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Supplier: Gefran
Description: This digital amplifier measures at the strain gage bridge eight times per millisecond which gives a high oversampling range. This gives a stable signal output with high accuracy and reproducibility. The digitalised signal can be trensformed into various outputs.
- Bandwidth: 8 kHz
- Integral Filter: Yes
- Low Pass Cutoff Frequency: 0.7000 kHz
- Maximum Output: 10 +/-volts
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Supplier: Gefran
Description: This digital amplifier measures at the strain gage bridge eight times per millisecond which gives a high oversampling range. This gives a stable signal output with high accuracy and reproducibility. The digitalised signal can be trensformed into various outputs.
- Bandwidth: 0.8000 kHz
- Integral Filter: Yes
- Low Pass Cutoff Frequency: 0.1000 kHz
- Maximum Output: 10 +/-volts
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Supplier: ROHM Semiconductor GmbH
Description: BD62321HFP is full bridge driver for brush motor applications. This IC can operate at a wide range of power-supply voltages (from 6V to 32V), supporting output currents of up to 3A. MOS transistors in the output stage allow for PWM signal control. The replacement is also easy because
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Operating Temperature: -25 to 85 C
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor USA, LLC
Description: BD62321HFP is full bridge driver for brush motor applications. This IC can operate at a wide range of power-supply voltages (from 6V to 32V), supporting output currents of up to 3A. MOS transistors in the output stage allow for PWM signal control. The replacement is also easy because
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Operating Temperature: -25 to 85 C
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor USA, LLC
Description: BD62222HFP is full bridge driver for brush motor applications. This IC can operate at a wide range of power-supply voltages (from 6V to 27V), supporting output currents of up to 2.5A. MOS transistors in the output stage allow for PWM signal control. The replacement is also easy because
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Operating Temperature: -25 to 85 C
- Packing Method: Tape Reel
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Supplier: ODG (Origin Data Global)
Description: TRIPLE HALF-BRIDGE HIGH-VOLTAGE
- IC Package Type: SOIC / SOP, Other
- Operating Temperature: -40 to 125 C
- Regulator Category: Linear Regulator
- Special Features: Other
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Supplier: ODG (Origin Data Global)
Description: HIGH VOLTAGE HALF-BRIDGE GATE DR
- IC Package Type: SOIC / SOP, Other
- Operating Temperature: -40 to 150 C
- Regulator Category: Linear Regulator
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Supplier: Richardson RFPD
Description: FAST DIODE FULL BRIDGE POWER MODULE. Application: Uninterruptible Power Supply (UPS), Induction Heating, Welding Equipment, High Speed Rectifiers. Features: Ultra Fast Recovery Times, Soft Recovery Characteristics, High Blocking Voltage, High Current, Low Leakage
- IF: 60000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Bridge
- RoHS Compliant: Yes
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Supplier: Richardson RFPD
Description: DIODE FULL BRIDGE POWER MODULE. Application: Uninterruptible Power Supply (UPS), Induction Heating, Welding Equipment, High Speed Rectifiers. Features: Ultra Fast Recovery Times, Soft Recovery Characteristics, High Blocking Voltage, High Current, Low Leakage
- IF: 100000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Bridge
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor GmbH
Description: The BD63565EFV provides a dual H-bridge motor driver which features wide range of motor power supply voltage from 1.8V to 16.0V and low power consumption to switch low ON-Resistance DMOS transistors at high speed. This small surface mounting package is most suitable for mobile
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Operating Temperature: -40 to 85 C
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: The BD63576NUX provides a single H-bridge motor driver which features wide range of motor power supply voltage from 2.0V to 10.0V and low power consumption to switch low ON-Resistance DMOS transistors at high speed. This small surface mounting package is most suitable for mobile
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Operating Temperature: -30 to 85 C
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: The BD63573NUV provides a single H-bridge motor driver which features wide range of motor power supply voltage from 2.0V to 16.0V and low power consumption to switch low ON-Resistance DMOS transistors at high speed. This small surface mounting package is most suitable for mobile
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Operating Temperature: -30 to 85 C
- Packing Method: Tape Reel
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Supplier: RDP Electrosense
Description: 308 and E309 have high and low limits with voltage-free relay outputs. The E308 has a shunt calibration facility to enable calibration checks to be made.A very wide range of gain adjustment ensures that our amplifiers are compatible with the vast majority of LVDT and strain gauge
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Supplier: ODG (Origin Data Global)
Description: 600V HIGH VOLTAGE 3 PHASE BRIDGE
- IC Package Type: SOIC / SOP, Other
- Operating Temperature: -40 to 125 C
- Regulator Category: Linear Regulator
- Special Features: Other
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Supplier: ODG (Origin Data Global)
Description: IC H-BRIDGE HIGH SIDE 36PSSOP
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
- Regulator Category: Linear Regulator
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM offers a wide lineup of H-bridge drivers in different supply voltages (7V/18V/36V) and output currents (0.5A/1A/2A) to meet the needs of a variety of applications. Our standard products also contain a VREF variable function that contributes to lower power consumption and greater
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: SOP, Other
- Operating Temperature: -25 to 85 C
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM offers a wide lineup of H-bridge drivers in different supply voltages (7V/18V/36V) and output currents (0.5A/1A/2A) to meet the needs of a variety of applications. Our standard products also contain a VREF variable function that contributes to lower power consumption and greater
- Driver Type: Dual Gate Driver (Half-bridge)
- IC Package Type: Other
- Operating Temperature: -25 to 85 C
- Packing Method: Tape Reel
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Supplier: Critical Velocity Enterprises, LLC
Description: weight over the others. Using high efficiency mosfets, this H-bridge will deliver the maximum power to your motors with minimal power loss. This allows you to independently control the speed and direction of 2 DC motors. Features: 5 V to 28 V Operation High efficiency MOSFET
- Application Categories: Other
- Configuration: PC Board
- Continuous Output Current: 2 amps
- Drive Type: DC Brushed Motor
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Supplier: ValueTronics International, Inc.
Description: from: 0.00001 mH to 99999 H Test frequencies from: 12 Hz to 100 kHz Test voltages from: 5 mV to 1.275 V Measurement speeds up to 17 per second Displays: Measured values Percentages
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Supplier: Microchip Technology, Inc.
Description: capability up to 200°C junction A programmable dead time is included to avoid peak currents within the H-bridge Integrated charge pump to provide gate voltages for high-side drivers and to supply the gate of the external battery reverse protection NMOS
- Application Categories: PWM Drive
- Configuration: IC / PCB-Mounted
- Continuous Output Current: 0.1000 amps
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Supplier: Semikron, Inc.
Description: MOSFET Modules - Best in class switching performance SEMIKRON produces MOSFET (Metal Oxide Semiconductor Field Effect Transistor) modules in single switch, halfbridge, H-bridge and 6 PACK configuration in SEMITOP and SEMITRANS packages.The available MOSFET modules in the voltage range
- Configuration: Half-Bridge, H-Bridge
- Output Current: 80 to 335 amps
- Output Voltage: 100 to 200 volts
- Technology: MOSFET
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Supplier: Microchip Technology, Inc.
Description: on-chip, including a charge pump for driving the high-side N-channel MOSFETs. The total forward drop (bridge offset) introduced by the IdealBridge™ rectifier is only 192 mV at 0.6A, compared to a standard bridge rectifier that typically presents 2000 mV of forward drop.
- Transistor Type: MOSFET
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Supplier: Critical Velocity Enterprises, LLC
Description: weight over the others. Using high efficiency mosfets, this H-bridge will deliver the maximum power to your motors with minimal power loss. This allows you to control the speed and direction of a DC motor. Features: 5 V to 28 V Operation High efficiency MOSFET design for cool
- Application Categories: Other
- Configuration: PC Board
- Continuous Output Current: 2 amps
- Drive Type: DC Brushed Motor
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Supplier: Data Device Corporation (DDC)
Description: High power H-Bridge brush-motor drive with internal drive circuitry. (PWR-82340)200 V (drain/source) breakdown voltage,(PWR-82342)5 00 V (drain/source) breakdown voltage, and 30 Amps continuous/50 Amps peak motor current.
- AC Input Phase: Three Phase
- Commutation (if Brushless): Trapezoidal, Sinusoidal
- Configuration: IC / PCB-Mounted
- Continuous Output Current: 5 amps
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Supplier: Vincotech GmbH
Description: Equivalent: F4-33MR12W1M1H_B76 Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to
- Configuration: H-Bridge
- Output Current: 40 amps
- Output Voltage: 1200 volts
- Technology: SiC, Other / Specialty Technology
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Supplier: Vincotech GmbH
Description: Kelvin Emitter for improved switching performance Integrated DC capacitor Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch
- Configuration: H-Bridge
- Output Current: 80 amps
- Output Voltage: 900 volts
- Technology: SiC, Other / Specialty Technology
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Supplier: Vincotech GmbH
Description: Dual halfbridge Integrated DC capacitor Kelvin Emitter for improved switching performance Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch
- Configuration: H-Bridge
- Output Current: 20 amps
- Output Voltage: 1200 volts
- Technology: SiC, Other / Specialty Technology
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Supplier: Vincotech GmbH
Description: Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up Convex shaped
- Configuration: H-Bridge
- Output Current: 80 amps
- Output Voltage: 1200 volts
- Technology: SiC, Other / Specialty Technology
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Supplier: Microchip Technology, Inc.
Description: . The outputs VA and VB are configured as an H bridge and are switching in opposite states to achieve 180V peak-to-peak across the EL lamp. Additional Features 1.8 to 6.5V operating supply voltage DC to AC conversion Separately adjustable lamp and converter
- IC Package Type: Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 802556-TND524VS-TL-H Packaging: Reel Mounting Style: SMD Applications: Use For General Technology: Power MOSFET Interface: On/Off Part Status: Obsolete (End Of Life) Output Configuration: Half Bridge
- Operating Temperature: -55 to 150 C
- Packing Method: Tape Reel, Other
- Supply Voltage: 10 to 20 volts
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Supplier: Microchip Technology, Inc.
Description: transistors A programmable dead time is included to avoid peak currents within the H-bridge Integrated charge pump to provide gate voltages for high-side drivers and to supply the gate of the external battery reverse protection NMOS 5V/3.3V regulator and current limitation
- Application Categories: PWM Drive
- Configuration: IC / PCB-Mounted
- Continuous Output Current: 0.1000 amps
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Supplier: Infineon Technologies AG
Description: MOTIX™ TLE9854QXW is the perfect fit for single-phase BLDC applications in high temperature TLE9854QXW is part of the MOTIX™ TLE985x Infineon Embedded Power IC product family. The single chip 2-phase motor driver integrates the industry standard Arm® Cortex®-M0 core
- Clock Frequency: 40 MHz
- Interface: Other Interface
- Operating Temperature: 347 F
- Operating Voltage: 5.5 to 28 volts
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Supplier: Infineon Technologies AG
Description: supply: 5.5V to 29V On-chip clock generation CRC engine for data integrity 72KB flash, EEPROM emulation, 6KB RAM LIN protocol support (LINUART) High voltage monitoring pin (MON) Fast synchronous communication (SSC) Two-phase bridge
- Clock Speed: 40 MHz
- Data Bus: 32 Bit
- Life Cycle Stage: Other
- Operating Temperature: -40 to 175 C
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Flexible Power Transmission: The HVDC Options
Also, the addition of redundant switches, as required for operational reliability, would result in higher costs if fewer higher voltage H - bridges were used.
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Stacked high/low voltage level H-bridge circuit for gradient amplifier of MRI system
Against the specialty of gradient amplifier, a test platform based on the stacked low and high voltage H - Bridge is built.
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FPGA implementation of generalized modulation for hybrid multilevel inverter with fixed ratio DC link voltage
A hybrid inverter consists of number of high voltage H - bridge cells, each operating at the fundamental frequency and a low voltage PWM operated H-bridge cell.
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Voltage and power balance control for a cascaded multilevel solid state transformer
The switching devices in high voltage H - bridges and low voltage H-bridges are 6.5kV IGBT and 600V IGBT respectively.
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High efficiency hybrid cascade inverter for photovoltaic generation
According to the unbalanced characteristics of DC buses, a control method is developed for HCI, which consists of stair-case wave modulation for high voltage H - bridges and carrier PWM for low voltage H-bridges.
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Cascaded H-Bridge Voltage Reinjection—Part I: A New Concept in Multilevel Voltage–Source Conversion
…switches and capacitors required for chains consisting of high or low voltage H-bridges are the same, but the capacitor size of each low rated H-bridge is smaller than the size of each capacitor in the high voltage H - bridge alternative.
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Comparison of 10-kV SiC power devices in solid-state transformer
The main switch devices in the AC/DC rectifier and high voltage H - bridge of the Dual Active Bridge (DAB) converter are 10-kV SiC power devices.
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Design and development of Generation-I silicon based Solid State Transformer
The switching devices in high voltage H - bridge and low voltage H-bridges in Fig. 2 are 6.5kV silicon IGBT and 600V silicon IGBT respectively.
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Multilevel dynamic voltage restorer
…hannonic perfomce using the same number of H-bridges as a cascaded inverter, However, when considering cases of semiconductor failure, hybrid inverters are less reliable (especially tri-mry inverter) since a fault in the higher voltage H - bridge will significantly limit the…
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Advanced High Voltage Power Device Concepts
High Voltage H - Bridge .