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Supplier: Infineon Technologies AG
Description: power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers. Summary of Features E-mode HEMT – normally OFF Ultrafast switching No reverse-recovery charge Capable of reverse conduction
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers. Summary of Features E-mode HEMT – normally OFF Ultrafast switching No reverse-recovery charge Capable of reverse conduction
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: -in-class power density Highest efficiency Improved thermal management Enabling smaller and lighter designs Excellent reliability Lowering BOM cost Applications Audio amplifier solutions Low power BDC/BLDC motor drives up to 72 V Photovoltaic Telecommunication infrastructure
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: Benefits Best-in-class power density Highest efficiency Improved thermal management Enabling smaller and lighter designs Excellent reliability Lowering BOM cost Applications Audio amplifier solutions Low power BDC/BLDC motor drives up to 72 V Photovoltaic Telecommunication
- Package Type: Other
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Supplier: Nexperia B.V.
Description: The GANE140-700DBA is a general purpose 700 V, 140 mO Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching
- Package Type: Other
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Supplier: Nexperia B.V.
Description: The GANE190-700BBA is a general purpose 700 V, 190 mO Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching
- Package Type: Other
- Polarity: N-Channel
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Supplier: Nexperia B.V.
Description: The GANE240-700BBA is a general purpose 700 V, 240 mO Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching
- Package Type: Other
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Supplier: Nexperia B.V.
Description: The GANE350-700BBA is a general purpose 700 V, 350 mO Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching
- Package Type: Other
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Supplier: Northrop Grumman Corporation
Description: Microelectronics Products & Services is now offering a line of Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) intended for military and challenging commercial wireless, high-power amplifier applications. GaN Power Amplifiers Products
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Frequency Range: 10000 to 46000 MHz
- Maximum Gain: 25.5 dB
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Supplier: Richardson RFPD
Description: CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity
- Amplifier Type: Power Amplifier
- Frequency Range: 2500 to 6000 MHz
- Maximum Gain: 25 dB
- Maximum Operating Voltage: 26 volts
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Supplier: Richardson RFPD
Description: CMPA5259050S is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) based monolithic microwave integrated circuit (MMIC). This MMICcontains a two-stage reactively matched amplifier design approach enablinghigh power and power added efficiency to be
- Amplifier Type: Power Amplifier
- Frequency Range: 5000 to 5900 MHz
- Maximum Gain: 26 dB
- Maximum Operating Voltage: 28 volts
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Supplier: APITech
Description: API Technologies' line of Gallium Nitride (GaN) Power Amplifiers utilize pulsed, solid state power amplifier technology and include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These power
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Supplier: Richardson RFPD
Description: CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift
- Amplifier Type: Power Amplifier
- Frequency Range: 20 to 6000 MHz
- Maximum Gain: 16.7 dB
- Maximum Operating Voltage: 50 volts
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Supplier: Richardson RFPD
Description: CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift
- Amplifier Type: Power Amplifier
- Frequency Range: 5500 to 8500 MHz
- Maximum Gain: 26.5 dB
- Maximum Operating Voltage: 28 volts
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Supplier: APITech
Description: API Technologies' complete line of Gallium Nitride (GaN) based power amplifiers and power amplifier drivers offer unparalleled reliability and performance. Utilizing the intrinsic physical properties of GaN like high heat capacity and thermal conductivity,
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Supplier: NuWaves Ltd.
Description: provides 44 dB of gain from 1700 MHz to 2400 MHz for continuous wave (CW) and near-constant-envelo pe waveforms. Based on the latest gallium nitride (GaN) technology, the NuPower 12D05A's 40% power efficiency and <10 in3 form factor make it ideal for size, weight, and
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1700 to 2400 MHz
- Maximum Gain: 45 dB
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12A01A L- & S-Band Power Amplifier is a small, highly efficient solid-state power amplifier module that provides 4 watts of linear RF power to boost performance of data links and transmitters. Based on the latest gallium nitride
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1000 to 2500 MHz
- Maximum Gain: 40 dB
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Supplier: NuWaves Ltd.
Description: , across the entire operating band. With a small form factor (3.9 cubic inches) and high efficiency operation (30% to 50%) based on state-of-the-art Gallium Nitride (GaN) power amplifier device technology, the NuPower L- & S-Band PA module is ideal for broadband RF
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1000 to 2500 MHz
- Maximum Gain: 42 dB
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Supplier: NuWaves Ltd.
Description: extension, electronic warfare (e.g. electronic attack), etc. With 20 dB of RF gain, the NuPower LS100A01 module is configured for an input drive level of +30 dBm from the transmitter/transcei ver. Based on state-of-the-art Gallium Nitride (GaN) device technology, the
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1600 to 2500 MHz
- Maximum Gain: 20 dB
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Supplier: Wolfspeed
Description: 50-W; 5200 – 5900-MHz; 28 V; GaN MMIC for Radar Power Amplifiers Cree’s CMPA5259050 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259050 ideal for
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Supplier: Wolfspeed
Description: 3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC Power Amplifier Cree’s CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide,
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Supplier: Wolfspeed
Description: 15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier Wolfspeed’s CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage,
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Supplier: Wolfspeed
Description: 2-W; 20-MHz – 6000-MHz; GaN MMIC Power Amplifier Wolfspeed’s CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide,
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Supplier: Qorvo
Description: The QPM2637 is a Gallium Nitride MMIC front-end module (FEM) designed for X-Band radar applications within the 9-10.5 GHz range. The MMIC combines a T/R switch, low-noise amplifier, and a power amplifier. The receive path has dual-outputs which offer 21dB gain and
- Device Type: Transceiver
- Features: RoHS Compliant
- IC Package Type: Other
- Number of Transmitters: 23 #
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Supplier: Qorvo
Description: The QPF4005 is a dual-channel multi-function Gallium Nitride MMIC front-end module targeted for 39GHz phased array 5G base stations and terminals. For each channel a multi-function MMIC die combines a low noise amplifier, a low insertion-loss high-isolation TR switch, and a
- Applications: Mobile / Wireless Systems
- Features: RoHS
- Form Factor / Package: Other
- Operating Frequency: 37000 to 40500 MHz
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Featured Products Top
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. Resistance to molten metal corrosion: aluminum nitride ceramics are not corroded by aluminum liquid and other molten metals and gallium arsenide, especially molten aluminum liquid. It has excellent corrosion resistance and can be used as crucibles and casting mold (read more)
Browse Specialty Ceramics Datasheets for Xiamen Unipretec Ceramic Technology Co., Ltd. -
high linearity of the RF signal Based on NXP’s low memory GaN process Manufactured in NXP’s Gallium Nitride fab in Chandler, Arizona (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
device reliability and reduces parasitic losses. Offered in both top-side (CCPAK1212i) and bottom-side cooled (CCPAK1212) package designs. The GAN039-650NTB, a 33 mΩ (typ.) Gallium Nitride (GaN) FET within the CCPAK1212i top-side cooling package, ushers in a new era of wide (read more)
Browse Power MOSFET Datasheets for Nexperia B.V. -
and Si823Hx ISO drivers with the launch of the Si82Ex/Fx value and performance isolated gate drivers. Both lines can be used to drive silicon MOSFET, IGBT, silicon carbide (SiC) and gallium nitride (GaN) devices. The family of (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
Infineon is uniquely positioned in the power semiconductor market, mastering all power technologies from silicon (Si) like CoolMOS™ SJ MOSFETs and IGBTs to wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN). Its CoolGaN™ devices will (read more)
Browse Network Equipment Datasheets for DigiKey -
The Analog Devices LTC7893 synchronous boost controller drives all N-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages from output voltages up to 100 V. The LTC7893 solves many of the challenges traditionally faced when using Ga (read more)
Browse IC Switching Voltage Regulators Datasheets for DigiKey -
electrical insulation and moderate thermal conductivity. Aluminum Nitride: Offers high thermal conductivity and electrical insulation, suitable for high-power applications. Silicon Nitride: Combines high thermal conductivity with mechanical strength and (read more)
Browse Industrial Ceramic Materials Datasheets for 3X Ceramic Parts Company Limited -
) semiconductors, such as silicon carbide and gallium nitride, have revolutionized this field. These materials operate at higher temperatures, voltages, and frequencies compared to traditional silicon, making them ideal for renewable energy systems and electric vehicles. The table below (read more)
Browse Microcontrollers (MCU) Datasheets for ODG (Origin Data Global) -
, portable, robotic, space and body-mounted electronics all share in similar requirements their design. Advanced electronic systems are rapidly evolving in their use of advance chip technologies from CMOS, and GaN, (Gallium Nitride), to MEMs technologies. These new chips are operating at significantly (read more)
Browse Micro Connectors and Nano Connectors Datasheets for Omnetics Connector Corporation -
Advanced Regulators: GaN and SiC Voltage Regulators Gallium Nitride (GaN) and Silicon Carbide (SiC) voltage regulators are better than traditional silicon regulators. They perform well in both heat and power efficiency. Power systems that need high power (read more)
Browse IC Voltage Regulators Datasheets for ODG (Origin Data Global)
Conduct Research Top
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Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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Reaching New Levels of Linearity in Passive Mixers with GaN Technology
When microwave engineers hear the words "Gallium. Nitride" (GaN), one thought usually comes to their. minds: power amplifiers. Due to its physical properties of high-breakdown voltage and high-thermal conductivity, GaN is ideally suited over its Gallium Arsenide (GaAs) counterpart
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Projects Agency (DARPA) to develop high power wide band amplifiers in gallium nitride. Intel's Moore echoes competitiveness concerns Intel Corp. co-founder Gordon Moore warned that the U.S. must boost spending on basic research and education in order to maintain global competitiveness. Moore, fellow
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Truly wideband linearization
Gain and phase transfer characteristics of a test gallium nitride power amplifier with and without linearization.
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US Army funds building of gallium nitride amplifier
BAE Systems has won a contract to build a gallium nitride power amplifier Demonstrator is part of DARPA's Disruptive Manufacturing Technologies programme .
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New products
Gallium Nitride Power Amplifier .
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Accurate thermal characterization of a GaN PA MMIC using Thermoreflectance thermography
In this paper, an accurate thermal characterization of a Gallium Nitride power amplifier Monolithic Microwave Integrated Circuit device using Thermoreflectance thermography is presented.
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A high-frequency power amplifier using GaN power cell technology
This paper describes the design, simulation, packaging and measurement of a 10-GHz Gallium Nitride power amplifier (PA).
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US contracts BAE Systems to develop protective amplifier
As part of the US Defense Advanced Research Projects Agency's Disruptive Manufacturing Technology programme, BAE Systems has been tasked with designing a 160-watt solid-state gallium nitride power amplifier for communications, electronic warfare and radar applications.
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More in Test & Measurement | Microwaves & RF
This year’s IMS showcased everything from digital-to-analog converters to gallium nitride power amplifiers and everything in between.
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More in Components | Microwaves & RF
This year’s IMS showcased everything from digital-to-analog converters to gallium nitride power amplifiers and everything in between.
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More in Mixed-signal semiconductors | Microwaves & RF
This year’s IMS showcased everything from digital-to-analog converters to gallium nitride power amplifiers and everything in between.
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Laboratory directed research and development 2006 annual report.
Gallium Nitride Power Amplifier Technology,” .