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Supplier: Semikron, Inc.
Description: SEMIKRON’s new ASIC chipset provide for safe IGBT gate control over the whole lifecycle. Short circuits are managed very fast by separate error channels. SoftOff and over voltage feedback avoid dangerous over voltages. The mixed signal ASICs guarantee lowest tolerances over the
- Number of Output Channels: 1, 2, 4, Other
- Peak Output Current: 30 amps
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1066167-IXDD630CI Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Tube Standard Package: 50 Channel Type: Single Input Type: Non-Inverting Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT,
- Driver Type: Low-side Gate Driver
- Fall Time: 11 ns
- Operating Temperature: -55 to 150 C
- Output Configuration: Noninverting
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1078800-MIC4422ZT Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Tube Standard Package: 50 Channel Type: Single Input Type: Non-Inverting Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N
- Driver Type: Low-side Gate Driver
- Fall Time: 24 ns
- Operating Temperature: 0.0 to 150 C
- Output Configuration: Noninverting
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Supplier: Win Source Electronics
Description: Win Source Part Number: 970453-UCC27532DBVR Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Channel Type: Single Input Type: Non-Inverting Driven Configuration: Low-Side Number of
- Driver Type: Low-side Gate Driver
- Fall Time: 7 ns
- Operating Temperature: -40 to 140 C
- Output Configuration: Noninverting
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Supplier: Win Source Electronics
Description: Win Source Part Number: 959551-UCC27517ADBVT Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Tape & Reel Standard Package: 250 Mounting: SMD (SMT) Channel Type: Single Input Type: Inverting, Non-Inverting Driven Configuration: Low
- Driver Type: Low-side Gate Driver
- Fall Time: 7 ns
- Operating Temperature: -40 to 140 C
- Output Configuration: Noninverting
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Supplier: Infineon Technologies AG
Description: 25 V dual-channel low-side gate driver IC EiceDRIVER™ 25 V dual-channel low-side gate driver IC with typical 2.3 A source and 3.3 A sink currents in 8-lead SOIC and PDIP package for MOSFETs and IGBTs. The proprietary latch immune CMOS technologies enable
- Driver Type: Low-side Gate Driver
- Peak Output Current: 2.3 amps
- Propagation Delay: 65 ns
- Supply Voltage: 6 to 20 volts
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Description: MORNSUN hybrid integrated IGBT drivers are designed with a built-in isolation DC/DC converter. They can realize the safety electrical isolation between the power semiconductor and the control circuit with the high-speed optical coupling. The series features switching frequency
- IC Package Type: SIP
- Number of Output Channels: 1
- Output Voltage: 15 volts
- Supply Voltage: 15 volts
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Description: HIGH CURRENT IGBT GATE DRIVER
- Packing Method: Tape Reel, Other
- Supply Voltage: 20 volts
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Supplier: Acme Chip Technology Co., Limited
Description: IC GATE DRVR IGBT PLUG&PLAY
- Packing Method: Bulk, Other
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Supplier: Richardson RFPD
Description: VLA500-01 is a hybrid integrated circuit designed for driving IGBT modules. This device is a fully isolated gate drive circuit consisting of an optimally isolated gate drive amplifier and an isolated DC-to-DC converter.
- IC Package Type: SIP, Other
- Peak Output Current: 12 amps
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Description: MORNSUN power module for IGBT/SiC gate driver adopts the mode of common ground outputs internally for better energy provision of IGBT driver's turn-on and turn-off. Meanwhile, this IGBT driver power supply features output short-circuit
- DC Input Voltage: 12 volts
- DC Output Current: -120 to 120 amps
- DC Output Voltage: -8 to 15 volts
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Description: MORNSUN power module for IGBT/SiC gate driver adopts the mode of common ground outputs internally for better energy provision of IGBT driver's turn-on and turn-off. Meanwhile, this IGBT driver power supply features output short-circuit
- DC Input Voltage: 15 volts
- DC Output Current: -200 to 200 amps
- DC Output Voltage: -9 to 15 volts
- Type: DC/DC Converter
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Supplier: Infineon Technologies AG
Description: Applications Cordless power tools and outdoor power equipment Designers who used this product also designed with 2ED2106S06F | Gate driver ICs 6EDL04I06PT | Gate driver ICs 2ED2106S06F | Gate driver ICs 6EDL04I06PT | Gate driver ICs 2ED2106S06F
- Package Type: TO-251 / TO-252, Other
- Packing Method: Tape Reel, Other
- Switching Speed: 2 to 20 kHz
- VCE(on): 600 volts
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Description: MOSFET IGBT SIC DRIVER 9A
- Operating Temperature: -40 to 125 C
- Package Type: SOIC
- Supply Voltage: Other
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Supplier: ROHM Semiconductor GmbH
Description: RGPR20NL43HR is the Insulated Gate Bipolar Transistor (IGBT) for automotive ignition coil driver circuits and solenoid driver circuits.
- PD: 107000 milliwatts
- Package Type: Other
- Packing Method: Tape Reel
- TJ: -55 to 175 C
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Supplier: Richardson RFPD
Description: Trench IGBT Modules. Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal
- Package Type: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Number of Output Channels: 1
- Operating Temperature: -40 to 125 C
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Supplier: Littelfuse, Inc.
Description: This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: Maximum junction temperature Tvj=175 °C Qualified according to JEDEC standards Benefits VCE(peak) clamping circuits not required Suitable for use with single turn-on / turn-off gate resistor No need for gate clamping
- Package Type: TO-263, Other
- Transistor Type: IGBT
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Supplier: Broadcom Inc.
Description: The ACPL-W314 gate drive optocoupler consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage
- Collector Emitter Breakdown Voltage: 5 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 100 C
- Optocoupler Input: AC, DC
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Supplier: Infineon Technologies AG
Description: steps designing applications with the TRENCHSTOP™ IGBT7 in discrete packages, such as the IKW40N65ET7 or IKW40N120CS7, and EiceDRIVER™ 1200 V isolated gate driver 1EDI20H12AH. The assembled discrete has a rated blocking voltage of up to 1200 V and the board supports all
- Category: Development Board
- Supported System: Other
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Supplier: Richardson RFPD
Description: FRDMGD3160HBIEVM: GD3160 Half-Bridge Evaluation Kit FRDMGD3160HBIEVM is a half-bridge evaluation kit populated with two GD3160 single channel IGBT/SiC MOSFET gate drive devices. The kit includes the Freedom KL25Z microcontroller hardware for interfacing a PC installed with Flex GUI
- Category: Development Board
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Supplier: RS Components, Ltd.
Description: The Semikron SKYPER® 12 press-fit modules are IGBT drivers for SEMIX Press-fit and Econodual Press-fit IGBT modules. The half-bridge driver boards can be mounted directly onto 17mm press-fit modules. With 30% fewer components than other plug-and-play solutions, these
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Supplier: RS Components, Ltd.
Description: The IGBT is optimised for driving the coil in the harsh environment of automotive ignition systems. Active voltage clamps on the IGBT Gate-Emitter and Gate-Collector are included in the semiconductor package. Logic Level Gate Driver with ESD Protection.
- IC(max): 20 amps
- PD: 125000 milliwatts
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: SAE International
Description: regions and at bus voltage much lower than the worst case voltage. This paper proposes a low-cost and simple gate driver circuit that can actively adjust the turn-off switching speed based on IGBT current levels. The proposed circuit utilizes the current sensing
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Supplier: RS Components, Ltd.
Description: Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: IGBT
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Supplier: Microchip Technology, Inc.
Description: The MIC5020 low-side MOSFET driver is designed to operate at frequencies greater than 100kHz (5kHz PWM for 2% to 100% duty cycle) and is an ideal choice for high-speed applications such as motor control, switch mode power supplies (SMPS), and applications using IGBTs. The MIC5020 can
- Transistor Type: MOSFET
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Supplier: RS Components, Ltd.
Description: The Board 2 generic SKYPER 42 R is an adaptor board for SKYPER IGBT drivers (e.g. RS 905-6175) in bridge circuits for industrial applications. The adaptor board can be used with one IGBT module, or with two in parallel. The board can be customized allowing adaptation and
- Category: Development Suite / Kit
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Supplier: Microchip Technology, Inc.
Description: The MIC5021 high-side MOSFET driver is designed to operate at frequencies up to 100kHz (5kHz PWM for 2% to 100% duty cycle) and is an ideal choice for high speed applications such as motor control, SMPS (switch mode power supplies), and applications using IGBTs. The MIC5021 can also
- Mounting / Configuration: SMD
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Featured Products Top
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its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
The Infineon IR1176 is a compact and efficient low-side gate driver IC, designed to drive MOSFETs and IGBTs with precision and stability. With a non-inverting output and housed in a space-saving 8-SOIC package (read more)
Browse Gate Drivers Datasheets for Nova Technology(HK) Co.,Ltd -
Unlock ultimate performance and simplicity with our revolutionary design. Allegro’s AHV85110 isolated gate driver significantly reduces circuit design complexity by removing the need for bootstrap circuits and isolated supplies, as well as significantly decreasing EMI challenges. Start designing with our solutions today. (read more)
Browse Gate Drivers Datasheets for Allegro MicroSystems Inc. -
The ADuM4221/ADuM4221-1/ADuM4221-2 are 4 A isolated, half bridge gate drivers that employ the Analog Devices, Inc., iCoupler® technology to provide independent and isolated high-side and low-side outputs. The ADuM4221/ADuM4221-1/ ADuM4221-2 provide 5700 V rms isolation in an increased (read more)
Browse Gate Drivers Datasheets for Richardson RFPD -
The FAN7387MX is a robust, highly integrated gate driver IC tailored for demanding high-voltage applications. By combining critical control, protection, and drive functions into a single device, it enables engineers to build more efficient, reliable, and compact (read more)
Browse Gate Drivers Datasheets for Win Source Electronics -
Energy Fuji Electric Co., Ltd. is pleased to announce the launch of the HPnC Series, a new series of large-capacity industrial IGBT* modules for applications including power converters for solar and wind power generation systems. * Insulated-gate bipolar transistor (read more)
Browse Semiconductor Power Modules Datasheets for Fuji Electric Corp. of America -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
-channel functional and reinforced isolated EiceDRIVER™ gate driver IC parts. Enter a new era of efficiency with Infineon. Why GaN from Infineon? What turns Infineon into your best choice when it comes to GaN based solutions? The four pillars of success that make the difference (read more)
Browse Network Equipment Datasheets for DigiKey -
Asymmetric regulated outputs suit IGBT, Si, SiC, and GaN cascode gate drives - It is now simpler than ever to generate power for IGBT, Si, SiC, and GaN cascode gate drivers with RECOM's R24C2T25 DC/DC converter from Richardson RFPD. The SMT part, in a compact 7.5 x 12.83mm 36-pin (read more)
Browse DC-DC Converter Chips Datasheets for Richardson RFPD -
, and complexity of a power module—both in the design and in the bill of materials (BOM)—and the added complexity increases the risk of unexpected results during design validation and in application. Conventional gate drivers also typically use a bootstrap circuit to create the (read more)
Browse Gate Drivers Datasheets for Allegro MicroSystems Inc.
Conduct Research Top
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Galvanic isolation for IGBT-Driver
Usually, an IGBT (Insulated Gate Bipolar Transistor) is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence describes the basics very well, in the case of IGBT
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Optocoupler Performance Comparison: NEC PS9552 vs. Avago HCPL-3120
with hysteresis, and high common mode transient immunity. Applications for these devices include IGBT and power MOSFET gate drivers. In summary, the PS9552 provides all the features and offers performance equivalent to the HCPL-3120. As a result, the PS9552 would be an easy drop-in replacement
More Information Top
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http://calhoun.nps.edu/public/bitstream/handle/10945/8152/controllerdesign00sale.pdf?sequence=1
lOOkW SSCM through a proprietary IGBT gate driver circuit .
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http://waset.org/publications/13504/design-calculation-and-performance-testing-of-heating-coil-in-induction-surface-hardening-machine
Fig. 10 IGBT gate driver circuit (for start heating .
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High power snubberless IGBT converter for direct-drive wind power generation system
In IGBT gate driver circuit , a lot of modified methods which change the energy the input capacitor of IGBTs .
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Intelligent bidirectional power switch module for matrix converter applications
These components combine an optocoupler with an IGBT gate driver circuit in the same package.
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Low jitter and drift high voltage IGBT gate driver
Figure 1 is the block diagram of the IGBT gate driver circuit (IGBT trigger) that we developed.
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http://dspace.mit.edu/bitstream/handle/1721.1/85727/51167102-MIT.pdf?sequence=2
The DC-DC converters used in this design are the M57145L-01 converters manufactured by Powerex for use in IGBT gate driver circuits .
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http://www.iosrjournals.org/iosr-jeee/Papers/Vol5-issue2/D0522128.pdf
5V supply is used for the operation of the microcontroller board while 12 V supply is used for the MOSFET/ IGBT gate driver circuit .
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http://repositories.lib.utexas.edu/bitstream/handle/2152/ETD-UT-2009-12-498/LEE-THESIS.pdf?sequence=1
These signals enter into the IGBT gate driver circuit , and the IGBT closes during the width of a signal.
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Improvements for the pulse charger with zero current switching and isolation for electric vehicles
IGBT gate driver circuit was designed with galvanic isolation to drive five IGBTS at different times according to the five modes of operation.
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Power factor correction using an enhancement-mode SiC JFET
Switching waveforms were analyzed to evaluate the functionality of the IGBT and IGBT gate driver circuit for calculating the modification to the components necessary to integrate the JFET in place of the original IGBT.