Dual Silicon Photodiodes

Description: Two Triangular shaped Silicon Junctions PR5030 is a dual silicon photodiode with two separate cathodes and one common anode. Each photodiode has a triangular shape to form an interface along the diagonal of the die. Therefore, the two segments allow to resolve a

• Sensitivity: 0.5 A/W
• Operating Temperature: -40 to 85 C
• Dark Current: 0.044 nA
• Photodiode Spectral Response: IR, Visible

Description: resistance can be made to switch between ""on"" and ""off"" state or made to track the input signal in an analog manner. High input-to-output voltage isolation. True resistance element output. SIngle or dual element outputs available. Low cost Suitable for AC or DC use Wide range of input to

Description: Dual-Photodiode with a common Cathode PR5010 is a double silicon photodiode with two symmetrical anodes and a common cathode, sensitive for visible light. The cathode forms an additional photodiode to the substrate that is sensitive for infrared light. Key features

• Sensitivity: 0.43 A/W
• Operating Temperature: -40 to 85 C
• Dark Current: 0.008 nA
• Photodiode Spectral Response: IR, Visible

Description: Photodiode PSD Metal Dual Axis

• Spectral Response Range: 320 nm
• Photodiode Spectral Response: IR
• Features: Other
• Photodiode Material: Silicon

Description: Dual-element, plastic package photodiode The S4204 is a dual-element Si PIN photodiode molded into plastic packages. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. Custom devices (with different element shapes, number

• Sensitivity: 0.65 A/W
• Spectral Response Range: 320 to 1,100 nm
• Dark Current: 1 nA
• Array: Array

Description: moving within the field of view. These detectors can also be used inch applications where wide wavelength range of detection is needed. OSI Optoelectronics offers three types of dual sandwich detectors. The Silicon-Silicon sandwich, in which one silicon photodiode

• Sensitivity: 0.12 A/W
• Spectral Response Range: 950 to 1,060 nm
• Active Area Diameter or Length: 2.54 mm
• Active Area Height: 2.54 mm

Description: The dual LED series consists of a 660nm (red) LED and a companion IR LED such as 880 / 895, 905, or 940nm. They are widely used for ratio metric measurements such as medical analytical and monitoring devices. They can also be used in applications requiring a low cost Bi-Wavelength light

• Sensitivity: 0.33 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 1.7 mm
• Active Area Height: 1.7 mm

Description: Back-illuminated photodiode array for X-ray non-destructive inspection, slender board type The S11299-121 is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller

• Rise Time: 6,500 ns
• Dark Current: 0.03 nA
• Array: Array
• Photodiode Material: Silicon

Description: 2.1X0.6MM SILICON DUAL PD

• Sensitivity: 0.32 A/W
• Spectral Response Range: 400 to 1,100 nm
• Rise Time: 500 ns
• Operating Temperature: -40 to 80 C

Description: Dual axis type, diffused junction technology

• Spectral Response Range: 400 to 1,170 nm
• Active Area Diameter or Length: 15.96 mm
• Rise Time: 4,000 ns
• Dark Current: 4,000 nA

Description: The ISL29006, ISL29007, and ISL29008 are light-to-current silicon optical sensors combining a photodiode array and a current amplifier on a single monolithic IC. The photodiode's spectral sensitivity approximates the human eye response peaking at 550nm with virtually no infrared

Description: A scintillator can be mounted directly on the chip. The S12497 is a Si photodiode suitable for non-destructive inspection of baggage and the like and general industrial measurement. As it is a back-illuminated photodiode, photosensitive area does not have wires, and therefore a

• Sensitivity: 0.57 A/W
• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 9.5 mm
• Active Area Height: 9.5 mm

Description: Low temperature coefficient type APD for 800 nm band

• Sensitivity: 0.5 A/W
• Spectral Response Range: 400 to 1,000 nm
• Active Area Diameter or Length: 1.5 mm
• Active Area Height: 1.5 mm

Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes

• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
• Photodiode Spectral Response: IR, Visible
• Photodiode Package: Leaded, Through Hole Technology (THT)

Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100 nm Hermetic sealed in TO-8

• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
• Photodiode Spectral Response: IR, Visible
• Photodiode Package: Leaded, Through Hole Technology (THT)

Description: Wavelength-sensitive photodiodes utilize the effect of the wavelength-specific absorption depth of radiation in silicon. For this purpose, two p-n junctions are aligned vertically in the silicon crystal, thus enabling separate signal detection within vertically adjacent ranges.

• Spectral Response Range: 450 to 950 nm
• Rise Time: 10,000 ns
• Dark Current: 0.015 to 0.1 nA
• Features: Other

Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage

• Sensitivity: 100 A/W
• Spectral Response Range: 290 to 1,200 nm
• Operating Temperature: -55 to 125 C
• Dark Current: 25 nA

Description: Recommended for measurement of low energies and high repetition rates

• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 10.000000000000002 mm
• Photodiode Spectral Response: IR, UV, Visible
• Photodiode Material: Silicon

Description: Marktech offers a broad line of silicon photo diodes in a variety of package types ranging from through-hole plastic and metal-can to surface mount. These devices are available with standard silicon die having a spectral sensitivity of approximately 400nm - 1100nm or with special UV

• Active Area Diameter or Length: 1.21 mm
• Features: Other
• Photodiode Material: Silicon
• Photodiode Spectral Response: Visible

Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or digital pulse

• Photodiode Type: PIN Photodiode
• Photodiode Material: Silicon
• Photodiode Spectral Response: X-ray

Description: No Description Provided

• Spectral Response Range: 350 to 800 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 1.8 ns

Description: Photodiodes

• Active Area Diameter or Length: 3.174998285500926 mm
• Active Area Height: 3.174998285500926 mm
• Dark Current: 10 nA
• Photodiode Package: Leaded

Description: No Description Provided

• Active Area Diameter or Length: 3 mm
• Active Area Height: 2.2 mm
• Rise Time: 6 ns
• Photodiode Spectral Response: IR

Description: No Description Provided

• Spectral Response Range: 350 to 950 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 5 ns

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range Low gain

• Spectral Response Range: 750 to 930 nm
• Active Area Diameter or Length: 1 mm
• Rise Time: 2 ns
• Dark Current: 2 to 10 nA

Description: Single Photodiode with identical Outer Dimensions PR5040 is a single silicon photodiode with rectangular shape having the same outer dimensions as the segmented types PR5001-PR5030. The photodiode has a low dark current combined with a high sensitivity. The dies are

• Photodiode Spectral Response: IR, Visible
• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon
• Photodiode Package: Surface Mount Technology (SMT)

Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this

• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon

Description: No Description Provided

• Active Area Diameter or Length: 4.800000000000001 mm
• Active Area Height: 6.6000000000000005 mm
• Rise Time: 50 ns
• Photodiode Spectral Response: IR

Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias

• Spectral Response Range: 650 to 850 nm
• Active Area Diameter or Length: 0.5 mm
• Rise Time: 0.35 ns
• Dark Current: 0.5 to 1 nA

Description: Scanned or static beams , dynamic background response

• Spectral Response Range: 633 to 675 nm
• Active Area Diameter or Length: 10.000000000000002 mm
• Active Area Height: 10.000000000000002 mm
• Photodiode Material: Silicon

Description: No Description Provided

• Spectral Response Range: 310 to 850 nm
• Active Area Diameter or Length: 2.1 mm
• Active Area Height: 2.1 mm
• Rise Time: 0.6 ns

Description: Double diffused silicon diode, extruded aluminum housing

• Spectral Response Range: 400 to 1,170 nm
• Active Area Diameter or Length: 101.59994513602963 mm
• Rise Time: 330 ns
• Dark Current: 8,000 nA