Dual Silicon Photodiodes

Description: Two Triangular shaped Silicon Junctions PR5030 is a dual silicon photodiode with two separate cathodes and one common anode. Each photodiode has a triangular shape to form an interface along the diagonal of the die. Therefore, the two segments allow to resolve a

• Dark Current: 0.0440 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon

Description: With minimal size, the PR5001 is a dual photo diode with a wideband spectral sensitivity (450-950 nm) with peak at 800 nm. An active area of two times 0.75 mm x 1.2 mm is packaged in a small transparent DFN package with a size of only 1.8 mm x 2.9 mm. The silicon photo diodes have

• Dark Current: 0.0100 nA
• Operating Temperature: -20 to 85 C
• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon

Description: Dual-Photodiode with a common Cathode PR5010 is a double silicon photodiode with two symmetrical anodes and a common cathode, sensitive for visible light. The cathode forms an additional photodiode to the substrate that is sensitive for infrared light. Key features are

• Dark Current: 0.0080 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon

Description: Dual-element, plastic package photodiode The S4204 is a dual-element Si PIN photodiode molded into plastic packages. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. Custom devices (with different element shapes, number

• Array: Yes
• Dark Current: 1 nA
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon

Description: Dual-element photodiode using newly developed small, thin package The S9345 is a dual-element Si PIN photodiode employing a newly developed small, thin plastic package. The cubic volume reduced to onefifth that of similar type photodiodes using conventional

• Array: Yes
• Dark Current: 5 nA
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon

Description: Dual-element, plastic package photodiode The S3096-02 is a dual-element Si PIN photodiode molded into plastic package. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. Custom devices (with different element shapes,

• Array: Yes
• Dark Current: 0.5000 nA
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon

Description: moving within the field of view. These detectors can also be used inch applications where wide wavelength range of detection is needed. OSI Optoelectronics offers three types of dual sandwich detectors. The Silicon-Silicon sandwich, in which one silicon photodiode is

• Active Area Diameter or Length: 2.54 mm
• Active Area Height: 1.5 mm
• Noise Equivalent Power (NEP): 1.90E-14 W/Hz^½
• Operating Temperature: -40 to 100 C

Description: The dual LED series consists of a 660nm (red) LED and a companion IR LED such as 880 / 895, 905, or 940nm. They are widely used for ratio metric measurements such as medical analytical and monitoring devices. They can also be used in applications requiring a low cost Bi-Wavelength light

• Active Area Diameter or Length: 2.31 mm
• Active Area Height: 2.31 mm
• Dark Current: 5 nA
• Operating Temperature: -25 to 85 C

Description: The dual LED series consists of a 660nm (red) LED and a companion IR LED such as 880 / 895, 905, or 940nm. They are widely used for ratio metric measurements such as medical analytical and monitoring devices. They can also be used in applications requiring a low cost Bi-Wavelength light

• Active Area Diameter or Length: 1.02 mm
• Dark Current: 2 nA
• Operating Temperature: -25 to 85 C
• PN, PIN, or Avalanche: PIN Photodiode

Description: 35 element Si photodiode array for UV to NIR The S4111-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range

• Array: Yes
• Dark Current: 0.0100 nA
• Photodiode Material: Silicon
• Rise Time: 1200 ns

Description: 2.1X0.6MM SILICON DUAL PD

• Dark Current: 2 nA
• Operating Temperature: -40 to 80 C
• Photodiode Package / Mounting: Through Hole Technology (THT), Other
• Rise Time: 500 ns

Description: Dual axis type, diffused junction technology

• Active Area Diameter or Length: 22.57 mm
• Dark Current: 8000 nA
• Noise Equivalent Power (NEP): 6.5 W/Hz^½
• PSD: Yes

Description: The ISL29006, ISL29007, and ISL29008 are light-to-current silicon optical sensors combining a photodiode array and a current amplifier on a single monolithic IC. The photodiode's spectral sensitivity approximates the human eye response peaking at 550nm with virtually no infrared

Description: The Silicon Labs Si1145/46/47 combines an active optical reflectance proximity detector, an ambient light sensor, UV index sensor and an infrared LED into a single 10-Pin QFN package. Their dual port operation enables reliable proximity detection for moving as well as stationary

Description: The Silicon Labs Si1141/42/43 combines an active optical reflectance proximity detector with an ambient light sensor and an infrared LED into a single 10-Pin QFN package. Their dual port operation enables reliable proximity detection for moving as well as stationary objects. The Si1141

Description: The Silicon Labs Si1141/42/43 combines an active optical reflectance proximity detector with an ambient light sensor and an infrared LED into a single 10-Pin QFN package. Their dual port operation enables reliable proximity detection for moving as well as stationary objects. The Si1141

Description: The Silicon Labs Si1145/46/47 combines an active optical reflectance proximity detector, an ambient light sensor, UV index sensor and an infrared LED into a single 10-Pin QFN package. Their dual port operation enables reliable proximity detection for moving as well as stationary

Description: compared to conventional coated spheres. The 918D-IS-1 features a dual detector and is fully calibrated over the very broad wavelength range of 400-1650 nm. The 918D-IS-IG has a single InGaAs detector and is calibrated from 800-1650 nm, and the 918D-IS-SL has a single silicon detector

Description: The 918D-IS-1Universal Fiber Optic Detector uses a symmetrical integrating sphere design to ensure the most accurate calibration possible regardless of the fiber type measured. The integrating sphere uses a novel dual detector design with special optics that improve temperature sensitivity

Description: to conventional coated spheres. The 918D-IS-1 features a dual detector and is fully calibrated over the very broad wavelength range of 400-1650 nm. The 918D-IS-IG has a single InGaAs detector and is calibrated from 800-1650 nm, and the 918D-IS-SL has a single silicon detector and is

Description: Photodiodes

• Active Area Diameter or Length: 1.52 mm
• Active Area Height: 1.52 mm
• Dark Current: 20 nA
• Photodiode Material: Silicon

Description: Marktech offers a broad line of silicon photo diodes in a variety of package types ranging from through-hole plastic and metal-can to surface mount. These devices are available with standard silicon die having a spectral sensitivity of approximately 400nm - 1100nm or with special UV

• Active Area Diameter or Length: 10 mm
• Photodiode Material: Silicon
• Photodiode Package / Mounting: Other
• Spectral Response: Visible

Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100

• Active Area Diameter or Length: 2.5 to 7.9 mm
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon
• Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)

Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this

• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time

• Active Area Diameter or Length: 0.2300 mm
• Dark Current: 0.5000 to 1 nA
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Material: Silicon

Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage

• Dark Current: 25 nA
• Operating Temperature: -55 to 125 C
• PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
• PSD: Yes

Description: Lead (Pb) free, black lens

• Active Area Diameter or Length: 4.8 mm
• Active Area Height: 6.6 mm
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon

Description: Recommended for measurement of low energies and high repetition rates

• Active Area Diameter or Length: 10 mm
• Photodiode Material: Silicon
• Spectral Response: UV, Visible, IR
• Spectral Response Range: 200 to 1100 nm

Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch

• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Array: Yes
• Dark Current: 10000 nA

Description: The XPIN® detector is Moxtek’s best performing Si-PIN detector. XPIN detectors use a silicon PIN diode, multi-layer collimator, and thin DuraBeryllium® window, achieving great resolution and x-ray sensitivity. The XPIN preamp provides a low-noise signal output to an analog or

• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon
• Spectral Response: X-ray