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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 4 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4V, 2GHZ. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4V, 2GHZ, MOSFET Transistor, RF FETs, MOSFETs. This listing
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 2 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 2GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing
- Noise Figure: 1.5 dB
- PD: 150 milliwatts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET AF1 2GHz 60W OM780-4
- Output Power: 6.3 watts
- Power Gain: 18.9 dB
- Features: MOSFET, MOSFET RF Transistors, Other
- Polarity: N-Channel
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN, 4V, 46GHZ, SOT-343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4V; Transition Frequency ft:46GHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:180hFE; RF Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN, 4.1V, 42GHZ, TSFP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.1V; Transition Frequency ft:42GHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:110hFE; RF Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, RF, NPN, 2.8V, 110GHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:110GHz; Power Dissipation Pd:220mW; DC Collector Current:70mA; DC Current Gain hFE:330hFE; RF Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN, 20V, 1.2GHZ; Transistor Polarity:NPN; Collector Emitter Voltage Max:20V; Transition Frequency:1.2GHz; Power Dissipation:2.5W; Continuous Collector Current:400mA; No. of Pins:3Pins; DC Current Gain hFE Min:40hFE RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors HV8 2.6GHZ 80W NI780S-4
- V(BR)DSS: 65 volts
- Number of Transistors in the Chip: 2
- Output Power: 14 watts
- Power Gain: 15 dB
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Supplier: Qorvo
Description: Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor. The QPD1823 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
- Power Gain: 24 dB
- Operating Frequency: 1,800 to 2,400 MHz
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Supplier: Qorvo
Description: Qorvo's TQP0104 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0104 can be used in a Doherty architecture for the final stage of a base station power amplifier for small cell, microcell and active antenna
- Power Gain: 17 dB
- Operating Frequency: 0 to 4,000 MHz
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 45V 25mA 450MHz 500mW Through Hole TO-78-6
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors HV8 2GHZ 140W NI780S
- Output Power: 34 watts
- Power Gain: 17.9 dB
- Features: MOSFET, MOSFET RF Transistors, Other
- Packing Method: Tape Reel
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Supplier: Qorvo
Description: The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can
- Power Gain: 24 dB
- Operating Frequency: 0 to 4,000 MHz
- Features: Other
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Supplier: Qorvo
Description: The QPD1426 is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of large-signal gain and 70% of drain efficiency. The device's compact size and high efficiency optimize SWaP attributes, resulting in smaller
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 918089-EMX4T2R Operating Temperature Range: 150°C (TJ) Features: Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 50mA 1.5GHz 150mW Surface Mount EMT6 Package: Reel - TR Package: SOT-563, SOT-666 Mounting: Surface Mount Part
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Power BJT
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 855458-2STD1665T4 Features: Bipolar (BJT) Transistor 65 V 6 A 15 W Package: Reel - TR Family Name: 2STD1665 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and
- Package Type: SOT3
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Supplier: Richardson RFPD
Description: The MMRF5017HS-1GHZ evaluation board features NXP part MMRF5017HS and operates at 1000 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For further assistance please contact
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET Power 60W 1GHZ FET TO-270
- V(BR)DSS: 65 volts
- Number of Transistors in the Chip: 1
- Output Power: 60 watts
- Power Gain: 18 dB
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 855212-2SC5226-4-TL-E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Quantity
- Package Type: SOT3
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Supplier: Accuris
Description: SMALL-SIGNAL SCATTERING PARAMETERS OF LOW-POWER TRANSISTORS IN THE 0.2 TO 2.0-GHZ FREQUENCY RANGE
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 197541-2SC4853A-4-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 10.5dB @ 1GHz Frequency - Transition: 5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 2.6dB to 1.9dB @ 1GHz Categories: Discrete Semiconductor
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Skyworks Solutions, Inc.
Description: designed for power amplifier applications in WLAN, Zigbee®, and spread spectrum systems from 2.4–2.5 GHz. The amplifier is packaged in a QFN-16, 3 x 3 x 0.75 mm package.
- Frequency Range: 2,400 to 2,500 MHz
- Minimum Gain: 27 dB
- Maximum Gain: 27 dB
- Minimum Operating Voltage: 3.3 volts
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Supplier: ODG (Origin Data Global)
Description: 80V 5kV 50mA 100mV@1mA,20mA 1 6V 1.2V DC DIP-4 Transistor, Photovoltaic Output Optoisolators ROHS
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 10V 8GHZ 3MCP
- IC(max): 30 milliamps
- VCEO: 10 volts
- Power Gain: 10 dB
- Noise Figure: 0.9 dB
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Supplier: Skyworks Solutions, Inc.
Description: Network (WLAN) applications. The high linearity (low EVM) and high efficiency of this device makes it ideal for use in the transmit chain of WLAN access points or modems. The SKY65135-31 is fabricated using Skyworks high reliability Heterojunction Bipolar Transistor (HBT) InGaP process, which
- Frequency Range: 2,400 to 2,500 MHz
- Minimum Gain: 32 dB
- Maximum Gain: 32 dB
- Noise Figure: 5 dB
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Supplier: DigiKey
Description: RF Transistor NPN 10V 70mA 7GHz 500mW Surface Mount 4-MCP
- Polarity: NPN
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: TRANS PNP 300V 1A U4
- IC(max): 1,000 milliamps
- VCEO: 300 volts
- Output Power: 1 watts
- TJ: -65 to 200 C
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 60V 3mA 1W Surface Mount U4
- Features: Other
- Polarity: PNP
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Supplier: TE Connectivity
Description: Diameter : 5.08 MM [.2 INCH ] Socket Type : Transistor Terminal Material : Beryllium Copper Terminal Plating : Gold Industry Standards Insulator Flammability Rating : UL 94V-0 Mechanical Attachment Connector Mounting Type : Board Mount Operation/Application Circuit Application :
- Current Rating: 3 amps
- Operating Temperature: -55 to 125 C
- Number of Contacts: 8
- Contact Plating: Gold Plating
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 100V 2W 15@3A,4V 6A PNP TO-263-2 Bipolar Transistors - BJT ROHS
- IC(max): 6,000 milliamps
- VCEO: 100 volts
- fT: 3 MHz
- PD: 2,000 milliwatts
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and excellent
- Frequency Range: 450 to 6,000 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 15.5 dB
- Noise Figure: 0.65 dB
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET
- Features: MOSFET, Other
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Featured Products Top
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
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Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
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microwave signals. 2. Superior RF Transmission Performance High-stability RF transmission is (read more)
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Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® tubes and sleeves are available in several standard sizes to fit many common transistor types and can be custom ordered to your exact (read more)
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In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
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The average supercapacitor has a maximum charging voltage of between 2.5 and 2.7 V. For many applications a voltage this low isn’t particularly useful, so the common practice is to place multiple supercapacitor in series. Unfortunately, manufactured supercapacitor may have a tolerance (read more)
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Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
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Technology: MOSFET Drain-Source Breakdown Voltage: 60V Continuous Drain Current: 320mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.8nC @ 4.5V (read more)
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Commentary & analysis of week's chip news, Aug. 13-17 Siliconix says new MOSFETs offer half the on-resistance of other devices SANTA CLARA, Calif. -- Siliconix Inc. today announced it has set a new record for low on-resistance in 16- and 20-volt field-effect transistors (FETs). Siliconix said its