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Supplier: ROHM Semiconductor GmbH
Description: ROHM's high reliability serial EEPROMs command a large market share and are available in a range of capacities, bus interfaces (Microwire, I²C, SPI), operating voltages and package types, making them ideal for battery powered devices. The entire series are both lead-free and RoHS-compliant.
- Density: 4 kbits
- Number of Words: 256 k
- Bits per Word: 16 bits
- Operating Current: 3.5 mA
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Supplier: ROHM Semiconductor GmbH
Description: BR25H256xxx-5AC Series is a 256Kbit serial EEPROM of SPI BUS Interface.
- Density: 256 kbits
- Number of Words: 32 k
- Bits per Word: 8 bits
- Operating Current: 8 mA
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Supplier: ROHM Semiconductor GmbH
Description: BR25H640xxx-5AC Series is a 64 kbit serial EEPROM of SPI BUS Interface.
- Density: 64 kbits
- Number of Words: 8 k
- Bits per Word: 8 bits
- Operating Current: 8 mA
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Supplier: ROHM Semiconductor GmbH
Description: BR25H128xxx-5AC Series is a 128Kbit serial EEPROM of SPI BUS Interface.
- Density: 128 kbits
- Number of Words: 16 k
- Bits per Word: 8 bits
- Operating Current: 8 mA
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Supplier: Microchip Technology, Inc.
Description: The Microchip Technology Inc. 24AA01H/24LC01BH is a 1Kb Serial EEPROM with half array write protection. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only
- Density: 1 kbits
- Data Rate: 0.4 MHz
- Endurance: 1,000,000 Write/Erase Cycles
- Operating Temperature: -40 to 85 C
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Supplier: Microchip Technology, Inc.
Description: The Microchip Technology Inc. 24LC01BH is a 1Kb Serial EEPROM with half array write protection. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 2.5V with standby and active currents of only 1 µA and
- Density: 1 kbits
- Data Rate: 0.4 MHz
- Endurance: 1,000,000 Write/Erase Cycles
- Operating Temperature: -40 to 125 C
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Supplier: Microchip Technology, Inc.
Description: Inputs for Noise Suppression Output Slope Control to Eliminate Ground Bounce 100 kHz and 400 kHz Compatibility Page Write Time 3 ms, typical Self-Timed Erase/Write Cycle 16-Byte Page Write Buffer ESD Protection > 4,000V Hardware Write Protection for Entire Array
- Density: 2 kbits
- Data Rate: 0.4 MHz
- Endurance: 1,000,000 Write/Erase Cycles
- Supply Voltage: 1.5 V, 1.8 V, 2.5 V, 2.7 V, 3 V, 3.3 V, 3.6 V
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Supplier: RS Components, Ltd.
Description: 32KBit SPI High Speed Write Cycle EEPROM
- Density: 256 kbits
- Pin Count: 8
- Features: EEPROM, Other
- Bus Type: SPI
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Supplier: Microchip Technology, Inc.
Description: bounce 100 kHz and 400 kHz clock compatibility Page write time 5 ms maximum Self-timed erase/write cycle 16-byte page write buffer Hardware write-protect More than 1 million erase/write cycles Data retention >200 years
- Density: 2 kbits
- Data Rate: 0.4 MHz
- Endurance: 1,000,000 Write/Erase Cycles
- Operating Temperature: -40 to 85 C
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Supplier: Allied Electronics, Inc.
Description: Features: Self-Timed Write Cycle and Page Write Mode Power On/Off Data Protection Circuitry Sequential Read Function
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Supplier: Allied Electronics, Inc.
Description: Features: Self-Timed Write Cycle and Page Write Mode Power On/Off Data Protection Circuitry Sequential Read Function
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Supplier: Allied Electronics, Inc.
Description: Features: Self-Timed Write Cycle and Page Write Mode Power On/Off Data Protection Circuitry Sequential Read Function
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Supplier: Win Source Electronics
Description: Memory Format: EEPROM Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Manufacturer Package: 8-SOIC (0.209", 5.30mm Width) Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 94
- Cycle Time: 5,000,000 ns
- Operating Temperature: -40 to 85 C
- Features: EEPROM, Other
- Package Type: SOIC
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Supplier: Win Source Electronics
Description: Memory Format: EEPROM Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Manufacturer Package: 8-SOIC Popularity: Low Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Family Part Number: 24AA65 Manufacturer Pack Quantity: 90
- Access Time: 900 ns
- Cycle Time: 5,000,000 ns
- Operating Temperature: 0 to 70 C
- Features: EEPROM, Other
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Supplier: Win Source Electronics
Description: ~ 70°C Memory Format: EEPROM Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Manufacturer Package: 8-DIP Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1
- Cycle Time: 5,000,000 ns
- Operating Temperature: 0 to 70 C
- Package Type: DIP
- Features: EEPROM, Other
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Supplier: Win Source Electronics
Description: ~ 70°C Memory Format: EEPROM Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Manufacturer Package: 8-DIP Popularity: Low Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Family Part Number: 93LC86 Manufacturer Pack
- Cycle Time: 5,000,000 ns
- Operating Temperature: 0 to 70 C
- Package Type: DIP
- Features: EEPROM, Other
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Supplier: Newark, An Avnet Company
Description: IC, EEPROM, 2KBIT, SERIAL, 400KHZ, DIP-8; Clock Frequency:400kHz; Clock Frequency Max Fs:400kHz; Embedded Interface Type:I2C; Erase/Write Cycles:1000000; Filter Terminals:Surface Mount; Frequency:400kHz; IC Interface Type:I2C RoHS Compliant: Yes
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Supplier: Renesas Electronics Corporation
Description: 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decoration: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also
- Operating Current: 60 mA
- Standby Current: 0.5 mA
- Access Time: 90 ns
- Features: EEPROM, Other
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Supplier: Renesas Electronics Corporation
Description: standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32µs/byte write cycle, and enabling the entire memory to be typically written in 0.25 seconds. The X28HC64 also features span style="text-decoration: overline"DATA/span Polling and Toggle
- Operating Current: 40 mA
- Standby Current: 0.2 mA
- Access Time: 70 ns
- Features: EEPROM, Other
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Supplier: Embedded Data Systems
Description: Operating Range: 2.8V to 5.25V, -40°C to +85°C • Minimum 100k Write Cycles Endurance • 15kV Built-in ESD Protection Common iButton Features • Digital Identification and Information by Momentary Contact. • Unique, Factory-Lasered and Tested 64-Bit Registration Number (8-Bit Family Code
- Density: 256 kbits
- Operating Temperature: -40 to 85 C
- Features: EEPROM
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Supplier: Renesas Electronics Corporation
Description: internal EEPROM to store all reference voltage data. The EEPROM features an endurance of 10,000 write cycles and a data retention of 20 years at 105°C. Combining gamma and VCOM reference voltage generators with low power operation and EEPROM, the ISL76534 provides
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Supplier: Allied Electronics, Inc.
Description: Features: Self-Timed Write Cycle and Page Write Mode Power On/Off Data Protection Circuitry Sequential Read Function
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Supplier: Renesas Electronics Corporation
Description: amplifier, and internal EEPROM to store all reference voltage data. The EEPROM features an endurance of 10,000 write cycles. Combining gamma and VCOM reference voltage generators with low power operation and EEPROM, the ISL24858 provides a complete reference
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Supplier: Euchner-U.S.A., Inc.
Description: Features CIS systems can be configured to meet your data transfer requirements Unlimited read cycles with write cycles up to 100 million Large storage capacity Interfaces to PLC's and PC's Large variety of carriers with EEPROM and FRAM storage technology Inductive
- Frequency: 125,000 Hz
- Memory: 256,000 bits
- Detection Range: 4 cm
- Features: Noncontact, Other, Read / Write
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Supplier: Newark, An Avnet Company
Description: RFID DATA CARRIER, 254BYTE, ROUND; Tag Type:RFID; Frequency:530kHz; Memory Size:254Byte; Product Range:-; Diameter:8mm; For Use With:V600 RFID; Height:5mm; Read/Write Cycles:100000; Tag Memory:EEPROM; Tag Technology:Passive RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: RFID DATA CARRIER, 254BYTE, RECTANGULAR; Tag Type:RFID; Frequency:530kHz; Memory Size:254Byte; Product Range:-; Depth:34mm; Diameter:8mm; For Use With:V600 RFID; Height:3.5mm; Read/Write Cycles:100000; Tag Memory:EEPROM; Width:34mm RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: speed and no write delays, it offers substantial write endurance and lower power consumption during writes compared to EEPROM. Capable of supporting 1014 read/write cycles, it is ideal for applications requiring frequent or rapid writes, such as data
- Density: 1,000 kbits
- Operating Temperature: -40 to 85 C
- Supply Voltage: 3.6 V
- Memory Category: FRAM
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Supplier: Infineon Technologies AG
Description: The EXCELON™ LP CY15B108QN-40SXI is an 8 Mb low-power, non-volatile memory employing advanced ferroelectric technology. With reliable data retention for 151 years and write operations at bus speed, it outperforms EEPROM and serial flash, offering substantial write endurance of
- Density: 8,000 kbits
- Operating Temperature: -40 to 85 C
- Supply Voltage: 1.8 V, 3.6 V
- Memory Category: FRAM
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Supplier: Infineon Technologies AG
Description: Up to 152 bytes EEPROM Organized in 38 blocks of 4 bytes each 128 bytes freely programmable user memory 24 bytes of service area reserved for UID, configuration, LOCK bytes, OTP block and manufacturer data EEPROM programming time per page < 4 ms EEPROM endurance minimum 10,000
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Supplier: Infineon Technologies AG
Description: reader and inlay design) Up to 64 bytes EEPROM Organized in 16 blocks of 4 bytes each 48 bytes freely programmable user memory 16 bytes of service area reserved for UID, LOCK bytes, OTP block EEPROM programming time per page < 4 ms EEPROM endurance minimum 10,000
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Supplier: Cypress Semiconductor Corp.
Description: Cypress F-RAM (Ferroelectric RAM) combines nonvolatile data storage with the high performance of RAM. F-RAM provides fast writes at full interface speed. F-RAM does not have any write delays and data is instantly nonvolatile. Traditional nonvolatile memories have delays of 5 or more
- Density: 4 to 4,000 kbits
- Pin Count: 8 to 48
- Supply Voltage: 1.8 V, 3 V, 5 V
- Features: Commercial, Industrial, Other
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Supplier: MagicRAM, Inc.
Description: and the cards are availablein standard or industrial temperatures. Features: PCMCIA / JEIDA standard Fast read access time 100,000 write/erase cycles per block 5V read voltage Built-in write protect switch Optional attribute memory: 8KB EEPROM Commercial (0°C to 70°C) and
- Main Capacity: 0.256 to 32 MB
- Access Time: 199.99999999999997 nanoseconds
- Operating Voltage: 5 V
- Flash Memory: Linear Flash Memory
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Supplier: Allegro MicroSystems Inc.
Description: angle sensing channels, digital signal processing, and output options: SPI, PWM, motor commutation (U, V, W), and encoder outputs (A, B, I). Also integrated into the devices are on-chip EEPROM technology, capable of supporting a high number of read/write cycles for flexible
- Tilt Angle: 360 degrees
- Supply Voltage: 3.7 to 18 volts
- Operating Temperature: 104 to 257 F
- Form Factor: Integrated Chip (IC)
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Supplier: MultiDimension Technology Co., Ltd.
Description: self-diagnosis and alarm function Operating temperature range: -40°C to 160°C Built-in EEPROM, over 10,000 write cycles Excellent resistance to environmental magnetic fields AEC-Q100 compliant Piecewise linear calibration mode: 5-point or 17-point calibration RoHS and REACH
- Maximum Angular Measurement: 360 degrees
- Classification: Sensor Element / Chip
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Conduct Research Top
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Optimizing Serial Bus Operations with Proper Write Cycle Times
The total write operation time for a Serial EEPROM is determined by three main elements: ? Number of bytes to load for each write operation ? Bus clock speed at which the write operation is loaded ? Fixed internal write cycle timer required for the programming operation
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EEPROM Endurance Tutorial
The definition of "endurance" (as applied to EEPROMs) contains various words and phrases that require clear definition and understanding. As shown in the following paragraphs, different manufacturers use different standards. "Endurance cycling" is a test performed by all manufacturers (and some
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1K, 2K and 4K Microwire EEPROM Migration
requirements. This document is intended to assist customers with migrating to the latest Microchip Technology Microwire EEPROMs from older versions of our products. Depending on the migration path taken, write cycle initiation may have also changed. Almost all of the methodologies remained the same
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Emulating Data EEPROM for PIC18 and PIC24 MCUs and dsPIC DSCs
without an internal data EEPROM. This application note's algorithm supports a selectable, Many applications store nonvolatile information in the emulated data EEPROM size of up to 255 locations. Flash program memory using table write and read The address range is between 0 and the size
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Using C to Interface 8051 MCUs with SPI Serial EEPROMs
* Voltage range from 1.8V to 5.5V * Low power operation The 25XXX series serial EEPROMs from Microchip * Temperature range from -40°C to +125°C Technology support a half-duplex protocol that functions on a master-slave paradigm that is ideally * Over 1,000,000 erase/write cycles suited to data stream
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Using a Hardware Module to Interface 8051 MCUs with SPI Serial EEPROMs
INTRODUCTION * Voltage range from 1.8V to 5.5V * Low power operation The 25XXX series serial EEPROMs from Microchip * Temperature range from -40°C to +125°C Technology support a half-duplex protocol that functions on a master-slave paradigm that is ideally * Over 1,000,000 erase/write cycles suited
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Using the MSSP Module to Interface I2C TM Serial EEPROMs with PIC18 Devices
with a strong understanding of communication with the 24XXX series serial EEPROMs using the MSSP module and I2C, thus allowing for more complex programs to be written in the future. The firmware consists of a single assembly program, organized into five sections: - Initialization - Byte Write - Byte Read
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Using a Timer to Interface 8051 MCUs with UNI/O(TM) Bus-Compatible Serial EEPROMs
need by developing the UNI/O TM bus, a low-cost, easy- * Over 1,000,000 erase/write cycles to-implement solution requiring only a single I/O pin for This application note is part of a series that provide bidirectional communication. source code to help the user implement the protocol UNI/O
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Smart Card Handbook 4th Edition Complete Document
This generator is faster than the one shown in Figure 7.22 on the preceding page because only one EEPROM write cycle is necessary for each session.
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http://focus.ti.com/lit/ds/symlink/cdce706.pdf
If the EEPROM write cycle is initiated, the data of the internal SMBus register is written into the EEPROM.
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Performance Improvement and Energy Saving Based on Increasing Locality of Persistent Data in Embedded Systems
Next, we explain an example implementation on the basis of a Java Card and evaluate our proposed approach in terms of needed EEPROM write cycles .
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http://focus.ti.com/lit/ds/symlink/cdce906.pdf
If the EEPROM write cycle is initiated, the data of the internal SMBus register is written into the EEPROM.
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http://focus.ti.com/lit/ds/symlink/cdce949-q1.pdf
If the EEPROM Write Cycle is initiated, the internal SDA register contents are written into the EEPROM.
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http://focus.ti.com/lit/ds/symlink/cdcel913.pdf
If the EEPROM write cycle is initiated, the internal SDA registers are written into the EEPROM.
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http://focus.ti.com/lit/ds/symlink/cdcel949.pdf
If the EEPROM Write Cycle is initiated, the internal SDA register contents are written into the EEPROM.
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Java Card Performance Optimization of Secure Transaction Atomicity Based on Increasing the Class Field Locality
Transaction atomicity is performed by multiple consecutive EEPROM write cycles what decreases the performance of a Java Card additionally.