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Description: Features Circuitry: Class B Linear Input Power: 120V AC 60Hz or 230V AC 50Hz Input Signal: 0-2V rms. into 600 ohm load (50 ohm, 75 ohm optional) Frequency Response: 10Hz to 1MHz Output Volts: 0 – 25V rms. (inquire about available output transformers) Output Power: 50W, 250W,
- Frequency Range: 0.00001 to 1 MHz
- Output Power( P1dB): 53.979400086720375 dBm
- Minimum Operating Voltage: 115 volts
- Maximum Operating Voltage: 230 volts
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Supplier: Richardson RFPD
Description: stable performances together. With single +10.0V DC operation, the amplifier has built in DC-DC converter and sequencing bias circuitries. The amplifier works in Class-A operation at 50-Ohm impedance system. The amplifier has standard SMA connectorized WP-6 gold
- Frequency Range: 2,000 to 4,000 MHz
- Maximum Gain: 35 dB
- Output Power( P1dB): 32 dBm
- Minimum Operating Voltage: 10 volts
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Supplier: AR Modular RF
Description: The Model KAW2040 is a Class AB wideband RF power amplifier delivering in excess of 100 Watts CW power into a 50-Ohm load over the frequency range of 100 MHz to 500 MHz. Power gain is a minimum of 50 dB. GPIB control requires the
- Frequency Range: 100 to 500 MHz
- Minimum Gain: 50 dB
- Output Power( P1dB): 50 dBm
- Gain Flatness: 2.5 dB
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Supplier: Richardson RFPD
Description: 0.47- 0.96 GHz UHF 10 W LOW NOISE POWER AMPLIFIER WPA0510A. WPA0510A is a low noise figure, wideband, and high linearity class A operation power amplifier. The amplifier offers typical 40.0 dBm output P1dB, 0.90 dB noise figure, 50 dB gain, and
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Supplier: Richardson RFPD
Description: The SKU 1212 is a 2000 to 6000 MHz amplifier which is guaranteed to deliver 50W minimum output power and related RF performance under all specified temperature and environmental conditions. Typical power output is 65W and other typical performance parameters are
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12A03A Micro L- & S-band radio frequency (RF) power amplifier boasts the industry's smallest form factor in its class of PAs at 1.62 cubic inches and provides 5 watts of RF power for CW and near-constant-envelope waveforms from 1.0 to 2.5 GHz.
- Frequency Range: 1,000 to 2,500 MHz
- Minimum Gain: 37 dB
- Maximum Gain: 37 dB
- Output Power( P1dB): 37.78151250383644 dBm
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Supplier: AR RF/Microwave Instrumentation
Description: The Model 100U1000A is a solid-state, Class A design, self-contained, air-cooled, broadband power amplifier designed for applications where instantaneous bandwidth, high gain and linearity are required. It will provide a minimum of 100 W across its operating
- Output Power( P1dB): 50 dBm
- Applications: Mobile / Wireless Systems
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Supplier: ValueTronics International, Inc.
Description: The A-150 is a 35 GHz 150 Watt RF Amplifier from ENI. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Start Frequency: 300 kHz Stop
- Frequency Range: 35,000 MHz
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Supplier: APITech
Description: Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge
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Supplier: Custom MMIC
Description: The CMD184 is a 4.5 W wideband GaN MMIC power amplifier die which operates from 0.5 to 20 GHz. The amplifier delivers greater than 13 dB of gain with a corresponding output 1 dB compression point of +34.5 dBm and a saturated output power of +36.5 dBm.
- Frequency Range: 500 to 20,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 13 dB
- Output Power( P1dB): 34.49999999999999 dBm
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Supplier: Fairview Microwave Inc.
Description: at 40 Watt. Our SMA high power RF amplifier design has a 55 dB typical gain. Fairview RF high power high gain amplifier part number FMAM5077 is rated with a Psat of 46 dBm. Our radio frequency high power amplifier is constructed
- Frequency Range: 800 to 2,000 MHz
- Maximum Gain: 55 dB
- Output Intercept Point (IP3): 44 dBm
- Maximum Operating Voltage: 30 volts
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Supplier: APITech
Description: The QB-617 is a Class “A” amplifier operating in a communication band of 1930 to 1990MHz to jam communication band frequencies. This addition to API’s power amplifier product line offers a minimum output power of 100 watts with a
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Supplier: Fairview Microwave Inc.
Description: rated at 1 Watt. Our SMA medium power RF amplifier design has a 54 dB typical gain. Fairview RF medium power high gain amplifier part number FMAM5074 is rated with a Psat of 30 dBm. Our radio frequency medium power amplifier is
- Frequency Range: 2,000 to 2,600 MHz
- Maximum Gain: 54 dB
- Output Intercept Point (IP3): 43 dBm
- Maximum Operating Voltage: 30 volts
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Supplier: Fairview Microwave Inc.
Description: rated at 20 dBm. Our SMA medium power RF amplifier design has a 48 dB typical gain. Fairview RF medium power high gain amplifier part number FMAM5079 is rated with a Psat of 20 dBm. Our radio frequency medium power amplifier is
- Frequency Range: 4,400 to 4,900 MHz
- Maximum Gain: 48 dB
- Output Intercept Point (IP3): 44 dBm
- Maximum Operating Voltage: 32 volts
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Supplier: Fairview Microwave Inc.
Description: rated at 20 dBm. Our SMA medium power RF amplifier design has a 13.6 dB typical gain. Fairview RF medium power amplifier part number FMAM5085 is rated with a Psat of 20 dBm. Our radio frequency medium power amplifier is
- Frequency Range: 1,000 to 2,500 MHz
- Maximum Gain: 13.6 dB
- Output Intercept Point (IP3): 41.99999999999999 dBm
- Maximum Operating Voltage: 32 volts
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Supplier: Qorvo
Description: coupler and TxRx Switch for TDD operation. The QM75041 supports Average Power Tracking (APT) PC2 power targets as well as Envelope Tracking (ET) up to 5.2 Vdc. The QM75041 is packaged in a RoHS-compliant,30 pin, 3mm x 5mm x 0.70mm lead less package.
- Amplifier Type: Power Amplifier
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Supplier: Mini-Circuits
Description: Mini-Circuits’ ZHL-72A+ utilizes high power LDMOS transistor output stage. Class A operation accept any kind of modulation. The frequency range is so wide (280,000:1) that the amplifier may handle long pulses, 15µsec typ. with very short rise and fall duration 1.1 nsec.
- Frequency Range: 0.0025 to 700 MHz
- Minimum Gain: 25 dB
- Maximum Gain: 25 dB
- Output Power( P1dB): 22 dBm
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Supplier: Qorvo
Description: An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB2731N is a solid state, spatial combining amplifier with an operating range of 27.5 - 31 GHz while achieving greater than 49 dBm of instantaneous linear power. With its maximum performance in
- Frequency Range: 27,500 to 31,000 MHz
- Minimum Operating Voltage: 22 volts
- Maximum Operating Voltage: 22 volts
- Applications: Military / Defense
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Supplier: AR RF/Microwave Instrumentation
Description: overdrive by an RF input leveling circuit which controls the RF input level to the RF amplifier first stage when the RF input level is increased above 0 dBm. The RF amplifier stages are protected from overtemperature by removing the DC voltage to them
- Frequency Range: 700 to 6,000 MHz
- Output Power( P1dB): 53.979400086720375 dBm
- Applications: Mobile / Wireless Systems
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Supplier: Qorvo
Description: Qorvo's SZM-5066Z is a high-linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost, surface-mountable, plastic QFN multi-chip module package. The SZM-5066Z is designed for 802.11a/n in the 4.9GHz to 5.85GHz bands and can operate from
- Frequency Range: 5,100 to 5,900 MHz
- Minimum Gain: 33 dB
- Maximum Gain: 33 dB
- Amplifier Type: Power Amplifier
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Supplier: Qorvo
Description: An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB3238N is a solid state, spatialcombining amplifier with an operating range of 32 - 38 GHz. With its maximum performance in output power, gain, power added efficiency, and power
- Frequency Range: 32,000 to 38,000 MHz
- Minimum Operating Voltage: 24 volts
- Maximum Operating Voltage: 24 volts
- Applications: Military / Defense, Radar Systems
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Supplier: Mini-Circuits
Description: Mini-Circuits ZVE-2W-272+ is an unconditionally stable balanced class-A amplifier. This ruggedized high power amplifier is capable of delivering 2W output signals across the entire operating bandwidth, from 700 MHz to 2700 MHz. Extensive safety
- Minimum Operating Voltage: 18 volts
- Maximum Operating Voltage: 18 volts
- Nominal Impedance: 50 Ohms
- Package Type: Connectorized
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Supplier: Renesas Electronics Corporation
Description: 1.4W of continuous output power with less than 1% THD+N driving a 8? load from a 5V supply. The ISL99201 features a high-efficiency, low-noise modulation scheme. It operates with 86% efficiency at 400mW into 8? and has a signal-to-noise ratio (SNR) that is better
- Features: Audio Amplifiers, Single Supply, Thermal Shutdown Protection
- Operation Class: Class D
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Supplier: Broadcom Inc.
Description: Avago Technologies' MGA-412P8 is a 802.11 b/g WLAN power amplifier housed in a miniature 2 x 2 x 0.75 mm leadless plastic chip carrier (LPCC) package. The power amplifier is designed for applications in the 1.7GHz to 3GHz frequency range, yet it is optimized
- Frequency Range: 1,700 to 3,000 MHz
- Minimum Gain: 25.5 dB
- Maximum Gain: 25.5 dB
- Output Power( P1dB): 25.300000000000004 dBm
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Supplier: Mini-Circuits
Description: Mini-Circuits’ ZVE-143(X)-S+ is a Class A, two-stage, unconditionally stable amplifier providing flat gain over an extremely wide frequency range from 8 to 14 GHz. This model is capable of delivering up to 0.6 W output power at P1dB with high output IP3 supporting
- Minimum Operating Voltage: 17 volts
- Maximum Operating Voltage: 17 volts
- Operating Temperature: -40 to 85 C
- Nominal Impedance: 50 Ohms
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Supplier: Mini-Circuits
Description: The ZJL-153+ is a Class A, wide frequency range, ideal for a variety of lab applications as well as applications including communications, radar and more. The ruggedly-designed amplifier provides unconditional stability. Housed in a rugged
- Minimum Operating Voltage: 5.5 volts
- Maximum Operating Voltage: 5.5 volts
- Operating Temperature: -40 to 50 C
- Nominal Impedance: 50 Ohms
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Supplier: Richardson RFPD
Description: The ARF460A comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been optimized for both linear and high efficiency
- Output Power: 150 watts
- Power Gain: 13 dB
- Operating Frequency: 2 to 65 MHz
- Features: MOSFET RF Transistors, Other
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Supplier: Visual Sound, Inc.
Description: QSC Audio Products, Inc. The model ISA 1350 Professional Power Amplifier drives 70V lines directly with 1500 watts per channel. The ISA Installed System Amplifiers are designed to meet the needs of sound system designers and contractors worldwide. Versatile loading options and
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Supplier: PTB Sales, Inc.
Description: Seren IPS Industrial Power Systems R3027W is from the R3001 and L3001 line of RF power supplies. Seren “R Series” products utilize Field-Effect Transistors in the exciter and power amplifier stages. The unit operates in a class AB mode providing
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Supplier: Rohde & Schwarz USA, Inc.
Description: The R&S®BBA130 broadband amplifiers offer a variety of setting options so you can optimally tune the output signal to your specific application. During operation, you can adjust the operating class for transistors between Class A and Class AB as well
- Frequency Range: 80 to 6 MHz
- Gain Flatness: 3.8 dB
- Nominal Impedance: 50 Ohms
- Package Type: Connectorized
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Description: A survey of microwave technology tailored for professionals in wireless communications RF Technologies for Low Power Wireless Communications updates recent developments in wireless communications from a hardware design standpoint and offers specialized coverage of
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Supplier: Win Source Electronics
Description: Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Application Field: Used in RF Communications, Audio, Portable Devices, Consumer Electronics, Power Management,
- Supply Voltage (VS): 4 to 12 volts
- Output Power (PO): 0.325 watts
- Operating Temperature: 0 to 70 C
- Features: Audio Amplifiers, Industrial, Other
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Supplier: Win Source Electronics
Description: Date: Obsolete Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Sufficient Application Field: Used in RF Communications, Audio, Portable Devices, Consumer Electronics, Power
- Supply Voltage (VS): 4 to 12 volts
- Output Power (PO): 0.325 watts
- Operating Temperature: 0 to 70 C
- Features: Audio Amplifiers, Industrial, Other
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Supplier: Custom MMIC
Description: The CMD278C4 is a broadband MMIC GaN low noise amplifier housed in a leadless 4x4 mm QFN package. The CMD278C4 is ideally suited for microwave radios and X-band applications where small size and high input power survivability are needed. The broadband device delivers 15
- Frequency Range: 8,000 to 12,000 MHz
- Minimum Gain: 15 dB
- Maximum Gain: 15 dB
- Output Power( P1dB): 27.999999999999996 dBm
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-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Efficient, Low-Noise RF Power Amplification for Industrial Wireless Systems Qorvo’s RFPA0133TR7 integrates advanced GaAs HBT technology to provide a compact, digitally (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
. GaN Systems’ GeN2 amplifier and companion power supply reference design is optimized for sound quality, thermal performance, size, and cost. The evaluation kit includes a 2 channel, 200W per channel (8 ohm) Class-D audio amplifier with 96% efficiency and companion 400W continuous, 550W peak (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
the final RF amplifier in GSM hand-held equipment in 900 MHz band and other applications in the UHF bands. An analog on-board power controller provides over 70 dB range of gain adjustment. This control also allows for power down with a voltage equal to the logic “Low” to set the device (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
a low-cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the output power amplifier in lower power architectures. The QPA2597 is offered in a 4x4 mm plastic overmold QFN. It is internally matched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
LadyBug's engineering and product development for its RF power sensors set a benchmark for accurate and reliable power measurement across frequencies up to 75 GHz. Combining precision, robust design, and affordability, these sensors cater to a wide spectrum of needs, including manufacturing test (read more)
Browse RF Power Meters Datasheets for LadyBug Technologies LLC -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
The QPL1842 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 25dB of gain and low noise from 5MHz to 850MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as Fiber to The Home (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
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A digital ΔΣ RF signal generator for mobile communication transmitters in 90nm CMOS
It provides a voltage-mode output and opens the way for using S- Class RF power amplifiers in mobile communication terminals.
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High-Capacity Communications from Martian Distances Part 2: Spacecraft Antennas and Power Systems
Advances in 1kW- class RF power amplifiers include both TWTA and SSPA technologies.
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RF power amplifiers for portable communication applications
Other RF power amplifier Class ogy compatible with the modulation migra- operations such as D, E, F, and S have tion from analog to digital, lower battery ideal Output efficiency potential of 100%. voltage, etc.?
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Extending talk time through improved transmitter efficiency
…for high levels of efficiency stems from the fact that the RF power amplifier is freed from the requirement to amplify envelope varying signals and can .thus be implemented by one of the switching RF power amplifier classes (e.g. class-D…
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RF Power Amplifiers
Class D RF Power Amplifiers .
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Analog Circuit Design
This text is an edited version [including correction of a typographical error in (1)], of “ Class E RF Power Amplifiers ,” published in QEX magazine, Jan./Feb.
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A computerized study of the class-C-biased RF-power amplifier
N. O. Sokal and F. H. Raab, “Harmonic output of class E RF power amplifiers and load coupling network design: IEEE J. Solid-State Circuits, vol.
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RF power amplifiers, classes A through S-how they operate, and when to use each
Sources of confusion: With at least ten lettered classes of RF power amplifiers , and several combi- nations of those classes, it is not surprising that many F W engineers are confused about power amplifiers.
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An Input Driver Circuit for Class F Power Amplifier
Abstract - An input driver circuit for driving a cascode stage Class F RF Power Amplifier in deep submicron .
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RF POWER AMPLIFIERS FOR MOBILE COMMUNICATIONS
First the design of the Class BE RF power amplifier was investigated.