High Sensitivity Photodiodes

Description: With a quantum yield > 70% at 400 nm and maximum sensitivity at 600 nm, these components are particularly suited to biomedical applications. Special features High quantum yield at short wavelengths High gain Low capacitance Fast rise times

• Spectral Response Range: 350 to 750 nm
• Active Area Diameter or Length: 0.8000000000000002 mm
• Rise Time: 1 ns
• Dark Current: 1 to 5 nA

Description: These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths

• Spectral Response Range: 850 to 1,064 nm
• Active Area Diameter or Length: 4 mm
• Rise Time: 6 ns
• Dark Current: 50 nA

Description: The Series 8r offers high sensitivities in the red and green wavelength range and is optimized for 650 nm. The new photodiodes are ideal for applications which demand fast rise times and low capacitance such as laser distance meters (LDM), laser rangefinders (LRF), high speed

• Spectral Response Range: 650 nm
• Active Area Diameter or Length: 0.23 mm
• Rise Time: 0.18 ns
• Dark Current: 0.2 to 0.5 nA

Description: These avalanche photodiodes were developed specifically for laser range finding and laser scanning applications such as safety scanners, 3D-mapping, environmental monitoring and high resolution LIDAR systems for autonomous driving. The series provides fundamental technology for

• Spectral Response Range: 950 nm
• Active Area Diameter or Length: 0.5 mm
• Rise Time: 1.6 ns
• Dark Current: 0.5 nA

Description: Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity

• Sensitivity: 0.5 A/W
• Spectral Response Range: 190 to 1,100 nm
• Active Area Diameter or Length: 4.1000000000000005 mm
• Active Area Height: 4.1000000000000005 mm

Description: Single Photodiode with identical Outer Dimensions PR5040 is a single silicon photodiode with rectangular shape having the same outer dimensions as the segmented types PR5001-PR5030. The photodiode has a low dark current combined with a high sensitivity. The dies

• Photodiode Spectral Response: IR, Visible
• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon
• Photodiode Package: Surface Mount Technology (SMT)

Description: Dual-element, plastic package photodiode The S4204 is a dual-element Si PIN photodiode molded into plastic packages. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. Custom devices (with different element shapes, number

• Sensitivity: 0.65 A/W
• Spectral Response Range: 320 to 1,100 nm
• Dark Current: 1 nA
• Array: Array

Description: Photodetector module: high sensitivity

• Spectral Response Range: 800 to 1,100 nm
• Features: Other

Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available

• Sensitivity: 42 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 3 mm
• Rise Time: 5 ns

Description: optical switching and sensing requiring high speed, consistency and high reliability.Marktech manufactured InP Pin Photo Diodes using InGaAs/InP technology have a spectral sensitivity in the 800nm to 1750nm range for applications requiring low dark current, high speed and

• Sensitivity: 50 to 55 A/W
• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 0.20000000000000004 mm
• Active Area Height: 500.00000000000006 mm

Description: Two Triangular shaped Silicon Junctions PR5030 is a dual silicon photodiode with two separate cathodes and one common anode. Each photodiode has a triangular shape to form an interface along the diagonal of the die. Therefore, the two segments allow to resolve a position of a slit or

• Sensitivity: 0.5 A/W
• Operating Temperature: -40 to 85 C
• Dark Current: 0.044 nA
• Photodiode Spectral Response: IR, Visible

Description: 3 compact Silicon Junctions on a single Die PR5020 and PR50221 are triple silicon photodiodes with three separate cathodes and one common anode. Therefore, the three segments allow to resolve two transitions. With a wider and thinner photodiode in the center of the die, the PR5020 and

• Sensitivity: 0.58 A/W
• Operating Temperature: -40 to 85 C
• Dark Current: 0.052 nA
• Photodiode Spectral Response: IR, Visible

Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of

• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 11.33 mm
• Operating Temperature: -20 to 60 C
• Noise Equivalent Power (NEP): 0.000000000000041 W/Hz^½

Description: 180 VDC. These SiC UV APDs are a solid state replacement for UV PMTs (Photo Multiplier Tubes). Besides responding only to the UV, the tough silicon carbide (SiC) provides: Stability in high energy UV applications Higher temperature stability than silicon The general specifications are:

• Active Area Diameter or Length: 0.0044 mm
• Photodiode Type: Avalanche Photodiode
• Features: Other
• Photodiode Material: Silicon Carbide

Description: The TSL237 light-to-frequency converter combines a silicon photodiode and a current-to-frequency converter on a single monolithic CMOS integrated circuit. Output is a square wave (50% duty cycle) with frequency directly proportional to light intensity (irradiance) on the photodiode.

• Input (Supply) Voltage: 2.7 to 5.5 volts
• Operating Temperature: -40 to 85 C
• Sensor Type: Light Sensor

Description: The TSL238T light-to-frequency converter combines a silicon photodiode and a current-to-frequency converter on a single monolithic CMOS integrated circuit. Output is a square wave (50% duty cycle) with frequency directly proportional to light intensity (irradiance) on the photodiode.

• Input (Supply) Voltage: 2.7 to 5.5 volts
• Operating Temperature: -40 to 85 C
• Sensor Type: Light Sensor

Description: The ISL29020 is a low power, high sensitivity, integrated light sensor with Isup2/supC (SMBus Compatible) interface. Its state-of-the-art photodiode array provides close-to human eye response and good IR rejection. This ADC is capable of rejecting 50Hz and 60Hz flicker caused by

• Input (Supply) Voltage: 2.25 to 3.3 volts
• Sensor Type: Light Sensor

Description: Features Daylight Filter; BPW34FS Clear Lens; BPW34CS Chip Size 3mm square Sensitive area 2.55 mm square High Sensitivity Low Capacitance Reception Angle 120 degrees Surface Mount Package options: Suffix GR : Gullwing ( overmount PCB ) Suffix ZR : Z bend ( undermount PCB )

• Spectral Response: 400 to 1,100 nm
• Output Type: Current Output
• Module Type: PIN Photodiode

Description: Silicon PN Photodiode, TO-5 Package, 9 μA (Typ.) Short Circuit Current, -0.05 %⁄K (Typ.) Temperature Coefficient High sensitivity Low dark current High shunt resistance Excellent linearity For photodiode and photovoltaic cell operation Lead-free component BPW21R is

Description: The Nexera SR UHPLC system is built around the SPD-M30A photodiode array detector, which has several new features for unmatched performance in sensitivity and stability, linearity, spectral resolution, and peak deconvolution. This high-end system is designed to produce the best

• Analysis Method: Analytical Analysis
• Injection Method: Auto-sampler Injection
• General Features: Built in Chromatograph
• User Interface: Digital Front Panel

Description: conversion capacitance, resulting in a full well capacity of 300ke- results in outstandingly high SNR. The smaller conversion capacitance, resulting in a full well capacity of 30ke- results in very high sensitivity, ideal for high speed scanning applications or detecting

• Pixel Size: 200 µm
• Dynamic Range: 59.44 dB
• Operating Temperature: 0 to 50 C
• Supply Voltage: 3.3 volt

Description: dark current leakage, and low saturation voltage make this device ideal for interfacing with TTL circuits. Available custom binned to customer specifications or screened to MIL-PRF-19500. Features: · Hermetically sealed · High sensitivity · Small package · Suitable for

• Sensitivity: 100 A/W
• Spectral Response Range: 290 to 1,200 nm
• Rise Time: 50,000 ns
• Operating Temperature: -55 to 125 C

Description: Planar Photodiode, 55 μA (Typ.) Short Circuit Current, 180 pF (Typ.) Junction Capacitance Low capacitance, fast switching time Linear response vs irradiance IR blocking filter The planar photodiode is designed to operate in either photoconductive or photovoltaic modes. This diode

Description: enabling low Dark Signal Non Uniformity (DSNU). A selectable integration time and capacitor allow for fi ne tuning the conversion gain in fl ight. You can choose from High Sensitivity (HS) mode and High Dynamic Range (HDR) mode. Furthermore the high maximum line rate of

• Horizontal Resolution: 3 lines
• Operating Temperature: -40 to 185 F
• Vertical Resolution: 1,024 lines
• Performance: Line Scan

Description: The 1414-50 High Speed Multimode Fiber-Optic Detector has a flat response in both amplitude and phase up to 25 GHz and are optimized for frequency-domain applications. The high-sensitivity near-IR photodetector uses a 25 μm diameter back-illuminated InGaAs Schottky

• Receiver Rise Time: 0.014 ns
• Bandwidth: 0 to 25,000 MHz
• Features: Other

Description: photodiode has a large photosensitive area with high sensitivity and smoothly varying spectral response characteristics in UV region.

• Applications: Industrial

Description: BH1792GLC is optical sensor for heart rate monitor IC in which LED driver, green light and IR detection photodiode are incorporated. This device drives LED and provides the intensity of light reflected from body. LED brightness can be adjusted by LED driver current. The photodiode

• Operating Temperature: -20 to 85 C
• Applications: Consumer
• Standards and Certifications: RoHS Compliant

Description: GOS doped with rare earth ion has relatively high light output and extremely low afterglow, the emission peaks range from 470-900 nm with spectral sensitivity of silicon photodiodes, and it has been widely used for CT scanners, security instruments and non destructive testing.

• Applications: Optics / Optical Grade
• Features: Other

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405, 450, 505, 546, 578, 630, 670, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: The TSL3301−CL is a high-sensitivity 300-dpi, linear optical sensor array with integrated 8-bit analog-to-digital converters. The array consists of 102 pixels, each measuring 85 μm (H) by 77 μm (W) and spaced on 85 μm centers. Associated with each pixel is a charge integrator/amplifier

• Operating Temperature: -25 to 85 C
• Array: Array

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 492, 510, 546, 578, 630, 700, & 800 nm wavelengths.

• Spectral / Wavelength Range: 340 to 800 nm

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405 436, 480, 510, 546, 580, 630, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm