Gallium Nitride Power Amplifiers

Description: The GS61004B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61004B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high

• Features: Other

Description: The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

• Features: Other

Description: The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high

• Features: Other

Description: The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

• Features: Other

Description: API Technologies' line of Gallium Nitride (GaN) Power Amplifiers utilize pulsed, solid state power amplifier technology and include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These power

Description: The GANE350-700BBA is a general purpose 700 V, 350 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching capability No

• Features: Other

Description: The GANE190-700BBA is a general purpose 700 V, 190 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching capability No

• Features: Other

Description: The GANE240-700BBA is a general purpose 700 V, 240 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching capability No

• Features: Other

Description: The GANE140-700DBA is a general purpose 700 V, 140 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance. Features and benefits Enhancement mode - normally-off power switch Ultra high frequency switching capability No

• Features: Other

Description: Limited Samples NEW APN237 GaN Power Amplifier 13.5-15.5 13 40.5 44.5 Die Limited Samples NEW APN149 GaN HEMT High Power Amplifier 18-23 20 36 38 Die Limited Samples APN180 GaN HEMT High Power Amplifier 27-31 21 37 39 Die Pre-Production APN180FP Packaged GaN

• Frequency Range: 10,000 to 46,000 MHz
• Minimum Gain: 13 dB
• Maximum Gain: 25.5 dB
• Output Power( P_1dB): 34 to 40.499999999999986 dBm

Description: The HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth range of 2.7 GHz to 3.8 GHz, at an input power (PIN) of 18 dBm. The

• Frequency Range: 2,700 to 3,800 MHz
• Maximum Gain: 34.5 dB
• Minimum Operating Voltage: 28 volts
• Maximum Operating Voltage: 28 volts

Description: API Technologies' complete line of Gallium Nitride (GaN) based power amplifiers and power amplifier drivers offer unparalleled reliability and performance. Utilizing the intrinsic physical properties of GaN like high heat capacity and thermal conductivity,

Description: The NuPower™ 12A01A L- & S-Band Power Amplifier is a small, highly efficient solid-state power amplifier module that provides 4 watts of linear RF power to boost performance of data links and transmitters. Based on the latest gallium nitride (GaN)

• Frequency Range: 1,000 to 2,500 MHz
• Minimum Gain: 40 dB
• Maximum Gain: 40 dB
• Output Power( P_1dB): 36.020599913279625 dBm

Description: 3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC Power Amplifier Cree’s CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide,

Description: Wolfspeed’s CMPA2560025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal

Description: Wolfspeed’s CMPA0060002F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron

Description: Wolfspeed’s CMP5585030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal

Description: Mini-Circuits’ ZHL-50W-GAN+ and ZHL-50W-GANX+ are Class A, high power amplifiers that utilize a Gallium Nitride (GaN) push-pull output stage, which results in a higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. These amplifiers provide

• Frequency Range: 20 to 500 MHz
• Minimum Gain: 1.2 dB
• Maximum Gain: 1.2 dB
• Output Power( P_1dB): 46.2 to 48 dBm

Description: GaN Bias Controller/Sequencer Module. The MABC-001000-DP000L is a bias controller that provides proper gate voltage and pulsed drain voltage biasing for a device under test (DUT). Applicable DUT’s would be depletion-mode GaN (Gallium Nitride) or GaAs (Gallium Arsenide)

Description: The QPM2637 is a Gallium Nitride MMIC front-end module (FEM) designed for X-Band radar applications within the 9-10.5 GHz range. The MMIC combines a T/R switch, low-noise amplifier, and a power amplifier. The receive path has dual-outputs which offer 21dB gain and

• Number of Transmitters: 23 #
• Number of Receivers: 21 #
• Operating Frequency: 9,000 to 10,500 MHz
• Features: Other, RoHS Compliant

Description: The QPF4005 is a dual-channel multi-function Gallium Nitride MMIC front-end module targeted for 39GHz phased array 5G base stations and terminals. For each channel a multi-function MMIC die combines a low noise amplifier, a low insertion-loss high-isolation TR switch, and a

• Operating Frequency: 37,000 to 40,500 MHz
• Applications: Mobile / Wireless Systems
• Features: Other, RoHS