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Supplier: Pfaltz & Bauer, Inc.
Description: Gallium Phosphide
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Supplier: El-Cat, Inc.
Description: EL-CAT Inc. is a stocking distributor of Silicon Wafers, Compound Semiconductors and other Crystal Materials for use in electronics.
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Supplier: Accuris
Description: STANDARD TEST METHOD FOR WAVELENGTH OF PEAK PHOTOLUMINESCENCE AND THE CORRESPONDING COMPOSITION OF GALLIUM ARSENIDE PHOSPHIDE WAFERS
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Supplier: Accuris
Description: STANDARD PRACTICE FOR PREPARATION OF SAMPLES OF THE CONSTANT COMPOSITION REGION OF EPITAXIAL GALLIUM ARSENIDE PHOSPHIDE FOR HALL EFFECT MEASUREMENTS
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Supplier: ASTM International
Description: 1.1 This practice covers a procedure to be followed to free the constant composition region of epitaxially grown gallium arsenide phosphide, GaAs(1x)Px, from the substrate and graded region on which it was grown in order to measure the electrical properties of only the
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Supplier: ASTM International
Description: 1.1 This practice covers a procedure to be followed to free the constant composition region of epitaxially grown gallium arsenide phosphide, GaAs(1x)Px, from the substrate and graded region on which it was grown in order to measure the electrical properties of only the
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Supplier: ASTM International
Description: 1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs(1 x)Px. 1.2 Photoluminescence measurements indicate the composition only in the
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Supplier: ASTM International
Description: 1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs(1 x)Px. 1.2 Photoluminescence measurements indicate the composition only in the
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Supplier: Broadcom Inc.
Description: This lamp is a Gallium Arsenide Phosphide on Gallium Phosphide High Efficiency Red Light Emitting diode. The Low Profile T-1 3/4 package provides space savings and is excellent for backlighting applications.
- Color: Red
- Forward Voltage: 1.9 volts
- Lens Type: Domed Lens
- Luminous Intensity: 13.8 milliCandela
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Supplier: Broadcom Inc.
Description: This lamp is a Gallium Arsenide Phosphide on Gallium Phosphide High Efficiency Red Light Emitting diode. The Low Profile T-1 3/4 package provides space savings and is excellent for backlighting applications.
- Color: Red
- Forward Current: 25 milliamps
- Forward Voltage: 1.9 volts
- Lens Type: Domed Lens
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Supplier: Broadcom Inc.
Description: This clear, non-diffused lamp out-perform conventional LED lamps. By utilizing new higher intensity material, we achieve superior product performance. This HLMP-1540 is Gallium Arsenide Phosphide on Gallium Phosphide, yellow, light emitting diodes.
- Color: Green
- Forward Current: 25 milliamps
- Forward Voltage: 2.2 volts
- Lens Type: Domed Lens
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Supplier: Broadcom Inc.
Description: This lamp is a Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting diode. The Low Profile T-1 3/4 package provides space savings and is excellent for backlighting applications.
- Color: Yellow
- Forward Current: 20 milliamps
- Forward Voltage: 2 volts
- Lens Type: Domed Lens
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Supplier: Allied Electronics, Inc.
Description: T-13/4 (5 mm) Low Profile LED Lamp, High Intensity Diffused and non-diffused types General purpose leads Reliable and rugged The HLMP-335x series are Gallium Arsenide Phosphide on Gallium Phosphide high efficiency red light emitting diodes.
- Color: Red
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Supplier: Allied Electronics, Inc.
Description: The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. Suitable for all SMT assembly and solder process. Available on tape and reel. Ideal for backlighting.
- Color: Yellow
- Forward Current: 30 milliamps
- Forward Voltage: 2.1 volts
- Lens Type: Flat Lens
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Supplier: Allied Electronics, Inc.
Description: The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. Suitable for all SMT assembly and solder process. Available on tape and reel. Ideal for backlighting.
- Color: Red
- Forward Current: 30 milliamps
- Forward Voltage: 2 volts
- Lens Type: Flat Lens
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Supplier: Allied Electronics, Inc.
Description: The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode Features 10mm diameter big lamp Reliable and rugged Long life — solid state reliability RoHS compliant
- Color: Red
- Forward Voltage: 2 volts
- Luminous Intensity: 36 milliCandela
- Peak Wavelength: 625 nm
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Supplier: RS Components, Ltd.
Description: improvement in their performance. The HLMPâ??1340 Series Lamps are Gallium Arsenide Phosphide on Gallium Phosphide red light emitting diodes. The HLMPâ??1440 Series are Gallium Arsenide Phosphide on Gallium Phosphide yellow light emitting
- Color: Green, Other
- Forward Voltage: 2.2 volts
- Luminous Intensity: 45 milliCandela
- Peak Wavelength: 569 nm
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Supplier: RS Components, Ltd.
Description: improvement in their performance. The HLMPâ??1340 Series Lamps are Gallium Arsenide Phosphide on Gallium Phosphide red light emitting diodes. The HLMPâ??1440 Series are Gallium Arsenide Phosphide on Gallium Phosphide yellow light emitting
- Color: Yellow, Other
- Forward Voltage: 2.1 volts
- Luminous Intensity: 45 milliCandela
- Peak Wavelength: 585 nm
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Supplier: RS Components, Ltd.
Description: improvement in their performance. The HLMPâ??1340 Series Lamps are Gallium Arsenide Phosphide on Gallium Phosphide red light emitting diodes. The HLMPâ??1440 Series are Gallium Arsenide Phosphide on Gallium Phosphide yellow light emitting
- Color: Green, Other
- Forward Voltage: 2.2 volts
- Luminous Intensity: 21 milliCandela
- Peak Wavelength: 560 nm
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Supplier: RS Components, Ltd.
Description: improvement in their performance. The HLMPâ??1340 Series Lamps are Gallium Arsenide Phosphide on Gallium Phosphide red light emitting diodes. The HLMPâ??1440 Series are Gallium Arsenide Phosphide on Gallium Phosphide yellow light emitting
- Color: Yellow, Other
- Forward Voltage: 2.1 volts
- Luminous Intensity: 45 milliCandela
- Peak Wavelength: 585 nm
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Supplier: Rogue Valley Microdevices, Inc.
Description: Founded in 2003, Rogue Valley Microdevices is the first company to establish a microelectronics manufacturing facility in beautiful Southern Oregon. Headquartered in Medford Oregon, we have quickly established ourselves as one of the premier MEMS Foundries in the United States. Our manufacturing
- Application: Aerospace / Defense, Biotechnology / Medical, Automotive, Computer / PC, Fiber Optics / Telecommunications, Imaging / Vision, Wireless
- Device Type: Analog, ASIC , High Voltage, Logic, Memory, Microprocessor, Oscillator / Transistor-Oscillator (TO), Passive Components, Power Electronics, Sensors, Specialty / Other
- Device Voltage: 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3 V, 3.3 V, 5 V, Other
- Location: North America, United States Only, Northwest US Only
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Supplier: Wafer World, Inc.
Description: . The 12,000 sq ft facility is situated in Palm Beach County, FL. Wafer World, Inc. is an ISO 9001:2008 and AS9100:2004 certified manufacturing facility for Silicon, Gallium Arsenide, Germanium, Indium Phosphide, Sapphire and Quartz.
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Supplier: RFMW
Description: reliability Indium Gallium Phosphide (InGaP) Heterojunction Bipolar Transistor (HBT) technology. The device is internally matched and mounted in a 20-pin, 6 x 6 mm Multi-Chip Module (MCM) Surface-Mounted Technology (SMT) package, which allows for a highly manufacturable low cost
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Supplier: RFMW
Description: Indium Gallium Phosphide (InGaP) Heterojunction Bipolar Transistor (HBT) technology. The device is internally matched and mounted in a 20-pin, 4 x 4 mm Quad Flat No-Lead (QFN) Surface-Mounted Technology (SMT) package, which allows for a highly manufacturable low cost solution.
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Supplier: RFMW
Description: reliability Indium Gallium Phosphide (InGaP) Heterojunction Bipolar Transistor (HBT) technology. The device is internally matched and mounted in a 20-pin, 6 x 6 mm Multi-Chip Module (MCM) Surface-Mounted Technology (SMT) package, which allows for a highly manufacturable low cost
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Supplier: MACOM
Description: directly modulated lasers (DML). Developed using Gallium Arsenide, Indium Phosphide and Silicon Germanium technologies, these drivers offer solutions for every application from FTTx and short range pluggable transceivers to ultra-long-haul transponders for submarine applications.
- Data Rate: 2.80E7 to 6.40E7 kbps
- Device Type / Applications: Laser Driver
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Supplier: MACOM
Description: directly modulated lasers (DML). Developed using Gallium Arsenide, Indium Phosphide and Silicon Germanium technologies, these drivers offer solutions for every application from FTTx and short range pluggable transceivers to ultra-long-haul transponders for submarine applications.
- Data Rate: 500000 to 2.81E7 kbps
- Device Type / Applications: Laser Driver
- IC Package Type: LGA, QFN, Other
- Pd: 0.0950 to 240000 milliwatts
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Supplier: MACOM
Description: directly modulated lasers (DML). Developed using Gallium Arsenide, Indium Phosphide and Silicon Germanium technologies, these drivers offer solutions for every application from FTTx and short range pluggable transceivers to ultra-long-haul transponders for submarine applications.
- Data Rate: 1.13E7 to 4.60E7 kbps
- Device Type / Applications: Laser Driver
- Supply Voltage: -5 V, 3 V, 3.3 V, 3.6V, 5 V, Other
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package that
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 2000 to 18000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 12.5 dB
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Supplier: Skyworks Solutions, Inc.
Description: an internal band-gap regulator that eliminates the need for an external reference supply. The PA is activated with a standard 1.8 V to 5.0 V low current CMOS logic signal. The device is fabricated using Indium Gallium Phosphide (InGaP) Heterojunction Bipolar Transistor (HBT)
- Amplifier Type: Power Amplifier
- Frequency Range: 5150 to 5930 MHz
- Maximum Gain: Over 35 dB
- Maximum Operating Voltage: 5 volts
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Nex Corporation designs and manufactures proprietary high power semiconductor infrared laser diode-based assemblies and optical amplifiers for automotive LiDAR, military, medical, and industrial applications. SemiNex’s products are based on advanced quantum physics and employ high-quality indium phosphide (read more)
Browse Diode Lasers Datasheets for SemiNex Corporation
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Best candidate materials for fast speed response and high transmission performance efficiency of acousto optic modulators
These materials are common materials for acousto-optic devices such as silica glass (SiO2), tellurium dioxide (TeO2), gallium phos- phide , and gallium arsenide.
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Materials for Infrared Windows and Domes: Properties and Performance
Gallium arsenide, gallium phosphide , germanium and silicon ...
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For example, gallium arsenide, a direct gap material, and gallium phosphide , an indirect gap material, form a continuous series of solid solutions, .
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Thermal Expansion and Some Characteristics of the Interatomic Bond Strength in Gallium and Indium Phosphides
Gallium phosphide 300 .
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Thermal Expansion of Gallium and Indium Phosphides: Thermodynamic Evaluation
Reference Gallium phosphide 300 .
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The Status of Transistor Research in Compound Semiconductors
Indium antimonide and indium arsenide may be of interest for extremely high-frequency transistors operating at low temperatures, The aluminum com- pounds, gallium phosphide and silicon carbide, are potentially useful for very high operating temperatures at the cost of high-frequency performance.
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Optical Absorption of Impurities and Defects in Semiconducting Crystals
D.G. Thomas, J.J. Hopfield, Isoelectronic traps due to nitrogen in gallium phosphide .
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Springer Handbook of Condensed Matter and Materials Data
Gallium phosphide .
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Photocathodes
However, early success was achieved with the use of gallium phosphide substrate.