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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -400V; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:1.5A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:15A; Power Dissipation:175W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:3MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:300mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -400V; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:150mA; Power Dissipation:500mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, Bipolar Transistor, Single Bipolar Transistors.
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 400V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 400V, Bipolar Transistor, Single Bipolar
- IC(max): 1,000 milliamps
- VCEO: 400 volts
- PD: 1,400 milliwatts
- TJ: -65 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2A, 400V. Search-friendly keywords include transistor, BJT, switching, amplification, 2A, 400V, Bipolar Transistor, Single Bipolar
- IC(max): 2,000 milliamps
- VCEO: 400 volts
- VCBO: 700 volts
- PD: 45,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12A, 400V. Search-friendly keywords include transistor, BJT, switching, amplification, 12A, 400V, Bipolar
- IC(max): 12,000 milliamps
- VCEO: 400 volts
- PD: 125,000 milliwatts
- TJ: -65 C
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Supplier: Utmel Electronic Limited
Description: NPN TRANSISTOR 200MA 400V SOT-23
- Polarity: NPN
- Features: Other
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Supplier: Richardson RFPD
Description: IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file
- Features: IGBT
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Supplier: Utmel Electronic Limited
Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7
- Features: Bipolar RF Transistors, N-Channel
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Features: Other
- Polarity: PNP
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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor, 400 V Collector to Emitter, 10 A Collector Current
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Polarity: NPN
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 55V 1.09GHZ 55KT
- IC(max): 40,000 milliamps
- VCEO: 55 volts
- Power Gain: 6.5 dB
- Operating Frequency: 1,030 to 1,090 MHz
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Description: IGBT MOD 1700V 400A 4300W
- Output Power: 4,300 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1239062-PMGD400UN Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient
- Package Type: SOT3
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors 400 Amps 300V
- Features: IGBT
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 45V 200mW 300@1mA,5V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 100 milliamps
- VCEO: 45 volts
- fT: 150 MHz
- PD: 200 milliwatts
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Supplier: ODG (Origin Data Global)
Description: 30V 21.8A 7mΩ@10V,21.8A 3.25W 2V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1239107-PMR400UN Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Microchip Technology, Inc.
Description: Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037911-FCPF400N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 31W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status:
- V(BR)DSS: 600 volts
- PD: 31,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Richardson RFPD
Description: The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for
- Power Gain: 16 dB
- Output Power: 400 watts
- Operating Frequency: 1,200 to 1,400 MHz
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770197-BLF8G20LS-400PVJ Packaging: Reel package Package: SOT-1242B Frequency: 1.81GHz ~ 1.88GHz Current - Test: 3.4A Gain: 19dB Transistor Type: LDMOS (Dual), Common Source Voltage - Test: 28V Power - Output: 95W Family Name:
- Output Power: 95 watts
- Power Gain: 19 dB
- Operating Frequency: 1,810 to 1,880 MHz
- Features: MOSFET, MOSFET RF Transistors, Other
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Supplier: Nexperia B.V.
Description: NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 400 V) Applications LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Microchip Technology, Inc.
Description: Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching
- Features: MOSFET
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Supplier: Integra Technologies, Inc.
Description: IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 400 watts of
- Power Gain: 11 dB
- Output Power: 400 watts
- Operating Frequency: 2,700 to 2,900 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Utmel Electronic Limited
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
- V(BR)DSS: 400 volts
- rDS(on): 3.6 ohms
- PD: 36,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 400W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequencies ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed
- Power Gain: 16 dB
- Output Power: 400 watts
- Operating Frequency: 1,030 to 1,090 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Nexperia B.V.
Description: PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High
- Features: Other
- Polarity: PNP
- Package Type: SOT89
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Supplier: ROHM Semiconductor USA, LLC
Description: UMH37N is the digital transistor for Muting that integrates two DTC914TUB chips in a SOT-363 package.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT MODULE, 2IN1, 650V/400A
- Output Power: 1.14 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Suitable for the low frequency amplifier.
- PD: 500 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: PMX400UP/SOT8013/DFN0603-3
- V(BR)DSS: 20 volts
- IDSS: 0.8999999999999999 milliamps
- Features: MOSFET, Other
- Packing Method: Tape Reel
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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