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Supplier: ODG (Origin Data Global)
Description: 1.3V@1A 150ns Independent Type 1A 400V SMAF(DO-214AD) Fast Recovery / High Efficiency Diodes ROHS
- RoHS Compliant: RoHS Compliant
- Features: Step-recovery Diodes
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Supplier: ODG (Origin Data Global)
Description: DIODE GEN PURP 1KV 1A SMAF
- VF: 1.3 volts
- VR: 1,000 volts
- IR: 0.005 mA
- trr: 500 ns
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 1A Single 1kV 1.1V@1A SMAF Diodes - General Purpose ROHS
- VF: 1.1 volts
- VR: 1,000 volts
- Features: General Purpose (PN Junction Diodes)
- RoHS Compliant: RoHS Compliant
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Supplier: LCSC Electronics Technology (HK) Limited
Description: ±5% Single 4.84V~5.4V 1W 5.1V SMA(DO-214AC) Zener Diodes ROHS
- IR: 0.0025 mA
- VZ: 5.1 volts
- ZZT: 5 ohms
- PD: 1,000 milliwatts
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Supplier: VAST STOCK CO., LIMITED
Description: Varactor Diodes 10V C1=9.7-11.1pF
- Features: Other, Varactor Diodes
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 100V 820mV@1A 1A SOD-123F Schottky Barrier Diodes (SBD) ROHS
- VF: 0.82 volts
- VR: 100 volts
- IR: 0.005 mA
- RoHS Compliant: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include diode, rectifier, Schottky, switching diode,
- Tj: -55 C
- Features: Other, Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 1A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 1KV, 1A, Diode and Rectifier, Single Diodes. This
- Tj: -65 C
- Features: Rectifier Diode
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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- VF: 0.4 volts
- IF: 1 mA
- VR: 15 volts
- IR: 0.0002 mA
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Supplier: Win Source Electronics
Description: Manufacturer: Broadcom Limited Win Source Part Number: 1181890-HSMP-386F-TR1 Packaging: Tape and Reel Current - Max: 1A Diode Type: PIN - 1 Pair Common Cathode Categories: Discrete Semiconductor Products Supplier Device Package: SOT-323 Status: Obsolete Temperature Range - Operating: 150°C
- Tj: 150 C
- CT: 0.2 pF
- Features: Other, RF Diodes
- Diode Type: PIN Diodes
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Supplier: VAST STOCK CO., LIMITED
Description: Zener Diodes Low Noise Low VF
- Features: Zener Diodes
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 3@C1V/C4V Single 10V 270mΩ 6.1pF@4V,1MHz SOD-523 Diodes - Variable Capacitance ROHS
- VR: 10 volts
- IR: 0.000003 mA
- RoHS Compliant: RoHS Compliant
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Description: DIODE SBR 40V 1A SOD123F
- VF: 0.51 volts
- VR: 40 volts
- Features: Other, Rectifier Diode
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Supplier: Acme Chip Technology Co., Limited
Description: DIODE GEN PURP 50V 1A TS-1
- VF: 1.3 volts
- VR: 50 volts
- Features: Other, Rectifier Diode
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Description: Integrated Circuits (ICs) - Diodes - Diodes - Fast Recovery Rectifiers
- Tj: -55 to 150 C
- Diode Applications: Rectifier Diode
- Features: Step-recovery Diodes
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Description: RF DIODE PIN 100V SOT323
- Tj: 150 C
- Features: Other, RF Diodes
- Life Cycle Stage: Removed
- Package: SOT323
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Supplier: DigiKey
Description: Diode Standard 50V 1A Through Hole R-1
- Tj: -65 to 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 1002319-1N5711WS-7-F Packaging: Reel - TR Current - Max: 15mA Diode Type: Schottky - Single Capacitance @ Vr, F: 2pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 70V Power Dissipation (Max): 150mW Categories: Discrete Semiconductor
- Tj: -55 to 125 C
- PD: 150 milliwatts
- CT: 2 pF
- Features: Other, RF Diodes
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Supplier: Acme Chip Technology Co., Limited
Description: RD9.1F - ZENER DIODE
- Features: Other, Zener Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: Broadcom Limited Win Source Part Number: 106436-HSMS-282F-TR1G Packaging: Reel - TR Current - Max: 1A Diode Type: Schottky - 1 Pair Common Cathode Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 15V Resistance @ If, F: 12 Ohm @ 5mA, 1MHz Categories: Discrete
- Tj: 150 C
- CT: 1 pF
- Features: Other, RF Diodes
- Package: SOT323
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 1002318-1N5711W-7-F Packaging: Reel - TR Current - Max: 15mA Diode Type: Schottky - Single Capacitance @ Vr, F: 2pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 70V Power Dissipation (Max): 333mW Categories: Discrete Semiconductor
- Tj: -55 to 125 C
- PD: 333 milliwatts
- CT: 2 pF
- Features: Other, RF Diodes
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Supplier: DigiKey
Description: RF Diode Schottky - 1 Pair Common Cathode 15V 1A SOT-323
- VR: 15 volts
- Tj: 150 C
- CT: 1 pF
- Features: Other, RF Diodes
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Supplier: Acme Chip Technology Co., Limited
Description: DIODE RF SWITCH 30V 100MA ESC
- Tj: 125 C
- Life Cycle Stage: Not Recommended (Declining)
- Features: Other, RF Diodes
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Supplier: Utmel Electronic Limited
Description: DIODES INC. - 1N5711W-7-F - Kleinsignal-Schottky-Diode, Einfach, 70 V, 15 mA, 1 V, 125 °C
- VF: 1 volts
- IF: 15 mA
- VR: 70 volts
- IR: 0.0002 mA
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Supplier: Newark, An Avnet Company
Description: DIODE, SCHOTTKY, 1A, 40V, SOD-123F; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):1A; Forward Voltage VF Max:640mV; Forward Surge Current Ifsm Max:9A; Operating Temperature Max:150°C; RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: RF PIN DIODE; Diode Configuration:Single; Resistance @ If:4.7ohm; Reverse Voltage:120V; Diode Case Style:Planar; No. of Pins:2 Pin; Diode Capacitance:0.017pF; Forward Current:-; Operating Temperature Max:175°C; Product Range:- RoHS Compliant: Yes
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Supplier: SemiGen
Description: SemiGen’s 1N Series of Point Contact Mixer Diodes are designed for applications through KA band. Each device in this series is specially designed for low noise gure, impedance and VSWR. Our devices are drop in replacements for all military and commercial requirements. These diodes
- Diode Applications: Mixer
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Supplier: Utmel Electronic Limited
Description: DIODE ZENER 9.1V 1W SMA
- VF: 1.2 volts
- IR: 0.005 mA
- Tj: -65 to 150 C
- VZ: 9.1 volts
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Supplier: Utmel Electronic Limited
Description: Schottky Diodes & Rectifiers 20 VBR 1.2 pF
- VF: 0.41 volts
- Tj: 150 C
- Features: Other, Schottky Barrier Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: ProPhotonix, Ltd.
Description: QSI Company, Ltd., specializes in photonics semiconductor technology and its core component, the laser diode. With its rich, experienced engineering abilities and its high-tech production system that can process its designs to EPI, FAB and PKG, it can respond quickly to customers' needs.
- Wavelength Range: 775 to 800 nm
- Laser Power: 10 milliwatts
- Operating Voltage: 1.8 volts
- Operating Current Range: 25 to 40 milliamps
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Supplier: PUI - Projections Unlimited, Inc.
Description: Surface Mount (SMT) Switching Diodes
- Features: Other, RF Diodes
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Supplier: Micross Components, Inc.
Description: Micross’ discrete rectifier diodes are hermetic, non-cavity, double plug construction with category I metallurgical bonds suitable for operation at temperatures ranging from -65°C to +175°C. This makes them ideal for aerospace, military and industrial applications. Our diodes are
- IF: 350 mA
- VR: 3,000 volts
- trr: 250 ns
- IFSM: 5 amps
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Supplier: Nexperia B.V.
Description: LIN-bus line Asymmetrical diode configuration ensures an optimized protection against ElectroMagnetic Interferences (EMI) of a LIN Electronic Control Unit (ECU) Max. peak pulse power: PPP = 160W at tp = 8/20 μs Low clamping voltage: VCL = 40 V at IPP = 1 A Ultra low leakage current: IRM < 1
- Diode Applications: Protector
- RoHS Compliant: RoHS Compliant
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's PIN diodes are available in lineup as switching type for mobile and wireless LAN, and as attenuator type for tuner.
- VR: 50 volts
- Features: Other, PIN Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: Nexperia B.V.
Description: Dual Planar Schottky barrier diode in series configuration with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits Low forward voltage Low capacitance Applications Ultra high-speed
- VF: 240 to 0.24 volts
- IF: 200 mA
- VR: 30 volts
- IR: 0.000002 mA
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, offering a compact footprint. Dual Diode Configuration: Contains two diodes in series, providing design flexibility for various circuit topologies. Applications: DC/DC Converters Power Management Functions (read more)
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Diodes Incorporated 1N4148WSF-7 Overview Fast Switching Speed: Designed for high-speed switching applications with a fast reverse recovery time. Low Forward Voltage Drop: Efficient conduction minimizes power losses and (read more)
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-performance blue laser diode designed by OSRAM for demanding applications requiring high optical output and precision. Operating at a wavelength of 450 nm, it delivers up to 1.6 watts of continuous optical power, making it suitable for various applications such as laser projectors, machine vision, holography, and (read more)
Browse Diode Lasers Datasheets for World Star Tech -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
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USHIO LASER DIODES HL65303HD is a high power red laser diode by USHIO, distributed by World (read more)
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HL40033G – High Power 405 nm 1 Watt Violet Laser Diode Typical Features Optical output power: 1,000mW (CW) Violet Lasing: 405nm Typ (read more)
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A, maximum forward voltage of 1V @ 50mA. The reverse recovery time is just 4ns, with reverse leakage current of 5μA @ 75V. Additionally, capacitance is 4pF at 0V, 1MHz. Key Features: Fast recovery diode for high-speed switching circuits SOD-80 Mini (read more)
Browse Diodes Datasheets for Win Source Electronics -
), measuring just 0.58 mm x 0.28 mm x 0.15 mm (L x W x H) for space-constrained designs. Having working voltages of ±1 V, ±2 V, and ±3.6 V, these TVS diodes safeguard sensitive circuits from electrostatic discharge (ESD) and transient surges. This means they meet IEC 61000 (read more)
Browse Diodes Datasheets for DigiKey -
Good-Ark Semiconductor’s GSCLAMP0524PE is a quad TVS array designed to protect sensitive high-speed data lines from ESD, cable discharge events, and electrical fast transients. Featuring ultra-low 0.2pF line-to-line capacitance and low leakage current, it maintains high signal integrity in (read more)
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A diode is an electronic device with two terminals that conduct current primarily in one direction. They feature a low resistance in one direction (ideally (read more)
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Low fluence–high repetition rate diode laser hair removal 12‐month evaluation: Reducing pain and risks while keeping clinical efficacy
The purpose of this study was to evaluate the lasting efficacy and safety of low‐level fluence 810 nm (15 J/cm2) and high repetition rate (5 Hz) F1 Diode Laser™ therapy on hair reduction in patients with various skin types.
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Comprehensive ESD protection for flip-chip products in a dual gate oxide 65nm CMOS technology
All three I/O cells in this library also contain the A1, A2, B, E1 and F1 diodes .
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Composite Systems Decisions
1.2.3 Detector F: F1 ( diode ).
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Laser Dermatology
Diode lasers (800 nm) used for hair removal include: F1 Diode (Opusmed, Montreal, Canada) Leda (Quantel Derma, Erlangen, Germany) MeDioStar XT (Aesclepion, Jena, Germany) LightSheer Duet (Lumenis, Santa Clara, CA) Soprano XL (Alma Lasers, Buffalo Grove, IL) The F1 Diode (Opusmed) has …
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Lasers and Energy Devices for the Skin
F1 Diode (Opusmed .
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Physical means of treating unwanted hair
– F1 Diode Laser™ (Opusmed Inc., Montreal, Canada) – HR-Force (Alderm, N.A., LLC, Irvine, CA, USA) – LightSheer™ (Lumenis Inc., Santa Clara, CA, USA) – Lumenis One LightSheer™ (Lumenis Inc., Santa Clara, CA, USA) – Sonata™ (Orion Lasers, Fort Lauderdale …
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The plasmascope-a new opto-electronic method for velocity measurements in thermal plasmas
Since a light spot can only be located within k4diode interval, the distance this spot shifts is only resolved within f1 diode interval.
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Laser-Assisted Hair Removal
○ Several other 800-nm diode lasers (Apex-800, Iridex, Mountain View, Calif; F1 diode laser, Opus Medical, Montreal, Canada; Mediostar, Asclepion-Meditec, Jena, Germany; SLP1000, Palomar, Burlington, Mass; EpiStar, Nidek, Gamagori, Japan) are available.
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The Quasi-Active Microwave Power Safety Limiter
… feedback, appcaring between the diodes' impedance and microwave refracted siral feedback, have especially manifested themselves in the selection of the diode's JQ skength of coupling w1t11 the main transmission line and the length l between the planes of diodes F1 and IZ2.
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Bistable organic, organometallic, and coordination compounds for molecular electronics and spintronics
Action mechanism of molecular diode ( F1 and F2 are the Fermi levels of the metallic electrodes М1 and М2, respectively; φ is the work function of an electron, and U is the potential applied).