Products/Services for 144 MHz Transistor Power Amplifiers
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Power Amplifiers - (191 companies)Power amplifiers deliver a specific amount of AC power to a load. They are used in audio frequency and radio frequency applications. Types of Power Amplifiers There are many different types of power amplifiers. Examples include: RF power... -
RF Power Dividers and RF Power Combiners - (331 companies)RF power dividers and RF power combiners are circuits that accept input signals and deliver multiple outputs that are equal in phase and amplitude. There are two basic product categories: passive and active. Passive products produce an output signal... -
Transistors - (919 companies)...transistors are preferred for high speed switching applications and as high-power amplifiers for systems with large current flow. Field effect transistors are preferred for weak-signal applications (e.g. simple wireless communications and broadcast... -
Power Bipolar Transistors - (87 companies)Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals... -
Oscillators - (647 companies)...with transistor-transistor logic (TTL) use a 5 V power supply. TTL signals are "low" when between 0 V and 0.8 V with respect to the ground terminal and "high" when between 2 V and 5 V. A Complementary metal-oxide semiconductor (CMOS) is a low-power technology that can... -
Power Operational Amplifiers - (97 companies)...with three leads. TO-92, another transistor outline package, is often used for low power devices. TO-220 is suitable for high power, medium current, and fast-switching power devices. Standards. Many suppliers specify power operational amplifiers...
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RF Transistors - (315 companies)RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. RF transistors are designed to handle high-power radio frequency (RF) signals in devices...
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Optical Bandpass Filters - (119 companies)Optical bandpass filters are designed to transmit a specific waveband. They are composed of many thin layers of dielectric materials, which have differing refractive indices to produce constructive and destructive interference in the transmitted light.
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Bipolar RF Transistors - (185 companies)Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters...
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RF MOSFET Transistors - (92 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. MOSFET RF transistors...
Product News
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ASAP Semiconductor LLC
Amplifiers Amplifiers are among the most commonly used electronic devices in the world. They serve as one of the basic building blocks of many circuits and come in a wide range of forms. Simply put, amplifiers are electronic devices that increase the power of a signal. In other words, they increase the amplitude of a signal, making it stronger than the given output. Though the operation of an amplifier is theoretically quite simple, there are a lot of factors they have to deal... (read more) -
Win Source Electronics
MMBT3904LT3G NPN Bipolar Transistor Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features. Collector-Emitter Voltage (VCEO): 40V. Collector-Base Voltage (VCBO): 60V. Emitter-Base Voltage (VEBO): 6V. Continuous Collector Current (IC): 200mA. DC Current Gain (hFE): 100 to 300. Collector-Emitter Saturation Voltage (Vce (sat)): 300mV @ 5mA, 50mA. Maximum Power Dissipation: 300mW. Frequency... (read more)Browse Transistors Datasheets for Win Source Electronics -
ECON Technologies Co.,Ltd
Power Amplifier “VSA Series” VSA-H series power amplifier adopt the latest IGBT technology and MCU DSP FPGA architecture design, and use advanced digital control strategies to ensure high conversion efficiency and high security for each module and the entire system. I will secure it. Single power module is designed for standard 8kVA output with high peak power margin. It can meet the working requirements of most shakers. VSA-H series is designed based on integrated logical unit, power supply unit and control unit... (read more) -
Win Source Electronics
ON Semi SMMBT3904LT3G 40V NPN Transistor The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide range of applications, from audio signal... (read more)Browse Transistors Datasheets for Win Source Electronics -
Qorvo
Hybrid Power Doubler amplifier module 45 MHz - 1794 MHz, 34V, 18W, 23dB Gain High Output Power Doubler CATV Hybrid. The QPA3316 is a Hybrid Power Doubler amplifier module,with 23 dB of gain. The part employs GaAs/GaN die and has an operational bandwidth from 45 MHz to 1794 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. The DC current can be adjusted externally for optimum distortion vs. power consumption over a range of output levels. (read more)Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Win Source Electronics
High-Gain NPN Transistor | MMBT3904-7-F Diodes Incorporated MMBT3904-7-F Overview. Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V. Current Rating: Continuous collector current (Ic) of 200mA. Power Dissipation: 350mW, suitable for moderate power electronic circuits. High Gain Bandwidth Product: Transition frequency (ft) of 300MHz. Package: Compact SOT-23-3 package for space-constrained applications. Key Features... (read more)Browse Transistors Datasheets for Win Source Electronics -
Qorvo
3V Wideband, General Purpose/GSM Power Amplifier The QPA9510 is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with Qorvo 's advanced GaAs process. The amplifier provides 34dB of max gain and able to achieve +32dBm of P1dB along with flexibility in bias settings. QPA9510 is designed for use as the final RF amplifier in GSM hand-held equipment in 900 MHz band and other applications in the UHF bands. An analog on-board power controller provides over 70 dB range of gain adjustment. This control also allows... (read more)Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Daitron Co., Ltd.
Power Supply Recommended for Hi-Fi Amplifiers Among music enthusiasts worldwide, an amplifier is considered the core component determining the final sound quality. While sound sources and speakers are important, your listening experience can be completely different depending on the amplifier. In fact, high-fidelity amplifiers are more sensitive to power supply noise. This is because higher fidelity amplifiers feature higher gain and wider bandwidth, making them more susceptible to picking up noise. This is where SNR becomes crucial... (read more)Browse Power Supplies Datasheets for Daitron Co., Ltd. -
RDP Electrosense
ac powered strain gauge transducer amplifier S7MZ 115/230V ac powered strain gauge transducer amplifier. Signal conditioning is required where the output of a transducer needs to be boosted or changed into a form suitable for the monitor or logging device which will be used. These amplifiers are suitable for strain gauge sensors and some internally amplified transducers. Our S7 amplifiers are specifically designed to be installed close to the transducer so that the signal can be boosted as soon as possible. The S7 signal conditioning... (read more)Browse Signal Conditioners Datasheets for RDP Electrosense -
RDP Electrosense
DC powered strain gauge transducer amplifier S7DC dc powered strain gauge transducer amplifier. Signal conditioning is required where the output of a transducer needs to be boosted or changed into a form suitable for the monitor or logging device which will be used. These amplifiers are suitable for strain gauge sensors and some internally amplified transducers. Our S7 amplifiers are specifically designed to be installed close to the transducer so that the signal can be boosted as soon as possible. The S7 signal conditioning units... (read more)Browse Signal Conditioners Datasheets for RDP Electrosense
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The design of CMOS continuous-time VHF current and voltage-mode lowpass filters with Q-enhancement circuits
When the control voltage Vc4 changes from 0 Volt to 2.5 Volt and the Miller capacitance CM = 1.5 pF, the HSPICE simulated maximum-gain frequency f M (center frequency fo) changes from 144 MHz (166.2 MHz) to 205.6 .... With suitable transistor geometric ratio of the voltage amplifiers in the Q-enhancement circuits, the gain of the amplifiers can be as high as 1.87 and the -3 dB frequency as high as 1.3 GHz under 218 mW power dissipation.
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1978 Index IEEE Transactions on Consumer Electronics Vol. CE-24
…broadcast receivers; Radio communication receivers; TV receivers Radio spectrum management CB radio interference with TV and FM broadcast reception; CB expansion to 48- 50 MHz and 410-420 MHz bands; Beeman, Robert H … nJ Feb 78 135- 144 (2D05) Resonators; cf. Acoustic .... S Semiconductor switches; cf. Bipolar transistor switches; Light-triggered switches Signal processing; cf. TV receiver signal processing Signal processing AM/FM … 78 488-491 (4D04) Switches; cf. Light-triggered switches; Semiconductor switches Switching ampliers audio amplifiers , class G power amplifier using MOSFETs in…
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An 1 GHz Class E LDMOS Power Amplifier
One example of a high efficient Class E amplifier implemented with an LDMOS transistor as switching element has been reported in [3]. .... The amplifier achieved an output power of 54 W with 70 % efficiency at 144 MHz .
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An 1 GHz class E LDMOS power amplifier
One example of a high efficient Class E amplifier implemented with an LDMOS transistor tu switching element has been reported in [3]. .... The amplifier achieved an output power of 54W with 70% efficiency at 144 MHz .
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An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor
Due to the evolution of advanced MOS transistor technologies like lateral diffused metal–oxide–semiconductor (LDMOS), and the increasing de- mand of high-efficiency amplifiers for mobile communication, the class-E concept is again receiving attention, and output powers of up to 400 W … novel concept of the output network and the usage of the newly developed Silicon LDMOS device made it possible to achieve a record-high output power of 54 W with a comparatively high efficiency of 70% at a frequency of 144 MHz .
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Large-Signal Approach Yields Low-Noise VHF/UHF Oscillators | Components content from Microwaves & RF
Designed for low-noise, high-gain amplifiers to 2 GHz, the transistor features a transition frequency (fT) of 8 GHz for +8 VDC collectoremitter voltage and 50 mA collector current. .... The first step in designing the oscillator circuit for this transistor is to determine the small-signal parameters for the transistor at 144 MHz and under the operating conditions of +8.8 VDC collector-emitter voltage (Vce, 10 mA collector current (Ic .... For more output power , a collector current of 30 mA is a better choice.
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APS Science 2009.
Preliminary tests indicate that the design of a 200-kW, solid-state rf power system operating at 352- MHz and utilizing single-package transistor power amplifier devices operating at 1kW CW is feasible. .... 144 .
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Low Cost RF Amplifier for Community TV
It uses FET transistor for RF amplifier [2]. .... It can reduce power dissipation and increase the power generated [3]. .... It has been investigated for frequency UHF (225 MHz -400 MHz) and VHF (118 MHz- 144 MHz) [4].
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A high-dynamic range SiGe low-noise amplifier for X-band radar applications
[11] M. Byung-Wook, et al., “Ka-band SiGe HBT low noise amplifier design for simultaneous noise and input power matching,” Microwave and Wireless Components Letters, IEEE, vol.17, no.12, pp.891-893, Dec. 2007. .... S.P. Voinigescu, et al., “A scalable high-frequency noise model for bipolar transistors with application to .... [15] J.A. Tirado-Méndez, et al., “Comparison of the effectiveness of four linearizing techniques used in SiGe HBT LNA at 1900 MHz and low- bias voltage,” International Journal of RF and Microwave Computer- Aided Engineering, 14: 144 –152.
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The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation
16, pp. 142– 144 , Apr. 1995. .... [16] R. R. Siergiej et al., “High power 4H- SiC static induction transistors ,” in IEDM Tech. Dig., 1995, pp. 95–353. .... [18] K. Endoh et al., “150 MHz SIT amplifier ” (in Japanese), in Proc. 6th SI Symp., Final Rep. to the Japan Key Technology Ctr. by the Small Power Communication Co., 1993.
