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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Microchip Technology, Inc.
Description: Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The
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Supplier: Microchip Technology, Inc.
Description: Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - Pre-Biased ARRAY TRANSISTOR SOT-26
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - Pre-Biased ARRAY TRANSISTOR SOT-363
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 55V 1.09GHZ 55KT
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 400W @ 128us/2%/50V ¦ 1.030GHz and 1.090GHz Operating Frequencies ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 400W @ 300us/10%/48V ¦ 2.4-2.9GHz Instantaneous Operating Frequency Range ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770197-BLF8G20LS-400 PVJ Packaging: Reel package Package: SOT-1242B Frequency: 1.81GHz ~ 1.88GHz Current - Test: 3.4A Gain: 19dB Transistor Type: LDMOS (Dual), Common Source Voltage - Test: 28V Power
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770186-BLF8G09LS-400 PWJ Packaging: Reel package Package: SOT-1242B Frequency: 718.5MHz ~ 725.5MHz Current - Test: 3.4A Gain: 20.6dB Transistor Type: LDMOS (Dual), Common Source Voltage - Test: 28V
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770185-BLF8G09LS-400 PGWJ Packaging: Reel package Package: SOT-1242C Frequency: 718.5MHz ~ 725.5MHz Current - Test: 3.4A Gain: 20.6dB Transistor Type: LDMOS (Dual), Common Source Voltage - Test: 28V
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 30V 21.8A 7mO@10V,21.8A 3.25W 2V@250uA 1 N-Channel TO-252-2 MOSFETs ROHS
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Supplier: Utmel Electronic Limited
Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS3-7
- Polarity: N-Channel
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: IGBT Transistors / Modules ROHS
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Supplier: Rochester Electronics
Description: Insulated Gate Bipolar Transistor Module
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Bipolar NPN Transistor, 1A 25V
- Package Type: TO-92, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 45V 200mW 300@1mA,5V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 20V 1A 200mO@4.5V 1 N-Channel SC75-3 MOSFETs ROHS
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Supplier: Rochester Electronics
Description: FZ400R17 - Insulated Gate Bipolar Transistor Module
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 400 V) Applications LED driver for LED chain
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: Richardson RFPD
Description: The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30% duty factor across the 1200 to 1400 MHz band. The transistor has internal
- Package Type: Other
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Supplier: Acme Chip Technology Co., Limited
Description: TRANSISTOR BIPO 55AW-1
- Transistor Type: General Purpose BJT
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Supplier: Radwell International
Description: TRANSISTOR 400AMP 1200V. FREE 2 YEAR RADWELL WARRANTY
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Description: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Package Type: Other
- Polarity: NPN
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: Active Bias Controller for various applications like cellular and cordless phones, DECT, WLAN, PHS and RF modems. The controllers are stabilizing the bias current for NPN transistors and FET’s Summary of Features Stable bias current supply, even at low battery
- Package Type: Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Richardson RFPD
Description: IGBT Module. VCE(Sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file
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Supplier: ROHM Semiconductor GmbH
Description: Suitable for the low frequency amplifier.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Littelfuse, Inc.
Description: NPT IGBTs feature square RBSOA and 10 us short circuit withstand capability. They have positive temp coefficient of Vce(sat), ideal for paralleling. They are preferred for motor drive applications. These IGBTs enable the use of a single device in systems whose circuits previously used multiple,
- Package Type: Other
- Transistor Type: IGBT
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Supplier: DigiKey
Description: IGBT Module Half Bridge 1700V 400A 4300W Chassis Mount Module
- Package Type: Other
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Description: IGBT MOD 1700V 400A 4300W
- Packing Method: Bulk Pack, Other
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Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
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Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
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