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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 4 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4V, 2GHZ. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4V, 2GHZ, MOSFET Transistor, RF FETs, MOSFETs. This listing
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2 GHz. Search-friendly keywords include transistor, BJT, switching, amplification, 2 GHz, Bipolar Transistor, Bipolar RF Transistors. This listing supports
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 2GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing
- Noise Figure: 1.5 dB
- PD: 150 milliwatts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET AF1 2GHz 60W OM780-4
- Output Power: 6.3 watts
- Power Gain: 18.9 dB
- Features: MOSFET, MOSFET RF Transistors, Other
- Polarity: N-Channel
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN, 4V, 46GHZ, SOT-343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4V; Transition Frequency ft:46GHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:180hFE; RF Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN, 4.1V, 42GHZ, TSFP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.1V; Transition Frequency ft:42GHz; Power Dissipation Pd:200mW; DC Collector Current:50mA; DC Current Gain hFE:110hFE; RF Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, RF, NPN, 2.8V, 110GHZ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:110GHz; Power Dissipation Pd:220mW; DC Collector Current:70mA; DC Current Gain hFE:330hFE; RF Transistor RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN, 20V, 1.2GHZ; Transistor Polarity:NPN; Collector Emitter Voltage Max:20V; Transition Frequency:1.2GHz; Power Dissipation:2.5W; Continuous Collector Current:400mA; No. of Pins:3Pins; DC Current Gain hFE Min:40hFE RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors HV8 2.6GHZ 80W NI780S-4
- V(BR)DSS: 65 volts
- Number of Transistors in the Chip: 2
- Output Power: 14 watts
- Power Gain: 15 dB
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 45V 25mA 450MHz 500mW Through Hole TO-78-6
- Polarity: NPN
- Features: Other
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Supplier: Qorvo
Description: The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics
- Power Gain: 21.3 dB
- Operating Frequency: 1,200 to 1,400 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Qorvo
Description: Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can
- Power Gain: 24.7 dB
- Operating Frequency: 0 to 4,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors HV8 2GHZ 140W NI780S
- Output Power: 34 watts
- Power Gain: 17.9 dB
- Features: MOSFET, MOSFET RF Transistors, Other
- Packing Method: Tape Reel
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Power BJT
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 918089-EMX4T2R Operating Temperature Range: 150°C (TJ) Features: Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 50mA 1.5GHz 150mW Surface Mount EMT6 Package: Reel - TR Package: SOT-563, SOT-666 Mounting: Surface Mount Part
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Qorvo
Description: Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in an industry standard 3x4mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,
- Power Gain: 19 dB
- Operating Frequency: 30 to 4,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Richardson RFPD
Description: The MMRF5017HS-1GHZ evaluation board features NXP part MMRF5017HS and operates at 1000 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For further assistance please contact
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 855458-2STD1665T4 Features: Bipolar (BJT) Transistor 65 V 6 A 15 W Package: Reel - TR Family Name: 2STD1665 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and
- Package Type: SOT3
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET Power 60W 1GHZ FET TO-270
- V(BR)DSS: 65 volts
- Number of Transistors in the Chip: 1
- Output Power: 60 watts
- Power Gain: 18 dB
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 855212-2SC5226-4-TL-E Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Quantity
- Package Type: SOT3
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Supplier: Accuris
Description: SMALL-SIGNAL SCATTERING PARAMETERS OF LOW-POWER TRANSISTORS IN THE 0.2 TO 2.0-GHZ FREQUENCY RANGE
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Supplier: Qorvo
Description: Qorvo's QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications,
- Power Gain: 17 dB
- Operating Frequency: 0 to 3,200 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 197541-2SC4853A-4-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 10.5dB @ 1GHz Frequency - Transition: 5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 2.6dB to 1.9dB @ 1GHz Categories: Discrete Semiconductor
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Skyworks Solutions, Inc.
Description: designed for power amplifier applications in WLAN, Zigbee®, and spread spectrum systems from 2.4–2.5 GHz. The amplifier is packaged in a QFN-16, 3 x 3 x 0.75 mm package.
- Frequency Range: 2,400 to 2,500 MHz
- Minimum Gain: 27 dB
- Maximum Gain: 27 dB
- Minimum Operating Voltage: 3.3 volts
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 10V 8GHZ 3MCP
- IC(max): 30 milliamps
- VCEO: 10 volts
- Power Gain: 10 dB
- Noise Figure: 0.9 dB
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Supplier: ODG (Origin Data Global)
Description: 80V 5kV 50mA 100mV@1mA,20mA 1 6V 1.2V DC DIP-4 Transistor, Photovoltaic Output Optoisolators ROHS
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Supplier: Skyworks Solutions, Inc.
Description: Network (WLAN) applications. The high linearity (low EVM) and high efficiency of this device makes it ideal for use in the transmit chain of WLAN access points or modems. The SKY65135-31 is fabricated using Skyworks high reliability Heterojunction Bipolar Transistor (HBT) InGaP process, which
- Frequency Range: 2,400 to 2,500 MHz
- Minimum Gain: 32 dB
- Maximum Gain: 32 dB
- Noise Figure: 5 dB
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Supplier: DigiKey
Description: RF Transistor NPN 10V 70mA 7GHz 500mW Surface Mount 4-MCP
- Polarity: NPN
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: TRANS PNP 300V 1A U4
- IC(max): 1,000 milliamps
- VCEO: 300 volts
- Output Power: 1 watts
- TJ: -65 to 200 C
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Supplier: TE Connectivity
Description: Diameter : 5.08 MM [.2 INCH ] Socket Type : Transistor Terminal Material : Beryllium Copper Terminal Plating : Gold Industry Standards Insulator Flammability Rating : UL 94V-0 Mechanical Attachment Connector Mounting Type : Board Mount Operation/Application Circuit Application :
- Current Rating: 3 amps
- Operating Temperature: -55 to 125 C
- Number of Contacts: 8
- Contact Plating: Gold Plating
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 60V 3mA 1W Surface Mount U4
- Features: Other
- Polarity: PNP
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 100V 2W 15@3A,4V 6A PNP TO-263-2 Bipolar Transistors - BJT ROHS
- IC(max): 6,000 milliamps
- VCEO: 100 volts
- fT: 3 MHz
- PD: 2,000 milliwatts
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and excellent
- Frequency Range: 450 to 6,000 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 15.5 dB
- Noise Figure: 0.65 dB
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET
- Features: MOSFET, Other
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Featured Products Top
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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) Max 1.4 ≤1.2 Reduces signal reflection, enhances microwave transmission quality VSWR Fluctuation 0.1 ≤0.2 Avoids signal instability (read more)
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
microwave signals. 2. Superior RF Transmission Performance High-stability RF transmission is (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to (read more)
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Fujipoly® tube-shaped thermal interface covers provide an easy way to improve transistor cooling while streamlining your manufacturing process. Sarcon® tubes and sleeves are available in several standard sizes to fit many common transistor types and can be custom ordered to your exact (read more)
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In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly® offers a large assortment of box-shaped Sarcon® (read more)
Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp.
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Commentary & analysis of week's chip news, Aug. 13-17 Siliconix says new MOSFETs offer half the on-resistance of other devices SANTA CLARA, Calif. -- Siliconix Inc. today announced it has set a new record for low on-resistance in 16- and 20-volt field-effect transistors (FETs). Siliconix said its