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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -12V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; DC Collector Current:3A; Power Dissipation Pd:480mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency ft:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 12V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; DC Collector Current:100mA; Power Dissipation Pd:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; DC Current Gain hFE:25hFE RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -12V; Transistor Polarity:PNP; Collector Emitter Voltage Max:12V; Continuous Collector Current:2.5A; Power Dissipation:625mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:110MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12 V. Search-friendly keywords include transistor, BJT, switching, amplification, 12 V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports
- Noise Figure: 1.2 dB
- PD: 250 milliwatts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 12V, Bipolar Transistor, Bipolar Transistor Arrays. This listing
- PD: 150 milliwatts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
- Polarity: NPN, PNP
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V, 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, 12V, Bipolar Transistor, Bipolar Transistor Arrays. This listing
- IC(max): 4,500 milliamps
- VCEO: 15 to 12 volts
- VCBO: 20 volts
- fT: 120 to 110 MHz
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, RF, NPN, 12V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10.5GHz; Power Dissipation Pd:450mW; DC Collector Current:5mA; DC Current Gain hFE:95hFE; RF Transistor RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: 12P DIP Round Hole -40℃~+105℃ 7.62mm 2.54mm DIP-12 IC / Transistor Socket ROHS
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors Low Pwr Relay Driver
- Features: Darlington
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 062218-PVR100AD-B12V Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN + Zener Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 6-TSOP Maximum Current
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1240889-PVR100AZ-B12V Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 938147-ULN2003V12DR Operating Temperature Range: -40°C ~ 125°C (TJ) Features: Mosfet Array - Surface Mount 16-SOIC Package: 16-SOIC (0.154", 3.90mm Width) Package: Reel - TR Mounting: Surface Mount Family Name: ULN2003 Categories: Discrete
- TJ: -40 to 125 C
- Features: MOSFET, Other
- Package Type: SOT3
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Darlington Transistors - Triode/MOS Tube/Transistor >> Darlington Transistor Arrays -- ULN2003V12PWRSupplier: LCSC Electronics Technology (HK) Limited
Description: TSSOP-16 Darlington Transistor Arrays ROHS
- Features: Darlington
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Supplier: Richardson RFPD
Description: SEMITRANS® 3 Features V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt Typical
- Features: IGBT, Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 20Vces 10Vebo 500mA 625mW
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1051040-KSP12TA Packaging: AMMO PACKAGE Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package:
- Polarity: NPN
- Features: Other
- Package Type: SOT3, TO-92
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 1.2x1.2mm
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 100 milliwatts
- TJ: 150 C
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array 2 PNP (Dual) 12V 3A 85MHz 1.04W Surface Mount 8-MSOP
- Features: Other
- Polarity: PNP
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP 12V/1A Sch Comb
- VCEO: 12 volts
- IC(max): 4,000 milliamps
- PD: 3,000 milliwatts
- TJ: 125 C
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Supplier: Qorvo
Description: The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from
- Power Gain: 24 dB
- Operating Frequency: 0 to 12,000 MHz
- Features: Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP HighV 500V
- VCEO: 500 volts
- IC(max): 150 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Description: MOSFET N-CH 120V 32A TO220F
- V(BR)DSS: 120 volts
- IDSS: 32,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Allied Electronics, Inc.
Description: Transistor; SS T092 RF Transistor NPN 160V -Lead Free
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET N-CH 600V 11.5A 4DFN
- V(BR)DSS: 600 volts
- IDSS: 11,500 milliamps
- Features: MOSFET, Other
- Packing Method: Tape Reel
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: MOSFET
- Polarity: P-Channel
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Description: IGBT MODULE 1200V 100A
- Features: IGBT, Other
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Supplier: Acme Chip Technology Co., Limited
Description: TRANS NPN 45V 0.1A SC74
- VCEO: 45 volts
- IC(max): 100 milliamps
- Features: General Purpose BJT, Other
- Packing Method: Tape Reel
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Supplier: Utmel Electronic Limited
Description: Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
- Features: Bipolar RF Transistors
- Polarity: NPN
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Supplier: Allied Electronics, Inc.
Description: Small Signal Transistor, PNP Transistor Type, -60 V Collector to Emitter Voltage +175 °C maximum operating temperature Designed for high speed saturated switching and general purpose applications.
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Supplier: Nexperia B.V.
Description: NPN/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN/NPN complement: - PNP/PNP complement: kΩ - kΩ - Nexperia - JEITA NHUMD3 10 10 SOT363 SC-88
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Power Gain: 8 dB
- Output Power: 12 watts
- Operating Frequency: 870 to 990 MHz
- Features: Other, Power BJT Transistors
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Supplier: Qorvo
Description: Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,
- Power Gain: 11 dB
- Operating Frequency: 0 to 12,000 MHz
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 3A, DPAK
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