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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Thyristor Type: Gate Turn-off Thyristor (GTO)
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Thyristor GTO 2.5KV 3-Pin
- Thyristor Type: Gate Turn-off Thyristor (GTO)
- VRRM: 100 volts
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Supplier: Littelfuse, Inc.
Description: active VAr controllers. Offering both symmetrical devices for applications with a reverse blocking requirement e.g. current sourced inverters and asymmetric blocking devices for applications where no reverse blocking requirement exists e.g. voltage sourced inverters. Gate Turn-off Thyristors
- IC Package Type: Other
- TJ: 125 C
- Thyristor Type: Silicon Controlled Rectifier (SCR), Gate Turn-off Thyristor (GTO)
- VDRM: 1200 volts
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Supplier: Radwell International
Description: BIDIRECTIONAL THYRISTOR, REVERSE CONDUCTING THYRISTOR, GATE TURN-OFF THYRISTOR (GTO), GATE-COMMUTATED THYRISTOR (GCT). FREE 2 YEAR RADWELL WARRANTY
- Thyristor Type: Gate Turn-off Thyristor (GTO)
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER 01/30/2013, THYRISTOR, GTO REPLACEMENT & INSTALL KIT, 290 KVA, INU, 730 KVA, FOR 1336 AC DRIVE, OPEN STYLE, MOUNTABLE, SAME AS: 144444, SAME AS: RP-144444, SAME AS: 1336-144444, SAME AS: 1352-144444, SAME AS: PN-144444. FREE 2 YEAR RADWELL WARRANTY
- Thyristor Type: Gate Turn-off Thyristor (GTO)
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER 06/30/2013, THYRISTOR GTO RPLACEMENT KIT, 180 KVA, 460 VAC, OPEN STYLE, MOUNTABLE, SAME AS: 144443, SAME AS: RP-144443, SAME AS: 1336-144443, SAME AS: 1352-144443, SAME AS: PN-144443. FREE 2 YEAR RADWELL WARRANTY
- Thyristor Type: Gate Turn-off Thyristor (GTO)
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Supplier: Littelfuse, Inc.
Description: active VAr controllers. Offering both symmetrical devices for applications with a reverse blocking requirement e.g. current sourced inverters and asymmetric blocking devices for applications where no reverse blocking requirement exists e.g. voltage sourced inverters. Gate Turn-off Thyristors
- IC Package Type: Other
- TJ: 125 C
- Thyristor Type: Silicon Controlled Rectifier (SCR), Gate Turn-off Thyristor (GTO)
- VDRM: 2500 volts
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Supplier: Littelfuse, Inc.
Description: active VAr controllers. Offering both symmetrical devices for applications with a reverse blocking requirement e.g. current sourced inverters and asymmetric blocking devices for applications where no reverse blocking requirement exists e.g. voltage sourced inverters. Gate Turn-off Thyristors
- IC Package Type: Other
- TJ: 125 C
- Thyristor Type: Silicon Controlled Rectifier (SCR), Gate Turn-off Thyristor (GTO)
- VDRM: 4500 volts
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Supplier: Littelfuse, Inc.
Description: active VAr controllers. Offering both symmetrical devices for applications with a reverse blocking requirement e.g. current sourced inverters and asymmetric blocking devices for applications where no reverse blocking requirement exists e.g. voltage sourced inverters. Gate Turn-off Thyristors
- IC Package Type: Other
- TJ: 125 C
- Thyristor Type: Silicon Controlled Rectifier (SCR), Gate Turn-off Thyristor (GTO)
- VDRM: 2500 volts
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Description: Provides standards for the following categories of discrete semi-conductor devices: - (reverse-blocking) (triode) thyristors, - asymmetrical (reverse-blocking) (triode) thyristors, - reverse-conducting (triode) thyristors, - bidirectional triode thyristors (triacs), -
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Supplier: VAST STOCK CO., LIMITED
Description: SCRs BT169G/TO-92/STANDAR D MARKING
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Supplier: Infineon Technologies AG
Description: 4500 V GTO - Freewheeling diode disc GTO - Freewheeling Diode discs 4500 V, 1461 A with 100 mm diameter in a ceramic housing. Summary of Features High current High blocking voltage Light-triggered types available Highest robustness
- Diode Applications: Power Diode
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: The D1251S GTO Freewheeling Diode discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 76mm and a height of 14mm. Summary of Features High current High blocking voltage Light-triggered types available Highest robustness Highest reliability High case
- IFSM: 18000 amps
- Package Type: Other
- RoHS Compliant: Yes
- VRRM: 4500 volts
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Supplier: Infineon Technologies AG
Description: The D1381S GTO - Freewheeling Diode discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 100mm and a height of 26mm. Summary of Features High current High blocking voltage Light-triggered types available Highest robustness Highest reliability High
- Diode Applications: Power Diode
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: The D921S GTO - Freewheeling Diode discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 100mm and a height of 26mm. Summary of Features High current High blocking voltage Light-triggered types available Highest robustness Highest reliability High
- IFSM: 28000 amps
- Package Type: Other
- RoHS Compliant: Yes
- VRRM: 4500 volts
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Supplier: Richardson RFPD
Description: Fast Recovery Rectifier Diode|•Small recovered charge|•Soft recovery|•Up to 1000 V reverse voltage|•Hermetic metal case with glass insulator|•Threaded stud ISO M6 or 1/4-28 UNF|•SKR: cathode to stud|Typical Applications:|•Inver se diode for power transistor, GTO thyristor, asymmetric
- IF: 100000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- trr: 600 ns
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Supplier: Richardson RFPD
Description: Fast Recovery Rectifier Diode|•Small recovered charge|•Soft recovery|•Up to 1200 V reverse voltage|•Hermetic metal case with glass insulator|•Threaded stud ISO M5 or 10-32 UNF|•SKN: anode to stud SKR: cathode to stud|Typical Applications:|•Inver se diode for power transistor, GTO
- IF: 41000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- trr: 600 ns
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Supplier: Richardson RFPD
Description: diodes for power transistors, GTO thyristors, asymmetric thyristors|•SMPS, inverters, choppers|•A.C. motor control, uninterruptible power supplies (UPS)
- IF: 120000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- trr: 2100 ns
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Supplier: Mersen
Description: mounting styles and body sizes along with a broad range of ampere ratings allow greatest flexibility in equipment design. The Mersen PSC fuses have been engineered to provide state-of-the-art protection for SCR?s, diodes, thyristors, GTO?s and IGBT devices. They have pure silver die
- Approvals / Standards: IEC (UMF) Approval
- Current Rating: 1500 amps
- Material: Ceramic
- Mounting: Other
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Supplier: Mersen
Description: mounting styles and body sizes along with a broad range of ampere ratings allow greatest flexibility in equipment design. The Mersen PSC fuses have been engineered to provide state-of-the-art protection for SCR?s, diodes, thyristors, GTO?s and IGBT devices. They have pure silver die
- Approvals / Standards: IEC (UMF) Approval
- Current Rating: 350 amps
- Material: Ceramic
- Mounting: Other
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Supplier: Mersen
Description: mounting styles and body sizes along with a broad range of ampere ratings allow greatest flexibility in equipment design. The Mersen PSC fuses have been engineered to provide state-of-the-art protection for SCR?s, diodes, thyristors, GTO?s and IGBT devices. They have pure silver die
- Approvals / Standards: IEC (UMF) Approval
- Current Rating: 750 amps
- Material: Ceramic
- Mounting: Other
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Supplier: Mersen
Description: engineered to provide state-of-the-art protection for semiconductors: diodes, thyristors, GTO's and IGBT devices. Fuses are assembled with pure silver, die-cut elements embedded in solidified sand, which helps control arcing characteristics for a lower I²t and high interrupting rating
- Approvals / Standards: IEC (UMF) Approval
- Current Rating: 100 amps
- Material: Ceramic
- Mounting: Other
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http://calhoun.nps.edu/public/bitstream/handle/10945/4674/09Jun_Vineyard.pdf?sequence=1
This thesis presents data from a simulation study of the thermal and electrical characteristics of a Gate Turn Off ( GTO ) thyristor .
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Semiconductor Power Devices
Only special configurations of the thyristor can be turned off via the gate, these are the Gate Turn-Off ( GTO ) thyristors which will be treated later.
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Power Electronics
Series Resonant Converters Based on GTO Thyristors . . . . . . .
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Power Electronics: Converters Applications and Design 3rd Edition Complete Document
The controllable switch category includes several device types including bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), gate turn off ( GTO ) thyristors , and insulated gate bipolar transistors (IGBTs).
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Flexible AC Transmission Systems (FACTS)
This drawback has been eliminated with the introduction of Gate Turn-Off ( GTO ) thyristors [6].
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An Annotated Bibliography of HVDC Transmission and FACTS Devices, 1996-1997.
The revolving speed of reversible pump-turbine can be regulated using an inverter of GTO thyristor for the secondary exciter of variable speed pumped storage power plants.
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Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors
Abstract—SiC GTO thyristors may soon be the best available choice for very high-power switching.
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Minimisation of current crowding during turn-off of power GTO devices
Abstract - The maximum controllable anode current is influenced by the current crowding phenomenon observed in GTO thyristors during turn-off.
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Semiconductor-power building elements
Abb. 3.4.12 gate-Turn-Off ( GTO ) thyristor .
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Power electronics
GTO of thyristor for of High-Power Frequency of Converters.