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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 2N3906 Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 2N3904 Transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors Darlington Array ULN2803A
- Transistor Type: Darlington
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 12us/3%/50V ¦ 2.856GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 8us/1%/50V; (PAVG = 5W) ¦ 2.998GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP HighV 500V
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: Available in a bolt down flanged version as IGN2729M500 or in a solder mount earless version IGN2729M500S. IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD1012S500HV is designed for Avionics DME systems operating at 1025-1150. Operating at 10ìs, 1% pulse conditions this LDMOS FET device supplies a minimum of 500 watts of power across the instantaneous operating bandwidth of 1025-1150. All
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 55V 1.15GHZ 55KT
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 75V 1.215GHZ 55ST
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017226-AOT500 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive
- Package Type: TO-220, SOT3, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 500mA 30V PNP
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770219-BLL6H1214-500 ,112 Packaging: Tray Package: SOT539A Frequency: 1.2GHz ~ 1.4GHz Current - Test: 150mA Gain: 17dB Transistor Type: LDMOS (Dual), Common Source Voltage - Test: 50V Power - Output
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770047-BLA6H0912-500 ,112 Packaging: Bulk Package: SOT634A Current Rating: 54A Frequency: 960MHz ~ 1.22GHz Current - Test: 100mA Gain: 17dB Transistor Type: LDMOS Voltage - Test: 50V Power
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors VHV6 500W 50V NI780H
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Microchip Technology, Inc.
Description: high voltage DC SOA. Most SMPS-type MOSFETs overstate SOA capability at high voltage on the datasheets. Above ~30V and DC conditions, SOA drops faster than is indicated by Power Dissipation (PD) limited operation. For pulsed loads (t <10 ms), there is generally no problem using a standard
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: The ARF family of RF power MOSFETs is optimized for applications requiring frequencies as high as 150 MHz and operating voltages as high as 400V. Historically, RF power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining Microchip’s high
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: IGBT Transistors / Modules ROHS
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Supplier: Rochester Electronics
Description: Dual Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: ODG (Origin Data Global)
Description: SO-16 Transistor, Photovoltaic Output Optoisolators ROHS
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Supplier: Nexperia B.V.
Description: 500 mA PNP general-purpose transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits General-purpose transistor Two current gain selections Low package
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Automotive
- Transistor Type: General Purpose BJT
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Supplier: Nexperia B.V.
Description: 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits General-purpose transistor Two current gain selections Low package
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Automotive
- Transistor Type: General Purpose BJT
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 100V 25W 120@500mA,10V 2A NPN SOT-669 Bipolar Transistors - BJT ROHS
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: DTB114EC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: Radwell International
Description: TRANSISTOR, POWER TRANSISTOR, 500 V, 10 A, THROUGH HOLE, SC-65. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: PNP
- Transistor Type: General Purpose BJT
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) TO-247 Tube
- Polarity: NPN
- Transistor Type: Darlington
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Description: DUAL BIPOLAR TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Acme Chip Technology Co., Limited
Description: NPN POWER TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 1A, 20V, PNP, SC-73
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Featured Products Top
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo