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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT MATCHED MONO DUAL NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS 2NPN 45V 0.025A TO78-6
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: MATCHED Monolithic Dual TRANSISTOR
- Package Type: Other
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET AF1 2GHz 60W OM780-4
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 45V 25mA 450MHz 500mW Through Hole TO-78-6
- Package Type: Other
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors HV8 2GHZ 140W NI780S
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET Power 60W 1GHZ FET TO-270
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors HV8 2.6GHZ 80W NI780S-4
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Analog Devices Inc. Win Source Part Number: 129110-MAT01GHZ Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 450MHz Transistor Polarity: 2 NPN (Dual) Matched Pair Categories: Discrete Semiconductor Products Status: Active
- Package Type: SOT3, Other
- Polarity: NPN, Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT BJTs
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT
- Transistor Type: Bipolar RF Transistors
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Description: TRANS 2NPN 45V 0.025A TO78-6
- Transistor Type: General Purpose BJT
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Supplier: Radwell International
Description: ST MICRO Semiconductors STW4N150
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Supplier: Radwell International
Description: INTERNATIONAL RECTIFIER Semiconductors IRG4PH40UDPBF
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Supplier: Radwell International
Description: TOSHIBA Semiconductors 2SA1204
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Supplier: Qorvo
Description: The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation. Lead free and RoHS compliant.
- Package Type: Other
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an over-molded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different
- Package Type: Other
- Transistor Grade / Operating Range: Military
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-3 Bipolar Transistors - BJT ROHS
- Package Type: TO-3
- Transistor Type: Bipolar RF Transistors
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Supplier: Wolfspeed
Description: Wolfspeed’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including
- Package Type: Other
- Transistor Type: HEMT
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Supplier: Acme Chip Technology Co., Limited
Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Northrop Grumman Corporation
Description: capable of operating over a wide range of pulse widths, duty cycles and bandwidths. An application-specific design can easily be tailored to your requirements through minor changes in ballast resistor value and internal matching network values. WPTB48F2729Cx 2.7-2.9 GHz Bipolar RF
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: The MMRF5017HS-1GHZ evaluation board features NXP part MMRF5017HS and operates at 1000 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For further assistance please contact
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Supplier: ODG (Origin Data Global)
Description: NPN RF TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 O systems.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: PHEMT, Other
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: PNP Silicon Digital Transistor Summary of Features Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 kO , R2 = 47 kO ) Pb-free (RoHS compliant) package Qualified according AEC Q101
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 12us/3%/50V ¦ 2.856GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: PUI - Projections Unlimited, Inc.
Description: NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
) Max 1.4 ≤1.2 Reduces signal reflection, enhances microwave transmission quality VSWR Fluctuation 0.1 ≤0.2 Avoids signal instability (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® tubes and sleeves are available in several standard sizes to fit many common transistor types and can be custom ordered to your exact (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V.
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Commentary & analysis of week's chip news, Aug. 13-17 Siliconix says new MOSFETs offer half the on-resistance of other devices SANTA CLARA, Calif. -- Siliconix Inc. today announced it has set a new record for low on-resistance in 16- and 20-volt field-effect transistors (FETs). Siliconix said its