InGaAs Detector

Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include both

• Active Area Diameter or Length: 1 mm
• Dark Current: 1 to 10 nA
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Indium Gallium Arsenide

Description: Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech manufactured InP

• Active Area Diameter or Length: 0.1000 mm
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Indium Gallium Arsenide
• Photodiode Package / Mounting: Other

Description: The 818-BB-35F High Speed Biased Fiber-Optic Detector features a 1 meter long FC connectorized singlemode fiber coupled to a 1000 to 1650 nm InGaAs detector with a 0.032 mm active diameter and a <25 ps rise time. It includes a built-in bias supply consisting of two standard 3 V

• Bandwidth: 0.0 to 15000 MHz
• Connector Type: Other
• Photodiode Type: PIN
• Receiver Rise Time: 0.0250 ns

Description: The 818-IG/DB InGaAs Photodetector is supplied with a NIST traced calibration report that details individual detector responsivity measured with and without attenuator. Exclusive OD3 attenuator technology extends the calibrated optical dynamic range of our photodiode sensor heads by

Description: The 1623 InGaAs Nanosecond Optical Detector is similar to 800-1700 nm photodetectors with moderate gain and large bandwidth that many of us have built from scratch over and over again. It is ideal for use as a general purpose detector with Q-switched or CW lasers, and it's large

• Bandwidth: 0.0 to 500 MHz
• Connector Type: Other
• Photodiode Type: PIN
• Receiver Rise Time: 1 ns

Description: The Model 1014, 45 GHz InGaAs Fiber-Optic Biased Photodetector makes ultra high-speed measurements over 500-1630 nm easy. The self-contained module connects directly to test instruments like digital oscilloscopes, spectrum analyzers, and network analyzers for lightwave time- and frequency

• Bandwidth: 0.0 to 45000 MHz
• Connector Type: Other
• Receiver Rise Time: 0.0090 ns

Description: 4� x 6�) for portable, process, and lab applications. The InGaAs detector is a Sensors Unlimited linear photo diode array with 512 pixels (1024 optional) 25μm by 500μm tall to provide maximum sensitivity. The detector has an integrated thermo

• Application Software Included: Yes
• Computer Interface Options: Serial Interface, Parallel Interface
• Data Processing Functions: Yes
• Data Storage / Data Logger: Yes

Description: Wide spectral response range (0.5 to 1.7 µm), Active area: 1 mm dia. The G10899-01K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 µm to 1.7 µm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 µm to 1

• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Dark Current: 5 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: Wide spectral response range (0.5 to 1.7 µm), Active area: 2 mm dia. The G10899-02K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 µm to 1.7 µm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 µm to 1

• Active Area Diameter or Length: 2 mm
• Active Area Height: 2 mm
• Dark Current: 25 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: Wide spectral response range (0.5 to 1.7 µm), Active area: 3 mm dia. The G10899-03K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 µm to 1.7 µm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 µm to 1

• Active Area Diameter or Length: 3 mm
• Active Area Height: 3 mm
• Dark Current: 75 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: Wide spectral response range (0.5 to 1.7 µm), active area 0.3 mm dia. The G10899-003K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 µm to 1.7 µm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 µm to 1

• Active Area Diameter or Length: 0.3000 mm
• Active Area Height: 0.3000 mm
• Dark Current: 1.5 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: OSI Laser Diode, Inc.‘s (LDI) InGaAs PIN detector provides both small size and high performance in a miniature coaxial module. Designed to provide high responsivity and low leakage, LDI’s detector modules exhibit low back reflection along with low polarization dependent loss

• Active Area Diameter or Length: 0.0750 mm
• Dark Current: 0.0500 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: PIN Photodiode

Description: . This unit is equipped with a dedicated high speed InGaAs detector array working up to 1.7 µm and comes in three speed versions: 400, 800 and 1700 Hz. It allows you to visualize the ultra high speed features of your specific research application. The TE1-cooling reduces dark current

• Camera Function: Still
• Features: Cooled Sensor
• Horizontal Resolution: 640 lines
• Imaging Technology / Camera Type: Other

Description: The Bobcat-320-Gated SWIR camera operates in the 0.9 to 1.7µm spectral band. It provides extremely short integration times down to 100 ns. The Bobcat-320-Gated makes use of a highly sensitive TE1-cooled InGaAs detector that has a 20 µm pixel pitch. This compact gated imaging camera

• Camera Function: Still
• Features: Cooled Sensor
• Horizontal Resolution: 320 lines
• Imaging Technology / Camera Type: Other

Description: The Detector can provide demultiplexing of up to 8 channels, additional tapping and / or attenuation and is customizable over a wide optical spectrum. Features Opto-electronic interface with detectors Up to 8 InGaAs PIN diodes, 1260 – 1620 nm

Description: FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. These large active area devices are ideal for

• Active Area Diameter or Length: 1 mm
• Noise Equivalent Power (NEP): 2.45E-14 W/Hz^½
• Operating Temperature: -40 to 75 C
• PN, PIN, or Avalanche: PIN Photodiode

Description: FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics' large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 1620nm, allowing high sensitivity to weak signals. These large active area devices are ideal for

• Active Area Diameter or Length: 3 mm
• Noise Equivalent Power (NEP): 4.25E-14 W/Hz^½
• Operating Temperature: -40 to 75 C
• PN, PIN, or Avalanche: PIN Photodiode

Description: InGaAs APD In Coaxial Package For Fiber Optic Communication And OTDR Applications

• Active Area Diameter or Length: 0.0800 mm
• Dark Current: 7 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: Avalanche Photodiode

Description: MODULE OPTICAL RCVR INGAAS PIN

• PN, PIN, or Avalanche: PIN Photodiode

Description: The NR6300 Series is an InGaAs APD in TO-CAN package designed for sub assemblies used in OTDR Test Equipment

• Active Area Diameter or Length: 0.0300 mm
• Dark Current: 5 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: Avalanche Photodiode

Description: . Product Features 4 Mb/s, 52 Mb/s, 155 Mb/s, 622 Mb/s, 1 Gb/s data rates High Responsivity and Low Dark Current InGaAs Pin Detector High Sensitivity Wide Dynamic Range Single Supply Operation Hermetic Package Single Ended

• Cable Type: Multimode
• Data Rate: 4 to 622 Mbps
• Operating Temperature: -40 to 185 F
• Photodiode Semiconductor: InGaAs (900nm to 1700nm)

Description: The NR4510 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications.

• Active Area Diameter or Length: 0.0500 mm
• Dark Current: 500 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: Avalanche Photodiode

Description: The NR4512 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications.

• Active Area Diameter or Length: 0.0500 mm
• Dark Current: 500 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: Avalanche Photodiode

Description: analysis, UV emitter output monitoring, Outdoor UV sensors, Gas/flame detection, spectrometers and wearable devices. View Products Find something you were looking for? Get a free no-obligation quote today. Request Quote Related Resources Photo Detectors Avalanche Photo Diodes Silicon Photo

• Color: Ultraviolet
• Peak Wavelength: 440 nm

Description: The high resolution Xlin-1.7-3000 InGaAs detector is specifically designed for earth observation. The detector is based on mechanical butting of three InGaAs photodiode arrays with each 1024 pixels on a 25 µm pixel pitch, forming a nearly continuous line of 2900 pixels.

• Array Type: Linear Array
• Operating Temperature Range: -40 to 85 C
• Output Channels: 3
• Spectral Range: 0.9000 to 1.7 µm

Description: Knight Optical is pleased to offer our range of Raman mini spectrometers for quick identification of a variety of liquid, solid or powder samples. Our Raman spectrometers feature enhanced CCD detectors for 785nm Raman and TEC cooled InGaAs PDAs for 1064nm Raman. Our 1064nm

• Stray Light: 0.0500 %
• Wavelength Range: 785 nm

Description: to measure fields as small as 0.7 mm. Equipped with an extended InGaAs detector and double laser aiming marks, it ensures accuracy and seamless alignment.

• Device Category: Sensor / Transducer
• Response Time: 1 milliseconds
• Spectral Range: 2.3 microns
• Technology: Thermal Pyrometer / Detector

Description: MACOM’s line of products for test & measurement include both instrument-style and OEM module configurations. We offer a full suite of standard components and instrumentation and the ability to customize products for unique requirements. The instrument-style detectors and receivers

• Bandwidth: 8500 to 70000 MHz
• Photodiode Semiconductor: Silicon (400nm to 1100nm), InGaAs (900nm to 1700nm)
• Responsivity: 0.2000 to 1 A/W
• Sensitivity: -27 to -11 dB

Description: accessories, including the Automatic X-Y Stage for automated measurements, expands their applications. Three detectors, a photomultiplier tube (PMT) detector for the UV-Vis region and InGaAs and PbS detectors for the NIR region, ensure high sensitivity during

• Computer Interface: Yes
• Detector Sample Volume: Up to 15680 cc
• Detector Type: Other Detector
• Display Options: Video Display

Description: ISA041HRA is a new type InGaAs NIR detector using InGaAs high resolution solid state image sensor, having 400nm~1700nm wide spectral range. As the image sensing device pixel pitch 5µm square (SXGA: 1280×1024 pixels , VGA: 640×512 pixels) high resolution a type InGaAs

• Horizontal Resolution: 1024 lines
• Vertical Resolution: 1280 lines

Description: StellarNets' high performance InGaAs spectrometers cover the NIR wavelength range from 0.9-2.3 µm. The units are exceptionally robust with no moving parts and are packaged in small rugged metal enclosures (2.75" x 4" x 6") for portable, process, and lab applications. The InGaAs

• Display Type: Video
• Mounting / Environment: Portable, Lab / Benchtop, In-situ / Field
• Wavelength Range: 900 to 1700 nm

Description: Princeton Infrared Technologies will develop the detector needed for the SWIR application. Our knowledge of InGaAs detector arrays is unparalleled in the industry. We can work with your engineering team on the specifications you need for your SWIR application. We build arrays

• Location: North America, United States Only, Northeast US Only
• Logic Family: Gallium Arsenide (GaAs)
• Services: Design / Engineering, R & D / Development

Description: The 81531A is a used Optical Sensor from Agilent. Optical sensors are electronic detectors that convert light into and electrical signal. They are used with optical meters to allow engineers to design and troubleshoot optical systems. Additional Features: Designed for

Description: The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family of

• Photodiode Material: Indium Gallium Arsenide
• Photodiode Package / Mounting: Other
• Sensitivity: 0.9500 A/W
• Spectral Response Range: 1100 to 1620 nm

Description: What's special about this fiber optic test kit? Includes everything needed to inspect and test singlemode and multimode fiber optic connections KITS™ Software is included for data logging and network certification Optical power meter featuring InGaAs