- Trained on our vast library of engineering resources.

Products & Services

See also: Categories | Featured Products | Technical Articles | More Information

Conduct Research Top

  • Microwave RF: GaN Devices Raising the Output-Power Performance Bar
    Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
  • Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
    The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
  • Reaching New Levels of Linearity in Passive Mixers with GaN Technology
    When microwave engineers hear the words "Gallium. Nitride" (GaN), one thought usually comes to their. minds: power amplifiers. Due to its physical properties of high-breakdown voltage and high-thermal conductivity, GaN is ideally suited over its Gallium Arsenide (GaAs) counterpart
  • EETimes.com | Electronics Industry News for EEs & Engineering Managers
    Projects Agency (DARPA) to develop high power wide band amplifiers in gallium nitride. Intel's Moore echoes competitiveness concerns Intel Corp. co-founder Gordon Moore warned that the U.S. must boost spending on basic research and education in order to maintain global competitiveness. Moore, fellow

More Information Top

Lock Indicates content that may require registration and/or purchase. Powered by IHS Goldfire