EEPROM Write Cycle

Description: ROHM's high reliability serial EEPROMs command a large market share and are available in a range of capacities, bus interfaces (Microwire, I²C, SPI), operating voltages and package types, making them ideal for battery powered devices. The entire series are both lead-free and RoHS-compliant.

• Bits per Word: 16 bits
• Bus Type: MICROWIRE™
• Data Retention: 40 years
• Density: 4 kbits

Description: BR24H512F-5AC is a 512Kbit serial EEPROM of I²C BUS Interface.

• Bits per Word: 8 bits
• Bus Type: I²C
• Data Retention: 100 years
• Density: 512 kbits

Description: BR24H128FJ-5AC is a 128 kbit serial EEPROM of I²C BUS Interface.

• Bits per Word: 8 bits
• Bus Type: I²C
• Data Retention: 100 years
• Density: 128 kbits

Description: BR24H01xxx-5AC Series is a 1Kbit serial EEPROM of I²C BUS Interface.

• Bits per Word: 8 bits
• Bus Type: I²C
• Data Retention: 100 years
• Density: 1 kbits

Description: The Microchip Technology Inc. 24AA01H/24LC01BH is a 1Kb Serial EEPROM with half array write protection. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only

• Bus Type: Serial
• Data Rate: 0.4000 MHz
• Density: 1 kbits
• Endurance: 1.00E6 Write/Erase Cycles

Description: Temperature Range - Operating: -40°C ~ 85°C Memory Format: EEPROM Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Manufacturer Package: 8-SOIC (0.209", 5.30mm Width) Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and

• IC Package Type: SOIC
• Operating Temperature: -40 to 85 C
• Supply Voltage: Other

Description: The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively

• Access Time: 90 ns
• IC Package Type: Other
• Operating Current: 60 mA
• Standby Current: 0.5000 mA

Description: kbps in Overdrive Mode Using 1-Wire Protocol • Operating Range: 2.8V to 5.25V, -40°C to +85°C • Minimum 100k Write Cycles Endurance • 15kV Built-in ESD Protection Common iButton Features • Digital Identification and Information by

• Density: Over 256 kbits
• Operating Temperature: -40 to 85 C

Description: The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively

• Access Time: 90 ns
• IC Package Type: Other
• Memory Category: EEPROM
• Operating Current: 60 mA

Description: VCOM amplifier, and internal EEPROM to store all reference voltage data. The EEPROM features an endurance of 10,000 write cycles and a data retention of 20 years at 105°C. Combining gamma and VCOM reference voltage generators with low power operation and EEPROM,

Description: . Features CIS systems can be configured to meet your data transfer requirements Unlimited read cycles with write cycles up to 100 million Large storage capacity Interfaces to PLC's and PC's Large variety of carriers with EEPROM and FRAM storage

• Detection Range: 4 cm
• Features: Read / Write, Noncontact
• Frequency: 125000 Hz
• Interface: RS232, RS422, Other

Description: Control to Eliminate Ground Bounce100 kbps Max. Bit Rate – Equivalent to 100 kHz Clock Frequency Self-Timed Write Cycle (including Auto-Erase Page-Write Buffer for up to 16 Bytes) STATUS Register for Added Control: - Write enable latch bit - Write-In-Progress bit

• Form Factor: Other
• Operating Temperature: -40 to 185 F

Description: read and write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the

Description: 1014 read/write cycles. With 100 million times more write cycles than EEPROM, it's ideal for applications requiring frequent or rapid writes, from critical data collection to demanding industrial controls. Summary of Features 256-Kbit F-RAM logically

• Density: 256 kbits
• IC Package Type: Other
• Memory Category: FRAM
• Operating Temperature: -40 to 85 C

Description: KBytes). Page size: 256 Bytes. Byte or Page Write within 10 ms. Write Protect Pin for Full Array Hardware Data Protection. Select the device address with an on-board jumper. 3.3 V or 5 V power supply on mikroBUS socket. More than 1 million Write cycles. Dimensions 28.6 x

Description: programming only. Read / Write mode: See datasheet of ST-Microelectronics ST14C02C for details. Power Supply: 3.0V to 5.5V. Erase / Write cycles: 1,000,000 times minimum. Data retention: 10 years minimum. Temperature: 0°C to +70°C. Dimensions: 85 x 53 x 1 mm. Weight: 10g

• Density: 2048 kbits

Description: of switching quickly (1µs) enabling rapid switching between two gamma curves (or operational modes) in TFT-LCD applications. The ISL24833 also integrates two banks of EEPROM that can store all reference voltage data. The EEPROM is capable of 300 write cycles. Combining

• IC Package Type: Other

Description: 256KB to 32MB and the cards are availablein standard or industrial temperatures. Features: PCMCIA / JEIDA standard Fast read access time 100,000 write/erase cycles per block 5V read voltage Built-in write protect switch Optional attribute memory: 8KB EEPROM Commercial

• PCMCIA Product: Memory Card

Description: milliseconds before data becomes nonvolatile. If power is disrupted, pending data is lost unless the system has extra capacitance or batteries to keep the system on until data is stored. F-RAM offers virtually unlimited endurance of 100 trillion read/write cycles. Traditional

• Density: 4 to 4000 kbits
• IC Package Type: SOIC, TSOP, Other
• Memory Category: NVRAM, FRAM
• Supply Voltage: 1.8 V, 3 V, 5 V

Description: Write/Erase cycles: 10,000 Flash/100,000 EEPROM Data Retention: 20 years at 85°C/100 years at 25°C In-System Programming by On-chip Boot Program True Read-While-Write Operation Programming Lock for Software Security JTAG (IEEE std. 1149

• Device Type: Clock Generator
• Operating Temperature: -40 to 85 C
• Package / Form Factor: DIP, Other

Description: Temperature Range - Operating: -40°C ~ 85°C Memory Format: EEPROM Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Memory Interface: I2C Manufacturer Package: 8-TSSOP, 8-MSOP Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

• IC Package Type: SSOP, Other
• Operating Temperature: -40 to 85 C

Description: - Operating: -40°C ~ 85°C Memory Format: EEPROM Clock Frequency: 1MHz Write Cycle Time - Word, Page: 10ms Memory Interface: SPI Manufacturer Package: 8-SOIC Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity:

• Operating Temperature: -40 to 85 C
• Package Type / Mounting: Surface Mount (SMD)

Description: Byte EEPROM Block organization of memory, 16 sectors with fixed 4 blocks of 16 bytes each EEPROM updating time per block less than 4 ms Endurance > 100,000 erase / write cycles (values are temperature dependent) Data retention > 10 years User

• Application Memory (Flash / EEPROM): 0.2560 KB
• IC Package Type: Other
• Interface: Other
• Type: Contactless

Description: Memory Type: Non-Volatile Memory Size: 512Kb (64K x 8) Access Time: 400ns Family Name: CAT24C512 Categories: Integrated Circuits (ICs) Memory Format: EEPROM Manufacturer Homepage: www.onsemi.com Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Memory

• Access Time: 400 ns
• Operating Temperature: -40 to 85 C
• Supply Voltage: Other

Description: two independent angle sensing channels, digital signal processing, and output options: SPI, PWM, motor commutation (U, V, W), and encoder outputs (A, B, I). Also integrated into the devices are on-chip EEPROM technology, capable of supporting a high number of read/write cycles

• Form Factor: Integrated Chip (IC)
• Operating Temperature: 104 to 257 F
• Output: Other
• Supply Voltage: 3.7 to 18 volts

Description: Programmable angle measurement range Built-in self-diagnosis and alarm function Operating temperature range: -40°C to 160°C Built-in EEPROM, over 10,000 write cycles Excellent resistance to environmental magnetic fields AEC-Q100 compliant Piecewise linear calibration mode

• Category of Device: Sensor Element / Chip
• Maximum Angular Measurement: 360 degrees