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Supplier: Nexperia B.V.
Description: NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower spiking 200 Amps ID(max) continuous current
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower spiking 180 Amps ID(max) continuous current
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower spiking 267 Amps ID(max) continuous current
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: POWER MOSFET 203 AMPS, 100 VOLTS
- IDSS: 21000 milliamps
- PD: 3700 milliwatts
- Package Type: TO-263, Other
- Polarity: N-Channel, Other
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Description: POWER MOSFET 203 AMPS, 100 VOLTS
- Package Type: TO-263, Other
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. Features and benefits Low Qrr for higher efficiency and lower spiking 460 Amps ID(max) continuous
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Perfect Switch, LLC
Description: Discharge Controllers with more common, lesser performing silicon and Schottky isolators. POWER-GATE sets the benchmark for ultra-low on-resistance which means devices require no heat sinking and no airflow at currents up to 300 amps. Wrapped in a custom, insert-molded ABS package,
- Application: Automotive, Emergency Vehicle, Industrial, Marine, Other Application
- Connection: Screw terminals
- Current: 100 amps
- Height: 0.9400 inch
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Supplier: Perfect Switch, LLC
Description: well suited for hostile environments. An inline, fast-blow, one amp fuse on the primary ground wire protects the device from reverse polarity should the battery be connected incorrectly. POWER-GATE is recommended by top battery manufacturers to insure that DC power gets to where
- Application: Automotive, Emergency Vehicle, Industrial, Marine, Other Application
- Connection: Screw terminals
- Current: 100 amps
- Height: 2.13 inch
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1345941-MMRF2010NR1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs Package: Tape & Reel Standard Package: 500 Voltage - Rated: 100 V Technology: LDMOS Frequency: 1.09GHz Current - Test: 80 m
- Operating Frequency: 1090 MHz
- Output Power: 250 watts
- Package Type: SOT3
- Power Gain: 32.1 dB
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Supplier: Win Source Electronics
Description: : 24dB Power - Output: 1800W Mounting Type: Chassis Mount Package / Case: SOT-979A Supplier Device Package: NI-1230-4H ECCN: EAR99 Fake Threat In the Open Market: 38 pct. MSL Level: 1 (Unlimited) Current Rating (Amps): 100mA REACH Status: REACH Unaffected HTSUS: 8541.29.0075
- Operating Frequency: 1.8 to 470 MHz
- Output Power: 1800 watts
- Package Type: SOT3
- Power Gain: 24 dB
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Supplier: Win Source Electronics
Description: : 100 mA Gain: 20dB Voltage - Test: 50 V Power - Output: 700W Mounting Type: Chassis Mount Package / Case: SOT-502E Supplier Device Package: CDFM2 ECCN: EAR99 Fake Threat In the Open Market: 38 pct. MSL Level: 1 (Unlimited) Current Rating (Amps): 2.8µA REACH Status: REACH
- Operating Frequency: 960 to 1215 MHz
- Output Power: 700 watts
- Package Type: SOT3
- Power Gain: 20 dB
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 1323913-PD57018 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Packaging: Tube Standard Package: 50 Voltage - Rated: 65 V Frequency: 945MHz Current - Test: 100 mA Gain
- Operating Frequency: 945 MHz
- Output Power: 18 watts
- Package Type: SOT3, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
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Supplier: Visual Sound, Inc.
Description: Bogen Communications, Inc. The Bogen HTA Professional Series Power Amplifiers are high-performance units employing state-of-the-art Power MOSFET technology. The characteristics of Power MOSFETS make them ideally suited to power amplifier design, providing
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Supplier: Visual Sound, Inc.
Description: Bogen Communications, Inc. The Bogen HTA250A Power Amplifier is a high performance unit employing Power MOSFET technology. The unique characteristics of Power MOSFETS make them ideally suited to power amplifier design, providing far superior performance and
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Supplier: ValueTronics International, Inc.
Description: Autoranging maximum output current/voltage: 0-26 V, 0-60 A, 0-52 V, 0-30 A Efficiency up to 91 % Wide input voltage range: 90-265 VAC, 48-62 Hz Active Power Factor Correction: PF=0.99 100 kHz MOSFET power conversion technique 0 - 5 V analog
- DC Output Power: 1500 watts
- Type: DC Power Supply
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Supplier: TE Connectivity
Description: TO-5/.100 Grid Relay Contact Current Rating (AMP) : 1 Electrical Characteristics Actuating System : DC Coil Magnetic System : Non-Polarized, Monostable Coil Polarity Protection Diode
- Operating Temperature: -85 to 257 F
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Supplier: TE Connectivity
Description: Relay Contact Arrangement : 2 Form C, DPDT, 2 C/O TO-5/.100 Grid Relay Contact Current Rating (AMP) : 1 Electrical Characteristics Actuating System : DC Coil Magnetic System : Non
- Operating Temperature: -85 to 257 F
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Supplier: TE Connectivity
Description: Relay Contact Arrangement : 2 Form C, DPDT, 2 C/O TO-5/.100 Grid Relay Contact Current Rating (AMP) : 1 Electrical Characteristics Actuating System : DC Coil Magnetic System : Non
- Operating Temperature: -85 to 257 F
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Supplier: TE Connectivity
Description: Grid Relay Contact Arrangement : 2 Form C, DPDT, 2 C/O TO-5/.100 Grid Relay Contact Current Rating (AMP) : 1 Electrical Characteristics Actuating System : DC Coil Magnetic System
- Operating Temperature: -85 to 257 F
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Supplier: Broadcom Inc.
Description: QML-38534 for Hybrid Microcircuits. The device consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. The device is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage
- Collector Emitter Breakdown Voltage: 5 volts
- Mounting Option: Surface Mount
- Operating Temperature: -55 to 125 C
- Optocoupler Input: DC
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Supplier: Radwell International
Description: MOSFET DRIVER, AEC-Q100, H-BRIDGE, SOIC8, DRIVER CONFIGURATION: HALF BRIDGE, PEAK OUTPUT CURRENT: 1 AMP, SUPPLY VOLTAGE MIN:10V, SUPPLY VOLTAGE MAX: 15V, DRIVER CASE STYLE: SOIC, NO. OF PINS: 8 PINS, INPUT DELAY: 40NS, OUTPUT DELAY: 20NS. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Skyworks Solutions, Inc.
Description: The new Si82Dx family are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET and IGBT. All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, dual channels with universal
- IC Package Type: SOIC, Other
- Input Threshold: CMOS
- Operating Temperature: -40 to 125 C
- Output Configuration: Other
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Supplier: Infineon Technologies AG
Description: 018 MOSFET 100V IAUS300N10S5N014 OPTIREG™ PMIC (Automotive) TLF35584QVVS2 Applications 48 V to 12 V DC-DC converter Automotive 48 V battery management system (BMS) Electric power steering (EPS) Light electric vehicles (LEV)
- Driver Type: High-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 0.3000 amps
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Supplier: Microchip Technology, Inc.
Description: power MOSFETs that can supply up to 600mA output current in PWM mode. It can operate with a maximum duty cycle of 100% for use in low-dropout conditions. Additional Features 2.7V to 5.5V supply voltage Light load LowQ® LDO mode 18µA
- IC Package Type: Other
- Operating Temperature: -40 to 125 C
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Supplier: Radwell International
Description: TRANSISTOR, POWER MOSFET, N CHANNEL, 100V, 1 AMP, 0.54 OHM, DIP, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Infineon Technologies AG
Description: produces sinusoidal motor phase current up to 100 Amps peak and 40 Amps RMS continuous motor drive power of 2.5 kW. It operates with Infineon's motor control suite. Summary of Features 3-phase BLDC, PMSM motor drive inverter Sensorless FOC control firmware
- Category: Development Board
- Supported System: Other
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Supplier: RS Components, Ltd.
Description: Power operational amplifiers from Texas Instruments with high current outputs suitable for driving low impedance and difficult loads. Many of these devices are capable of operating at higher supply voltages than general purpose op amps. Typical applications include driving
- Gain-Bandwidth Product (GBW): 2.5 MHz
- Package Type: SOIC, Other
- Pin Count: 8
- Slew Rate (SR): 13 V/µs
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Supplier: Critical Velocity Enterprises, LLC
Description: -Start reduces stress on mechanics and power supplies. Logic Controller Enable input High efficiency MOSFET design for cool operation Heavy-Duty Heatsink for reliable operation Specifications: 15 Amps continuous current 10 - 26 VDC operation PWM Range: 0% - 100% Logic
- Configuration: PC Board
- Continuous Output Current: 15 amps
- Features: Soft Start
- Maximum Output Voltage: 10 to 26 volts
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Supplier: Critical Velocity Enterprises, LLC
Description: -Duty Heatsink for reliable operation Specifications: 30 Amps continuous current 5.5 - 20 VDC operation PWM Range: 0% - 100% Connections: Terminal blocks for signal and power connections
- Application: Commercial
- Lamp Voltage & Frequency: Other
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Supplier: Richardson RFPD
Description: power MOSFETs and IGBTs used in a wide variety of inverter and motor control applications. The Si826x isolated gate drivers utilize Skyworks Solutions' proprietary silicon isolation technology, supporting up to 5.0 kVRMS withstand voltage per UL1577 and 10kV surge protection per VDE
- Peak Output Current: 0.6000 amps
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Supplier: ValueTronics International, Inc.
Description: ) Semiconductor devices (SCRs, IGBTs, MOSFETs, CMOS, BJTs) Power inverters/converters Electronic ballasts Industrial/consumer electronics Mobile communications (phone, satellite, relay stations) Motor drives Transportation systems (electronic
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Supplier: ValueTronics International, Inc.
Description: state displays and other semiconductor devices. By selecting one of three application specific adapters with the 178 plug-in, expanded parameter measurements are available for linear op-amps, SCRs and three terminal regulators. Typical measurements include leakage, breakdown voltages up to
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Supplier: ValueTronics International, Inc.
Description: Devices (SCRs, IGBTs, MOSFETs, CMOS, BJTs) Power Inverters/Converters Electronic Ballasts Industrial /Consumer Electronics Mobile Communications (Phone, Satellite, Relay Stations) Motor Drives Transportation Systems (Electronic Vehicles
- Bandwidth: 15 MHz
- Probe Type: Current
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Supplier: Fuji Electric Corp. of America
Description: Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by
- IDSS: 100000 milliamps
- Package Type: Other
- QG: 140 nC
- TJ: 150 C
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- (Tol.) Yellow - Violet - Black - Red - (Tol.) ±1%, ±5% Audio filtering, op-amp input 100 kΩ Brown - Black - Yellow - (Tol (read more)
Browse Power Resistors Datasheets for ODG (Origin Data Global) -
BlockMaster Electronic’s High-Power Terminal Blocks series start at 30A @ 300V and are available up to 130A @ 600V. For added protection, we offer clear plastic covers for field installation. All of our products have UL approval and are RoHS compliant. (read more)
Browse Terminal Blocks Datasheets for BlockMaster Electronics, Inc. -
Nexperia today announced the launch of 16 new 80 V and 100 V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering industry-leading power density and outright performance. The innovative copper-clip design (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia, the essential semiconductor expert, announced a broadening of package options for its NextPower 80/100 V MOSFETs portfolio, previously only available in LFPAK56E, to now also include LFPAK56 and LFPAK88 packaging. These devices have been designed to combine high efficiency with (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia today announced that the ongoing expansion of its NextPower 80 V and 100 V MOSFET portfolio is continuing apace with the release of several new LFPAK devices in industry-standard 5x6 mm and 8x8 mm footprints. These (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
Cost-efficient micro-lead portfolio combines safety with enhanced design flexibility using standard footprint package solutions. Nexperia today introduced its first portfolio of 40-100 V automotive MOSFETs in industry standard micro-lead packages designed for use in (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
BlockMaster Electronic’s High-Power Terminal Blocks series start at 30A @ 300V and are available up to 130A @ 600V. For added protection, we offer clear plastic covers for field installation. All of our products have UL approval and are RoHS compliant. (read more)
Browse Terminal Blocks Datasheets for BlockMaster Electronics, Inc. -
high power density, Nexperia’s CCPAK1212 MOSFETs reduce the need for parallel-connected devices, as well as saving up to 40% PCB space compared to traditional TOLL- or TOLT-packaged alternatives due to their compact size. The next-generation 100 V AEC-Q101 trench silicon platform (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
80/100 V AEC-Q101 leaded (LFPAK) trench MOSFETs, for low-power 48 V automotive applications, such as fuel injectors & LED lighting. Housed in robust copper-clip LFPAK packages, they deliver the ideal balance of efficiency & performance in high-frequency, low-power 48 V applications (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
loads. With low input currents, high open-loop voltage gain (100V/mV), 200KHz bandwidth, and rapid 0.1V/µs slew rate, the ALD 2706 is a versatile, micropower dual op amp. It processes a 0.998V analog signal with a 1.000V supply, requiring only 0.1pA input bias current. Furthermore, its robust (read more)
Browse Operational Amplifiers Datasheets for Advanced Linear Devices, Inc.
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Development of a DC Motor Drive for Extreme Cold Environments
The following transistors were chosen to be tested: a 1.5 Amp 100 Volt silicon IRLL110 HEXFET power MOSFET from International Rectifier, a 1.5 Amp 55 Volt SOI HTNFET from Honeywell, and a 5 Amp 1500 Volt SiC cascode JFET from …
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Page 32. Semiconductor parts with 130 in root number
14 AMP 100 VOLTS 0.16ohm N-Channel Power MOSFET .
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Page 46. Semiconductor parts with 150 in root number
30 AMP 100 Volts 0.055OHM N-Channel POWER MOSFET .
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Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA
The device is a 100 amp , 25 volt n-channel power MOSFET , manufactured under Texas Instruments’ recently acquired .
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Page 4. Semiconductor parts with 914 in root number
-18 AMP - 100 VOLTS 0.20 ohm P-Channel Power MOSFET .
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Page 3. Semiconductor parts with 913 in root number
-11 AMP - 100 VOLTS 0.30 ohm P-Channel Power MOSFET .
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Page 46. Semiconductor parts with 160 in root number
50 AMP 100 VOLTS 0.04 ohm RADIATION HARDENED N-Channel Power MOSFET .
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Conferences/Exhibits
The company also announced it has lowered the on- resistance ratings for its 800- 100 oV MOSFETs , and has added a new 15 Amp power MOSFET to its standard MOSFET line.
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STRESS ALERT
The company also announced it has lowered the on- resistance ratings for its 800- 100 oV MOSFETs , and has added a new 15 Amp power MOSFET to its standard MOSFET line.
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Baseband analog front-end and digital back-end for reconfigurable multi-standard terminals
This reduces its power consumption with respect to other closed-loop structures (active-RC or MOSFET -C), in which the op- amp unity-gain bandwidth fu > 50 ÷ 100 · fLP is used, requiring a large power consumption; ■ High-linearity: a …