3 A source, 2.3 A sink current and cross conduction prevention in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1324S12P supports Active Miller Clamp (AMC),
- Peak Output Current: 2.3 amps
- Supply Voltage: -1 to 25 volts
- Propagation Delay: 500 ns
- Driver Type: Dual Gate Driver (Half-bridge)
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Supplier: Critical Velocity Enterprises, LLC
Description: Control the power to any resistive load such as a heater, lamp, or electrolytic cell using any 1k to 30k potentiometer. This PWM controller runs cool while handling up to 30 amps of continuous current. A 30 Amp fuse is required for safe operation. Not for use with inductive
- Application: Commercial
- Features: Other
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Supplier: Critical Velocity Enterprises, LLC
Description: reduces stress on mechanics and power supplies. Logic Controller Enable input High efficiency MOSFET design for cool operation Heavy-Duty Heatsink for reliable operation Specifications: 15 Amps continuous current 10 - 26 VDC operation PWM Range: 0% - 100% Logic level
- Maximum Output Voltage: 10 to 26 volts
- Rated Power: 390.0000000000001 watts
- Continuous Output Current: 15 amps
- Supply Voltage (DC): 10 to 26 volts
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Supplier: Critical Velocity Enterprises, LLC
Description: Enable input High efficiency MOSFET design for cool operation Heavy-Duty Heatsink for reliable operation Specifications: 15 Amps continuous current 10 - 26 VDC operation PWM Range: 0% - 100% Logic level Forward/Reverse input 200 Hz switching frequency Connections: Terminal
- Maximum Output Voltage: 10 to 26 volts
- Rated Power: 390.0000000000001 watts
- Continuous Output Current: 15 amps
- Supply Voltage (DC): 10 to 26 volts
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BlockMaster Electronic’s High-Power Terminal Blocks series start at 30A @ 300V and are available up to 130A @ 600V. For added protection, we offer clear plastic covers for field installation. All of our products have UL approval and are RoHS compliant. (read more)
Browse Terminal Blocks Datasheets for BlockMaster Electronics, Inc. -
Nexperia, the essential semiconductor expert, announced a broadening of package options for its NextPower 80/100 V MOSFETs portfolio, previously only available in LFPAK56E, to now also include LFPAK56 and LFPAK88 packaging. These devices have been designed to combine high efficiency with (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia today announced that the ongoing expansion of its NextPower 80 V and 100 V MOSFET portfolio is continuing apace with the release of several new LFPAK devices in industry-standard 5x6 mm and 8x8 mm footprints. These (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
Nexperia today announced the launch of 16 new 80 V and 100 V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering industry-leading power density and outright performance. The innovative copper-clip design (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Cost-efficient micro-lead portfolio combines safety with enhanced design flexibility using standard footprint package solutions. Nexperia today introduced its first portfolio of 40-100 V automotive MOSFETs in industry standard micro-lead packages designed for use in (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
BlockMaster Electronic’s High-Power Terminal Blocks series start at 30A @ 300V and are available up to 130A @ 600V. For added protection, we offer clear plastic covers for field installation. All of our products have UL approval and are RoHS compliant. (read more)
Browse Terminal Blocks Datasheets for BlockMaster Electronics, Inc. -
high power density, Nexperia’s CCPAK1212 MOSFETs reduce the need for parallel-connected devices, as well as saving up to 40% PCB space compared to traditional TOLL- or TOLT-packaged alternatives due to their compact size. The next-generation 100 V AEC-Q101 trench silicon platform (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
80/100 V AEC-Q101 leaded (LFPAK) trench MOSFETs, for low-power 48 V automotive applications, such as fuel injectors & LED lighting. Housed in robust copper-clip LFPAK packages, they deliver the ideal balance of efficiency & performance in high-frequency, low-power 48 V applications (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
loads. With low input currents, high open-loop voltage gain (100V/mV), 200KHz bandwidth, and rapid 0.1V/µs slew rate, the ALD 2706 is a versatile, micropower dual op amp. It processes a 0.998V analog signal with a 1.000V supply, requiring only 0.1pA input bias current. Furthermore, its robust (read more)
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All of Rochester’s in-stock devices are 100% authorized, traceable, certified, and guaranteed factory-direct and risk-free from our supplier partners including Infineon, Nexperia, (read more)
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Development of a DC Motor Drive for Extreme Cold Environments
The following transistors were chosen to be tested: a 1.5 Amp 100 Volt silicon IRLL110 HEXFET power MOSFET from International Rectifier, a 1.5 Amp 55 Volt SOI HTNFET from Honeywell, and a 5 Amp 1500 Volt SiC cascode JFET from …
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Page 32. Semiconductor parts with 130 in root number
14 AMP 100 VOLTS 0.16ohm N-Channel Power MOSFET .
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Page 46. Semiconductor parts with 150 in root number
30 AMP 100 Volts 0.055OHM N-Channel POWER MOSFET .
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Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA
The device is a 100 amp , 25 volt n-channel power MOSFET , manufactured under Texas Instruments’ recently acquired .
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Page 4. Semiconductor parts with 914 in root number
-18 AMP - 100 VOLTS 0.20 ohm P-Channel Power MOSFET .
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Page 3. Semiconductor parts with 913 in root number
-11 AMP - 100 VOLTS 0.30 ohm P-Channel Power MOSFET .
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Page 46. Semiconductor parts with 160 in root number
50 AMP 100 VOLTS 0.04 ohm RADIATION HARDENED N-Channel Power MOSFET .
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Conferences/Exhibits
The company also announced it has lowered the on- resistance ratings for its 800- 100 oV MOSFETs , and has added a new 15 Amp power MOSFET to its standard MOSFET line.
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STRESS ALERT
The company also announced it has lowered the on- resistance ratings for its 800- 100 oV MOSFETs , and has added a new 15 Amp power MOSFET to its standard MOSFET line.
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Baseband analog front-end and digital back-end for reconfigurable multi-standard terminals
This reduces its power consumption with respect to other closed-loop structures (active-RC or MOSFET -C), in which the op- amp unity-gain bandwidth fu > 50 ÷ 100 · fLP is used, requiring a large power consumption; ■ High-linearity: a …