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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Dual 12V PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 200mA 40V
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: GENERIC Semiconductors PMD12K80
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Supplier: Radwell International
Description: ST MICRO Semiconductors BYT12P1000
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Supplier: ODG (Origin Data Global)
Description: 12P DIP Round Hole -40?~+105? 7.62mm 2.54mm DIP-12 IC / Transistor Socket ROHS
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Supplier: ODG (Origin Data Global)
Description: Transistor gasket/Nylon gasket
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Supplier: ODG (Origin Data Global)
Description: SOT-363 Digital Transistors ROHS
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Supplier: ODG (Origin Data Global)
Description: 12V 4.3A 45mO@4.5V,4.3A 1.3W 1V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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Supplier: Win Source Electronics
Description: : -55 °C Element Configuration: Dual Max Power Dissipation: 250 W Max Operating Temperature: 200 °C Continuous Drain Current (ID): 12 A Gate to Source Voltage (Vgs): 20 V
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 757420-TK12V60W Manufacturer Homepage: www.semicon.toshiba. co.jp/eng Reference case: DFN-888 Reference Date Code: 14+ Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 938147-ULN2003V12DR Operating Temperature Range: -40°C ~ 125°C (TJ) Features: Mosfet Array - Surface Mount 16-SOIC Package: 16-SOIC (0.154", 3.90mm Width) Package: Reel - TR Mounting: Surface Mount
- Package Type: SOT3, Other
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode this common base device supplies a minimum of 12 watts of peak pulse power under
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 1.2x1.2mm
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 30V 12.5W 100@100mA,2V 3A NPN TO-126 Bipolar Transistors - BJT ROHS
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package Applications Space
- Transistor Type: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Operating Frequency: 2 to 175 MHz
- Output Power: 80 watts
- Power Gain: 13 dB
- Transistor Type: MOSFET RF Transistors
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Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 3A 85MHz 1.04W Surface Mount 8-MSOP
- Package Type: Other
- Polarity: PNP
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Supplier: Acme Chip Technology Co., Limited
Description: NPN POWER TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOIC-16 Darlington Transistor Arrays ROHS
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors N-Ch Radio Freq 1A 3W 7V VDSS
- Output Power: 1.58 watts
- Packing Method: Tape Reel, Other
- Power Gain: 12 dB
- Transistor Type: MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: Power Bipolar Transistor, 16A, 140V, NPN
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Qorvo
Description: The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different
- Package Type: Other
- Transistor Grade / Operating Range: Military
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Supplier: Broadcom Inc.
Description: Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz)
- Package Type: Other
- Polarity: NPN, Other
- Transistor Grade / Operating Range: Other
- Transistor Type: Bipolar RF Transistors
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Transistors - NPN+PNP, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor) -- EMD12Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Package Type: Other
- Polarity: NPN, PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP 12V/1A Sch Comb
- IC(max): 4000 milliamps
- Number of Transistors in the Chip: 1
- PD: 3000 milliwatts
- Packing Method: Tape Reel, Other
Find Suppliers by Category Top
Featured Products Top
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
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Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics