-
Supplier: Microchip Technology, Inc.
Description: (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 1200 VCESat (V): 2.05 Current (A) Tc=80C: 150 Silicon type: TRENCH 4 FAST Package: SP6C
- Output Current: 150 amps
- Configuration: Full Bridge
- Technology: IGBT
-
Supplier: Microchip Technology, Inc.
Description: (optional) Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Additional Features Configuration: Full bridge VCES (V): 650 VCESat (V): 1.85 Current (A) Tc=80C: 200 Silicon type: TRENCH 3 FAST Package: SP6C
- Output Current: 200 amps
- Configuration: Full Bridge
- Technology: IGBT
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR,IGBT POWER MODULE,FULL BRIDGE,600V V(BR)CES,21A I(C)
-
-
Supplier: DigiKey
Description: IGBT Module PT Full Bridge Inverter 1200V 85A 290W Chassis Mount E2
- Features: Other
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1341472-APTGF150H120G Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Package: Bulk Standard Package: 1 Power - Max: 961 W Configuration: Full Bridge Inverter Input: Standard IGBT Type: NPT Voltage -
- VCES: 1,200 volts
- Features: IGBT
- Package Type: SOT3
-
Supplier: DigiKey
Description: Half Bridge (3) Driver AC Motors IGBT 38-SDIP Hybrid Module
- Supply Voltage: 12.5 to 17.5 volts
- Operating Temperature: -40 to 150 C
- Packing Method: Bulk
- Features: Other
-
Supplier: Quarktwin Technology Ltd.
Description: Half Bridge (3) Driver AC Motors IGBT Module
- Peak Output Current: 8 amps
- Supply Voltage: 12.5 to 17.5 volts
- Operating Temperature: 150 C
- Driver Type: Dual Gate Driver (Half-bridge)
-
Supplier: Richardson RFPD
Description: Full bridge Trench + Field Stop IGBT4 Power Module
- Features: IGBT, Other
-
Supplier: Infineon Technologies AG
Description: The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon’s long-term experience developing IGBT power modules and implements the EDT2 IGBT generation. The innovative and
- VCES: 750 volts
- VCE(on): 1.2 volts
- IC(max): 900 amps
- Transistor Grade / Operating Range: Automotive
-
Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 788925-MKI50-12E7 Operating Temperature Range: -40°C ~ 125°C (TJ) Package: E2 Mounting: Chassis Mount Power - Max: 350W Configuration: Full Bridge Inverter Input: Standard IGBT Type: NPT Input Capacitance (Cies) @ Vce: 3.8nF @ 25V NTC
- VCES: 1,200 volts
- TJ: -40 to 125 C
- Features: IGBT
- Package Type: SOT3
-
Supplier: Infineon Technologies AG
Description: EasyPACK™ 2B 650 V, 40 A 3-level NPC1 full-bridge IGBT module with CoolSiC™ Schottky diode 650V, PressFIT Contact technology and TRENCHSTOP™ 5 H5. Summary of Features CoolSiC™ Schottky diode gen 5 Increased blocking voltage capability up to 650 V Low switching losses
- VCES: 650 volts
- VCE(on): 1.4 volts
- IC(max): 40 amps
- Features: IGBT, Other
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1253555-STK531U394A-E Category: Integrated Circuits (ICs)>PMIC - Full, Half-Bridge Drivers Features: Status Flag Package: Tube Applications: AC Motors Standard Package: 11 Technology: IGBT Interface: Logic Current - Output / Channel: 15A Fault Protection:
- Supply Voltage (Vi): 12.5 to 17.5 volts
- Operating Temperature: -40 to 150 C
- Output Options: Inverting
-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 875299-IRSM506-076DA Series: µIPM™-DIP Operating Temperature Range: -40°C ~ 150°C (TJ) Features: Half Bridge (3) Driver AC Motors IGBT 23-DIP Package: Tube Package: 32-PowerDIP Module, 23 Leads Mounting: Through Hole
- Operating Temperature: -40 to 150 C
- Package Type: DIP
- Features: Other
-
Supplier: Vincotech GmbH
Description: fsw > 30kHz, full current FWD Integrated DC capacitor Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High efficiency in hard switching and resonant topologies High speed switching Low gate charge Convex shaped substrate for superior thermal
- Output Voltage: 650 volts
- Output Current: 100 amps
- Configuration: H-Bridge
- Technology: IGBT
-
Supplier: Quarktwin Technology Ltd.
Description: IGBT Module Field Stop Full Bridge Inverter 650 V 75 A 236 W Chassis Mount 32-PIM (56.7x42.5)
- Operating Temperature: -40 to 150 C
- Output Configuration: Inverting
- Features: Other
-
Supplier: Infineon Technologies AG
Description: Applications Automotive Automotive secondary power distribution unit Diesel direct injection High-voltage DC-DC converter for electric vehicles Power conversion EasyPACK™ CoolSiC™ Automotive MOSFET 1200V Half Bridge Module EasyPACK™ 1B, 8 mΩ halfbridge module implementing the
- Features: Automotive, MOSFET, Other
- Packing Method: Tray
-
Supplier: Infineon Technologies AG
Description: Silicon Carbide MOSFET Discretes FF225R17ME7_B11 | IGBT modules FF450R17ME7_B11 | IGBT modules FD300R17KE4 | IGBT modules IMBF170R450M1 | Silicon Carbide MOSFET Discretes FF225R17ME7_B11 | IGBT modules FF450R17ME7_B11 | IGBT
- Features: Other
- Packing Method: Tape Reel
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1MHz, 80A, 12V. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, 1MHz, 80A, 12V, Full
- Supply Voltage: 12 volts
- Fall Time: 20 ns
- Number of Outputs: 2
- Features: Other
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: Micro-Integrated Power Module, IGBT-Based, 500V, 2.2-Ohm, 23-Pin DIP-A Tube Product overview: IRSM505-035DA from International Rectifier is a Power Management IC for power sequencing, voltage regulation, battery management, load control, and compact electronic system design. It is
- Operating Temperature: -40 C
- Features: Other
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: IPM IGBT 600V 10A 21-Pin(21+Tab) SIP Module Tube Product overview: STK554U362A-E from onsemi is a Power Management IC for power sequencing, voltage regulation, battery management, load control, and compact electronic system design. It is useful for engineers and buyers comparing
- Output Current (IOUT): 10 amps
- Operating Temperature: -40 C
- Features: Other
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: IPM IGBT 600V 20A 21-Pin(21+Tab) SIP Module Tube Product overview: STK551U3A2A-E from onsemi is a Power Management IC for power sequencing, voltage regulation, battery management, load control, and compact electronic system design. It is useful for engineers and buyers comparing
- Output Current (IOUT): 20 amps
- Operating Temperature: -40 C
- Features: Other
Find Suppliers by Category Top
Featured Products Top
-
Launch of the HPnC Series Large-Capacity Industrial IGBT Modules for Expansion of the Use of Renewable (read more)
Browse Semiconductor Power Modules Datasheets for Fuji Electric Corp. of America -
(SDO): The CN-8021 provides full access to diagnostics and module parameters through Service Data Objects (SDOs). This enables in-depth configuration, remote troubleshooting, and real-time status monitoring, giving you complete insight into your I/O system's health and performance (read more)
Browse I/O Modules and Instruments Datasheets for Sichuan Odot Automation System Co., Ltd. -
The PEX8603-AB50TQIG is a compact, cost-effective PCIe bridge designed to meet the rising demand for scalable, multi-protocol data connectivity in embedded and industrial systems. Offering support for PCIe Gen2/Gen (read more)
Browse IC PCI Bridges Datasheets for Win Source Electronics -
FCL Components offers a full range of relays designed for use in interface relay modules—critical components that bridge low?power control electronics with high?power industrial loads. Integrated into compact DIN?rail housings, these relays provide the essential functions required in (read more)
Browse Electromechanical Relays Datasheets for FCL Components America -
Microsemi silicon carbide Schottky diode modules in stock at Richardson RFPD offer industry-leading integration and package. Shrink system size and weight, while reducing total system costs. Essentially zero forward and reverse recovery (read more)
Browse Diodes Datasheets for Richardson RFPD -
vehicle market.” Edoardo Merli, SVP and Head of Business Group Wide Bandgap, IGBT & Modules (WIM), Nexperia, said: “Strong partnerships are essential to unlocking the full potential of wide bandgap technologies, including SiC and GaN. With our continued R&D investments and (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
. Empowering High-Voltage Designs with Integrated Control The FAN7387MX gate driver IC simplifies half-bridge and full-bridge architectures while increasing efficiency and reliability. It offers a balance of flexibility, protection, and (read more)
Browse Gate Drivers Datasheets for Win Source Electronics -
of silicon wafers. Applications: Heat sinks, High-power IGBT modules, high-power LEDs. 3. Zirconia Toughened Alumina (ZTA) Features: High strength, high reflectivity, high (read more)
Browse Ceramic Sheets and Boards Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
types and potentiometers. Modules offer six channels, each configurable for range, alarm limits, and averaging. Strain Gage Input Modules connect to full bridge sensors, have narrow or wide bandwidth filtering and offer four channels, each configurable for range, alarm limits, and averaging (read more)
Browse Data Acquisition Datasheets for Dataforth Corporation -
Post?processing Plating: Available nickel, gold, silver, or tin plating to enable brazing with copper, Kovar, stainless steel, etc. Applications: Power Electronics: Packaging for IGBT modules, DBC/AMB substrates (read more)
Browse Industrial Ceramic Materials Datasheets for Shenzhen Great Precision Ceramic CO., LTD.