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Supplier: Richardson RFPD
Description: 900 MHz 802.11g 1W Amplifier
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65126-21 is being discontinued and is not recommended for new designs. The SKY65126-21 is a fully matched 20-pin, lead-free, surface mount, Multichip Module (MCM) Power Amplifier (PA) designed for WCDMA/CDMA/TDMA/GSM/LTE radio, repeaters, transmitters, mobile radios and
- Frequency Range: 800 to 900 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 24.5 dBm
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY66008-11 is being discontinued and is not recommended for new designs. The suggested replacement are SKY66005-11, SKY66185-11 The SKY66008-11 linear Power Amplifier (PA) is a fully matched surface mount module developed for WCDMA applications operating from 925 to 960
- Frequency Range: 900 to 990 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 19 dBm
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Supplier: Skyworks Solutions, Inc.
Description: SKY66298-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G LTE small cell base stations operating from 900 to 990 MHz. The active biasing circuitry is
- Frequency Range: 925 to 960 MHz
- Minimum Gain: 34 dB
- Maximum Gain: 34 dB
- Output Power( P1dB): 28 dBm
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Supplier: Skyworks Solutions, Inc.
Description: The SKY66295-21 is a high-efficiency fully input / output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G LTE small cell base stations operating from 800 to 900 MHz. The active biasing circuitry is
- Frequency Range: 850 to 900 MHz
- Minimum Gain: 34.5 dB
- Maximum Gain: 34.5 dB
- Output Power( P1dB): 28 dBm
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 10MHZ, 900MHZ. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part, 10MHZ, 900MHZ. This listing supports clearer product
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: AMPLIFIER SMT LNA 900MHZ 8SOIC Product overview: MAALSS0043 from M/A-Com Technology Solutions is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets,
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: CDMA LOW NOISE AMPLIFIER/MIXER 900MHz DOWNCONVERTER Product overview: RF2870 from RF Micro Devices is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets,
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800MHZ, 900MHZ. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part, 800MHZ, 900MHZ. This listing supports clearer
- Features: Other
- Standards: RoHS Compliant
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Supplier: Fairview Microwave Inc.
Description: manufactured with SMA connectors. Our SMA wideband / broadband amplifier design has a 13 dB typical gain. Fairview Microwave RF medium power wide-band amplifier part number FMAM4031 is rated with a P1dB of 29.5 dBm. This radio frequency medium power broad / wide band
- Frequency Range: 10 to 6,000 MHz
- Maximum Gain: 13 dB
- Output Power( P1dB): 29.500000000000004 dBm
- Amplifier Type: Power Amplifier
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Supplier: Texas Instruments
Description: 900 MHz Fully Differential Amplifier with Output Limiting Clamp 8-SO PowerPAD -40 to 125
- Operating Temperature: -40 to 125 C
- Slew Rate (SR): 2,300 V/µs
- Supply Voltage (VS): 4.5 to 12 volts
- Device Type: Differential Amplifiers
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Supplier: Richardson RFPD
Description: 900-1000 MHz 30W POWER AMPLIFIER. WPA09-5055G integrates WanTcom proprietary power amplifier technology, high frequency micro electronic assembly techniques, and high reliability design to realize optimum power added efficiency, wideband, high
- Frequency Range: 900 to 1,000 MHz
- Maximum Gain: 50 dB
- Minimum Operating Voltage: 28 volts
- Maximum Operating Voltage: 28 volts
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Supplier: Qorvo
Description: amplifier in GSM hand-held equipment in 900 MHz band and other applications in the UHF bands. An analog on-board power controller provides over 70 dB range of gain adjustment. This control also allows for power down with a voltage equal to the logic “Low” to set
- Open-Loop Gain (AVOL): 33.8 dB
- Supply Voltage (VS): 3.8 volts
- Bandwidth: 100 to 1,000 MHz
- Features: Other, Power Operational Amplifiers
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Supplier: Newark, An Avnet Company
Description: IC, POWER AMP, 900MHZ, 20TSSOP; Supply Voltage Range:2.7V to 5.5V; No. of Pins:20Pins; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; Phthalates Compliant:To BeRoHS Compliant: Yes
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Supplier: Wolfspeed
Description: The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package. Features
- Power Gain: 20 dB
- Output Power: 12 watts
- Operating Frequency: 900 to 2,700 MHz
- Features: MOSFET, Other
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Supplier: Visual Sound, Inc.
Description: 10dB gain Remote 12Vdc power for the antenna amplifier is provided by a Shure U4 Receiver or a Shure UA840 Antenna Distribution System through the connecting coaxial cable Can be mounted on a microphone stand, suspended from the ceiling, or mounted to a wall using the integrated swivel
- Features: Wireless Microphone
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Supplier: DigiKey
Description: RF Amplifier IC General Purpose 900MHz ~ 11GHz
- Frequency Range: 900 to 11,000 MHz
- Minimum Gain: 16.5 dB
- Maximum Gain: 16.5 dB
- Output Power( P1dB): 4.999999999999999 dBm
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Supplier: VAST STOCK CO., LIMITED
Description: Operational Amplifiers - Op Amps 900-MHz, High Power Output, Current Feedback Amplifier 8-SO PowerPAD -40 to 85
- Features: Operational Amplifiers, Other
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Supplier: VAST STOCK CO., LIMITED
Description: High Speed Operational Amplifiers 900-MHz, High Power Output, Current Feedback Amplifier 16-VQFN -40 to 85
- Features: Operational Amplifiers, Other
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Supplier: Newark, An Avnet Company
Description: OP AMP, 0.9MHZ, 9V/US, 1000UV, TO220-11; No. of Amplifiers:1 Amplifier; Bandwidth:900kHz; Slew Rate:9V/µs; Supply Voltage Range:8V to 60V; Amplifier Case Style:TO-220; No. of Pins:11Pins; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes
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Supplier: Newport MKS
Description: amplifiers, enabling you to cancel out laser-intensity noise in any experimental setup that produces either a reference signal or balanced optical signals. M4 and 8-32 mounting threads. An external power supply, which must be purchased separately, is required – we recommend our
- Receiver Rise Time: 0.8 ns
- Bandwidth: 0.04 to 800 MHz
- Features: Other
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Supplier: Newport MKS
Description: lock-in amplifiers, enabling you to cancel out laser-intensity noise in any experimental setup that produces either a reference signal or balanced optical signals. M4 and 8-32 mounting threads. An external power supply, which must be purchased separately, is required – we recommend our
- Receiver Rise Time: 0.8 ns
- Bandwidth: 0.04 to 800 MHz
- Features: Other
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Supplier: Newport MKS
Description: useful input range from 1 pW to 10 mW. M4 mounting thread. An external power supply or two 9-V batteries are required. Two batteries are included with the product, but a power supply and cables must be purchased separately. We recommend our power supply with either or
- Receiver Rise Time: 80 ns
- Bandwidth: 0.15 to 10 MHz
- Operating Temperature: 50 to 95 F
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: Amplifier IC Development Tools For NE664M04-A Power at 900 MHz
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Supplier: ValueTronics International, Inc.
Description: The 10W1000 is a 1 GHz 10 Watt RF Amplifier from Amplifier Research. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Power output: 10 W (1 to
- Frequency Range: 1,000 MHz
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed avionics pallet part number IBP1011L800 is designed for L-Band avionics systems operating at 1030 MHz. While operating in class C mode under Mode S-ELM pulse burst conditions at VCC = 48V, this amplifier supplies a minimum of 900 watts of peak pulse
- Frequency Range: 1,030 MHz
- Minimum Gain: 9.7 dB
- Maximum Gain: 9.7 dB
- Output Power( P1dB): 59.731278535996985 dBm
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Supplier: ValueTronics International, Inc.
Description: Three-year Standard Warranty The Com-Power AB-900A is a broadband, linearly polarized Biconical Dipole Antenna, operating over the frequency range of 25 MHz to 300 MHz. It can be used as either a receiving antenna (for EMI measurements) or as a transmitting antenna (for immunity
- Primary Frequency Range: 300 MHz
- Technology Type: Biconical / Discone
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Supplier: Tele-Communication, Inc.
Description: Clarity CE225 Clarity Portable Telephone Amplifier Clarity Power technology Compact, portable design is great for home use, office use or travel Amplifies incoming sounds up to 28 decibels Connects easily between the handset and base of a corded telephone (Dial pad must be on the base)
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 1108190-TLC271ACPSR Packaging: Reel - TR Number of Circuits: 1 Mounting: SMD (SMT) Amplifier Type: General Purpose Slew Rate: 5.3 V/μs Current - Input Bias: 0.7pA Voltage - Input Offset: 900μV Categories: Integrated Circuits
- Supply Voltage (VS): 3 to 16 volts
- Supply Current (IS): 0.95 milliamps
- Input Offset Voltage (VOS): 0.8999999999999999 millivolts
- Input Bias Current (IBIAS): 0.0000007 µA
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 043079-THS3095D Packaging: Tube/Rail Number of Circuits: 1 Mounting: SMD (SMT) -3db Bandwidth: 235MHz Amplifier Type: Current Feedback Slew Rate: 7300 V/μs Current - Input Bias: 4μA Voltage - Input Offset: 900μV Categories:
- Supply Voltage (VS): 10 to 30 volts
- Supply Current (IS): 9.5 milliamps
- Input Offset Voltage (VOS): 0.8999999999999999 millivolts
- Input Bias Current (IBIAS): 4 µA
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 145049-TLE2062CD Packaging: Reel - TR Number of Circuits: 2 Mounting: SMD (SMT) Amplifier Type: J-FET Slew Rate: 3.4 V/μs Current - Input Bias: 4pA Voltage - Input Offset: 900μV Categories: Integrated Circuits Status: Active
- Supply Voltage (VS): 7 to 36 volts
- Supply Current (IS): 0.625 milliamps
- Input Offset Voltage (VOS): 0.8999999999999999 millivolts
- Input Bias Current (IBIAS): 0.000004 µA
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 1269309-TLE2062ID Packaging: Tube Mounting Style: SMD Supply Current: 625μA Amplifier Type: J-FET Slew Rate: 3.4V/μs Gain Bandwidth Product: 2MHz Current - Input Bias: 4pA Voltage - Input Offset: 900μV Current - Output / Channel:
- Supply Voltage (VS): 7 to 36 volts
- Supply Current (IS): 0.625 milliamps
- Input Offset Voltage (VOS): 0.8999999999999999 millivolts
- Input Bias Current (IBIAS): 0.000004 µA
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Supplier: DigiKey
Description: 900-MHZ HIGH-POWER-OUTPUT CURREN
- Supply Current (IS): 16.799999999999997 milliamps
- Slew Rate (SR): 8,000 V/µs
- Operating Temperature: -40 to 85 C
- Features: Buffer, Instrumentation Amplifiers, Operational Amplifiers, Other
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Supplier: RIGOL Technologies, Inc.
Description: high-order filters and amplifiers Type-C power interface: Enables the use of mobile power banks for measurement functionality on the go
- Maximum Input Channels: 2
- Minimum Frequency Range: 150 MHz
- Maximum Frequency Range: 150 MHz
- Frequency Resolution: 16 bits
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Supplier: Electro Optical Components, Inc.
Description: amplifier transimpedance is 2 x 104 V/A resulting in a maximum conversion gain of 2 x 104 V/W at 1550 nm for the InGaAs model. The sophisticated DC coupled multi-stage amplifier design allows measurements from DC to a maximum bandwidth of 200 MHz corresponding to a minimum
- Spectral Response: 320 to 1,700 nm
- Supply Voltage: 15 volts
- Module Type: PIN Photodiode
- Output Type: Voltage Output
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The QPL1840 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 17 dB of gain and low noise from 5 MHz to 1800 MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as (read more)
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45 MHz - 1794 MHz, 34V, 18W, 23dB Gain High Output Power Doubler CATV Hybrid The QPA3316 is a Hybrid Power Doubler amplifier module,with 23 dB of gain. The part employs GaAs/GaN die and has an operational bandwidth from 45 MHz to 1794 MHz. It provides excellent (read more)
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experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
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SKY66318-11, a new addition to our family of high-efficiency power amplifiers (PA) designed for the stringent (read more)
Browse Power Amplifiers Datasheets for Skyworks Solutions, Inc. -
the final RF amplifier in GSM hand-held equipment in 900 MHz band and other applications in the UHF bands. An analog on-board power controller provides over 70 dB range of gain adjustment. This control also allows for power down with a voltage equal to the logic “Low” to set the device (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
The AMM-7473PC is a high-linearity, low noise distributed amplifier that provides +25dBm output power across a 400 MHz to 26.5GHz band and up to 16GHz gain. Ideal for radar and satellite communications, the amplifier can serve either as a linear signal amplifier or as a saturated driver amplifier for H- or S-diode mixers. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
Model Number:UIYDC8888A170T180 Frequency Range:170-180MHz Insertion Loss:0.25dB Max. Isolation:20.0dB Min. VSWR:1.2 Max. Average Power:1500W Temperature Range:+20 ~ +60°C Connector Type:TAB 170-180MHz High Power Circulator Typical (read more)
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The RF product Model 5o104546023002500NK is a high-power, high-reliability protection component designed for the 2300~2500MHz high-frequency band. Leveraging the brand's core technology, it can be expanded to cover 10MHz~50GHz and withstand up to 30KW power, tailored for (read more)
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The QPL1842 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 25dB of gain and low noise from 5MHz to 850MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as Fiber to The Home (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
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A 900 MHz, 200 W silicon LDMOS power amplifier using integrated passive devices in a new over-molded plastic package
The realization of a 900 MHz power amplifier with integrated passive devices in a new over-molded plastic package has been presented.
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Device and technology evolution for Si-based RF integrated circuits
[156] H. Asano, S. Hara, and S. Komai, “A 900 MHz power amplifier MMICs with 55% efficiency at 3.3 V operation,” in IEEE MTT-S Dig., 1998, pp. 205–208.
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SOI MESFET RF power amplifiers at the 45nm node
900MHZ POWER AMPLIFIER .
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MEMS for wireless communications: ‘from RF-MEMS components to RF-MEMS-SiP’
An illustration of a RF front-end 900 MHz power amplifier (PA) module using a PASSITM die mounted on a thick film ceramic substrate and connected via wire bonds is shown in figure 17.
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Circuit and system design for an 860–960 MHz RFID reader front‐ends with Tx leakage suppression in 0.18 − µm CMOS technology
A fully integrated 900 MHz power amplifier with new transformer network in CMOS technology.
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Enhanced linearity and efficiency of HBT MMIC power amplifiers for WCDMA applications
WCDMA 900 MHZ POWER AMPLIFIER DESIGN .
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Manufacture of low-loss microwave circuits using HMIC technology
One is a 900MHz power amplifier .
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PBL40 datasheet : Datasheets for Electronic Components and Semiconductors
3.5 V GSM 900 MHz power amplifier .
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Page 2. Semiconductor parts with 031 in root number
3.5 V GSM 900 MHz power amplifier .
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Page 4. Semiconductor parts with 403 in root number
3.5 V GSM 900 MHz power amplifier .