High Sensitivity Photodiodes

Description: With a quantum yield > 70% at 400 nm and maximum sensitivity at 600 nm, these components are particularly suited to biomedical applications. Special features High quantum yield at short wavelengths High gain Low capacitance Fast rise times

• Active Area Diameter or Length: 0.8000 mm
• Dark Current: 1 to 5 nA
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Package / Mounting: Through Hole Technology (THT), Other

Description: The Series 8r offers high sensitivities in the red and green wavelength range and is optimized for 650 nm. The new photodiodes are ideal for applications which demand fast rise times and low capacitance such as laser distance meters (LDM), laser rangefinders (LRF), high

• Active Area Diameter or Length: 0.2300 mm
• Dark Current: 0.2000 to 0.5000 nA
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Package / Mounting: Other

Description: These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths

• Active Area Diameter or Length: 0.5000 mm
• Dark Current: 1.5 nA
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Material: Silicon

Description: Single Photodiode with identical Outer Dimensions PR5040 is a single silicon photodiode with rectangular shape having the same outer dimensions as the segmented types PR5001-PR5030. The photodiode has a low dark current combined with a high sensitivity. The dies

• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon
• Photodiode Package / Mounting: Surface Mount Technology (SMT)
• Spectral Response: Visible, IR

Description: These avalanche photodiodes were developed specifically for laser range finding and laser scanning applications such as safety scanners, 3D-mapping, environmental monitoring and high resolution LIDAR systems for autonomous driving. The series provides fundamental technology for

• Active Area Diameter or Length: 0.5000 mm
• Dark Current: 0.5000 nA
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Package / Mounting: Surface Mount Technology (SMT), Other

Description: Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of f4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity

• Active Area Diameter or Length: 4.1 mm
• Active Area Height: 4.1 mm
• Dark Current: 30 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: High UV resistance, high-speed response, photodiodes for UV monitor The S16586 is a high-speed response Si PIN photodiode that has achieved high reliability for monitoring ultraviolet light. They exhibit low sensitivity deterioration under UV light

• Active Area Diameter or Length: 0.8000 mm
• Active Area Height: 0.8000 mm
• Dark Current: 0.0150 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: Si PIN photodiode for violet-laser detection The S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed response is achieved despite the large photosensitive area. Features - High

• Active Area Diameter or Length: 5 mm
• Active Area Height: 5 mm
• Dark Current: 5 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: Large-area Si PIN photodiode for direct radiation detection The S13993 is an unsealed type large area Si PIN photodiode for direct radiation detection. Since the photosensitive area is coated with Al, there is no sensitivity in the ultraviolet to near infrared region. Features -

• Active Area Diameter or Length: 10 mm
• Active Area Height: 10 mm
• Dark Current: 6 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: edge above. Both types offer a low dark current combined with a high sensitivity. The dies are moulded into a small plastic leadless optical DFN package. APPLICATIONS: LASER beam alignment position detection ambient light detection

• Dark Current: 0.0440 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon

Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based devices

• Active Area Diameter or Length: 0.0044 mm
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Material: Silicon Carbide
• Photodiode Package / Mounting: Other

Description: the PR5021 are symmetrically designed. Both types offer a low dark current combined with a high sensitivity. The dies are moulded into a small plastic leadless optical DFN package. APPLICATIONS: LASER beam alignment position detection ambient light detection

• Dark Current: 0.0520 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon

Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for

• Active Area Diameter or Length: 0.0400 mm
• Active Area Height: 230 mm
• Dark Current: 0.0500 nA
• Operating Temperature: -20 to 85 C

Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available

• Active Area Diameter or Length: 3 mm
• Dark Current: 15 nA
• Operating Temperature: -40 to 70 C
• PN, PIN, or Avalanche: Avalanche Photodiode

Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available

• Active Area Diameter or Length: 0.3000 mm
• Dark Current: 1 nA
• Operating Temperature: -40 to 70 C
• PN, PIN, or Avalanche: Avalanche Photodiode

Description: current combined with a high sensitivity and an antireflective coating on the die. PR5010 is available in an optical DFN package with a very small form factor. APPLICATIONS: Laser beam alignment Optical encoders Position detection Identify the ratio visible/infrared light

• Dark Current: 0.0080 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon

Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of

• Active Area Diameter or Length: 2.57 mm
• Noise Equivalent Power (NEP): 9.10E-15 W/Hz^½
• Operating Temperature: -20 to 60 C
• PN, PIN, or Avalanche: PIN Photodiode

Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of

• Active Area Diameter or Length: 11.33 mm
• Noise Equivalent Power (NEP): 4.10E-14 W/Hz^½
• Operating Temperature: -20 to 60 C
• PN, PIN, or Avalanche: PIN Photodiode

Description: The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low

• Dark Current: 25 nA
• Operating Temperature: -55 to 125 C
• PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
• PSD: Yes

Description: Features Daylight Filter; BPW34FS Clear Lens; BPW34CS Chip Size 3mm square Sensitive area 2.55 mm square High Sensitivity Low Capacitance Reception Angle 120 degrees Surface Mount Package options: Suffix GR : Gullwing ( overmount PCB ) Suffix ZR : Z bend ( undermount PCB )

• Output Type: Current Output
• Photosensor Type: PIN Photodiode
• Spectral Response: 730 to 1100 nm

Description: The ISL29020 is a low power, high sensitivity, integrated light sensor with Isup2/supC (SMBus Compatible) interface. Its state-of-the-art photodiode array provides close-to human eye response and good IR rejection. This ADC is capable of rejecting 50Hz and 60Hz flicker caused by

• Input (Supply) Voltage: 2.25 to 3.3 volts
• Sensor Type: Light Sensor

Description: . . Features of the BPW46 PIN photodiodes:. Side looking. Through hole mounted. Radiant sensitive area: 7.5 mm². High photo sensitivity. High radiant sensitivity. Fast response times. Angle of half intensity: 65° Mounting Type = Through Hole Length = 5mm Width =

Description: The TSL3301-CL is a high-sensitivity 300-dpi, linear optical sensor array with integrated 8-bit analog-to-digital converters. The array consists of 102 pixels, each measuring 85 µm (H) by 77 µm (W) and spaced on 85 µm centers. Associated with each pixel is a charge integrator

• Array: Yes
• Operating Temperature: -25 to 85 C

Description: The TSL238T light-to-frequency converter combines a silicon photodiode and a current-to-frequency converter on a single monolithic CMOS integrated circuit. Output is a square wave (50% duty cycle) with frequency directly proportional to light intensity (irradiance) on the photodiode.

• Input (Supply) Voltage: 2.7 to 5.5 volts
• Operating Temperature: -40 to 85 C

Description: The TSL237 light-to-frequency converter combines a silicon photodiode and a current-to-frequency converter on a single monolithic CMOS integrated circuit. Output is a square wave (50% duty cycle) with frequency directly proportional to light intensity (irradiance) on the photodiode.

• Input (Supply) Voltage: 2.7 to 5.5 volts
• Operating Temperature: -40 to 85 C
• Sensor Type: Light Sensor

Description: The 2151 Femtowatt Silicon Photoreceiver is ideal when you need the ultimate in low-light-level detection in the 300 to 1050 nm range. When used with a chopper and a lock-in amplifier, these receivers can easily achieve sensitivity levels in the femtowatt range. These receivers provide

• Photosensor Type: PIN Photodiode

Description: The Nexera SR UHPLC system is built around the SPD-M30A photodiode array detector, which has several new features for unmatched performance in sensitivity and stability, linearity, spectral resolution, and peak deconvolution. This high-end system is designed to produce the best

• Analysis Method: Analytical Analysis
• Built in Chromatograph: Yes
• Display Options: Digital Readout
• Injection Method: Auto-sampler Injection

Description: The high resolution Xlin-1.7-3000 InGaAs detector is specifically designed for earth observation. The detector is based on mechanical butting of three InGaAs photodiode arrays with each 1024 pixels on a 25 µm pixel pitch, forming a nearly continuous line of 2900 pixels. The sensors

• Horizontal Resolution: 3 lines
• Imaging Technology / Camera Type: Other
• Operating Temperature: -40 to 185 F
• Performance Features: Line Scan

Description: Orion is a digital high speed line scan sensor with configurable photo-diode size. Over the SPI interface the photo-diode size can be configured to a 10µm x 10µm size or 10µm x 200µm size. Independently form the photo-diode the conversion capacitance can be configured

• Array Type: Linear Array
• Dynamic Range: 59.44 dB
• Image Sensor Output: Other
• Image Sensor Type: Monochrome

Description: daily analytical work, the Breeze 2 HPLC System integrates simplicity, sensitivity, accuracy, and reliability. It is ideal for any organization seeking a quality HPLC platform with limited budget and chromatography experience including university laboratories, government laboratories, or

• Analysis Method: Analytical Analysis
• Computer Interface: Yes
• Detection Method: Ultraviolet / Visible Light Detector, Refractive Index Detector, Fluorescence Detector, Light Scattering Detector
• Instrument Type: Fixtured or Permanent

Description: The 1414-50 High Speed Multimode Fiber-Optic Detector has a flat response in both amplitude and phase up to 25 GHz and are optimized for frequency-domain applications. The high-sensitivity near-IR photodetector uses a 25 µm diameter back-illuminated InGaAs Schottky photodiode

• Bandwidth: 0.0 to 25000 MHz
• Connector Type: Other
• Receiver Rise Time: 0.0140 ns

Description: BH1792GLC is optical sensor for heart rate monitor IC in which LED driver, green light and IR detection photodiode are incorporated. This device drives LED and provides the intensity of light reflected from body. LED brightness can be adjusted by LED driver current. The photodiode

• Operating Temperature: -20 to 85 C
• RoHS Compliant: Yes
• Sensor Grade / Operating Range: Consumer

Description: photodiode having the high sensitivity for green light, excellent wavelength selectivity and excellent lrcut characteristics achieves accurate pulse wave detection. Documents and Data for BH1790GLC Evaluation Board Evaluation Board Manual (PDF; 527KB) Software Manual (PDF;

Description: data with an integrated high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405, 450, 505, 546, 578, 630, 670, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm