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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 500V; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:50A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V. Search-friendly keywords include transistor, BJT, switching, amplification, 500V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer
- IC(max): 300 milliamps
- PD: 2 milliwatts
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, MOSFET Transistor, RF FETs, MOSFETs. This listing
- PD: 57,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20A, 500V. Search-friendly keywords include transistor, BJT, switching, amplification, 20A, 500V, Bipolar Transistor,
- IC(max): 20,000 milliamps
- VCEO: 500 volts
- PD: 125,000 milliwatts
- TJ: -65 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5A, 500V. Search-friendly keywords include transistor, BJT, switching, amplification, 5A, 500V, Bipolar Transistor, Single Bipolar
- IC(max): 5,000 milliamps
- VCEO: 500 volts
- VCBO: 1,000 volts
- PD: 36,000 milliwatts
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP HighV 500V
- VCEO: 500 volts
- IC(max): 150 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, 300V, 500mA, 500mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:500mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, 500V, 150mA, 500mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:500V; Continuous Collector Current:150mA; Power Dissipation:500mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: transistor bipolar Darlington 500v to 204e
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 500V 1A, TO-220
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Supplier: Newark, An Avnet Company
Description: DARLINGTON TRANSISTOR, NPN, 500V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:15A; Power Dissipation:180W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 2N3906 Transistor
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Cree/Wolfspeed Win Source Part Number: 890515-PXFC192207NF-V1-R500 Features: RF Mosfet Package: Reel - TR Family Name: PXFC192207 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 500mA 30V PNP
- VCEO: 25 volts
- IC(max): 500 milliamps
- PD: 300 milliwatts
- TJ: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors VHV6 500W 50V NI780H
- V(BR)DSS: 110 volts
- Number of Transistors in the Chip: 1
- Output Power: 500 watts
- Power Gain: 19.7 dB
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Supplier: Win Source Electronics
Description: Manufacturer: NEC Win Source Part Number: 389513-UPA500T Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Supplier: ROHM Semiconductor USA, LLC
Description: DTB114EC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: Win Source Electronics
Description: Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017226-AOT500 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status:
- V(BR)DSS: 33 volts
- PD: 115,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Nexperia B.V.
Description: PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA05 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 60 V AEC-Q101 qualified Applications Intended for telephony and professional communication equipment.
- VCEO: -60 volts
- IC(max): -500 milliamps
- PD: 200 milliwatts
- TJ: 150 C
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 55V 1.15GHZ 55KT
- IC(max): 40,000 milliamps
- VCEO: 55 volts
- Power Gain: 6 dB
- Operating Frequency: 1,025 to 1,150 MHz
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Supplier: Nexperia B.V.
Description: PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA06 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 80 V AEC-Q101 qualified Applications Intended for telephony and professional communication equipment.
- VCEO: -80 volts
- IC(max): -500 milliamps
- PD: 200 milliwatts
- TJ: 150 C
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Supplier: Nexperia B.V.
Description: NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMSTA56 Features and benefits High current (max. 500 mA) Very small SMD plastic package Collector-emitter voltage: 80 V Applications General purpose
- VCEO: 80 volts
- IC(max): 500 milliamps
- PD: 200 milliwatts
- TJ: 150 C
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Supplier: ROHM Semiconductor USA, LLC
Description: DTD123EC is an digital transistor (Resistor built-in type transistor). The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat transistor and resistor-equipped transistor in one package Low threshold voltage (<1 V)
- Features: Other
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Supplier: Richardson RFPD
Description: L-BAND-AVIONICS-500W TRANSISTOR
- Power Gain: 18.5 dB
- Output Power: 500 watts
- Operating Frequency: 1,030 to 1,090 MHz
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,
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Supplier: ODG (Origin Data Global)
Description: SOP-16 Transistor, Photovoltaic Output Optoisolators ROHS
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Supplier: ROHM Semiconductor USA, LLC
Description: DTD123YKFRA is the high reliability Automotive transistor, suitable for inverter and interface, driver.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 12us/3%/50V ■ 2.856GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With
- Power Gain: 11.8 dB
- Operating Frequency: 2,856 MHz
- Output Power: 500 watts
- Features: Bipolar RF Transistors, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SCR502EBHZG is a bipolar transistor with large collector current, suitable for low frequency amplifier. It is a highly reliable product for automotive.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,
- Features: MOSFET
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Description: RF MOSFET 150V STAC177B
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Panasonic Electronic Components Win Source Part Number: 036070-UNR32A500L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status:
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Acme Chip Technology Co., Limited
Description: 1200V SILICON CARBIDE MOSFET
- V(BR)DSS: 1,200 volts
- IDSS: 6,300 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under the specified pulsed conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak
- Power Gain: 7.8 dB
- Operating Frequency: 960 to 1,215 MHz
- Output Power: 500 watts
- Features: Bipolar RF Transistors, Other
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