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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 500V; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:50A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V. Search-friendly keywords include transistor, BJT, switching, amplification, 500V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer
- IC(max): 300 milliamps
- PD: 2 milliwatts
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, RF FETs, MOSFETs. This listing
- PD: 57,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20A, 500V. Search-friendly keywords include transistor, BJT, switching, amplification, 20A, 500V, Bipolar Transistor,
- IC(max): 20,000 milliamps
- VCEO: 500 volts
- PD: 125,000 milliwatts
- TJ: -65 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power Bipolar Transistor, 7A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3F-A1, SC-92, FULL PACK-3 Product overview: 2SC3974 from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- IC(max): 7,000 milliamps
- VCEO: 500 volts
- PD: 3,000 milliwatts
- Features: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP HighV 500V
- VCEO: 500 volts
- IC(max): 150 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, 300V, 500mA, 500mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:500mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, 500V, 150mA, 500mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:500V; Continuous Collector Current:150mA; Power Dissipation:500mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: transistor bipolar Darlington 500v to 204e
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 500V 1A, TO-220
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Supplier: Newark, An Avnet Company
Description: DARLINGTON TRANSISTOR, NPN, 500V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:15A; Power Dissipation:180W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 2N3906 Transistor
- Features: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 500mA 30V PNP
- VCEO: 25 volts
- IC(max): 500 milliamps
- PD: 300 milliwatts
- TJ: -55 to 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Cree/Wolfspeed Win Source Part Number: 890515-PXFC192207NF-V1-R500 Features: RF Mosfet Package: Reel - TR Family Name: PXFC192207 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors VHV6 500W 50V NI780H
- V(BR)DSS: 110 volts
- Number of Transistors in the Chip: 1
- Output Power: 500 watts
- Power Gain: 19.7 dB
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 55V 1.15GHZ 55KT
- IC(max): 40,000 milliamps
- VCEO: 55 volts
- Power Gain: 6 dB
- Operating Frequency: 1,025 to 1,150 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017226-AOT500 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status:
- V(BR)DSS: 33 volts
- PD: 115,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: NEC Win Source Part Number: 389513-UPA500T Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Supplier: ROHM Semiconductor USA, LLC
Description: DTB114EC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA05 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 60 V AEC-Q101 qualified Applications Intended for telephony and professional communication equipment.
- hfe: 100
- VCEO: -60 volts
- IC(max): -500 milliamps
- PD: 200 milliwatts
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Supplier: ROHM Semiconductor USA, LLC
Description: DTD123EC is an digital transistor (Resistor built-in type transistor). The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA06 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 80 V AEC-Q101 qualified Applications Intended for telephony and professional communication equipment.
- hfe: 100
- VCEO: -80 volts
- IC(max): -500 milliamps
- PD: 200 milliwatts
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Supplier: Nexperia B.V.
Description: NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMSTA56 Features and benefits High current (max. 500 mA) Very small SMD plastic package Collector-emitter voltage: 80 V Applications General purpose
- hfe: 50
- VCEO: 80 volts
- IC(max): 500 milliamps
- PD: 200 milliwatts
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Supplier: Nexperia B.V.
Description: PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat transistor and resistor-equipped transistor in one package Low threshold voltage (<1 V)
- Polarity: NPN, PNP
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 8us/1%/50V; (PAVG = 5W) ■ 2.998GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With
- Power Gain: 12 dB
- Operating Frequency: 2,998 MHz
- Output Power: 500 watts
- Features: Bipolar RF Transistors, Other
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Supplier: ODG (Origin Data Global)
Description: SOP-16 Transistor, Photovoltaic Output Optoisolators ROHS
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Supplier: ROHM Semiconductor USA, LLC
Description: DTD123YKFRA is the high reliability Automotive transistor, suitable for inverter and interface, driver.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SCR502EBHZG is a bipolar transistor with large collector current, suitable for low frequency amplifier. It is a highly reliable product for automotive.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Panasonic Electronic Components Win Source Part Number: 036070-UNR32A500L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status:
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Richardson RFPD
Description: The 0912GN-500LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 500 Watts of pulsed RF output power at 450μs pulse width, 35% duty factor across the 960 to 1215 MHz band. The transistor has internal pre-match for
- Power Gain: 16.5 dB
- Output Power: 500 watts
- Operating Frequency: 960 to 1,215 MHz
- Features: Other
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Supplier: Acme Chip Technology Co., Limited
Description: 1200V SILICON CARBIDE MOSFET
- V(BR)DSS: 1,200 volts
- IDSS: 6,300 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under the specified pulsed conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak
- Power Gain: 7.8 dB
- Operating Frequency: 960 to 1,215 MHz
- Output Power: 500 watts
- Features: Bipolar RF Transistors, Other
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,
- Features: MOSFET
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Description: RF MOSFET 150V STAC177B
- Features: MOSFET, Other
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