-
Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:300mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -400V; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:1.5A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:- RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:15A; Power Dissipation:175W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:3MHz RoHS Compliant: Yes
-
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V. Search-friendly keywords include transistor, BJT, switching, amplification, 400V, Bipolar Transistor, Single Bipolar Transistors.
- Features: Bipolar RF Transistors
-
Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:500mA; Power Dissipation:2W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:50MHz RoHS Compliant: Yes
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10A, 400V. Search-friendly keywords include transistor, BJT, switching, amplification, 10A, 400V,
- Features: Bipolar RF Transistors
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 400V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 400V, Bipolar Transistor, Single Bipolar
- IC(max): 1,000 milliamps
- VCEO: 400 volts
- PD: 1,400 milliwatts
- TJ: -65 C
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12A, 400V. Search-friendly keywords include transistor, BJT, switching, amplification, 12A, 400V, Bipolar
- IC(max): 12,000 milliamps
- VCEO: 400 volts
- PD: 125,000 milliwatts
- TJ: -65 C
-
Supplier: Utmel Electronic Limited
Description: NPN TRANSISTOR 200MA 400V SOT-23
- Polarity: NPN
- Features: Other
-
Supplier: Richardson RFPD
Description: IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file
- Features: IGBT
-
Supplier: Utmel Electronic Limited
Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7
- Features: Bipolar RF Transistors, N-Channel
-
Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor, 400 V Collector to Emitter, 10 A Collector Current
-
Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Polarity: NPN
- Features: Other
-
Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 55V 1.09GHZ 55KT
- IC(max): 40,000 milliamps
- VCEO: 55 volts
- Power Gain: 6.5 dB
- Operating Frequency: 1,030 to 1,090 MHz
-
Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Features: Other
- Polarity: PNP
-
Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1239062-PMGD400UN Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient
- Package Type: SOT3
-
Description: IGBT MOD 1700V 400A 4300W
- Output Power: 4,300 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 45V 200mW 300@1mA,5V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 100 milliamps
- VCEO: 45 volts
- fT: 150 MHz
- PD: 200 milliwatts
-
Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors 400 Amps 300V
- Features: IGBT
-
Supplier: ODG (Origin Data Global)
Description: 30V 21.8A 7mΩ@10V,21.8A 3.25W 2V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
-
Supplier: Microchip Technology, Inc.
Description: Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is
-
Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1239107-PMR400UN Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
- Package Type: SOT3
-
Supplier: Richardson RFPD
Description: This 107 W asymmetrical Doherty RF power LDMOS transistor is designedfor cellular base station applications covering the frequency range of 720 to960 MHz.
- Power Gain: 17.9 dB
- Output Power: 107 watts
- Operating Frequency: 720 to 960 MHz
- Features: Other
-
Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1037911-FCPF400N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 31W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status:
- V(BR)DSS: 600 volts
- PD: 31,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
-
Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770197-BLF8G20LS-400PVJ Packaging: Reel package Package: SOT-1242B Frequency: 1.81GHz ~ 1.88GHz Current - Test: 3.4A Gain: 19dB Transistor Type: LDMOS (Dual), Common Source Voltage - Test: 28V Power - Output: 95W Family Name:
- Output Power: 95 watts
- Power Gain: 19 dB
- Operating Frequency: 1,810 to 1,880 MHz
- Features: MOSFET, MOSFET RF Transistors, Other
-
Supplier: Nexperia B.V.
Description: NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 400 V) Applications LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front
- Features: Other
- Package Type: SOT23
-
Supplier: Microchip Technology, Inc.
Description: Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching
- Features: MOSFET
-
Supplier: Integra Technologies, Inc.
Description: IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 400 watts of
- Power Gain: 11 dB
- Output Power: 400 watts
- Operating Frequency: 2,700 to 2,900 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
-
Supplier: Utmel Electronic Limited
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
- V(BR)DSS: 400 volts
- rDS(on): 3.6 ohms
- PD: 36,000 milliwatts
- TJ: -55 to 150 C
-
Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 400W @ 128us/2%/50V ■ 1.030GHz and 1.090GHz Operating Frequencies ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed
- Power Gain: 16 dB
- Output Power: 400 watts
- Operating Frequency: 1,030 to 1,090 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
-
Supplier: Nexperia B.V.
Description: PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High
- Features: Other
- Package Type: SOT89
-
Supplier: Acme Chip Technology Co., Limited
Description: IGBT MODULE, 2IN1, 1200V/400A
- Output Power: 1.92 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
-
Supplier: ROHM Semiconductor USA, LLC
Description: Suitable for the low frequency amplifier.
- PD: 500 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
-
Supplier: ROHM Semiconductor USA, LLC
Description: UMH37N is the digital transistor for Muting that integrates two DTC914TUB chips in a SOT-363 package.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
-
Supplier: Acme Chip Technology Co., Limited
Description: PMX400UP/SOT8013/DFN0603-3
- V(BR)DSS: 20 volts
- IDSS: 0.8999999999999999 milliamps
- Features: MOSFET, Other
- Packing Method: Tape Reel
Find Suppliers by Category Top
Featured Products Top
-
Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
and a smaller form factor while maintaining the system's low cost. With several product families, such as the CoolGaN Transistors 650 V G5, CoolGaN Transistors 700 V G5, CoolGaN Transistor Dual 650 V G5, and CoolGaN Drive HB 600 V G5, these power devices deliver the highest efficiency with high (read more)
Browse Transistors Datasheets for DigiKey -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
Rated AC Voltage 0~380V AC Rated DC Voltage 0~540V DC Structural Design Partition wiring, multi-layer shielded (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
The average supercapacitor has a maximum charging voltage of between 2.5 and 2.7 V. For many applications a voltage this low isn’t particularly useful, so the common practice is to place multiple supercapacitor in series. Unfortunately, manufactured supercapacitor may have a tolerance (read more)
Browse Transistors Datasheets for Advanced Linear Devices, Inc. -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V.