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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- MOSFET Operating Mode: Depletion
- Package Type: SOT223, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- MOSFET Operating Mode: Depletion
- Package Type: SOT223, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- IDSS: 3 milliamps
- MOSFET Operating Mode: Depletion, Other
- Package Type: Other
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input
- Package Type: SOT23
- Polarity: N-Channel
- VGS(off): -3 to -0.8000 volts
- rDS(on): 1.4 ohms
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Supplier: Littelfuse, Inc.
Description: Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance
- Package Type: TO-251 / TO-252
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level
- Package Type: TO-247, Other
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level
- Package Type: TO-251 / TO-252, Other
- Polarity: N-Channel
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Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Polarity: N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET N-Channel Depletion Mode FET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET N-CHANNEL DEPLETION MODE
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET D2 Depletion Mode Power MOSFETs
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346802-IXTT10N100D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature:
- MOSFET Operating Mode: Depletion
- PD: 400000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346778-IXTT10N100D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature
- MOSFET Operating Mode: Depletion
- PD: 695000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346707-IXTU02N50D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 70 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature:
- MOSFET Operating Mode: Depletion
- PD: 1100 to 25000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346741-IXTT20N50D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature:
- MOSFET Operating Mode: Depletion
- PD: 400000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The HV9967B is an average-mode current control LED driver IC operating in a constant off-time mode. The IC features an integrated 60V, 0.8O MOSFET that can be used as a stand-alone buck converter switch, or connected as a source driver for driving an external high-voltage
- Features: RoHS Compliant
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Supplier: ASTM International
Description: 1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This test method is applicable to all enhancement-mode and depletion-mode
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Supplier: RS Components, Ltd.
Description: Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon Channel Type = N Maximum Continuous Drain Current = 25 mA Maximum Drain Source Voltage = 8 V Maximum Gate Source Voltage = -6 V, +6 V Package Type = SOT-343 Mounting Type = Surface Mount Pin Count = 4 Transistor Configuration =
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, DEPLETION MODE, MOSFET, 20O, TO-92-3. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.090GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Operating Frequency: 1090 MHz
- Output Power: 800 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.030GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: RS Components, Ltd.
Description: The ON Semiconductor LV8400VEVB features the LV8400V-TLM-E (RS 757-0515), a single channel motor driver using a depletion mode MOSFET for the output stage. It has 4 control modes: forward, reverse, brake, and standby. Optimised for high current motor driving. Low power
- Category: Development Suite / Kit
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Supplier: Microchip Technology, Inc.
Description: -up, thereby reducing the continuous power dissipation to a few milliwatts. The adjustable voltage version allows trimming of the output voltage from 8.0 to 12V. This version can also be connected to an external depletion mode MOSFET for increased output current. When used in
- IC Package Type: SOIC / SOP, SOT89, TO-220, Other
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Announcing the launch of e-mode GaN FETs for low & high voltage applications. Nexperia’s new portfolio includes two ≤ 150 V rated devices (3.2 mΩ and 7 mΩ) in WLCSP8 and FCLGA packages, as well as five 650 V (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
is well-suited for applications requiring low input bias current, low input capacitance, and fast switching speed. The device exhibits enhancement mode characteristics at VGS > 0.00V while operating in the subthreshold voltage region with conventional depletion mode characteristics at VGS < 0 (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
technologies with wider cell pitch when operating in linear mode. The MOSFET must be able to handle a current proportional to the number of squibs in the system, whilst regulating their supply voltage for long enough to activate the airbags. Nexperia have designed a range of Application Specific MOSFETS (ASFETs) to address the specialised needs of airbag applications, focused on enhanced SOA performance for improved linear mode. (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
The ALD1116 from Advanced Linear Devices is a dual N-channel enhancement-mode MOSFET array designed for precision in analog circuits. It excels in low-frequency and near-DC conditions, making it ideal for a broad range of analog applications. The device features (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
bandgap semiconductors and copper-clip packaging. This technology offers advantages for renewable energy applications such as solar and residential heat pumps, further enhancing Nexperia’s commitment to developing the latest component technology for sustainable applications. It is also suited to a wide spectrum of industrial applications such as servo drives, switched-mode power supplies (SMPS), server, and telecom. (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
The ALD810025 by Advanced Linear Devices is a member of the ALD8100xx family of Supercapacitor Auto Balancing (SAB™) MOSFETs. It excels in voltage and leakage-current regulation for series-connected supercapacitors. By integrating one or more devices across (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
, resulting in minimal power loss. By effectively balancing series and parallel-connected supercaps, these MOSFETs provide a reliable solution for a wide range of applications. Featuring a precision gate threshold voltage in the Vt mode, the SAB MOSFETs ensure accurate voltage regulation. When (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
The MSCSICPFC/REF5 is a 3-phase Vienna PFC reference design for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) charger and high-power switch mode power supply applications. This reference design achieves 98.6% efficiency at 30 kW output power. PLECS Model Available (read more)
Browse Power MOSFET Datasheets for Richardson RFPD
Conduct Research Top
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An Introduction to Depletion-mode MOSFETs
switches and CMOS. By contrast, the depletion-mode MOSFET has not received the same attention or popularity over this time, despite being the oldest member of the MOSFET family. It does have some rather unique characteristics though, which cannot be easily replicated by other means. This article
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Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
and zero threshold transistors, ALD EPAD technology. enables the same well controlled turn-off, subthreshold, and low. leakage characteristics as standard enhancement mode MOSFETs
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New Design Concepts in Ultra Low Voltage and Nanopower Circuits with EPAD MOSFET Arrays
This introduction to EPAD MOSFET describes a broad selection of devices with precisely set gate threshold voltage values, including zero threshold mode, enhancement mode and depletion mode. Furthermore, novel circuit designs are presented to illustrate how these devices can be used at a practical
More Information Top
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http://dspace.mit.edu/bitstream/handle/1721.1/34219/Fonstad_MicroelecDevCkt_2006EEd.pdf?sequence=1
To turn a depletion mode MOSFET “off,” a bias must be applied that forces the surface out of inversion and into depletion, We will now turn to developing a quantitative model describing the MOSFET operation just outlined.
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Fundamentals of III-V Semiconductor MOSFETs
enhancement and depletion mode MOSFETs made of InAs [4].
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Advanced Gate Stacks for High-Mobility Semiconductors
Depletion mode MOSFETs with Dit < 1012 cm−2 eV−1 were re- cently fabricated by ALD Al2O3 onto native oxide covered GaAs [23, 24].
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Operation and Modeling of the MOS Transistor
F. H. Gaensslen and K. C. Jaeger, “Temperature dependent threshold behavior of depletion mode MOSFETs ,” Solid-State Electronics, vol.
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http://repositories.lib.utexas.edu/bitstream/handle/2152/17914/kimh14697.pdf?sequence=2
semi-insulating substrate with high resistivity in general, thus depletion mode MOSFETs .
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http://repositories.lib.utexas.edu/bitstream/handle/2152/3974/oki43579.pdf?sequence=2
We have demonstrated depletion mode MOSFET using optimum capacitance condition .
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Fabrication of depletion-mode GaAs MOSFET with a selective oxidation process by using metal as the mask
Fig. 2 shows the typical drain I–V characteristics of the n-channel depletion mode MOSFET for a gate oxide thickness of 35 nm.
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Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate
Fig. 3(a) shows the typical drain I-V characteristics of the n-channel depletion mode MOSFET with a gate oxide thickness of 35 nm.
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Potential and electron distribution model for the buried-channel MOSFET
[lo] M. R. Wordeman, “Characteristics of depletion mode MOSFET ’s,” .
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Electronics from the Ground Up: Learn by Hacking, Designing, and Inventing > High School Mathematics with Electronics
See an example parabolic curve of a depletion mode MOSFET in Figure 14-12.